JPWO2020262320A1 - - Google Patents

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Publication number
JPWO2020262320A1
JPWO2020262320A1 JP2021526985A JP2021526985A JPWO2020262320A1 JP WO2020262320 A1 JPWO2020262320 A1 JP WO2020262320A1 JP 2021526985 A JP2021526985 A JP 2021526985A JP 2021526985 A JP2021526985 A JP 2021526985A JP WO2020262320 A1 JPWO2020262320 A1 JP WO2020262320A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021526985A
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Japanese (ja)
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JP7633157B2 (ja
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Publication of JPWO2020262320A1 publication Critical patent/JPWO2020262320A1/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021526985A 2019-06-26 2020-06-22 撮像装置 Active JP7633157B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019118647 2019-06-26
JP2019118647 2019-06-26
PCT/JP2020/024448 WO2020262320A1 (ja) 2019-06-26 2020-06-22 撮像装置

Publications (2)

Publication Number Publication Date
JPWO2020262320A1 true JPWO2020262320A1 (https=) 2020-12-30
JP7633157B2 JP7633157B2 (ja) 2025-02-19

Family

ID=74060099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021526985A Active JP7633157B2 (ja) 2019-06-26 2020-06-22 撮像装置

Country Status (5)

Country Link
US (2) US12052525B2 (https=)
JP (1) JP7633157B2 (https=)
CN (1) CN113853782B (https=)
TW (1) TWI872085B (https=)
WO (1) WO2020262320A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220231064A1 (en) * 2021-01-19 2022-07-21 Samsung Electronics Co., Ltd. Image sensor with multiple color filters
JP2022147587A (ja) * 2021-03-23 2022-10-06 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP7756713B2 (ja) * 2021-05-26 2025-10-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2022184222A (ja) * 2021-05-31 2022-12-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
WO2023131993A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体、半導体基板
US20250169217A1 (en) * 2022-02-22 2025-05-22 Sony Semiconductor Solutions Corporation Semiconductor device and electronic device
JP2023130928A (ja) * 2022-03-08 2023-09-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置、光検出装置、及び電子機器
JP2023146662A (ja) * 2022-03-29 2023-10-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
EP4280282A1 (en) * 2022-05-18 2023-11-22 Canon Kabushiki Kaisha Radiation detector and radiation imaging system
DE102023204145A1 (de) * 2022-05-18 2023-11-23 Canon Kabushiki Kaisha Strahlungsdetektor und strahlungsbildgebungssystem
CN116130499A (zh) * 2022-05-31 2023-05-16 神盾股份有限公司 光感测单元及光感测装置
WO2024075405A1 (ja) * 2022-10-04 2024-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2024063426A (ja) * 2022-10-26 2024-05-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2024122395A1 (ja) * 2022-12-07 2024-06-13 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法
CN120266602A (zh) * 2022-12-28 2025-07-04 索尼半导体解决方案公司 固态成像装置
CN120883753A (zh) * 2023-03-31 2025-10-31 索尼半导体解决方案公司 光检测器和电子设备
CN121795114A (zh) * 2023-09-27 2026-04-03 索尼半导体解决方案公司 半导体装置和光检测装置
CN117457650B (zh) * 2023-12-21 2024-04-05 合肥晶合集成电路股份有限公司 一种半导体集成器件及其制造方法
KR20250171994A (ko) * 2024-05-31 2025-12-09 에스케이하이닉스 주식회사 이미지 센싱 장치 및 이를 포함하는 촬영 장치
WO2025263397A1 (ja) * 2024-06-20 2025-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出素子及び電子機器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012079861A (ja) * 2010-09-30 2012-04-19 Canon Inc 固体撮像装置
WO2018037667A1 (ja) * 2016-08-25 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置、撮像装置、および半導体装置の製造方法
WO2018186194A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2019009154A (ja) * 2017-06-20 2019-01-17 キヤノン株式会社 光電変換装置および機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5791571B2 (ja) * 2011-08-02 2015-10-07 キヤノン株式会社 撮像素子及び撮像装置
TWI583195B (zh) 2012-07-06 2017-05-11 新力股份有限公司 A solid-state imaging device and a solid-state imaging device, and an electronic device
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP6245474B2 (ja) * 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
TWI692859B (zh) * 2015-05-15 2020-05-01 日商新力股份有限公司 固體攝像裝置及其製造方法、以及電子機器
JPWO2017126024A1 (ja) * 2016-01-19 2018-11-08 オリンパス株式会社 固体撮像装置および撮像装置
WO2018186196A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
KR102421726B1 (ko) * 2017-09-25 2022-07-15 삼성전자주식회사 이미지 센서
US10498996B2 (en) * 2017-11-14 2019-12-03 Semiconductor Components Industries, Llc Pixel control signal verification in a stacked image sensor
JP7313829B2 (ja) * 2019-01-29 2023-07-25 キヤノン株式会社 撮像素子および撮像装置
JP2020191334A (ja) * 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
KR102771906B1 (ko) * 2019-11-06 2025-02-28 삼성전자주식회사 이미지 센서 및 그 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012079861A (ja) * 2010-09-30 2012-04-19 Canon Inc 固体撮像装置
WO2018037667A1 (ja) * 2016-08-25 2018-03-01 ソニーセミコンダクタソリューションズ株式会社 半導体装置、撮像装置、および半導体装置の製造方法
WO2018186194A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
JP2019009154A (ja) * 2017-06-20 2019-01-17 キヤノン株式会社 光電変換装置および機器

Also Published As

Publication number Publication date
CN113853782B (zh) 2024-08-13
CN113853782A (zh) 2021-12-28
US12052525B2 (en) 2024-07-30
TW202105758A (zh) 2021-02-01
US20220353449A1 (en) 2022-11-03
JP7633157B2 (ja) 2025-02-19
US20240381008A1 (en) 2024-11-14
WO2020262320A1 (ja) 2020-12-30
TWI872085B (zh) 2025-02-11

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