CN113748494B - 半导体装置的制造装置及制造方法 - Google Patents

半导体装置的制造装置及制造方法 Download PDF

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CN113748494B
CN113748494B CN202080030674.XA CN202080030674A CN113748494B CN 113748494 B CN113748494 B CN 113748494B CN 202080030674 A CN202080030674 A CN 202080030674A CN 113748494 B CN113748494 B CN 113748494B
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heating region
region
heating
temperature
semiconductor chip
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CN113748494A (zh
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瀬山耕平
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Shinkawa Ltd
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Shinkawa Ltd
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Abstract

一种可控制接合时的加热对象物的温度分布的、半导体装置的制造装置及制造方法。半导体装置的制造装置(10)包括：平台(16)，载置基板(100)；接合头(14)，与所述平台(16)相向配置，将半导体芯片(110)接合于所述基板(100)；以及控制器(18)，所述接合头(14)包含：附件(33)，吸引保持所述半导体芯片(110)；以及加热部(31)，装卸自如地保持所述附件(33)，并对所述附件(33)进行加热，且具有第一加热区域(32a)、及在水平方向包围所述第一加热区域(32a)的第二加热区域(32b)，所述控制器(18)独立地控制所述第一加热区域(32a)与第二加热区域(32b)的温度。

Description

半导体装置的制造装置及制造方法
技术领域
本说明书公开一种半导体装置的制造装置及制造方法，通过将一个以上的半导体芯片接合(bonding)于基板从而制造半导体装置。
背景技术
从前以来，已知有下述半导体装置的制造装置，所述制造装置通过将一个以上的半导体芯片接合于基板从而制造半导体装置。所述制造装置中，通常设有吸引保持半导体芯片并接合于基板或其他半导体芯片上的接合工具。在接合工具，设有利用加热机构进行加热的加热部、及对所述加热部自如地装卸的附件(attachment)。半导体芯片经由附件而吸附保持，附件根据所操作的半导体芯片的尺寸等而适当更换。在接合半导体芯片时，接合工具将接合对象的半导体芯片一边加压一边加热。
现有技术文献
专利文献
专利文献1：日本专利特开2004-29576号公报
发明内容
发明所要解决的问题
此处，在接合半导体芯片时，要求加热对象物(例如半导体芯片等)的温度分布成为目标那样的分布。例如，在倒装芯片接合器(flip chip bonder)中，使形成于半导体芯片的底面的多个凸块热熔融，与形成于基板或其他半导体芯片的表面的电极接合。此时，若半导体芯片的温度分布不均匀，则凸块的熔融状态视部位而不同，导致接合不良、或半导体芯片与基板(或其他半导体芯片)之间的间隙量变得不均匀等问题。因此，倒装芯片接合器中，要求作为加热对象物的半导体芯片的温度分布变得均等。另外，视接合或加热对象物的种类不同，也存在欲将加热对象物的周缘部设为较中心部更高温的情形、或欲将加热对象物的中心部设为较周缘部更高温的情形。
然而，尽管加热对象物(例如半导体芯片)侧的吸热速率视部位而不同，但现有的接合工具中仅设有一个加热系统。另一方面，通常加热对象物的吸热速率在周缘附近高于中心部。因此，越接近周缘，经接合工具进行加热时的加热对象物的温度越容易降低。即，现有技术中，难以将加热对象物的温度分布设为目标那样的分布。
