CN114873992A - 一种高铟含量的ito靶材的制备方法 - Google Patents
一种高铟含量的ito靶材的制备方法 Download PDFInfo
- Publication number
- CN114873992A CN114873992A CN202210503537.4A CN202210503537A CN114873992A CN 114873992 A CN114873992 A CN 114873992A CN 202210503537 A CN202210503537 A CN 202210503537A CN 114873992 A CN114873992 A CN 114873992A
- Authority
- CN
- China
- Prior art keywords
- ito target
- ito
- oxide powder
- target material
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 54
- 239000013077 target material Substances 0.000 claims abstract description 41
- 238000005245 sintering Methods 0.000 claims abstract description 34
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 24
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000015895 biscuits Nutrition 0.000 claims abstract description 22
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000002156 mixing Methods 0.000 claims abstract description 14
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 12
- 238000005452 bending Methods 0.000 claims abstract description 10
- 238000009694 cold isostatic pressing Methods 0.000 claims abstract description 9
- 238000000498 ball milling Methods 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 8
- 238000005238 degreasing Methods 0.000 claims abstract description 7
- 238000005469 granulation Methods 0.000 claims abstract description 7
- 230000003179 granulation Effects 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 238000000227 grinding Methods 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 12
- 239000004576 sand Substances 0.000 claims description 11
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 239000011324 bead Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 239000002994 raw material Substances 0.000 abstract description 9
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6565—Cooling rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
本发明公开了一种高铟含量的ITO靶材的制备方法,所述的ITO靶材中氧化铟粉末、氧化锡粉末质量比大于等于97:3,所述氧化铟粉体的比表面积为11‑12m2/g,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,使用冷等静压制成素坯,加工好的素坯放入烧结炉中进行脱脂和常压烧结,得到的ITO靶材相对密度大于99%,晶粒尺寸5.32‑6.84μm;抗弯强度为149‑156MPa。解决了铟锡比较高时,ITO靶材致密度难以提高,适应了太阳能电池行业高铟锡比的ITO靶材的需要。使用高比表面积的氧化铟粉体为原料制备的ITO靶材可以同时确保大尺寸,高密度,高密度均匀性且无开裂现象,同时降低烧结温度,靶材的致密度仍然可以保证,可以节约成本。
Description
技术领域
本发明涉及ITO靶材制备技术领域,具体是一种高铟含量的ITO靶材的制备方法。
