CN111048499A - 微发光二极管显示面板及其制备方法 - Google Patents

微发光二极管显示面板及其制备方法 Download PDF

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Publication number
CN111048499A
CN111048499A CN201911293436.3A CN201911293436A CN111048499A CN 111048499 A CN111048499 A CN 111048499A CN 201911293436 A CN201911293436 A CN 201911293436A CN 111048499 A CN111048499 A CN 111048499A
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Prior art keywords
metal
metal electrode
substrate
display panel
layer
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CN201911293436.3A
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CN111048499B (zh
Inventor
林柏青
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
General Interface Solution Ltd
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
General Interface Solution Ltd
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Application filed by Interface Optoelectronics Shenzhen Co Ltd, Interface Technology Chengdu Co Ltd, General Interface Solution Ltd filed Critical Interface Optoelectronics Shenzhen Co Ltd
Priority to CN201911293436.3A priority Critical patent/CN111048499B/zh
Priority to TW108148475A priority patent/TWI724720B/zh
Priority to US16/837,145 priority patent/US11355484B2/en
Publication of CN111048499A publication Critical patent/CN111048499A/zh
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Abstract

本发明提供了一种微发光二极管显示面板及其制备方法，所述微发光二极管显示面板包括：衬底，所述衬底的表面上设置有多个第一金属电极；连接层，铺设于所述衬底的表面上并覆盖所述第一金属电极，所述连接层中包括多个导电粒子；多个微发光二极管，每一个微发光二极管的一端设置有第二金属电极，所述第二金属电极和第一金属电极通过部分的所述导电粒子电性连接；以及多个金属焊点，所述多个金属焊点设置在所述衬底的表面上，与所述第一金属电极间隔设置，每一个所述金属焊点连接部分的所述导电粒子形成一挡墙，且所述挡墙同时包围所述第一金属电极和第二金属电极。上述微发光二极管显示面板可有效避免断裂的现象。