再者，在专利文献1中公开有下述技术：在显示面板的连接用的周缘部配置异向性导电膜，并利用暂时压接用加热工具一边加热一边按压，由此将异向性导电膜贴附于周缘部。所述专利文献1中，为了防止异向性导电膜的两端部的暂时压接不良，而将暂时压接用加热工具分割为对异向性导电膜的中间部分进行按压的主加热工具、与对异向性导电膜的两端部进行按压的端部加热工具，以异向性导电膜的两端部相较于中间部分而成为更高温的方式，来控制主加热工具及端部加热工具的温度。所述专利文献1的技术仅为与异向性导电膜的压接有关的技术，无法适用于半导体芯片的接合。
因此，本说明书公开一种可控制接合时的加热对象物的温度分布的、半导体装置的制造装置及制造方法。
解决问题的技术手段
本说明书所公开的半导体装置的制造装置包括：平台，载置基板；接合头，与所述平台相向配置，将半导体芯片接合于所述基板；以及控制器，所述接合头包含：附件，吸引保持所述半导体芯片；以及加热部，装卸自如地保持所述附件，并对所述附件进行加热，且具有第一加热区域、及在水平方向包围所述第一加热区域的第二加热区域，所述控制器独立地控制所述第一加热区域与第二加热区域的温度。
在所述情形时，所述控制器也能以在执行接合时所述半导体芯片的面内温度分布变得均匀的方式，控制所述第一加热区域与第二加热区域的放热量。
另外，所述接合头也可还分别具有对所述第一加热区域及所述第二加热区域的温度进行检测的温度传感器，所述控制器预先分别存储所述第一加热区域及所述第二加热区域的区域目标温度，根据所述存储的区域目标温度、与所述温度传感器中的区域检测温度的差量，来控制所述第一加热区域与第二加热区域的放热量。
另外，所述接合头也可还具有：冷却路径，与所述第一加热区域、所述第二加热区域对应地设置并且相互独立，且通过流动冷媒从而将对应的所述第一加热区域及所述第二加热区域冷却，所述控制器根据所述存储的区域目标温度、与所述温度传感器中的区域检测温度的差量，来控制所述放热量及所述冷媒的流量。
另外，所述控制器也能以在接合所述半导体芯片之前，执行获取所述区域目标温度的目标获取处理的方式构成，在所述目标获取处理中，所述控制器利用所述接合头使样本芯片接合，并且获取此时的所述样本芯片的温度分布与所述第一加热区域及所述第二加热区域各自的区域检测温度，基于所得的芯片的温度分布及区域检测温度来算出所述第一加热区域及所述第二加热区域的区域目标温度。
另外，所述第一加热区域的所述区域目标温度也可低于所述第二加热区域的所述区域目标温度。
另外，本说明书所公开的半导体装置的制造方法包括：在平台载置基板的步骤：以及将相对于所述平台而可移动的接合头驱动，将半导体芯片接合于所述基板的步骤，所述接合头具有：附件，吸引保持所述半导体芯片；以及加热部，装卸自如地保持所述附件，并对所述附件进行加热，且具有第一加热区域、及在水平方向包围所述第一加热区域的第二加热区域，在执行所述接合时，控制器独立地控制所述第一加热区域与第二加热区域的温度。
发明的效果
根据本说明书所公开的半导体装置的制造装置及制造方法，接合头的加热部被分割为第一加热区域与第二加热区域，进而，控制器独立地控制第一加热区域与第二加热区域的温度，因而可控制接合时的加热对象物的温度分布。
附图说明
图1为表示制造装置的结构的示意图。
图2为半导体芯片及基板的示意图。
图3为表示半导体芯片的温度分布的一例的图表。
图4为表示接合头的结构的示意图。
图5为接合头的加热部的概略平面图。
图6为表示接合半导体芯片时的区域检测温度的经时变化的图表。
图7为表示目标获取处理的流程的流程图。
图8为表示现有的接合头的结构的示意图。
[符号的说明]
10：制造装置
12：拾取单元
14：接合头
16：平台
18：控制器
20：上推销
22：拾取头
26：第一照相机
29：基部
30：隔热部
31：加热部
32a：第一加热区域
32b：第二加热区域
33：附件
33a：基体
33b：岛部
34：温度传感器
36：放热电阻体
38：驱动器
42：冷却通路
44：冷媒供给源
46：阀
100：基板
102：基板电极
110：半导体芯片
116：凸块
120：切割带
具体实施方式
以下，参照附图对半导体装置的制造装置10的结构进行说明。图1为表示制造装置10的结构的示意图。所述制造装置10通过将多个半导体芯片110接合于基板100从而制造半导体装置。