背景技术
氧化铟锡靶材(ITO)靶材薄膜由于具有高透过率、低阻抗、高耐候性等优良特点,因此被广泛应用于太阳能、液晶显示、触摸屏、半导体显示器件等领域。而ITO靶材是磁控溅射制备ITO薄膜材料的主要原材料。
太阳能电池行业需要的ITO靶材薄膜需要具备电阻率较低、载流子迁移率高、透光率较高,膜层均匀性好等特征。目前常规做法是使用ln2O3:SnO2=97:3的ITO靶材,以实现对ITO薄膜方电阻的降低、载流子迁移率的提高等性能优化,但随着ITO靶材中的氧化锡含量不断减少,将靶材烧结致密的难度越来越高,这是因为氧化锡熔点低于氧化铟。
可以通过在ITO靶材制备中使用高比表面积的氧化铟粉体作为原料,可以有效解决靶材烧结致密度不高的问题,提高产品的成品率;高比表面积粉体制备的靶材晶粒尺寸更小,机械强度更高;同时可以在更低的烧结温度下实现致密化,节约成本。
CN105669186B高相对密度低电阻率氧化铟锡靶材的制备方法是一种以常压烧结法制备ITO靶材的方法。该发明是利用化学共沉淀法制备氧化铟锡复合粉体,In2O3:SnO2=90:10,在氧化铟锡粉体中加入复合烧结助Nb2O5-Bi2O3球磨混合后,加入粘结剂进行造粒并干燥,对造粒过后的氧化铟锡粉体模压成型得到初坯,再对初坯冷等静压得到素坯,最后素坯在高温氧氛围下烧结得到氧化铟锡靶材。烧结出的氧化铟锡靶材成分均匀且相对密度高、电阻率低。但未涉及高氧化铟含量时的烧结密度提高的技术内容。
发明内容
本发明提供一种高铟含量的ITO靶材的制备方法,通过在ITO靶材制备中使用高比表面积的氧化铟粉体作为原料,可以有效解决靶材烧结致密度不高的问题,提高产品的成品率;高比表面积粉体制备的靶材晶粒尺寸更小,机械强度更高;同时可以在更低的烧结温度下实现致密化,节约成本。
本发明的技术方案如下:一种高铟含量的ITO靶材的制备方法,所述的ITO靶材中氧化铟粉末、氧化锡粉末质量比大于等于97:3,所述氧化铟粉体的比表面积为11-12m2/g,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,使用冷等静压制成素坯,加工好的素坯放入烧结炉中进行脱脂和常压烧结,得到的ITO靶材相对密度大于99%,晶粒尺寸5.32-6.84μm;抗弯强度为149-156MPa。
所述烧结的最高温度为1600-1650℃。
所述氧化铟粉末、氧化锡粉末依次采用粗磨、精磨和纳米级砂磨进行处理。
所述粗磨工艺为,粗磨锆珠直径1-10mm,研磨时间3-20小时,搅拌机速度50-120rpm。
所述精磨使用砂磨机,自循环精磨,精磨锆珠直径0.8-1.0mm,主机转速800-1200rpm,供料泵流量800-1000L/min。
所纳米级砂磨的砂磨机锆珠直径0.05-0.1mm,主机转速1600rpm,供料泵流量500-600L/min。
所述烧结工艺如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1650℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。
有益效果:
(1)本发明通过使用高比表面积的氧化铟粉体为原料,解决了高铟锡比ITO靶材致密度不高的问题。
(2)本发明通过使用高比表面积的氧化铟粉体为原料,降低了靶材晶粒尺寸,提高了靶材抗弯强度。
(3)本发明解决了铟锡比较高时,ITO靶材致密度难以提高,适应了太阳能电池行业高铟锡比的ITO靶材的需要。使用高比表面积的氧化铟粉体为原料制备的ITO靶材可以同时确保大尺寸,高密度,高密度均匀性且无开裂现象,同时降低烧结温度,靶材的致密度仍然可以保证,可以节约成本。
具体实施方式
下面对本发明的技术方案做进一步的阐述。
工艺流程框架图如下所述:
粉末真空上料--粉末粗磨--粉末精磨--粉末纳米级砂磨--浆料配胶--喷雾造粒--混合过筛
具体步骤:
在预混合罐中加入定量的水,将氧化铟粉末、氧化锡粉末按照97:3的比例配好后倒入真空上料机中,同时开始真空上料机进行自动上料。
粗磨:上料完成后,开启预混罐搅拌桨,进行粗磨,粗磨锆珠直径1-10mm,研磨时间3-20小时,搅拌机速度50-120rpm。在粗磨过程中控制浆料的固含量,浆料粘度等主要参数。
精磨:粗磨完成后,将浆料打到砂磨第一个储料罐,开启精磨砂磨机主机,进行自循环精磨,精磨锆珠直径0.8-1.0mm,主机转速800-1200rpm,供料泵流量800-1000L/min。
纳米级砂磨:精磨完成后,将ITO浆料使用隔膜泵打到第二个储料罐中,开启2#纳米级砂磨机,砂磨机锆珠直径0.05-0.1mm,主机转速1600rpm,供料泵流量500-600L/min,同时加入一定量的分散剂防止浆料团聚。
砂磨完成后进行过筛,过筛目数200-400目。
将过筛后的浆料转到配胶罐中,加入一定量的粘结剂和消泡剂,搅拌2-4H,搅拌速度400-600rpm/min。
搅拌完成后,对ITO浆料进行造粒,根据工艺设计一定的工艺参数。
最后将造好粒的ITO粉末进行混合,分级过筛,最终的到一定一次粒径、和二次粒径的ITO粉末。
将粉体进行成型处理,通过将粉体装入模具中进行干压、冷等静压成型。
将成型好的素坯进行车削加工至规定形状。
将加工好的素坯放入烧结炉进行脱脂、常压烧结。
将烧结好的靶材进行切割、磨边、磨内外圆等机加工。
将加工后的靶材进行绑定、质量检测,将合格的产品进行磁控溅射镀膜,测试表征薄膜的载流子迁移率。