Description

微发光二极管显示面板及其制备方法
技术领域
本发明属于微发光二极管领域，涉及一种微发光二极管显示面板和微发光二极管显示面板的制备方法。
背景技术
目前微发光二极管显示器被视为新一代的显示装置，其具有高亮度、低功耗、超高分辨率与色彩饱和度，因此市场前景备受看好。但在实际的制程过程中微发光二极管发光组件可能因为承受不住来自微发光二极管电极两侧的应力，而导致断裂。
发明内容
本发明第一方面提供了一种微发光二极管显示面板，包括：衬底，所述衬底的表面上设置有多个第一金属电极；连接层，铺设于所述衬底的表面上并覆盖所述第一金属电极，所述连接层中包括多个导电粒子；多个微发光二极管，每一个微发光二极管的一端设置有第二金属电极，所述第二金属电极和第一金属电极通过部分的所述导电粒子电性连接；以及多个金属焊点，所述多个金属焊点设置在所述衬底的表面上，与所述第一金属电极间隔设置，每一个所述金属焊点连接部分的所述导电粒子形成一挡墙，且所述挡墙同时包围所述第一金属电极和第二金属电极。
本发明第二方面提供了一种微发光二极管显示面板的制备方法，包括：提供一衬底，所述衬底的一表面上设置有多个第一金属电极和多个金属焊点，所述多个金属焊点与所述多个第一金属电极间隔设置；在所述衬底具有第一金属电极的表面形成一混合胶层，所述混合胶层中含有焊料材料,所述焊料材料包括导电粒子；在所述混合胶层远离所述衬底的一侧安装多个微发光二极管，每一个所述微发光二极管的一端设置有第二金属电极且第二金属电极对准至少一个第一金属电极；固化所述混合胶层形成为连接层，使所述第一金属电极和所述第二金属电极通过部分的导电粒子电性连接且每一个所述金属焊点连接其他的所述导电粒子。
上述微发光二极管显示面板通过导电粒子在金属焊点上聚集，进而在电极旁边形成金属挡墙，该金属挡墙对抵抗微发光二极管电极两侧的应力有极大的帮助，有效避免了微发光二极管显示面板的断裂现象。
附图说明
图1为本发明实施例微发光二极管显示面板的示意图。
图2为本发明实施例一微发光二极管显示面板的剖面图。
图3为本发明实施例二微发光二极管显示面板的剖面图。
图4为本发明实施例三微发光二极管显示面板的剖面图。
图5为本发明实施例一微发光二极管显示面板制备步骤的剖面图。
主要元件符号说明
微发光二极管显示面板 100、200、300
衬底 10
微发光二极管 20
第二金属电极 21
基底层 11
驱动层 12
第一金属电极 13
连接层 14
导电粒子 16
金属焊点 17
待填充区域 18
金属挡墙 19
像素 30
保护层 31
混合胶层 32
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
为了能够更清楚地理解本发明的上述目的、特征和优点，下面结合附图和具体实施例对本发明进行详细描述。需要说明的是，在下面的描述中阐述了很多具体细节以便于充分理解本发明，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。
实施例一
参阅图1，本实施例提供了一种微发光二极管显示面板100。所述微发光二极管显示面板100包括衬底10和设置在衬底10上的多个微发光二极管20。每一个所述微发光二极管20的一端设置有第二金属电极21。
参阅图2，所述衬底10上设置有多个第一金属电极13。本实施例中，每一个所述微发光二极管20的一端设置有两个第二金属电极21，对应的，每一个所述微发光二极管20均对应衬底10上的两个所述第一金属电极13。所述多个微发光二极管20相互间隔设置于所述衬底10上。
继续参阅图2，本实施例所述微发光二极管显示面板100还包括连接层14。所述衬底10包括基底层11和形成在所述基底层11上的驱动层12，所述驱动层12包括薄膜晶体管，且所述驱动层12设置在所述基底层11和所述连接层14之间。所述连接层14设置于所述衬底10和所述多个微发光二极管20之间，所述连接层14中含有焊料材料，所述焊料材料包括多个导电粒子16，所述第一金属电极13和所述第二金属电极21通过所述导电粒子16电性连接。所述连接层还包括有树脂，所述焊料材料混合在所述树脂中。本实施例中，所述树脂为环氧树脂，但不限于环氧树脂还可为其他的各种树脂，只要能起到粘结衬底10和微发光二极管20的作用即可。本实施例中，所述导电粒子16为各向异性导电胶，所述焊料材料还包括助焊剂，所述助焊剂用于辅助热传导及降低所述衬底10的表面张力，并去除导电粒子表面保护膜层，使其在特定温度下熔融移动产生自我聚集的效果，所述助焊剂为乙烯丙酸或戊二酸或乙醇酸。
进一步参阅图2，所述一种微发光二极管显示面板100还包括设置在所述衬底10具有第一金属电极13的表面上的多个金属焊点17。所述多个金属焊点17围绕每一个所述微发光二极管20设置。本实施例中，至少有两个所述金属焊点17围绕每一个所述微发光二极管20。所述第一金属电极13和所述第二金属电极21通过熔融移动固化后的导电粒子16进行电讯的传导。每一个所述金属焊点17连接所述连接层14内的导电粒子16。所述金属焊点17与所述第一金属电极13间隔设置，各个所述金属焊点17与所述连接层14中的所述导电粒子16形成为金属挡墙19，以起到增强微发光二极管显示面板100的强度的效果。该金属挡墙19的存在，有效减少了所述微发光二极管显示面板100承受来自所述第一金属电极13两侧的应力，本实施例结构简单，有效避免了所述微发光二极管显示面板100的断裂。
实施例二
如图3所示，本实施例提供了一种微发光二极管显示面板200，其与第一实施例中的微发光二极管显示面板200结构基本相同，也包括衬底10和设置在衬底10上的多个微发光二极管20、设置于所述衬底10和所述多个微发光二极管20之间的连接层14以及多个金属焊点17。所述衬底10上设置有多个第一金属电极13，所述金属焊点17设置在所述衬底10具有第一金属电极13的表面上。
本实施例中，三个相邻的微发光二极管20组成一个像素30，图3仅呈现两个所述像素30。本实施例中每个所述像素30中的每一个微发光二极管20的周围均设置有所述金属焊点17以及金属挡墙19。相邻两个所述微发光二极管20共用一个所述金属焊点17。
继续参阅图3，区别于微发光二极管显示面板100，本实施例的所述微发光二极管显示面板200还包括一保护层31。所述保护层31覆盖全部的所述微发光二极管20，且所述保护层31为透明的可隔绝水和氧气的材料。
上述所述微发光二极管显示面板100通过对每个所述像素30的周围进行强化，有效避免了所述微发光二极管显示面板100因所述第一金属电极13旁边产生应力而断裂的现象。
实施例3
如图4所示，本实施例提供了一种微发光二极管显示面板300，其与第二实施例中的微发光二极管显示面板200结构基本相同，也包括衬底10和设置在衬底10上的多个微发光二极管20、设置于所述衬底10和所述多个微发光二极管20之间的连接层14以及多个金属焊点17。所述衬底10上设置有多个第一金属电极13，所述金属焊点17设置在所述衬底10具有第一金属电极13的表面上。
三个相邻的微发光二极管20组成一个像素30，图4仅呈现两个所述像素30。本实施例中，每个所述像素30的周围均设置有所述金属焊点17以及金属挡墙19。本实施例所述微发光二极管显示面板100可以有效避免所述微发光二极管显示面板100因两侧应力而断裂的现象。
一并参阅图2和图5，本发明实施例一还提供了一种微发光二极管显示面板100的制备方法，包括：
步骤一：提供一衬底10，所述衬底10的一表面上设置有多个所述第一金属电极13和多个所述金属焊点17。所述多个金属焊点17与所述第一金属电极13间隔设置且与所述第一金属电极13电性绝缘。
步骤二：在所述衬底10具有所述第一金属电极13的表面形成一混合胶层32，如图5所示。所述混合胶层32中含有焊料材料和树脂，所述焊料材料包括导电粒子16和助焊剂，所述导电粒子16为锡-银合金或锡-铜合金或锡-铋合金，所述助焊剂用于辅助热传导及降低所述衬底10的表面张力，所述树脂为环氧树脂。
步骤三：安装所述微发光二极管20，在所述混合胶层远离所述衬底10的一侧安装多个所述微发光二极管20，每一个所述微发光二极管20的一端设置有第二金属电极21且所述第二金属电极21对准至少一个所述第一金属电极13。
步骤四：固化所述混合胶层形成为连接层14。本实施例中，是通过对所述微发光二极管显示面板100进行加热从而固化所述混合胶层，混合胶层的粘度下降，其中的所述导电粒子16与所述金属焊点17、所述第一金属电极13以及所述第二金属电极21产生共晶键结。一方面，所述第一金属电极13和所述第二金属电极21通过部分所述导电粒子16电性连接，直至所述第一金属电极13和所述第二金属电极21之间的所述待填充区域18堆满导电粒子16；另一方面，每个所述金属焊点17也与其他的所述导电粒子16连接，形成堆积，所述金属焊点17吸引所述导电粒子16，以形成一堵金属挡墙19，所述金属挡墙19围绕所述第一金属电极13和所述第二金属电极21。
如实施例二所述的微发光二极管显示面板200或实施例三所述的微发光二极管显示面板300，还需要的步骤是，在所述微发光二极管20上镀保护层31，所述保护层31可隔绝水分和氧气且所述保护层31为透明的。
上述微发光二极管显示面板100的制备方法通过在每个所述微发光二极管20两侧设置所述金属焊点17，同时利用所述导电粒子16于特定温度下熔融移动至金属电极产生金属共晶键合的特性，通过在封装制程中对所述微发光二极管显示面板100加热，使得所述导电粒子16在所述金属焊点17聚集，进而在所述微发光二极管20两侧形成所述金属挡墙19，该金属挡墙19极大的强化了所述微发光二极管20的两侧，对抵抗所述微发光二极管20来自两侧的应力有极大的帮助，有效避免了所述微发光二极管显示面板100的断裂现象。
上述微发光二极管显示面板100结构简单，却能有效避免所述微发光二极管显示面板100的断裂现象。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。最后应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或等同替换，而不脱离本发明技术案的范围。