制造装置10具有拾取单元(pick-up unit)12、接合头14、平台16及控制器18。拾取单元12具有：上推销20，将载置于切割带(dicing tape)120的半导体芯片110上推；以及拾取头22，以其底面保持经上推的半导体芯片110。拾取头22以沿水平方向延伸的旋转轴O为中心而可旋转。拾取头22可通过旋转180度，从而使所拾取的半导体芯片110在厚度方向反转180度。由此，半导体芯片110中接着于切割带120的面朝向上方。
接合头14通过未图示的XY驱动机构而在与平台16的上表面平行的水平方向移动，通过未图示的Z轴驱动机构而在与水平方向正交的铅垂方向移动。在所述接合头14，设有吸附保持半导体芯片110的附件(图1中未图示)、及对所述附件进行加热的加热器(图1中未图示)。另外，附件根据半导体芯片110的种类而选择。关于所述接合头14的具体结构，将于后述。
另外，在接合头14，进而也设有第一照相机26。第一照相机26以光轴向下方延伸的姿势安装于接合头14，对载置于平台16的基板100等进行摄像。控制器18基于所述第一照相机26所拍摄的图像等而算出接合头14与基板100的相对位置关系，并基于其算出结果将接合头14定位。平台16真空吸附并支撑由未图示的搬送机构所搬送的基板100。在所述平台16，内置有加热器(未图示)，可将所载置的基板100加热。
控制器18对制造装置10的各部的驱动进行控制，例如具有执行各种运算的处理器、以及存储各种程序及数据的存储器。所述控制器18驱动拾取单元12及接合头14，使多个半导体芯片110接合于基板100上。在所述接合时，控制器18为了适当加热半导体芯片110，而控制设于接合头14及平台16的加热器的温度，关于这一情况将于后述。
继而，对由制造装置10所操作的半导体芯片110进行简单说明。图2为半导体芯片110及基板100的示意图。在半导体芯片110的底面，形成有被称为凸块116的金属突起。凸块116包含导电性金属，以既定的熔融温度熔融。在基板100中与所述凸块116对应的位置，形成有基板电极102。在制造半导体装置时，使所述凸块116熔融而与基板电极102接合。
在半导体芯片110的底面，以覆盖凸块116的方式贴附有非导电性膜(non-conductive film，以下称为“NCF”)118。NCF 118作为将半导体芯片110与基板100或其他半导体芯片110接着的接着剂发挥功能，包含非导电性的热硬化性树脂，例如聚酰亚胺树脂、环氧树脂、丙烯酸树脂、苯氧基树脂、聚醚砜树脂等。所述NCF 118的厚度大于凸块116的平均高度，凸块116由所述NCF 118几乎完全覆盖。NCF 118在常温下为固体的膜，但若超过既定的软化开始温度，则逐渐可逆地软化而发挥流动性，若超过既定的硬化开始温度，则不可逆地开始硬化。再者，软化开始温度低于NCF 118的硬化开始温度及凸块116的熔融温度。
在将半导体芯片110接合于基板100时，执行暂时压接步骤及正式压接步骤。暂时压接步骤中，在暂时压接用温度将载置于基板100的半导体芯片110一边加热一边加压。所述暂时压接用温度高于NCF 118的软化开始温度，低于凸块116的熔融温度及NCF 118的硬化开始温度。通过加热至暂时压接用温度，从而NCF 118软化而具有流动性。而且，由此NCF118可流入半导体芯片110与基板100的间隙，可靠地填埋所述间隙。
正式压接步骤中，在正式压接用温度将经暂时压接的半导体芯片110一边加热一边加压。所述正式压接用温度高于凸块116的熔融温度及NCF 118的硬化开始温度。通过加热至正式压接用温度，从而凸块116熔融而焊接于相向的基板电极102。另外，通过所述加热，NCF 118以填埋半导体芯片110与基板100的间隙的状态硬化，因而将半导体芯片110与基板100牢固地固定。
在暂时压接步骤、正式压接步骤中，均期望将半导体芯片110均匀加热。即，在暂时压接步骤中，要求半导体芯片110在其中心与端部均成为暂时压接用温度。同样地，在正式压接步骤中，要求半导体芯片110在其中心与端部均成为正式压接用温度。然而，在现有的接合头14中仅设有一个加热系统，故而难以使半导体芯片110的温度分布均匀。
