CN115039222B - 可自由配置的功率半导体模块 - Google Patents

可自由配置的功率半导体模块 Download PDF

Info

Publication number
CN115039222B
CN115039222B CN202180011873.0A CN202180011873A CN115039222B CN 115039222 B CN115039222 B CN 115039222B CN 202180011873 A CN202180011873 A CN 202180011873A CN 115039222 B CN115039222 B CN 115039222B
Authority
CN
China
Prior art keywords
semiconductor
power
terminal
board
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180011873.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN115039222A (zh
Inventor
J·舒德雷尔
S·基辛
F·莫恩
G·里德尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Publication of CN115039222A publication Critical patent/CN115039222A/zh
Application granted granted Critical
Publication of CN115039222B publication Critical patent/CN115039222B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0262—Arrangements for regulating voltages or for using plural voltages
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/04—Assemblies of printed circuits
    • H05K2201/042—Stacked spaced PCBs; Planar parts of folded flexible circuits having mounted components in between or spaced from each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10151—Sensor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10196—Variable component, e.g. variable resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/222—Completing of printed circuits by adding non-printed jumper connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
  • Combinations Of Printed Boards (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202180011873.0A 2020-01-30 2021-01-28 可自由配置的功率半导体模块 Active CN115039222B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20154510.0 2020-01-30
EP20154510 2020-01-30
PCT/EP2021/052004 WO2021152021A1 (en) 2020-01-30 2021-01-28 Free configurable power semiconductor module

Publications (2)

Publication Number Publication Date
CN115039222A CN115039222A (zh) 2022-09-09
CN115039222B true CN115039222B (zh) 2024-10-11

Family

ID=69423064

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180011873.0A Active CN115039222B (zh) 2020-01-30 2021-01-28 可自由配置的功率半导体模块

Country Status (5)

Country Link
US (1) US12599012B2 (enExample)
EP (1) EP4097761B1 (enExample)
JP (1) JP7684320B2 (enExample)
CN (1) CN115039222B (enExample)
WO (1) WO2021152021A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021208772B4 (de) 2021-08-11 2024-05-16 Zf Friedrichshafen Ag Halbbrücke für einen Inverter zum Betreiben eines Elektrofahrzeugantriebs, Leistungsmodul umfassend mehrere Halbbrücken, Inverter, Verfahren zum Herstellen eines Inverters
DE102021208767A1 (de) 2021-08-11 2023-02-16 Zf Friedrichshafen Ag Halbbrücke für einen Inverter zum Betreiben eines Elektrofahrzeugantriebs, Leistungsmodul umfassend mehrere Halbbrücken, Inverter, Verfahren zum Herstellen eines Inverters
DE102021208770A1 (de) 2021-08-11 2023-02-16 Zf Friedrichshafen Ag Halbbrücke für einen Inverter zum Betreiben eines Elektrofahrzeugantriebs, Leistungsmodul umfassend mehrere Halbbrücken, Inverter, Verfahren zum Herstellen eines Inverters
DE102022209564A1 (de) 2022-09-13 2023-07-06 Zf Friedrichshafen Ag Leistungsmodul und verfahren zum montieren eines leistungsmoduls
DE102022211926A1 (de) * 2022-11-10 2024-05-16 D + L Dubois + Linke Gesellschaft mit beschränkter Haftung Schweißgerät
DE102022213006A1 (de) * 2022-12-02 2024-06-13 Zf Friedrichshafen Ag Leistungsmodul für einen Wandler mit separater Leiterplatte zur Steuersignalführung
CN119181675A (zh) * 2023-06-21 2024-12-24 北京大学 半导体封装结构
US12556090B2 (en) * 2023-07-18 2026-02-17 Volkswagen Aktiengesellschaft Wide band gap (WBG) devices based three-level neutral point clamped (NPC) power module designs
US20250294697A1 (en) * 2024-03-18 2025-09-18 Mahle International Gmbh Electric power converter
DE102024127473A1 (de) * 2024-09-23 2026-03-26 Infineon Technologies Ag Halbleitervorrichtungen und Verfahren zu deren Herstellung
CN120769416B (zh) * 2025-09-03 2026-01-02 乐山希尔电子股份有限公司 一种层叠式功率模块及制备方法
CN121215647A (zh) * 2025-11-27 2025-12-26 华侨大学 一种三相低压mosfet封装集成功率模块

