CN114982078B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN114982078B
CN114982078B CN202080092513.3A CN202080092513A CN114982078B CN 114982078 B CN114982078 B CN 114982078B CN 202080092513 A CN202080092513 A CN 202080092513A CN 114982078 B CN114982078 B CN 114982078B
Authority
CN
China
Prior art keywords
bypass capacitor
electrode
emitting element
semiconductor device
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080092513.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN114982078A (zh
Inventor
山本兴辉
秋吉伸一
谷奥雅俊
高田晴久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN114982078A publication Critical patent/CN114982078A/zh
Application granted granted Critical
Publication of CN114982078B publication Critical patent/CN114982078B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/879—Bump connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/725—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a laterally-adjacent insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/759—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Moving Of The Head To Find And Align With The Track (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Led Devices (AREA)
CN202080092513.3A 2020-01-13 2020-12-28 半导体装置 Active CN114982078B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062960581P 2020-01-13 2020-01-13
US62/960,581 2020-01-13
PCT/JP2020/049117 WO2021145217A1 (ja) 2020-01-13 2020-12-28 半導体装置

Publications (2)

Publication Number Publication Date
CN114982078A CN114982078A (zh) 2022-08-30
CN114982078B true CN114982078B (zh) 2023-04-28

Family

ID=76863982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080092513.3A Active CN114982078B (zh) 2020-01-13 2020-12-28 半导体装置

Country Status (6)

Country Link
US (1) US20220337029A1 (https=)
EP (1) EP4071945B1 (https=)
JP (1) JP7082721B2 (https=)
CN (1) CN114982078B (https=)
TW (1) TWI784382B (https=)
WO (1) WO2021145217A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114981680B (zh) * 2020-01-07 2025-05-16 艾尔默斯半导体欧洲股份公司 光模块和具有至少一个这种光模块的LiDAR设备
JP7292241B2 (ja) * 2020-06-23 2023-06-16 株式会社東芝 半導体装置およびその製造方法
TWI800381B (zh) * 2022-05-19 2023-04-21 璦司柏電子股份有限公司 內建閘極驅動晶片的覆晶封裝功率電晶體模組
DE102023112751A1 (de) * 2023-05-15 2024-11-21 Ams-Osram International Gmbh Integriertes bauelementpackage mit einem auf einem halbleiterchip angeordneten laserpackage
CN118368510B (zh) * 2024-06-14 2024-10-18 宁波舜宇光电信息有限公司 一种深度信息摄像模组及3d传感装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068861A (ja) * 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 半導体スイッチ装置
JP2007235120A (ja) * 2006-02-03 2007-09-13 Denso Corp 半導体装置
CN101794779A (zh) * 2009-01-29 2010-08-04 三洋电机株式会社 绝缘栅型半导体装置
JP2013089752A (ja) * 2011-10-18 2013-05-13 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
CN104157685A (zh) * 2010-07-27 2014-11-19 株式会社电装 具有开关元件和续流二极管的半导体装置及其控制方法
CN108269900A (zh) * 2016-12-28 2018-07-10 日亚化学工业株式会社 发光装置及其制造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005262A (en) * 1997-08-20 1999-12-21 Lucent Technologies Inc. Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector
US6246708B1 (en) * 1997-08-27 2001-06-12 Xerox Corporation Semiconductor laser with associated electronic components integrally formed therewith
US6392290B1 (en) * 2000-04-07 2002-05-21 Siliconix Incorporated Vertical structure for semiconductor wafer-level chip scale packages
DE10041079A1 (de) * 2000-08-22 2002-03-14 Osram Opto Semiconductors Gmbh Lasermodul mit Ansteuerschaltung
JP2002232062A (ja) * 2001-02-02 2002-08-16 Ricoh Co Ltd 光電子集積素子
KR20070061994A (ko) 2005-12-12 2007-06-15 삼성전자주식회사 표시 장치 및 그 제조 방법
JP4856465B2 (ja) * 2006-04-19 2012-01-18 日本オプネクスト株式会社 光半導体素子搭載基板、および光送信モジュール
US8294208B2 (en) * 2008-03-04 2012-10-23 International Rectifier Corporation Semiconductor device having a gate contact on one surface electrically connected to a gate bus on an opposing surface
US7910992B2 (en) * 2008-07-15 2011-03-22 Maxim Integrated Products, Inc. Vertical MOSFET with through-body via for gate
US9587817B2 (en) * 2014-09-28 2017-03-07 Jiaxing Super Lighting Electric Appliance Co., Ltd LED tube lamp
JP5584146B2 (ja) 2011-01-20 2014-09-03 株式会社東芝 半導体装置およびその製造方法
JP5566354B2 (ja) * 2011-09-06 2014-08-06 三菱電機株式会社 電力用半導体スイッチおよび電力変換装置
JP6287105B2 (ja) * 2013-11-22 2018-03-07 ソニー株式会社 光通信デバイス、受信装置、送信装置及び送受信システム
US10574026B2 (en) * 2017-03-23 2020-02-25 Infineon Technologies Ag Circuit and method for driving a laser diode
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
DE102017108050B4 (de) * 2017-04-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstrahlungsquelle
DE102017112101A1 (de) 2017-06-01 2018-12-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul
US20190067901A1 (en) * 2017-08-30 2019-02-28 Lumentum Operations Llc Integrated package for laser driver and laser diode
US10681814B2 (en) * 2017-09-08 2020-06-09 Kemet Electronics Corporation High density multi-component packages
JP6967929B2 (ja) * 2017-09-28 2021-11-17 シャープ株式会社 光センサ及び電子機器
JP6828697B2 (ja) 2018-02-06 2021-02-10 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体装置およびｉｉｉ族窒化物半導体基板の製造方法
EP3783759B1 (en) * 2018-04-19 2024-05-01 Sony Semiconductor Solutions Corporation Semiconductor laser drive device and method for manufacturing same
WO2020118279A1 (en) 2018-12-06 2020-06-11 Finisar Corporation Optoelectronic assembly
US11166363B2 (en) * 2019-01-11 2021-11-02 Tactotek Oy Electrical node, method for manufacturing electrical node and multilayer structure comprising electrical node
JP2020145274A (ja) * 2019-03-05 2020-09-10 富士ゼロックス株式会社 発光装置、光学装置および情報処理装置
JP7318305B2 (ja) * 2019-05-17 2023-08-01 富士フイルムビジネスイノベーション株式会社 発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068861A (ja) * 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 半導体スイッチ装置
JP2007235120A (ja) * 2006-02-03 2007-09-13 Denso Corp 半導体装置
CN101794779A (zh) * 2009-01-29 2010-08-04 三洋电机株式会社 绝缘栅型半导体装置
CN104157685A (zh) * 2010-07-27 2014-11-19 株式会社电装 具有开关元件和续流二极管的半导体装置及其控制方法
JP2013089752A (ja) * 2011-10-18 2013-05-13 Nippon Hoso Kyokai <Nhk> 積層型半導体装置及びその製造方法
CN108269900A (zh) * 2016-12-28 2018-07-10 日亚化学工业株式会社 发光装置及其制造方法