参照图8对这一情况进行说明。图8为表示现有的接合头14的结构的示意图。在接合头14，自上侧起依序排列设有基部29、隔热部30、加热部31、附件33。基部29安装于未图示的移动机构，例如由不锈钢等构成。加热部31是内置放热电阻体36的部位。加热部31为平板形，由氮化铝等陶瓷构成。在所述加热部31的内部，嵌埋有放热电阻体36。放热电阻体36例如由铂或钨等构成，电性连接于具有电源的驱动器38。通过对所述放热电阻体36施加电流，从而放热电阻体36放热，将加热部31总体加热。隔热部30是以不使加热部31的热传至基部29的方式设定，例如由阿德色拉姆(Adceram，注册商标)等陶瓷构成。
在加热部31的下侧安装有附件33。附件33具有矩形板状的基体33a、及自所述基体33a的底面突出的岛部(island)33b。基体33a具有与加热部31大致相同的外形。岛部33b小于基体33a，为与半导体芯片110大致相同尺寸的四方形状。所述附件33相对于加热部31装卸自如，且根据所操作的半导体芯片110的种类而适当更换。再者，在图8虽未图示，但在所述附件33形成有沿厚度方向贯穿而与吸引泵连通的吸引孔。另外，在加热部31或隔热部30、基部29，形成有将所述吸引孔与吸引泵连通的连通通路。半导体芯片110经由所述吸引孔而吸附保持于附件33。
另外，在加热部31的上侧，形成有流动冷媒的冷却通路42。所述冷却通路42与冷媒供给源44连通，在冷却通路42的中途设有阀46。控制器18通过控制阀46的打开量，从而控制冷媒的流量。通过冷媒在冷却通路42中流动，从而将加热部31及安装于所述加热部31的附件33冷却。
此处，现有的接合头14中，也可通过将放热电阻体36均等地分散配置于加热部31，从而使加热部31的温度分布以某种程度均匀。然而，作为加热对象的半导体芯片110的吸热速率随着接近所述半导体芯片110的外侧而变高。因此，现有技术中，即便将加热部31的温度分布设定得均匀，作为加热对象的半导体芯片110的温度也容易随着接近外侧而降低。
图3为表示半导体芯片110的温度分布的一例的图表。图3中，横轴表示半导体芯片110内的位置，纵轴表示半导体芯片110的温度(以下简称为“芯片温度”)。另外，图3中，“Cc”表示半导体芯片110的中心位置，“Co”表示半导体芯片110的端部位置。
在利用仅具有一个加热系统的接合头14对半导体芯片110进行加热的情形时，芯片温度如图3的实线所示，随着接近端部而降低。换言之，现有的接合头14中，半导体芯片110的温度分布容易产生不均一。在如此般半导体芯片110的温度分布不均匀的情形时，凸块116的熔融状态或NCF 118的软化或硬化状态视部位而不同，导致半导体芯片110的接合不良、或半导体芯片110与基板100(或其他半导体芯片110)之间的间隙量变得不均匀等问题。
因此，本说明书中，为了使芯片温度的分布均匀，而将加热部31在水平方向分割为多个加热区域，并且将各加热区域电性连接于互不相同的驱动器。参照图4、图5对这一情况进行说明。
图4为表示搭载于制造装置10的接合头14的结构的示意图。另外，图5为所述接合头14的加热部31的概略平面图。所述接合头14与现有的接合头14同样地，自上侧起依序排列配置有基部29、隔热部30、加热部31及附件33。其中，基部29、隔热部30、附件33的结构与现有的接合头14大致相同。
另一方面，本例的加热部31在分割为第一加热区域32a及第二加热区域32b的方面，与现有技术不同。加以具体说明，本例的加热部31分割为大致矩形的第一加热区域32a、与包围所述第一加热区域32a的外周围的方环形状的第二加热区域32b。在第一加热区域32a嵌埋有第一放热电阻体36a，在第二加热区域32b嵌埋有第二放热电阻体36b。进而，在第一加热区域32a安装有对所述第一加热区域32a的温度进行检测的第一温度传感器34a，在第二加热区域32b安装有对所述第二加热区域32b的温度进行检测的第二温度传感器34b。
此处，也可将与一个加热区域对应的温度传感器34a、温度传感器34b设于远离与邻接的另一加热区域的边界的位置。例如，也可为第一温度传感器34a安装于第一加热区域32a的中央附近，第二温度传感器34b安装于第二加热区域32b的外侧端部附近。通过设为所述结构，各温度传感器34a、34b不易受到邻接的另一加热区域的温度的影响。
第一放热电阻体36a及第二放热电阻体36b分别由第一驱动器38a及第二驱动器38b通电。第一驱动器38a具有用以将所需的电流施加于第一放热电阻体36a的电源电路。在所述第一驱动器38a，输入有第一温度传感器34a中的检测温度(以下称为“第一区域检测温度Ta1”)、及存储于控制器18的第一区域目标温度Ta1*。第一驱动器38a根据第一区域检测温度Ta1与第一区域目标温度Ta1*的差量，来控制对第一放热电阻体36a施加的电流值。