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102664177A (zh) * 2012-05-16 2012-09-12 中国科学院电工研究所 一种双面冷却的功率半导体模块
CN105612690A (zh) * 2014-04-14 2016-05-25 富士电机株式会社 半导体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243713A (ja) 2004-02-24 2005-09-08 Toshiba Corp パワーモジュール及び実装基板
US8124429B2 (en) * 2006-12-15 2012-02-28 Richard Norman Reprogrammable circuit board with alignment-insensitive support for multiple component contact types
DE102008033410B4 (de) * 2008-07-16 2011-06-30 SEMIKRON Elektronik GmbH & Co. KG, 90431 Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu
DE102009046258B3 (de) 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
JP5551920B2 (ja) 2009-11-24 2014-07-16 イビデン株式会社 半導体装置及びその製造方法
WO2014185050A1 (ja) 2013-05-16 2014-11-20 富士電機株式会社 半導体装置
EP2871765A1 (en) 2013-11-08 2015-05-13 Vincotech GmbH NPC converter for use in power module, and power module incorporating same
JP6701641B2 (ja) 2015-08-13 2020-05-27 富士電機株式会社 半導体モジュール
US9839146B2 (en) 2015-10-20 2017-12-05 Cree, Inc. High voltage power module
JP2018073923A (ja) 2016-10-27 2018-05-10 三菱電機株式会社 電力用半導体装置、電力用半導体装置の製造方法および電力変換装置
EP3555914B1 (en) 2016-12-16 2021-02-03 ABB Schweiz AG Power semiconductor module with low gate path inductance
CN106887955A (zh) * 2017-04-17 2017-06-23 中车青岛四方车辆研究所有限公司 高压大功率dc/dc模块
JP2019096508A (ja) 2017-11-24 2019-06-20 川崎重工業株式会社 筐体
WO2021151949A1 (en) 2020-01-30 2021-08-05 Abb Power Grids Switzerland Ag Power semiconductor module with accessible metal clips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102664177A (zh) * 2012-05-16 2012-09-12 中国科学院电工研究所 一种双面冷却的功率半导体模块
CN105612690A (zh) * 2014-04-14 2016-05-25 富士电机株式会社 半导体装置

Also Published As

Publication number Publication date
WO2021152021A1 (en) 2021-08-05
JP7684320B2 (ja) 2025-05-27
JP2023512274A (ja) 2023-03-24
US12599012B2 (en) 2026-04-07
US20230116118A1 (en) 2023-04-13
EP4097761B1 (en) 2024-06-26
CN115039222A (zh) 2022-09-09
EP4097761A1 (en) 2022-12-07

Similar Documents

Publication Publication Date Title
CN115039222B (zh) 可自由配置的功率半导体模块
JP7162013B2 (ja) Ｄｃ端子の同軸配列を有するハーフブリッジモジュール
US9147649B2 (en) Multi-chip module
US10636732B2 (en) Power module based on multi-layer circuit board
JP6925279B2 (ja) パワーエレクトロニクスモジュール
US6885096B2 (en) Semiconductor device having at least three power terminals superposed on each other
US9275930B2 (en) Circuit device and method of manufacturing the same
US10950516B2 (en) Resin encapsulated power semiconductor module with exposed terminal areas
US8890284B2 (en) Semiconductor device
CN108573880B (zh) 管芯嵌入
US9468087B1 (en) Power module with improved cooling and method for making
US8450837B2 (en) Circuit device having an improved heat dissipitation, and the method of manufacturing the same
US20140070329A1 (en) Wireless module with active and passive components
KR20120123254A (ko) 전력 공급 모듈 및 이의 패키징 및 집적 방법
CN104517952B (zh) 功率半导体模块和用于制造功率半导体模块的方法
US10777491B2 (en) Package comprising carrier with chip and component mounted via opening
US9129960B2 (en) Semiconductor device and manufacturing method thereof
US7466020B2 (en) Power module
CN112368830A (zh) 电力组件、功率模块、用于制造功率模块和电力组件的方法
US10170401B2 (en) Integrated power module
CN113140530A (zh) 包括连接到流体热沉的半导体封装的电子模块

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20240112

Address after: Zurich, SUI

Applicant after: Hitachi Energy Co.,Ltd.

Address before: Swiss Baden

Applicant before: Hitachi energy Switzerland AG

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant