TWI872085B - 攝像裝置 - Google Patents

攝像裝置 Download PDF

Info

Publication number
TWI872085B
TWI872085B TW109120903A TW109120903A TWI872085B TW I872085 B TWI872085 B TW I872085B TW 109120903 A TW109120903 A TW 109120903A TW 109120903 A TW109120903 A TW 109120903A TW I872085 B TWI872085 B TW I872085B
Authority
TW
Taiwan
Prior art keywords
substrate
dielectric constant
pixel
low dielectric
wiring
Prior art date
Application number
TW109120903A
Other languages
English (en)
Chinese (zh)
Other versions
TW202105758A (zh
Inventor
伊藤大介
富田一行
羽根田雅希
鈴木毅
南孝明
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202105758A publication Critical patent/TW202105758A/zh
Application granted granted Critical
Publication of TWI872085B publication Critical patent/TWI872085B/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW109120903A 2019-06-26 2020-06-19 攝像裝置 TWI872085B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-118647 2019-06-26
JP2019118647 2019-06-26

Publications (2)

Publication Number Publication Date
TW202105758A TW202105758A (zh) 2021-02-01
TWI872085B true TWI872085B (zh) 2025-02-11

Family

ID=74060099

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109120903A TWI872085B (zh) 2019-06-26 2020-06-19 攝像裝置

Country Status (5)

Country Link
US (2) US12052525B2 (https=)
JP (1) JP7633157B2 (https=)
CN (1) CN113853782B (https=)
TW (1) TWI872085B (https=)
WO (1) WO2020262320A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220231064A1 (en) * 2021-01-19 2022-07-21 Samsung Electronics Co., Ltd. Image sensor with multiple color filters
JP2022147587A (ja) * 2021-03-23 2022-10-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP7756713B2 (ja) * 2021-05-26 2025-10-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2022184222A (ja) * 2021-05-31 2022-12-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
WO2023131993A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体、半導体基板
US20250169217A1 (en) * 2022-02-22 2025-05-22 Sony Semiconductor Solutions Corporation Semiconductor device and electronic device
JP2023130928A (ja) * 2022-03-08 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置、及び電子機器
JP2023146662A (ja) * 2022-03-29 2023-10-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system
DE102023204145A1 (de) * 2022-05-18 2023-11-23 Canon Kabushiki Kaisha Strahlungsdetektor und strahlungsbildgebungssystem
CN116130499A (zh) * 2022-05-31 2023-05-16 神盾股份有限公司 光感测单元及光感测装置
WO2024075405A1 (ja) * 2022-10-04 2024-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2024063426A (ja) * 2022-10-26 2024-05-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2024122395A1 (ja) * 2022-12-07 2024-06-13 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法
CN120266602A (zh) * 2022-12-28 2025-07-04 索尼半导体解决方案公司 固态成像装置
CN120883753A (zh) * 2023-03-31 2025-10-31 索尼半导体解决方案公司 光检测器和电子设备
CN121795114A (zh) * 2023-09-27 2026-04-03 索尼半导体解决方案公司 半导体装置和光检测装置
CN117457650B (zh) * 2023-12-21 2024-04-05 合肥晶合集成电路股份有限公司 一种半导体集成器件及其制造方法
KR20250171994A (ko) * 2024-05-31 2025-12-09 에스케이하이닉스 주식회사 이미지 센싱 장치 및 이를 포함하는 촬영 장치
WO2025263397A1 (ja) * 2024-06-20 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出素子及び電子機器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022561A (ja) * 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
US20180152657A1 (en) * 2015-05-15 2018-05-31 Sony Corporation Solid-state imaging apparatus, manufacturing method of the same, and electronic device
US20180323231A1 (en) * 2016-01-19 2018-11-08 Olympus Corporation Solid-state imaging device and imaging apparatus
CN109328395A (zh) * 2016-08-25 2019-02-12 索尼半导体解决方案公司 半导体装置、摄像装置及半导体装置制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP2012015400A (ja) 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP5570377B2 (ja) * 2010-09-30 2014-08-13 キヤノン株式会社 固体撮像装置
JP5791571B2 (ja) * 2011-08-02 2015-10-07 キヤノン株式会社 撮像素子及び撮像装置
TWI583195B (zh) 2012-07-06 2017-05-11 新力股份有限公司 A solid-state imaging device and a solid-state imaging device, and an electronic device
JP6245474B2 (ja) * 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
WO2018186196A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
DE112018001859T5 (de) 2017-04-04 2019-12-19 Sony Semiconductor Solutions Corporation Festkörper-Bildaufnahmevorrichtung und elektronisches Gerät
JP6957226B2 (ja) 2017-06-20 2021-11-02 キヤノン株式会社 光電変換装置および機器
KR102421726B1 (ko) * 2017-09-25 2022-07-15 삼성전자주식회사 이미지 센서
US10498996B2 (en) * 2017-11-14 2019-12-03 Semiconductor Components Industries, Llc Pixel control signal verification in a stacked image sensor
JP7313829B2 (ja) * 2019-01-29 2023-07-25 キヤノン株式会社 撮像素子および撮像装置
JP2020191334A (ja) * 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
KR102771906B1 (ko) * 2019-11-06 2025-02-28 삼성전자주식회사 이미지 센서 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022561A (ja) * 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
US20180152657A1 (en) * 2015-05-15 2018-05-31 Sony Corporation Solid-state imaging apparatus, manufacturing method of the same, and electronic device
US20180323231A1 (en) * 2016-01-19 2018-11-08 Olympus Corporation Solid-state imaging device and imaging apparatus
CN109328395A (zh) * 2016-08-25 2019-02-12 索尼半导体解决方案公司 半导体装置、摄像装置及半导体装置制造方法

Also Published As

Publication number Publication date
CN113853782B (zh) 2024-08-13
CN113853782A (zh) 2021-12-28
US12052525B2 (en) 2024-07-30
JPWO2020262320A1 (https=) 2020-12-30
TW202105758A (zh) 2021-02-01
US20220353449A1 (en) 2022-11-03
JP7633157B2 (ja) 2025-02-19
US20240381008A1 (en) 2024-11-14
WO2020262320A1 (ja) 2020-12-30

Similar Documents

Publication Publication Date Title
TWI872085B (zh) 攝像裝置
TWI878310B (zh) 半導體裝置
TWI852991B (zh) 攝像裝置
TWI853953B (zh) 攝像裝置
TWI848008B (zh) 攝像元件及電子機器
TWI904094B (zh) 攝像裝置
TWI867000B (zh) 攝像裝置
TWI868171B (zh) 攝像裝置
TWI888385B (zh) 攝像裝置
TWI774113B (zh) 攝像元件及攝像元件之製造方法
TWI853040B (zh) 半導體裝置及攝像裝置
WO2022254824A1 (ja) 撮像素子
WO2020179494A1 (ja) 半導体装置および撮像装置
US20230275020A1 (en) Wiring structure, method of manufacturing the same, and imaging device
WO2022014400A1 (ja) 配線構造およびその製造方法、ならびに撮像装置