实施例1
本实施例提供了一种低比表面积(BET=6-7m2/g)的氧化铟粉体为原料的ITO靶材制备工艺,所述制备工艺步骤如下:
步骤一:将低比表面积的氧化铟和氧化锡粉体按97:3的质量比进行混合,经过混合、球磨、喷雾造粒得到纳米级ITO粉体。
步骤二:将步骤一制备的粉体装入模具,在300MPa压力下进行冷等静压成型,保压30min,得到ITO素坯。
步骤三:将步骤二的素坯进行车削加工,加工至设定尺寸与性状。
步骤四:将步骤三加工好的素坯放入烧结炉中进行脱脂和常压烧结。烧结制度如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1650℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。制备的97:3的ITO靶材形状无变化,相对密度达到97.9%。
步骤五:将步骤四的ITO靶材绑定在钛管外表面并进行超声波探伤检测。
步骤六:将步骤五的靶材进行性能测试,测试结果如下:(1)密度为7.02g/cm3,相对密度97.9%;(2)平均晶粒尺寸14.23μm;(3)抗弯强度为132MPa。
实施例2
本实施例提供了一种高比表面积(BET=11-12m2/g)的氧化铟粉体为原料的ITO靶材的制备工艺,所述制备工艺步骤如下:
步骤一:将高比表面积的氧化铟和氧化锡粉体按97:3的质量比进行混合,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,。
步骤二:将步骤一制备的粉体装入模具,在300MPa压力下进行冷等静压成型,保压30min,得到ITO素坯。
步骤三:将步骤二的素坯进行车削加工,加工至设定尺寸与性状。
步骤四:将步骤三加工好的素坯放入烧结炉中进行脱脂和常压烧结。烧结制度如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1650℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。制备的97:3的ITO靶材形状无变化,相对密度达到99.3%。
步骤五:将步骤四的ITO靶材绑定在钛管外表面并进行超声波探伤检测。
步骤六:将步骤五的靶材进行性能测试,测试结果如下:(1)密度为7.12g/cm3,相对密度99.3%;(2)平均晶粒尺寸6.84μm;(3)抗弯强度为149MPa。
实施例3
步骤一:将高比表面积(BET=11-12m2/g)的氧化铟和氧化锡粉体按97:3的质量比进行混合,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,。
步骤二:将步骤一制备的粉体装入模具,在300MPa压力下进行冷等静压成型,保压30min,得到ITO素坯。
步骤三:将步骤二的素坯进行车削加工,加工至设定尺寸与性状。
步骤四:将步骤三加工好的素坯放入烧结炉中进行脱脂和常压烧结。烧结制度如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1600℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。制备的97:3的ITO靶材形状无变化,相对密度达到99.0%。
步骤五:将步骤四的ITO靶材绑定在钛管外表面并进行超声波探伤检测。
步骤六:将步骤五的靶材进行性能测试,测试结果如下:(1)密度为7.10g/cm3,相对密度99.0%;(2)平均晶粒尺寸5.32μm;(3)抗弯强度为156MPa。
从以上结果可以发现,氧化铟比表面积越大,靶材的密度越大;抗弯强度越大;晶粒尺寸越小。在降低烧结最高温度后,高比表面积粉体制备的靶材相对密度仍达到99%,抗弯强度大于低比表面积粉体制备的靶材。
实施例4
步骤一:将高比表面积(BET=11-12m2/g)的氧化铟和氧化锡粉体按98:2的质量比进行混合,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,。
步骤二:将步骤一制备的粉体装入模具,在300MPa压力下进行冷等静压成型,保压30min,得到ITO素坯。
步骤三:将步骤二的素坯进行车削加工,加工至设定尺寸与性状。
步骤四:将步骤三加工好的素坯放入烧结炉中进行脱脂和常压烧结。烧结制度如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1600℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。制备的97:3的ITO靶材形状无变化,相对密度达到99.0%。
步骤五:将步骤四的ITO靶材绑定在钛管外表面并进行超声波探伤检测。
步骤六:将步骤五的靶材进行性能测试,测试结果如下:(1)密度为7.00g/cm3,相对密度99.1%;(2)平均晶粒尺寸5.41μm;(3)抗弯强度为150MPa。
上述实施例用于对本发明的技术方案做解释,发明的保护范围以权利要求书的记载为准。
Claims (7)
1.一种高铟含量的ITO靶材的制备方法,其特征在于,所述的ITO靶材中氧化铟粉末、氧化锡粉末质量比大于等于97:3,所述氧化铟粉体的比表面积为11-12m2/g,经过混合、球磨、喷雾造粒得到纳米级ITO粉体,使用冷等静压制成素坯,加工好的素坯放入烧结炉中进行脱脂和常压烧结,得到的ITO靶材相对密度大于99%,晶粒尺寸5.32-6.84μm;抗弯强度为149-156MPa。