第二驱动器38b具有用以将所需的电流施加于第二放热电阻体36b的电源电路。在所述第二驱动器38b，输入有第二温度传感器34b的检测温度(以下称为“第二区域检测温度Ta2”)、及存储于控制器18的第二区域目标温度Ta2*。第二驱动器38b根据第二区域检测温度Ta2与第二区域目标温度Ta2*的差量，来控制对第二放热电阻体36b施加的电流值。
再者，图4、图5中，为了明确两个加热区域32a、32b的边界，在两个加热区域32a、32b之间图示间隙。然而，实际上两个加热区域32a、32b之间也可并无间隙。另外，第一加热区域32a与第二加热区域32b无须在机械上分离，嵌埋有第一放热电阻体36a的第一加热区域32a、与嵌埋有第二放热电阻体36b的第二加热区域32b也可无缝相连。即，加热部31也可由单一的陶瓷构成。通过如此般以单一的陶瓷来构成加热部31，从而容易确保加热部31的平坦度等，可将半导体芯片110更均等地加压。
另外，本例中，不仅加热系统设有多个，而且冷却系统也设有多个。即，在加热部31的上侧，设有与第一加热区域32a及第二加热区域32b分别对应设置的第一冷却通路42a及第二冷却通路42b。各冷却通路42a、42b与冷媒供给源44连通，通过控制设于所述冷却通路42a、冷却通路42b的中途的阀46a、阀46b的开闭量，从而可变更在各冷却通路42a、42b中流动的冷媒流量。所述阀46a、阀46b的开闭量由控制器18控制。换言之，控制器18可相互独立地控制两个冷却通路42a、42b各自的冷媒的流动。通过在各冷却通路42a、42b中流动冷媒，从而将对应的加热区域32a、加热区域32b冷却。
此处，如由到此为止的说明所表明，本例中，可独立地控制第一加热区域32a及第二加热区域32b各自的加热温度。控制器18在接合半导体芯片110时，以所述半导体芯片110的温度分布变得均匀的方式控制两个加热区域32a、32b的温度。具体而言，控制器18将可使半导体芯片110的温度分布均匀的区域目标温度Ta1*、区域目标温度Ta2*输入至第一驱动器38a、第二驱动器38b。更具体而言，控制器18将较位于内侧的第一加热区域32a的区域目标温度Ta1*更高温的值作为位于外侧的第二加热区域32b的区域目标温度Ta2*而输入至第二驱动器38b。
图6为表示接合半导体芯片110时的区域检测温度Ta1、区域检测温度Ta2的经时变化的图表。图6中，横轴表示时间，纵轴表示区域检测温度。另外，图6中，粗线表示第一区域检测温度Ta1，细线表示第二区域检测温度Ta2。如图6所示，本例中，第一区域检测温度Ta1成为第一区域目标温度Ta1*，第二区域检测温度Ta2高于第一区域目标温度Ta1*。以成为第二区域目标温度Ta2*的方式控制两个放热电阻体36a、放热电阻体36b的驱动。
再者，仅进行放热电阻体36a、放热电阻体36b的通电控制的情况下，有时难以进行微妙的温度控制。在所述情形时，也可在放热电阻体36a、放热电阻体36b的通电的同时，进行对冷却通路42a、冷却通路42b的冷媒供给。例如，在第二区域检测温度Ta2的升温速率高于目标的情形时，控制器18也可使设于第二冷却通路42b的阀46b的开度增加，使第二冷却通路42b中流动的冷媒流量暂时增加。如此，通过同时进行放热电阻体36a、放热电阻体36b的通电控制与冷媒流量的控制，从而可将各加热区域32a、32b更高精度地加热。
总之，通过位于外侧的第二加热区域32b较位于内侧的第一加热区域32a成为更高温，从而可使吸热速率高的半导体芯片110的端部附近的温度也与中央附近同样地上升。另外，作为其结果，根据本例，可使半导体芯片110的温度分布接近均匀。
控制器18为了将半导体芯片110均等地加热，而将第一区域目标温度Ta1*及第二区域目标温度Ta2*预先存储于存储器。所述区域目标温度Ta1*、区域目标温度Ta2*是针对每个步骤而准备。即，控制器18存储暂时压接步骤中所用的区域目标温度Ta1*、区域目标温度Ta2*以及正式压接步骤中所用的区域目标温度Ta1*、区域目标温度Ta2*。
另外，半导体芯片110的吸热速率的分布视半导体芯片110的种类而不同，因而可将半导体芯片110均匀加热的区域目标温度Ta1*、区域目标温度Ta2*视半导体芯片110的种类而不同。因此，区域目标温度Ta1*、区域目标温度Ta2*也是针对所操作的半导体芯片110的每个种类而准备。