Claims (10)

1.一种微发光二极管显示面板，其特征在于，包括：
衬底，所述衬底的表面上设置有多个第一金属电极；
连接层，铺设于所述衬底的表面上并覆盖所述第一金属电极，所述连接层中包括多个导电粒子；
多个微发光二极管，每一个微发光二极管的一端设置有第二金属电极，所述第二金属电极和第一金属电极通过部分的所述导电粒子电性连接；以及
多个金属焊点，所述多个金属焊点设置在所述衬底的表面上，与所述第一金属电极间隔设置，每一个所述金属焊点连接部分的所述导电粒子形成一挡墙，且所述挡墙同时包围所述第一金属电极和第二金属电极。
2.如权利要求1所述的微发光二极管显示面板，其特征在于，所述衬底包括基底层和形成在所述基底层上的驱动层，所述驱动层包括多个薄膜晶体管,所述驱动层设置在所述基底层和所述连接层之间。
3.如权利要求1所述的微发光二极管显示面板，其特征在于，所述多个金属焊点围绕每一个微发光二极管设置。
4.如权利要求1所述的微发光二极管显示面板，其特征在于，所述挡墙高度相当于所述连接层厚度。
5.如权利要求1所述的微发光二极管显示面板，其特征在于，所述连接层中还包括树脂和焊料材料，所述焊料材料混合在所述树脂中。
6.如权利要求5所述的微发光二极管显示面板，其特征在于，所述树脂为环氧树脂。
7.一种微发光二极管显示面板的制备方法，其特征在于，包括：
提供一衬底，所述衬底的一表面上设置有多个第一金属电极和多个金属焊点，所述多个金属焊点与所述多个第一金属电极间隔设置；
在所述衬底具有第一金属电极的表面形成一混合胶层，所述混合胶层中含有焊料材料,所述焊料材料包括导电粒子；
在所述混合胶层远离所述衬底的一侧安装多个微发光二极管，每一个所述微发光二极管的一端设置有第二金属电极且第二金属电极对准至少一个第一金属电极；
固化所述混合胶层形成为连接层，使所述第一金属电极和所述第二金属电极通过部分的导电粒子电性连接且每一个所述金属焊点连接其他的所述导电粒子。
8.如权利要求7所述的微发光二极管显示面板的制备方法，其特征在于，所述焊料材料中还包括助焊剂，所述助焊剂为乙烯丙酸或戊二酸或乙醇酸。
9.如权利要求7所述的微发光二极管显示面板的制备方法，其特征在于，所述混合胶层还含有树脂。
10.如权利要求9所述的微发光二极管显示面板的制备方法，其特征在于，所述树脂为环氧树脂。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112670311A (zh) * 2020-12-22 2021-04-16 业成科技（成都）有限公司 微发光二极体显示面板及其制作方法
CN113054073A (zh) * 2021-02-25 2021-06-29 京东方科技集团股份有限公司 驱动背板及其制作方法、转移方法、显示装置
CN114203749A (zh) * 2021-12-10 2022-03-18 深圳市华星光电半导体显示技术有限公司 双面显示面板和双面显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023229210A1 (ko) * 2022-05-27 2023-11-30 삼성전자주식회사 마이크로 발광 다이오드를 포함하는 디스플레이 모듈