2.根据权利要求所述高铟含量的ITO靶材的制备方法,其特征在于,所述烧结的最高温度为1600-1650℃。
3.根据权利要求1所述高铟含量的ITO靶材的制备方法,其特征在于,所述氧化铟粉末、氧化锡粉末依次采用粗磨、精磨和纳米级砂磨进行处理。
4.根据权利要求3所述高铟含量的ITO靶材的制备方法,其特征在于,所述粗磨工艺为,粗磨锆珠直径1-10mm,研磨时间3-20小时,搅拌机速度50-120rpm。
5.根据权利要求3所述高铟含量的ITO靶材的制备方法,其特征在于,所述精磨使用砂磨机,自循环精磨,精磨锆珠直径0.8-1.0mm,主机转速800-1200rpm,供料泵流量800-1000L/min。
6.根据权利要求3所述高铟含量的ITO靶材的制备方法,其特征在于,所纳米级砂磨的砂磨机锆珠直径0.05-0.1mm,主机转速1600rpm,供料泵流量500-600L/min。
7.根据权利要求1所述高铟含量的ITO靶材的制备方法,其特征在于,所述烧结工艺如下:(1)以5℃/min的升温速率升温至600℃,保温2h,通入氧气流量为8L/min;(2)以1.5℃/min的升温速率升温至1250℃,保温8h,通入氧气流量为12L/min;(3)以0.3℃/min的升温速率升温至1650℃,保温15h,通入氧气流量为16L/min;(4)以5℃/min的降温速率降升温至1250℃,通入氧气流量为16L/min;(5)随后停止通氧,自然冷却至室温。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210503537.4A CN114873992A (zh) | 2022-05-10 | 2022-05-10 | 一种高铟含量的ito靶材的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210503537.4A CN114873992A (zh) | 2022-05-10 | 2022-05-10 | 一种高铟含量的ito靶材的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114873992A true CN114873992A (zh) | 2022-08-09 |
Family
ID=82675547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210503537.4A Pending CN114873992A (zh) | 2022-05-10 | 2022-05-10 | 一种高铟含量的ito靶材的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN114873992A (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115745574A (zh) * | 2022-11-18 | 2023-03-07 | 郑州大学 | 高致密无开裂细晶铟锡氧化物管状靶材的制备方法 |
CN115745573A (zh) * | 2022-10-31 | 2023-03-07 | 芜湖映日科技股份有限公司 | 一种细晶izo靶材制备方法 |
CN115893989A (zh) * | 2022-12-29 | 2023-04-04 | 芜湖映日科技股份有限公司 | 一种细化ito靶材微观晶粒结构增强机械强度的工艺方法 |
CN116332637A (zh) * | 2023-02-14 | 2023-06-27 | 芜湖映日科技股份有限公司 | 一种制备太阳能电池行业ito旋转靶材的方法 |
CN116375463A (zh) * | 2023-04-17 | 2023-07-04 | 湘潭大学 | 一种氧化铟锡铈靶材及其制备方法和应用 |
CN116730710A (zh) * | 2023-02-07 | 2023-09-12 | 中山智隆新材料科技有限公司 | 一种高价元素掺杂的氧化铟锡材料及其制备方法和应用 |
CN116813329A (zh) * | 2023-05-30 | 2023-09-29 | 芜湖映日科技股份有限公司 | 一种高密度氧化锡钽靶材的制备方法 |
CN116854485A (zh) * | 2023-05-08 | 2023-10-10 | 芜湖映日科技股份有限公司 | 一种氧化铟锡靶材强度增加的烧结工艺方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012126937A (ja) * | 2010-12-13 | 2012-07-05 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
CN112723863A (zh) * | 2021-02-01 | 2021-04-30 | 韶关市欧莱高纯材料技术有限公司 | 一种高世代tft级细晶粒ito靶材的制造方法 |
-
2022
