CN115172163A - 等离子体蚀刻方法 - Google Patents

等离子体蚀刻方法 Download PDF

Info

Publication number
CN115172163A
CN115172163A CN202211004556.9A CN202211004556A CN115172163A CN 115172163 A CN115172163 A CN 115172163A CN 202211004556 A CN202211004556 A CN 202211004556A CN 115172163 A CN115172163 A CN 115172163A
Authority
CN
China
Prior art keywords
gas
plasma
film
etching
chlorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211004556.9A
Other languages
English (en)
Chinese (zh)
Inventor
依田悠
神户乔史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115172163A publication Critical patent/CN115172163A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN202211004556.9A 2016-09-09 2017-09-06 等离子体蚀刻方法 Pending CN115172163A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016176259A JP6785101B2 (ja) 2016-09-09 2016-09-09 プラズマエッチング方法
JP2016-176259 2016-09-09
CN201710794831.4A CN107808824A (zh) 2016-09-09 2017-09-06 等离子体蚀刻方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201710794831.4A Division CN107808824A (zh) 2016-09-09 2017-09-06 等离子体蚀刻方法

Publications (1)

Publication Number Publication Date
CN115172163A true CN115172163A (zh) 2022-10-11

Family

ID=61576547

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710794831.4A Pending CN107808824A (zh) 2016-09-09 2017-09-06 等离子体蚀刻方法
CN202211004556.9A Pending CN115172163A (zh) 2016-09-09 2017-09-06 等离子体蚀刻方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710794831.4A Pending CN107808824A (zh) 2016-09-09 2017-09-06 等离子体蚀刻方法

Country Status (3)

Country Link
JP (1) JP6785101B2 (ko)
KR (1) KR102033826B1 (ko)
CN (2) CN107808824A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7199174B2 (ja) * 2018-07-26 2023-01-05 東京エレクトロン株式会社 エッチング方法
JP7479207B2 (ja) * 2020-06-09 2024-05-08 東京エレクトロン株式会社 エッチング方法及び基板処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144026A (ja) * 1984-12-17 1986-07-01 Toshiba Corp ドライエツチング方法
EP0648858A1 (en) * 1993-10-15 1995-04-19 Applied Materials, Inc. Methods of coating plasma etch chambers and apparatus for plasma etching workpieces
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
JP2000235968A (ja) 1999-02-15 2000-08-29 Sharp Corp ドライエッチング装置及びそれを用いたドライエッチング方法
KR20000066317A (ko) * 1999-04-15 2000-11-15 윤종용 고밀도 플라즈마 식각설비를 이용한 알루미늄막의 식각방법
US6374833B1 (en) * 1999-05-05 2002-04-23 Mosel Vitelic, Inc. Method of in situ reactive gas plasma treatment
JP3793020B2 (ja) * 2000-12-26 2006-07-05 松下電器産業株式会社 ドライエッチング方法
JP3905870B2 (ja) * 2003-08-01 2007-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP2006303263A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 半導体装置の製造方法
JP2007194284A (ja) * 2006-01-17 2007-08-02 Tokyo Electron Ltd プラズマ処理方法、プラズマ処理装置、及び記憶媒体
JP5041713B2 (ja) * 2006-03-13 2012-10-03 東京エレクトロン株式会社 エッチング方法およびエッチング装置、ならびにコンピュータ読取可能な記憶媒体
CN101153396B (zh) * 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
CN101285189B (zh) * 2007-04-12 2010-05-19 上海宏力半导体制造有限公司 减少金属刻蚀工艺反应腔室产生沉积物的方法
KR101207447B1 (ko) * 2009-06-08 2012-12-03 인제대학교 산학협력단 저진공 축전 결합형 플라즈마를 이용한 건식 식각 공정
JP5782293B2 (ja) * 2011-05-10 2015-09-24 東京エレクトロン株式会社 プラズマ生成用電極およびプラズマ処理装置
JP2015076487A (ja) * 2013-10-08 2015-04-20 株式会社ジャパンディスプレイ 液晶表示装置の製造方法
JP6326312B2 (ja) * 2014-07-14 2018-05-16 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
CN107808824A (zh) 2018-03-16
JP6785101B2 (ja) 2020-11-18
KR102033826B1 (ko) 2019-10-17
JP2018041890A (ja) 2018-03-15
KR20180028949A (ko) 2018-03-19

Similar Documents

Publication Publication Date Title
US9051655B2 (en) Boron ionization for aluminum oxide etch enhancement
KR101265827B1 (ko) 웨이퍼의 베벨 에지 및 이면상의 필름들을 제거하는 장치및 방법들
KR101870491B1 (ko) 플라즈마 처리 장치, 기판 처리 시스템, 박막 트랜지스터의 제조 방법 및 기억 매체
JP6349796B2 (ja) プラズマ処理装置、薄膜トランジスターの製造方法及び記憶媒体
CN107622945B (zh) 等离子体蚀刻方法、等离子体蚀刻装置和基板载置台
JP6760439B2 (ja) 薄膜トランジスターの製造方法及び記憶媒体
TWI789450B (zh) 電漿處理裝置
TWI403222B (zh) Plasma processing device
TW201721713A (zh) 被處理體之處理方法
TWI743155B (zh) 電漿蝕刻方法及電漿蝕刻系統
US20130025790A1 (en) Plasma processing apparatus and plasma processing method
CN115172163A (zh) 等离子体蚀刻方法
KR20180034407A (ko) 다층막을 에칭하는 방법
US20200203144A1 (en) Methods of cleaning an oxide layer in a film stack to eliminate arcing during downstream processing
CN111316421A (zh) 减少等离子体引起的损坏的工艺

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination