JP2021081545A - レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法 - Google Patents

レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法 Download PDF

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Publication number
JP2021081545A
JP2021081545A JP2019207844A JP2019207844A JP2021081545A JP 2021081545 A JP2021081545 A JP 2021081545A JP 2019207844 A JP2019207844 A JP 2019207844A JP 2019207844 A JP2019207844 A JP 2019207844A JP 2021081545 A JP2021081545 A JP 2021081545A
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JP
Japan
Prior art keywords
resist pattern
resist
alkyl
replacement
resist patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019207844A
Other languages
English (en)
Japanese (ja)
Inventor
和磨 山本
Kazuma Yamamoto
和磨 山本
貴史 絹田
Takashi Kinuta
貴史 絹田
長原　達郎
Tatsuro Nagahara
達郎 長原
牧 石井
Maki Ishii
牧 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Priority to JP2019207844A priority Critical patent/JP2021081545A/ja
Priority to KR1020227020742A priority patent/KR20220104768A/ko
Priority to PCT/EP2020/082179 priority patent/WO2021099235A1/en
Priority to JP2022516211A priority patent/JP7732976B2/ja
Priority to EP20808057.2A priority patent/EP4062235A1/en
Priority to US17/777,638 priority patent/US20230045307A1/en
Priority to CN202080079209.5A priority patent/CN114730144A/zh
Priority to TW109140073A priority patent/TWI887299B/zh
Publication of JP2021081545A publication Critical patent/JP2021081545A/ja
Priority to JP2025075386A priority patent/JP2025114656A/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2019207844A 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法 Pending JP2021081545A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
KR1020227020742A KR20220104768A (ko) 2019-11-18 2020-11-16 레지스트 패턴간 충전액의 대체액 및 이를 이용한 레지스트 패턴의 제조 방법
PCT/EP2020/082179 WO2021099235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same
JP2022516211A JP7732976B2 (ja) 2019-11-18 2020-11-16 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
EP20808057.2A EP4062235A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same
US17/777,638 US20230045307A1 (en) 2019-11-18 2020-11-16 Replacement liquid of liquid filling between resist patterns, and method for producing resist patterns using the same
CN202080079209.5A CN114730144A (zh) 2019-11-18 2020-11-16 抗蚀图案间的置换液、以及使用其的抗蚀图案的制造方法
TW109140073A TWI887299B (zh) 2019-11-18 2020-11-17 光阻圖案間置換液、及使用其之光阻圖案之製造方法
JP2025075386A JP2025114656A (ja) 2019-11-18 2025-04-30 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019207844A JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法

Publications (1)

Publication Number Publication Date
JP2021081545A true JP2021081545A (ja) 2021-05-27

Family

ID=73455692

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2019207844A Pending JP2021081545A (ja) 2019-11-18 2019-11-18 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
JP2022516211A Active JP7732976B2 (ja) 2019-11-18 2020-11-16 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
JP2025075386A Pending JP2025114656A (ja) 2019-11-18 2025-04-30 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2022516211A Active JP7732976B2 (ja) 2019-11-18 2020-11-16 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
JP2025075386A Pending JP2025114656A (ja) 2019-11-18 2025-04-30 レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法

Country Status (7)

Country Link
US (1) US20230045307A1 (enExample)
EP (1) EP4062235A1 (enExample)
JP (3) JP2021081545A (enExample)
KR (1) KR20220104768A (enExample)
CN (1) CN114730144A (enExample)
TW (1) TWI887299B (enExample)
WO (1) WO2021099235A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4089614A1 (en) 2021-05-13 2022-11-16 Toyota Jidosha Kabushiki Kaisha Proposal system and proposal method
JP2024170295A (ja) * 2023-05-26 2024-12-06 三星エスディアイ株式会社 金属含有フォトレジスト現像液組成物、およびこれを利用した現像段階を含むパターン形成方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024141355A1 (en) * 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
KR20250137630A (ko) * 2023-01-13 2025-09-18 메르크 파텐트 게엠베하 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
WO2025087999A1 (en) * 2023-10-25 2025-05-01 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19822441A1 (de) * 1997-06-24 1999-01-28 Heidelberger Druckmasch Ag Druckformreinigungsverfahren
US7811748B2 (en) * 2004-04-23 2010-10-12 Tokyo Ohka Kogyo Co., Ltd. Resist pattern forming method and composite rinse agent
JP4493393B2 (ja) * 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
EP1804124A1 (en) * 2004-09-01 2007-07-04 Tokyo Ohka Kogyo Co., Ltd. Developing solution composition for lithography and method for resist pattern formation
KR20080069252A (ko) * 2006-01-11 2008-07-25 토쿄오오카코교 가부시기가이샤 리소그래피용 세정제 및 그것을 이용한 레지스트 패턴형성방법
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
CN103229104B (zh) * 2010-12-09 2016-08-24 日产化学工业株式会社 包含含有羟基的咔唑酚醛清漆树脂的形成抗蚀剂下层膜的组合物
JP5705607B2 (ja) * 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP6553074B2 (ja) 2014-10-14 2019-07-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ レジストパターン処理用組成物およびそれを用いたパターン形成方法
JP6455397B2 (ja) * 2014-11-27 2019-01-23 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
JP6428568B2 (ja) * 2014-11-27 2018-11-28 信越化学工業株式会社 パターン形成用リンス溶液及びパターン形成方法
KR102113463B1 (ko) * 2016-01-22 2020-05-21 후지필름 가부시키가이샤 처리액
KR102083151B1 (ko) * 2016-06-20 2020-03-03 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 린스 조성물, 레지스트 패턴의 형성 방법 및 반도체 디바이스의 제조 방법
JP6759174B2 (ja) * 2016-11-07 2020-09-23 富士フイルム株式会社 処理液及びパターン形成方法
JP6766266B2 (ja) 2016-11-25 2020-10-07 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ リソグラフィ組成物、レジストパターンの形成方法および半導体素子の製造方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4089614A1 (en) 2021-05-13 2022-11-16 Toyota Jidosha Kabushiki Kaisha Proposal system and proposal method
JP2024170295A (ja) * 2023-05-26 2024-12-06 三星エスディアイ株式会社 金属含有フォトレジスト現像液組成物、およびこれを利用した現像段階を含むパターン形成方法

Also Published As

Publication number Publication date
JP2023502837A (ja) 2023-01-26
JP2025114656A (ja) 2025-08-05
CN114730144A (zh) 2022-07-08
TWI887299B (zh) 2025-06-21
TW202124692A (zh) 2021-07-01
JP7732976B2 (ja) 2025-09-02
WO2021099235A1 (en) 2021-05-27
KR20220104768A (ko) 2022-07-26
EP4062235A1 (en) 2022-09-28
US20230045307A1 (en) 2023-02-09

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