Also Published As

Publication number Publication date
TW202141781A (zh) 2021-11-01
JP7082721B2 (ja) 2022-06-08
EP4071945A1 (en) 2022-10-12
EP4071945A4 (en) 2023-09-06
JPWO2021145217A1 (https=) 2021-07-22
WO2021145217A1 (ja) 2021-07-22
EP4071945B1 (en) 2025-03-26
US20220337029A1 (en) 2022-10-20
CN114982078A (zh) 2022-08-30
TWI784382B (zh) 2022-11-21

Similar Documents

Publication Publication Date Title
CN114982078B (zh) 半导体装置
US11037847B2 (en) Method of manufacturing semiconductor module and semiconductor module
CN102067309B (zh) 电力用半导体模块
JP5755533B2 (ja) 半導体装置
CN114175234B (zh) 半导体装置及电子装置
CN104425472B (zh) 电子器件
US12080990B2 (en) Semiconductor laser device
US20100259201A1 (en) Semiconductor device
US20220285911A1 (en) Semiconductor laser device
US11183485B2 (en) Semiconductor module
JP2009231805A (ja) 半導体装置
JP2017034053A (ja) 半導体装置
US20240313501A1 (en) Semiconductor light emitting device and semiconductor light emitting unit
US20220254764A1 (en) Semiconductor device
CN113228265A (zh) 半导体组件的电路构造
US20170279446A1 (en) Semiconductor device
CN114203682A (zh) 半导体装置
JP2024008998A (ja) 電子回路、半導体モジュール及び半導体装置
JP2022060630A (ja) 半導体レーザ素子、半導体レーザユニット、半導体レーザ装置
TW202439342A (zh) 半導體裝置
US20220130792A1 (en) Semiconductor device
JP7780392B2 (ja) 半導体装置
US20250329628A1 (en) Semiconductor device
US20240404941A1 (en) Semiconductor device and package structure of semiconductor device
US20240038750A1 (en) Semiconductor module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant