JP5551920B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5551920B2 JP5551920B2 JP2009266869A JP2009266869A JP5551920B2 JP 5551920 B2 JP5551920 B2 JP 5551920B2 JP 2009266869 A JP2009266869 A JP 2009266869A JP 2009266869 A JP2009266869 A JP 2009266869A JP 5551920 B2 JP5551920 B2 JP 5551920B2
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- 239000004065 semiconductor Substances 0.000 title claims description 109
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- 239000004020 conductor Substances 0.000 claims description 329
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 50
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- 229910052782 aluminium Inorganic materials 0.000 claims description 9
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Die Bonding (AREA)
Description
以下、実施例1に係る半導体装置102(図8、図9参照)について説明する。本実施例においては、上記実施形態で示した要素と同一の要素には各々同一の符号を付し、各要素について、より詳細なパラメータを明示する。
以下、実施例2に係る半導体装置101(図1、図2参照)について説明する。本実施例においては、上記実施形態で示した要素と同一の要素には各々同一の符号を付し、各要素について、より詳細なパラメータを明示する。
さらに、実施例1における導体ポスト40の材料を変えた例(実施例3)、並びに実施例1における導体ポスト40の挿入量及び固着面積を変えた例(実施例4、5)についても、許容電流等を測定した。また、実施例2における導体ポスト40の端面寸法(嵌合寸法)を変化させた例(実施例6、比較例1)、導体ポスト40と孔30bとの接続に半田ボールを使用しなかった例(実施例7)についても、許容電流等を測定した。これらの結果を、上記実施例1、2の結果と共に、図27〜図30に示す。図中、試料#11〜#17は、実施例1〜7の半導体装置に相当し、試料#21は、比較例1の半導体装置に相当する。図27には、孔30bや導体33の形状等を示す。図28には、導体ポスト40の材料等を示す。図29には、固着部の固着面積(嵌合面積)等を示す。図30には、許容電流の測定結果を示す。
10a 半導体素子(FWDチップ)
11〜14 電極
11a、12a 電極
20 放熱板
21 電極
30 支持板
30a 絶縁基板
30b 孔
31、32 導体回路
33 導体
34 無電解ニッケル膜
35 無電解金めっき膜
40 導体ポスト
40a 柱状導体
40b コーティング膜
41 第1柱部
41a 第1端部
42 第2柱部
42a 第2端部
43 鍔部
50 接続基板
61〜65 外部接続端子
71a〜71c、72a〜72d、73a〜73d、74 導電性材料
74 導電性材料
101、102 半導体装置
300 出発基板
301、302 銅箔
303 化学銅めっき膜
304 電解銅めっき膜
401 銅板
1001 金型ポンチ
1002 金型ダイ
E エミッタポスト
F FWDポスト
G ゲートポスト
S センサポスト
Claims (11)
- 円柱の孔が形成されるとともに、該孔の壁面に導体が形成された支持板と、
電力用半導体素子と、
一端に第1端部を有し他端に第2端部を有する柱状導体からなる導体ポストと、
を備え、
前記第1端部の端面形状と前記孔の開口形状とが非相似の関係にあり、
前記導体ポストの側面と前記孔壁面の前記導体との固着面には、略同一面積の2以上の面が含まれ、これらの面は、略対称に配置され、
前記導体ポストの前記第2端部は、前記電力用半導体素子に接続され、
前記導体ポストの前記側面は、前記第2端部よりも前記第1端部側において、前記導体ポストの押圧により変形した前記孔壁面の前記導体に部分的に固着している、
ことを特徴とする半導体装置。 - 前記導体ポストと前記孔壁面の前記導体との接触面積は、前記導体ポストの軸方向に直交する横断面の面積の少なくとも50%以上である、
ことを特徴とする請求項1に記載の半導体装置。 - 前記支持板の少なくとも一方の主面に、導体層が形成され、
前記導体ポストの前記側面は、前記主面の前記導体層に接触している、
ことを特徴とする請求項1又は2に記載の半導体装置。 - 前記導体ポストの前記側面と前記導体層との接触面積は、前記導体ポストの軸方向に直交する横断面の面積の少なくとも15%以上である、
ことを特徴とする請求項3に記載の半導体装置。 - 前記第1端部の端面形状は、楕円、長方形、正多角形、正多角星、十字、コスモス形、又はこれらの2以上を結合した形状である、
ことを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置。 - 前記導体ポストの主成分は、銅、銀、金、又はアルミニウムである、
ことを特徴とする請求項1乃至5のいずれか一項に記載の半導体装置。 - 前記導体ポストは、
銅、銀、金、又はアルミニウムを主成分とする柱状導体と、
前記柱状導体の表面に形成された、クロム、ニッケル、パラジウム、チタン、又は白金からなるコーティング膜と、
を有する、
ことを特徴とする請求項1乃至6のいずれか一項に記載の半導体装置。 - 前記コーティング膜の厚さは、0.5μm〜10μmである、
ことを特徴とする請求項7に記載の半導体装置。 - 前記半導体装置は、少なくとも前記支持板側主面に導体層を有する放熱板をさらに備え、
前記電力用半導体素子の少なくとも1つの電極が、前記放熱板の前記導体層に固定される、
ことを特徴とする請求項1乃至8のいずれか一項に記載の半導体装置。 - 支持板に円柱の孔を形成することと、
前記孔の壁面に導体を形成することと、
端面形状が前記孔の開口形状と非相似の関係にある導体ポストの第1端部を前記孔に嵌入し、前記第1端部と前記孔壁面の前記導体とを部分的に固着することと、
前記導体ポストの、前記第1端部とは反対側の第2端部を、電力用半導体素子に接続することと、
を含み、
前記導体ポストの側面と前記孔壁面の前記導体との固着面には、略同一面積の2以上の面が含まれ、これらの面は、略対称に配置される、
ことを特徴とする半導体装置の製造方法。 - 前記嵌入前における前記第1端部の幅は、前記孔の対応する部分の幅に比して、前記孔壁面の前記導体の厚みの5%〜75%の寸法だけ大きい、
ことを特徴とする請求項10に記載の半導体装置の製造方法。
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JP2009266869A JP5551920B2 (ja) | 2009-11-24 | 2009-11-24 | 半導体装置及びその製造方法 |
US12/952,655 US8415791B2 (en) | 2009-11-24 | 2010-11-23 | Semiconductor device and fabrication method therefor |
EP10192380.3A EP2339625B1 (en) | 2009-11-24 | 2010-11-24 | Semiconductor device and fabrication method therefor |
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JP2009266869A JP5551920B2 (ja) | 2009-11-24 | 2009-11-24 | 半導体装置及びその製造方法 |
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JP2011114039A JP2011114039A (ja) | 2011-06-09 |
JP5551920B2 true JP5551920B2 (ja) | 2014-07-16 |
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US (1) | US8415791B2 (ja) |
EP (1) | EP2339625B1 (ja) |
JP (1) | JP5551920B2 (ja) |
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WO2012166028A1 (en) * | 2011-06-01 | 2012-12-06 | Telefonaktiebolaget L M Ericsson (Publ) | Thermo/electrical conductor arrangement for multilayer printed circuit boards |
DE102011080929B4 (de) * | 2011-08-12 | 2014-07-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Leistungshalbleitermoduls |
JP5870669B2 (ja) * | 2011-12-14 | 2016-03-01 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
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