TWI887299B - 光阻圖案間置換液、及使用其之光阻圖案之製造方法 - Google Patents

光阻圖案間置換液、及使用其之光阻圖案之製造方法 Download PDF

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Publication number
TWI887299B
TWI887299B TW109140073A TW109140073A TWI887299B TW I887299 B TWI887299 B TW I887299B TW 109140073 A TW109140073 A TW 109140073A TW 109140073 A TW109140073 A TW 109140073A TW I887299 B TWI887299 B TW I887299B
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TW
Taiwan
Prior art keywords
photoresist pattern
photoresist
alkyl
mass
liquid
Prior art date
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TW109140073A
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English (en)
Chinese (zh)
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TW202124692A (zh
Inventor
山本和磨
絹田貴史
長原達郎
石井牧
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德商默克專利有限公司
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Publication of TW202124692A publication Critical patent/TW202124692A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109140073A 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法 TWI887299B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
JP2019-207844 2019-11-18

Publications (2)

Publication Number Publication Date
TW202124692A TW202124692A (zh) 2021-07-01
TWI887299B true TWI887299B (zh) 2025-06-21

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ID=73455692

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TW109140073A TWI887299B (zh) 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法

Country Status (7)

Country Link
US (1) US20230045307A1 (enExample)
EP (1) EP4062235A1 (enExample)
JP (3) JP2021081545A (enExample)
KR (1) KR20220104768A (enExample)
CN (1) CN114730144A (enExample)
TW (1) TWI887299B (enExample)
WO (1) WO2021099235A1 (enExample)

Families Citing this family (5)

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JP2022175281A (ja) 2021-05-13 2022-11-25 トヨタ自動車株式会社 提案システムおよび提案方法
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20250137630A (ko) * 2023-01-13 2025-09-18 메르크 파텐트 게엠베하 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
KR20240170272A (ko) * 2023-05-26 2024-12-03 삼성에스디아이 주식회사 금속 함유 포토레지스트 현상액 조성물, 및 이를 이용한 현상 단계를 포함하는 패턴 형성 방법
WO2025087999A1 (en) * 2023-10-25 2025-05-01 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

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US7811748B2 (en) * 2004-04-23 2010-10-12 Tokyo Ohka Kogyo Co., Ltd. Resist pattern forming method and composite rinse agent
JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
EP1804124A1 (en) * 2004-09-01 2007-07-04 Tokyo Ohka Kogyo Co., Ltd. Developing solution composition for lithography and method for resist pattern formation
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US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
CN103229104B (zh) * 2010-12-09 2016-08-24 日产化学工业株式会社 包含含有羟基的咔唑酚醛清漆树脂的形成抗蚀剂下层膜的组合物
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP6553074B2 (ja) 2014-10-14 2019-07-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ レジストパターン処理用組成物およびそれを用いたパターン形成方法
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KR102083151B1 (ko) * 2016-06-20 2020-03-03 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 린스 조성물, 레지스트 패턴의 형성 방법 및 반도체 디바이스의 제조 방법
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
JP6766266B2 (ja) 2016-11-25 2020-10-07 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ リソグラフィ組成物、レジストパターンの形成方法および半導体素子の製造方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

Patent Citations (1)

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US20050284502A1 (en) * 2004-06-25 2005-12-29 Shin-Etsu Chemical Co., Ltd. Rinse and resist patterning process using the same

Also Published As

Publication number Publication date
JP2023502837A (ja) 2023-01-26
JP2025114656A (ja) 2025-08-05
CN114730144A (zh) 2022-07-08
JP2021081545A (ja) 2021-05-27
TW202124692A (zh) 2021-07-01
JP7732976B2 (ja) 2025-09-02
WO2021099235A1 (en) 2021-05-27
KR20220104768A (ko) 2022-07-26
EP4062235A1 (en) 2022-09-28
US20230045307A1 (en) 2023-02-09

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