CN114730144A - 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 - Google Patents

抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 Download PDF

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Publication number
CN114730144A
CN114730144A CN202080079209.5A CN202080079209A CN114730144A CN 114730144 A CN114730144 A CN 114730144A CN 202080079209 A CN202080079209 A CN 202080079209A CN 114730144 A CN114730144 A CN 114730144A
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CN
China
Prior art keywords
resist
resist pattern
replacement liquid
resist patterns
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080079209.5A
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English (en)
Chinese (zh)
Inventor
山本和磨
绢田贵史
长原达郎
石井牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
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Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN114730144A publication Critical patent/CN114730144A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202080079209.5A 2019-11-18 2020-11-16 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法 Pending CN114730144A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
JP2019-207844 2019-11-18
PCT/EP2020/082179 WO2021099235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same

Publications (1)

Publication Number Publication Date
CN114730144A true CN114730144A (zh) 2022-07-08

Family

ID=73455692

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080079209.5A Pending CN114730144A (zh) 2019-11-18 2020-11-16 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法

Country Status (7)

Country Link
US (1) US20230045307A1 (enExample)
EP (1) EP4062235A1 (enExample)
JP (3) JP2021081545A (enExample)
KR (1) KR20220104768A (enExample)
CN (1) CN114730144A (enExample)
TW (1) TWI887299B (enExample)
WO (1) WO2021099235A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
KR20250127318A (ko) * 2022-12-26 2025-08-26 메르크 파텐트 게엠베하 전자기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
WO2024149777A1 (en) * 2023-01-13 2024-07-18 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
WO2025087999A1 (en) * 2023-10-25 2025-05-01 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

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US20050284502A1 (en) * 2004-06-25 2005-12-29 Shin-Etsu Chemical Co., Ltd. Rinse and resist patterning process using the same
CN1947065A (zh) * 2004-04-23 2007-04-11 东京应化工业株式会社 抗蚀图案的形成方法及复合冲洗液
CN101010640A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用显影液组合物与抗蚀图案的形成方法
US20130280913A1 (en) * 2010-12-09 2013-10-24 Nissan Chemical Industries, Ltd. Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

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JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
KR20080069252A (ko) 2006-01-11 2008-07-25 토쿄오오카코교 가부시기가이샤 리소그래피용 세정제 및 그것을 이용한 레지스트 패턴형성방법
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
KR20170069268A (ko) 2014-10-14 2017-06-20 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 레지스트 패턴 처리용 조성물 및 이를 사용한 패턴 형성 방법
JP6428568B2 (ja) * 2014-11-27 2018-11-28 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6455397B2 (ja) * 2014-11-27 2019-01-23 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
WO2017126554A1 (ja) * 2016-01-22 2017-07-27 富士フイルム株式会社 処理液
CN109313398B (zh) * 2016-06-20 2022-08-02 Az电子材料（卢森堡）有限公司 冲洗组合物、形成抗蚀剂图案的方法以及半导体器件的制备方法
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
KR102287420B1 (ko) 2016-11-25 2021-08-11 리지필드 액퀴지션 리소그래피 조성물, 레지스트 패턴의 형성 방법 및 반도체 장치의 제조 방법
JP2018127513A (ja) 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1947065A (zh) * 2004-04-23 2007-04-11 东京应化工业株式会社 抗蚀图案的形成方法及复合冲洗液
US20050284502A1 (en) * 2004-06-25 2005-12-29 Shin-Etsu Chemical Co., Ltd. Rinse and resist patterning process using the same
CN101010640A (zh) * 2004-09-01 2007-08-01 东京应化工业株式会社 光蚀刻用显影液组合物与抗蚀图案的形成方法
US20130280913A1 (en) * 2010-12-09 2013-10-24 Nissan Chemical Industries, Ltd. Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

Also Published As

Publication number Publication date
TW202124692A (zh) 2021-07-01
JP2025114656A (ja) 2025-08-05
TWI887299B (zh) 2025-06-21
EP4062235A1 (en) 2022-09-28
WO2021099235A1 (en) 2021-05-27
KR20220104768A (ko) 2022-07-26
JP2023502837A (ja) 2023-01-26
JP7732976B2 (ja) 2025-09-02
US20230045307A1 (en) 2023-02-09
JP2021081545A (ja) 2021-05-27

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