CN113853782B - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN113853782B
CN113853782B CN202080037995.2A CN202080037995A CN113853782B CN 113853782 B CN113853782 B CN 113853782B CN 202080037995 A CN202080037995 A CN 202080037995A CN 113853782 B CN113853782 B CN 113853782B
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China
Prior art keywords
substrate
region
dielectric constant
low dielectric
pixel
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CN202080037995.2A
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Chinese (zh)
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CN113853782A (zh
Inventor
伊藤大介
富田一行
羽根田雅希
铃木毅
南孝明
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080037995.2A 2019-06-26 2020-06-22 摄像装置 Active CN113853782B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-118647 2019-06-26
JP2019118647 2019-06-26
PCT/JP2020/024448 WO2020262320A1 (ja) 2019-06-26 2020-06-22 撮像装置

Publications (2)

Publication Number Publication Date
CN113853782A CN113853782A (zh) 2021-12-28
CN113853782B true CN113853782B (zh) 2024-08-13

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Country Status (5)

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US (2) US12052525B2 (https=)
JP (1) JP7633157B2 (https=)
CN (1) CN113853782B (https=)
TW (1) TWI872085B (https=)
WO (1) WO2020262320A1 (https=)

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JP2022184222A (ja) * 2021-05-31 2022-12-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
WO2023131993A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体、半導体基板
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DE102023204145A1 (de) * 2022-05-18 2023-11-23 Canon Kabushiki Kaisha Strahlungsdetektor und strahlungsbildgebungssystem
CN116130499A (zh) * 2022-05-31 2023-05-16 神盾股份有限公司 光感测单元及光感测装置
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WO2024122395A1 (ja) * 2022-12-07 2024-06-13 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法
CN120266602A (zh) * 2022-12-28 2025-07-04 索尼半导体解决方案公司 固态成像装置
CN120883753A (zh) * 2023-03-31 2025-10-31 索尼半导体解决方案公司 光检测器和电子设备
CN121795114A (zh) * 2023-09-27 2026-04-03 索尼半导体解决方案公司 半导体装置和光检测装置
CN117457650B (zh) * 2023-12-21 2024-04-05 合肥晶合集成电路股份有限公司 一种半导体集成器件及其制造方法
KR20250171994A (ko) * 2024-05-31 2025-12-09 에스케이하이닉스 주식회사 이미지 센싱 장치 및 이를 포함하는 촬영 장치
WO2025263397A1 (ja) * 2024-06-20 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出素子及び電子機器

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Also Published As

Publication number Publication date
CN113853782A (zh) 2021-12-28
US12052525B2 (en) 2024-07-30
JPWO2020262320A1 (https=) 2020-12-30
TW202105758A (zh) 2021-02-01
US20220353449A1 (en) 2022-11-03
JP7633157B2 (ja) 2025-02-19
US20240381008A1 (en) 2024-11-14
WO2020262320A1 (ja) 2020-12-30
TWI872085B (zh) 2025-02-11

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