- 2022-05-10 CN CN202210503537.4A patent/CN114873992A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012126937A (ja) * | 2010-12-13 | 2012-07-05 | Sumitomo Metal Mining Co Ltd | Itoスパッタリングターゲットとその製造方法 |
CN112723863A (zh) * | 2021-02-01 | 2021-04-30 | 韶关市欧莱高纯材料技术有限公司 | 一种高世代tft级细晶粒ito靶材的制造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115745573A (zh) * | 2022-10-31 | 2023-03-07 | 芜湖映日科技股份有限公司 | 一种细晶izo靶材制备方法 |
CN115745574A (zh) * | 2022-11-18 | 2023-03-07 | 郑州大学 | 高致密无开裂细晶铟锡氧化物管状靶材的制备方法 |
CN115745574B (zh) * | 2022-11-18 | 2023-10-10 | 郑州大学 | 高致密无开裂细晶铟锡氧化物管状靶材的制备方法 |
CN115893989A (zh) * | 2022-12-29 | 2023-04-04 | 芜湖映日科技股份有限公司 | 一种细化ito靶材微观晶粒结构增强机械强度的工艺方法 |
CN116730710A (zh) * | 2023-02-07 | 2023-09-12 | 中山智隆新材料科技有限公司 | 一种高价元素掺杂的氧化铟锡材料及其制备方法和应用 |
CN116332637A (zh) * | 2023-02-14 | 2023-06-27 | 芜湖映日科技股份有限公司 | 一种制备太阳能电池行业ito旋转靶材的方法 |
CN116375463A (zh) * | 2023-04-17 | 2023-07-04 | 湘潭大学 | 一种氧化铟锡铈靶材及其制备方法和应用 |
CN116854485A (zh) * | 2023-05-08 | 2023-10-10 | 芜湖映日科技股份有限公司 | 一种氧化铟锡靶材强度增加的烧结工艺方法 |
CN116813329A (zh) * | 2023-05-30 | 2023-09-29 | 芜湖映日科技股份有限公司 | 一种高密度氧化锡钽靶材的制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN114873992A (zh) | 一种高铟含量的ito靶材的制备方法 | |
CN114032517A (zh) | 稀土离子掺杂ito靶材的制备方法 | |
CN101319307B (zh) | 一种氧化铟锡靶材的生产方法 | |
CN108623298A (zh) | 一种高密度氧化铟锡管状靶材的脱脂烧结一体化制备方法 | |
CN113563103B (zh) | 一种采用流延成型法制备梯度氧化铝多孔陶瓷的方法 | |
CN107032781A (zh) | 一种注浆成型高密度azo靶材的制备方法 | |
WO2021169418A1 (zh) | ITiO旋转靶材及其制备方法 | |
WO2013108715A1 (ja) | セラミックス円筒形スパッタリングターゲット材およびその製造方法 | |
US20130206590A1 (en) | Manufacture of High Density Indium Tin Oxide (ITO) Sputtering Target | |
JP2011519817A (ja) | 高密度itoスパッタリングターゲットの製造方法 | |
CN113277859B (zh) | 一种纳米包覆氧化铝颗粒及用其制备的高纯抗热震氧化铝陶瓷材料 | |
CN114524664B (zh) | 一种太阳能电池用陶瓷靶材及其制备方法 | |
CN106966700A (zh) | 一种氧化铟锡烧结体的短流程制备工艺 | |
KR101729054B1 (ko) | 분무 건조법을 이용한 알루미나 과립의 제조방법 | |
CN113735567A (zh) | 一种氧化物平面靶及其制备方法 | |
CN102974833B (zh) | 片状银粉的制备方法 | |
CN106631049A (zh) | 一种常压烧结用于触摸屏和太阳能电池领域的ito旋转靶材的方法 | |
CN105478788B (zh) | 一种生产片状银粉的方法 | |
CN112759398B (zh) | 碳化硼陶瓷及其制备方法 | |
KR20110083681A (ko) | Ito 소결체의 제조 방법 및 ito 스퍼터링 타겟의 제조 방법 | |
CN114409380A (zh) | 一种ito靶材废料的回收利用方法 | |
CN105112859A (zh) | 一种钠掺杂钼平面靶材的制备方法 | |
CN110467462A (zh) | 一种高致密低电阻氧化铌旋转靶材及其制备方法 | |
CN116715516A (zh) | 一种稀土掺杂的ito靶材及其制备方法 | |
CN110395978A (zh) | 一种抽滤成型装置以及制备ito平面靶材的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220809 |