KR20220104768A - 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법 - Google Patents

레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법 Download PDF

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Publication number
KR20220104768A
KR20220104768A KR1020227020742A KR20227020742A KR20220104768A KR 20220104768 A KR20220104768 A KR 20220104768A KR 1020227020742 A KR1020227020742 A KR 1020227020742A KR 20227020742 A KR20227020742 A KR 20227020742A KR 20220104768 A KR20220104768 A KR 20220104768A
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KR
South Korea
Prior art keywords
resist
resist pattern
alkyl
liquid
replacement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227020742A
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English (en)
Korean (ko)
Inventor
카즈마 야마모토
타카후미 키누타
타츠로 나가하라
마키 이시이
Original Assignee
메르크 파텐트 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 메르크 파텐트 게엠베하 filed Critical 메르크 파텐트 게엠베하
Publication of KR20220104768A publication Critical patent/KR20220104768A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020227020742A 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법 Pending KR20220104768A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-207844 2019-11-18
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
PCT/EP2020/082179 WO2021099235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same

Publications (1)

Publication Number Publication Date
KR20220104768A true KR20220104768A (ko) 2022-07-26

Family

ID=73455692

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227020742A Pending KR20220104768A (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법

Country Status (7)

Country Link
US (1) US20230045307A1 (enExample)
EP (1) EP4062235A1 (enExample)
JP (3) JP2021081545A (enExample)
KR (1) KR20220104768A (enExample)
CN (1) CN114730144A (enExample)
TW (1) TWI887299B (enExample)
WO (1) WO2021099235A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20250137630A (ko) * 2023-01-13 2025-09-18 메르크 파텐트 게엠베하 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
WO2025087999A1 (en) * 2023-10-25 2025-05-01 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

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WO2016060116A1 (ja) 2014-10-14 2016-04-21 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 レジストパターン処理用組成物およびそれを用いたパターン形成方法
WO2018095885A1 (en) 2016-11-25 2018-05-31 Az Electronic Materials (Luxembourg) S.A.R.L. A lithography composition, a method for forming resist patterns and a method for making semiconductor devices

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US7811748B2 (en) * 2004-04-23 2010-10-12 Tokyo Ohka Kogyo Co., Ltd. Resist pattern forming method and composite rinse agent
JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
EP1804124A1 (en) * 2004-09-01 2007-07-04 Tokyo Ohka Kogyo Co., Ltd. Developing solution composition for lithography and method for resist pattern formation
KR20080069252A (ko) * 2006-01-11 2008-07-25 토쿄오오카코교 가부시기가이샤 리소그래피용 세정제 및 그것을 이용한 레지스트 패턴형성방법
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
CN103229104B (zh) * 2010-12-09 2016-08-24 日产化学工业株式会社 包含含有羟基的咔唑酚醛清漆树脂的形成抗蚀剂下层膜的组合物
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP6455397B2 (ja) * 2014-11-27 2019-01-23 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6428568B2 (ja) * 2014-11-27 2018-11-28 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
KR102113463B1 (ko) * 2016-01-22 2020-05-21 후지필름 가부시키가이샤 처리액
KR102083151B1 (ko) * 2016-06-20 2020-03-03 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 린스 조성물, 레지스트 패턴의 형성 방법 및 반도체 디바이스의 제조 방법
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

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WO2016060116A1 (ja) 2014-10-14 2016-04-21 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 レジストパターン処理用組成物およびそれを用いたパターン形成方法
WO2018095885A1 (en) 2016-11-25 2018-05-31 Az Electronic Materials (Luxembourg) S.A.R.L. A lithography composition, a method for forming resist patterns and a method for making semiconductor devices

Also Published As

Publication number Publication date
JP2023502837A (ja) 2023-01-26
JP2025114656A (ja) 2025-08-05
CN114730144A (zh) 2022-07-08
TWI887299B (zh) 2025-06-21
JP2021081545A (ja) 2021-05-27
TW202124692A (zh) 2021-07-01
JP7732976B2 (ja) 2025-09-02
WO2021099235A1 (en) 2021-05-27
EP4062235A1 (en) 2022-09-28
US20230045307A1 (en) 2023-02-09

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