CN114730739A - 半导体结构及其制作方法 - Google Patents

半导体结构及其制作方法 Download PDF

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CN114730739A
CN114730739A CN201980102498.3A CN201980102498A CN114730739A CN 114730739 A CN114730739 A CN 114730739A CN 201980102498 A CN201980102498 A CN 201980102498A CN 114730739 A CN114730739 A CN 114730739A
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semiconductor layer
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CN114730739B (zh
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程凯
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Enkris Semiconductor Inc
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Abstract

本申请提供了一种半导体结构及其制作方法，制作方法中，提供第一P型半导体层，在第一P型半导体层上依次形成N型半导体层与第二P型半导体层，第一P型半导体层、N型半导体层以及第二P型半导体层都包括GaN基材料；其中，所提供的第一P型半导体层中，控制上表面为Ga面；形成N型半导体层时，控制上表面为N面；形成第二P型半导体层时，控制上表面为N面。利用湿法刻蚀的方向性，使得从第二P型半导体层的N面开始刻蚀，自动停止于第一P型半导体层的Ga面，可以避免第一P型半导体层的过刻蚀以及空穴载流子浓度下降。之后干法刻蚀第二P型半导体层，停止于N型半导体层的上表面，有利于降低N型半导体层的电连接结构的接触电阻。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201980102498.3A 2019-12-05 2019-12-05 半导体结构及其制作方法 Active CN114730739B (zh)

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Citations (5)

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US6245687B1 (en) * 2000-01-26 2001-06-12 Trw Inc. Precision wide band gap semiconductor etching
JP2010087376A (ja) * 2008-10-01 2010-04-15 Toyota Central R&D Labs Inc 半導体積層体を含む半導体装置の製造方法
CN103378240A (zh) * 2012-04-26 2013-10-30 Lg伊诺特有限公司 发光器件和发光器件封装件
US20140117376A1 (en) * 2012-10-30 2014-05-01 Hitachi Metals, Ltd. Nitride Semiconductor Element and Method of Manufacturing the Same
CN109844958A (zh) * 2016-08-26 2019-06-04 学校法人法政大学 半导体装置及其制造方法

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CN1138025C (zh) * 2001-12-13 2004-02-11 南京大学 一种控制氮化镓(GaN)极性的方法
JP2005079417A (ja) * 2003-09-02 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置及びヘテロ接合バイポーラトランジスタ
JP2009099798A (ja) * 2007-10-17 2009-05-07 Toshiba Corp 窒化物系半導体及びその製造方法
US7875534B2 (en) * 2008-07-21 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Realizing N-face III-nitride semiconductors by nitridation treatment
JP2016167500A (ja) * 2015-03-09 2016-09-15 株式会社東芝 半導体装置の製造方法
WO2016205751A1 (en) * 2015-06-19 2016-12-22 QMAT, Inc. Bond and release layer transfer process
JP2018010896A (ja) * 2016-07-11 2018-01-18 株式会社村田製作所 ヘテロ接合バイポーラトランジスタ
CN108023001B (zh) * 2017-11-30 2020-03-10 武汉大学 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法
CN113892186B (zh) * 2019-03-26 2024-05-03 苏州晶湛半导体有限公司 一种半导体结构及其制造方法
CN110504330B (zh) * 2019-07-29 2022-11-08 广微集成技术（深圳）有限公司 一种肖特基二极管及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245687B1 (en) * 2000-01-26 2001-06-12 Trw Inc. Precision wide band gap semiconductor etching
JP2010087376A (ja) * 2008-10-01 2010-04-15 Toyota Central R&D Labs Inc 半導体積層体を含む半導体装置の製造方法
CN103378240A (zh) * 2012-04-26 2013-10-30 Lg伊诺特有限公司 发光器件和发光器件封装件
US20140117376A1 (en) * 2012-10-30 2014-05-01 Hitachi Metals, Ltd. Nitride Semiconductor Element and Method of Manufacturing the Same
CN109844958A (zh) * 2016-08-26 2019-06-04 学校法人法政大学 半导体装置及其制造方法

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TWI797513B (zh) 2023-04-01
US20220262933A1 (en) 2022-08-18
TW202137405A (zh) 2021-10-01
CN114730739B (zh) 2023-06-06
WO2021109075A1 (zh) 2021-06-10

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