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186493A (ja) * 1997-12-25 1999-07-09 Oki Electric Ind Co Ltd 半導体素子の接続構造及びその接続方法
KR20090029084A (ko) * 2007-09-17 2009-03-20 엘지전자 주식회사 이방성 전도 필름 및 그를 포함하는 표시 장치
CN101630646A (zh) * 2008-07-14 2010-01-20 松下电器产业株式会社 基板间的连接方法、倒装芯片安装体及基板间连接结构
CN106914710A (zh) * 2015-12-28 2017-07-04 松下知识产权经营株式会社 树脂助焊剂焊膏和安装结构体
CN107614650A (zh) * 2015-06-02 2018-01-19 迪睿合株式会社 粘合剂组合物
CN108574158A (zh) * 2017-03-14 2018-09-25 群创光电股份有限公司 显示装置及其制造方法
CN208384933U (zh) * 2018-07-10 2019-01-15 上海索晔国际贸易有限公司 一种微缩化led矩阵
CN109728022A (zh) * 2017-10-31 2019-05-07 英属开曼群岛商錼创科技股份有限公司 微型发光二极管显示面板及其制造方法
CN109983544A (zh) * 2017-03-23 2019-07-05 积水化学工业株式会社 导电性粒子、导电材料以及连接结构体
CN109980060A (zh) * 2017-12-27 2019-07-05 群创光电股份有限公司 显示设备
TWI671921B (zh) * 2018-09-14 2019-09-11 頎邦科技股份有限公司 晶片封裝構造及其晶片
CN110268804A (zh) * 2017-02-01 2019-09-20 Lg电子株式会社 使用半导体发光元件的显示装置及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232563B1 (en) * 1995-11-25 2001-05-15 Lg Electronics Inc. Bump electrode and method for fabricating the same
WO2001014484A1 (fr) * 1999-08-25 2001-03-01 Hitachi Chemical Company, Ltd. Agent adhesif, technique de raccordement pour bornes de fil et structure de fils
CN100495676C (zh) * 2005-03-29 2009-06-03 松下电器产业株式会社 倒装芯片封装方法及其衬底间连接方法
US9773750B2 (en) * 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US8835940B2 (en) * 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
JP2014065766A (ja) * 2012-09-24 2014-04-17 Dexerials Corp 異方性導電接着剤
JP5985414B2 (ja) * 2013-02-19 2016-09-06 デクセリアルズ株式会社 異方性導電接着剤、発光装置及び異方性導電接着剤の製造方法
KR102132940B1 (ko) * 2013-11-29 2020-07-10 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101706818B1 (ko) * 2014-04-30 2017-02-15 제일모직주식회사 이방 도전성 필름용 조성물, 이방 도전성 필름 및 반도체 장치
KR20160046977A (ko) * 2014-10-20 2016-05-02 삼성디스플레이 주식회사 이방성 도전입자
US10032827B2 (en) * 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
US10593657B2 (en) * 2016-11-01 2020-03-17 Innolux Corporation Display devices and methods for forming the same
TWI789406B (zh) * 2017-07-14 2023-01-11 日商昭和電工材料股份有限公司 導電性接著劑組成物及使用其的連接結構體、製造連接結構體的方法
TWI650854B (zh) * 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
JP7046351B2 (ja) * 2018-01-31 2022-04-04 三国電子有限会社 接続構造体の作製方法
KR20210027848A (ko) * 2019-09-03 2021-03-11 삼성전자주식회사 마이크로 엘이디 디스플레이 및 이의 제작 방법

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186493A (ja) * 1997-12-25 1999-07-09 Oki Electric Ind Co Ltd 半導体素子の接続構造及びその接続方法
KR20090029084A (ko) * 2007-09-17 2009-03-20 엘지전자 주식회사 이방성 전도 필름 및 그를 포함하는 표시 장치
CN101630646A (zh) * 2008-07-14 2010-01-20 松下电器产业株式会社 基板间的连接方法、倒装芯片安装体及基板间连接结构
CN107614650A (zh) * 2015-06-02 2018-01-19 迪睿合株式会社 粘合剂组合物
CN106914710A (zh) * 2015-12-28 2017-07-04 松下知识产权经营株式会社 树脂助焊剂焊膏和安装结构体
CN110268804A (zh) * 2017-02-01 2019-09-20 Lg电子株式会社 使用半导体发光元件的显示装置及其制造方法
CN108574158A (zh) * 2017-03-14 2018-09-25 群创光电股份有限公司 显示装置及其制造方法
CN109983544A (zh) * 2017-03-23 2019-07-05 积水化学工业株式会社 导电性粒子、导电材料以及连接结构体
CN109728022A (zh) * 2017-10-31 2019-05-07 英属开曼群岛商錼创科技股份有限公司 微型发光二极管显示面板及其制造方法
CN109980060A (zh) * 2017-12-27 2019-07-05 群创光电股份有限公司 显示设备
CN208384933U (zh) * 2018-07-10 2019-01-15 上海索晔国际贸易有限公司 一种微缩化led矩阵
TWI671921B (zh) * 2018-09-14 2019-09-11 頎邦科技股份有限公司 晶片封裝構造及其晶片

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112670311A (zh) * 2020-12-22 2021-04-16 业成科技（成都）有限公司 微发光二极体显示面板及其制作方法
TWI751862B (zh) * 2020-12-22 2022-01-01 大陸商業成科技（成都）有限公司 微發光二極體顯示面板及其製作方法
US11515459B2 (en) * 2020-12-22 2022-11-29 Interface Technology (Chengdu) Co., Ltd. Micro light-emitting diode display panel and method for producing the same
CN113054073A (zh) * 2021-02-25 2021-06-29 京东方科技集团股份有限公司 驱动背板及其制作方法、转移方法、显示装置
CN114203749A (zh) * 2021-12-10 2022-03-18 深圳市华星光电半导体显示技术有限公司 双面显示面板和双面显示装置

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