CN113795566A - 量子点结构、其制作方法及量子点发光器件 - Google Patents

量子点结构、其制作方法及量子点发光器件 Download PDF

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CN113795566A
CN113795566A CN202080000438.3A CN202080000438A CN113795566A CN 113795566 A CN113795566 A CN 113795566A CN 202080000438 A CN202080000438 A CN 202080000438A CN 113795566 A CN113795566 A CN 113795566A
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quantum dot
precursor
shell
core structure
indium
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CN113795566B (zh
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杨绪勇
曹璠
王晓俊
叶海桥
柳杨
冯靖雯
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BOE Technology Group Co Ltd
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
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    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements

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  • Organic Chemistry (AREA)
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Abstract

本公开实施例提供了一种量子点结构、其制作方法及量子点发光器件,量子点结构,包括:核结构;壳层,包裹在核结构的表面;其中,核结构在靠近壳层的部位具有至少一种壳前驱体元素;壳前驱体元素为与壳层中的元素相同的元素。通过在形成团簇结构的阶段加入含配位溶剂的壳前驱体得到的,在成核过程中,配位溶剂具有表面钝化作用,减缓了纳米团簇结构转化为核结构的过程,可以改善量子点成核过程的可控性,壳前驱体吸附在纳米团簇结构的表面,可以避免量子点成核过程中发生高温熟化,在继续成核的过程中,使形成的核结构的尺寸分布更加均一,提升了量子点结构的色纯度。

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PCT国内申请,说明书已公开。

Claims (13)

  1. PCT国内申请,权利要求书已公开。
CN202080000438.3A 2020-03-30 2020-03-30 量子点结构、其制作方法及量子点发光器件 Active CN113795566B (zh)

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CN116162458B (zh) * 2021-11-24 2024-01-12 四川大学 一种幻数团簇/量子点的形成路径调控方法及利用该方法制备幻数团簇和量子点的应用

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CN102031110A (zh) * 2010-11-29 2011-04-27 天津大学 一种InP/ZnS核壳结构量子点及制备方法
CN107338048A (zh) * 2017-06-29 2017-11-10 深圳天吉新创科技有限公司 InP/GaP/ZnS核壳量子点及其制备方法
CN108641720A (zh) * 2018-06-08 2018-10-12 嘉兴纳鼎光电科技有限公司 一种量子点及其合成方法
CN108822856A (zh) * 2018-08-31 2018-11-16 嘉兴纳鼎光电科技有限公司 半导体纳米晶体及其制备方法
CN109971481A (zh) * 2019-03-15 2019-07-05 上海大学 基于外延生长InP壳层发光的无镉量子点的制备方法
CN110003884A (zh) * 2019-03-14 2019-07-12 纳晶科技股份有限公司 掺杂量子点及其制备方法、量子点光电器件
CN110129054A (zh) * 2019-04-10 2019-08-16 纳晶科技股份有限公司 核壳量子点及其制备方法、量子点光电器件
CN110746974A (zh) * 2018-07-24 2020-02-04 Tcl集团股份有限公司 量子点及其制备方法

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Publication number Priority date Publication date Assignee Title
CN106190128A (zh) * 2016-07-12 2016-12-07 青岛海信电器股份有限公司 量子点膜、背光模组及液晶显示设备
CN106634946A (zh) * 2016-09-28 2017-05-10 Tcl集团股份有限公司 无镉核壳量子点及其制备方法
JP6836133B2 (ja) * 2016-11-01 2021-02-24 スタンレー電気株式会社 量子ドット

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102031110A (zh) * 2010-11-29 2011-04-27 天津大学 一种InP/ZnS核壳结构量子点及制备方法
CN107338048A (zh) * 2017-06-29 2017-11-10 深圳天吉新创科技有限公司 InP/GaP/ZnS核壳量子点及其制备方法
CN108641720A (zh) * 2018-06-08 2018-10-12 嘉兴纳鼎光电科技有限公司 一种量子点及其合成方法
CN110746974A (zh) * 2018-07-24 2020-02-04 Tcl集团股份有限公司 量子点及其制备方法
CN108822856A (zh) * 2018-08-31 2018-11-16 嘉兴纳鼎光电科技有限公司 半导体纳米晶体及其制备方法
CN110003884A (zh) * 2019-03-14 2019-07-12 纳晶科技股份有限公司 掺杂量子点及其制备方法、量子点光电器件
CN109971481A (zh) * 2019-03-15 2019-07-05 上海大学 基于外延生长InP壳层发光的无镉量子点的制备方法
CN110129054A (zh) * 2019-04-10 2019-08-16 纳晶科技股份有限公司 核壳量子点及其制备方法、量子点光电器件

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