CN114981962A - 一种半导体结构及其制造方法 - Google Patents

一种半导体结构及其制造方法 Download PDF

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CN114981962A
CN114981962A CN202080093552.5A CN202080093552A CN114981962A CN 114981962 A CN114981962 A CN 114981962A CN 202080093552 A CN202080093552 A CN 202080093552A CN 114981962 A CN114981962 A CN 114981962A
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land
wafer
connecting disc
opening
sidewall
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赫然
何志宏
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Abstract

一种半导体器件及其制造方法，半导体器件可以包括第一晶圆(300)、第二晶圆(400)和接触塞(360)，第一晶圆(300)中可以包括第一介质层(320)，第一介质层(320)中具有第一连接盘(330)，第二晶圆(400)和第一晶圆(300)键合，第二晶圆(400)包括第二介质层(420)，第二介质层(420)中具有第二连接盘(430)，接触塞(360)为填充于垂直通孔中的导电材料，用于电连接第一连接盘(330)和第二连接盘(430)，其中垂直通孔为通过刻蚀形成的贯穿第一晶圆(300)且部分贯穿第二晶圆(400)至第二连接盘(430)的上表面和/或侧壁的通孔，第一连接盘(330)位于垂直通孔中且位于第一连接盘(330)之下的第一介质层(320)未被刻蚀，接触塞(360)可以从第一连接盘(330)的周围与第二连接盘(430)接触，从而利用简单的工艺实现接触塞(360)与第二连接盘(430)的可靠连接。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN202080093552.5A 2020-04-17 2020-04-17 一种半导体结构及其制造方法 Pending CN114981962A (zh)

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PCT/CN2020/085375 WO2021208078A1 (zh) 2020-04-17 2020-04-17 一种半导体结构及其制造方法

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US (1) US20230031151A1 (zh)
EP (1) EP4131374A4 (zh)
JP (1) JP2023521483A (zh)
KR (1) KR20230002752A (zh)
CN (1) CN114981962A (zh)
WO (1) WO2021208078A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130264688A1 (en) * 2012-04-06 2013-10-10 Omnivision Technologies, Inc. Method and apparatus providing integrated circuit system with interconnected stacked device wafers
KR20150022987A (ko) * 2012-06-07 2015-03-04 렌슬러 폴리테크닉 인스티튜트 3-차원 집적에서 tsv(through silicon vias) 스트레스를 감소시키기 위한 컨포멀한 코팅 탄성 쿠션의 이용
CN104051423B (zh) * 2013-03-13 2018-02-16 台湾积体电路制造股份有限公司 互连装置和方法
CN104377164A (zh) * 2014-09-28 2015-02-25 武汉新芯集成电路制造有限公司 一种晶圆跨硅穿孔互连工艺
EP3293757B1 (en) * 2016-09-07 2019-04-17 IMEC vzw A method for bonding and interconnecting integrated circuit devices
US9748175B1 (en) * 2016-11-18 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure in semiconductor structure and method for forming the same
KR102538174B1 (ko) * 2017-12-26 2023-05-31 삼성전자주식회사 비아 플러그를 갖는 반도체 소자
CN109148360B (zh) * 2018-08-28 2019-12-03 武汉新芯集成电路制造有限公司 半导体器件制作方法
CN109192747A (zh) * 2018-10-31 2019-01-11 德淮半导体有限公司 图像传感器的形成方法
CN109449091B (zh) * 2018-11-05 2020-04-10 武汉新芯集成电路制造有限公司 半导体器件的制作方法

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KR20230002752A (ko) 2023-01-05
US20230031151A1 (en) 2023-02-02
EP4131374A4 (en) 2023-05-31
JP2023521483A (ja) 2023-05-24
EP4131374A1 (en) 2023-02-08
WO2021208078A1 (zh) 2021-10-21

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