控制器18为了获取此种区域目标温度Ta1*、区域目标温度Ta2*，也可在制造半导体装置之前，执行获取区域目标温度的目标获取处理。图7为表示目标获取处理的流程的流程图。
目标获取处理中，首先对样本芯片安装内侧温度传感器及外侧温度传感器(S10)。此处，样本芯片为与实际的半导体装置的制造中所用的半导体芯片110相同种类的半导体芯片110。内侧温度传感器安装于所述样本芯片的中央附近，外侧温度传感器安装于样本芯片的端部附近。以下，将内侧温度传感器中的检测温度称为“第一芯片检测温度Tc1”，将外侧温度传感器中的检测温度称为“第二芯片检测温度Tc2”。
控制器18驱动接合头14，使所述样本芯片载置于基板100(S12)。若样本芯片载置于基板100，则随后控制器18使放热电阻体36a、放热电阻体36b进行加热，直至第一区域检测温度Ta1达到第一暂时目标温度Tt1且第二区域检测温度Ta2达到既定的第二暂时目标温度Tt2为止(S14)。此处，第一暂时目标温度Tt1及第二暂时目标温度Tt2可为相同的值，也可不同。
若成为Ta1＝Tt1、Ta2＝Tt2，则控制器18获取所述时间点的第一芯片检测温度Tc1及第二芯片检测温度Tc2(S16)。控制器18算出所获取的芯片检测温度Tc1、芯片检测温度Tc2与半导体芯片110的目标温度Tdef的差量作为第一差量值ΔT1、第二差量值ΔT2(S18)。此处，在获取暂时压接步骤中所用的区域目标温度Ta1*、区域目标温度Ta2*的情形时，目标温度Tdef为暂时压接用温度。另外，在获取正式压接步骤中所用的区域目标温度Ta1*、区域目标温度Ta2*的情形时，目标温度Tdef为正式压接用温度。
继而，控制器18将所述第一差量值的绝对值|ΔT1|及第二差量值的绝对值|ΔT2|与容许误差Δdef进行比较(S20)。在比较的结果为|ΔT1|为容许误差Δdef以下且|ΔT2|为容许误差Δdef以下的情形(S20中为是(Yes)的情形)时，可判断为当前的暂时目标温度Tt1、暂时目标温度Tt2适当。因此，在所述情形时，控制器18将当前的第一暂时目标温度Tt1作为第一区域目标温度Ta1*、第二暂时目标温度Tt2作为第二区域目标温度Ta2*而存储于存储器(S24)。
另一方面，在比较的结果为|ΔT1|超过容许误差Δdef或|ΔT2|超过容许误差Δdef的情形(S20中为否(No)的情形)时，控制器18修正暂时目标温度Tt1、暂时目标温度Tt2(S22)。所述暂时目标温度Tt1、暂时目标温度Tt2的修正方法只要可减少差量值ΔT1、差量值ΔT2，则并无特别限定。因此，例如也可算出下述值作为修正后的暂时目标温度Tt1、暂时目标温度Tt2，即，由当前的暂时目标温度Tt1、暂时目标温度Tt2减去对差量值ΔT1、差量值ΔT2乘以既定的系数K1、系数K2所得的值。即，也可设为Tt1＝Tt1－ΔT1·K1、Tt2＝Tt2－ΔT2·K2。
若可算出暂时目标温度Tt1、暂时目标温度Tt2，则控制器18再次重复步骤S14～步骤S22的处理。另外，最终成为|ΔT1|≦Δdef且|ΔT2|≦Δdef，若执行步骤S24，则区域目标温度的获取处理结束。
再者，到此为止所说明的结构为一例，加热部31只要分割为第一加热区域、与在水平方向包围第一加热区域的第二加热区域，且可独立地对所述第一加热区域、第二加热区域进行温度控制，则其他结构也可变更。例如，到此为止的说明中，将加热部31分割为第一加热区域32a、与包围其周围的第二加热区域32b，但加热部31也可分割为更多数的区域。例如，加热部31也可分割为大致矩形的第一加热区域、包围第一加热区域的口字状的第二加热区域、及包围第二加热区域的口字状的第三加热区域。另外，所述说明中，以加热对象物的温度分布变得均匀的方式，对两个加热区域独立地进行温度控制。但是，加热对象物的温度分布也可根据接合的种类或加热对象物的种类而适当变更。例如，控制器也能以加热对象物的周缘部成为较中心部更高温的方式，来控制第一加热区域、第二加热区域的温度。

Claims (7)

1.一种半导体装置的制造装置，其特征在于，包括：
平台，载置基板；
接合头，与所述平台相向配置，将半导体芯片接合于所述基板；以及
控制器，
所述接合头包含：
附件，吸引保持所述半导体芯片；
加热部，装卸自如地保持所述附件，并对所述附件进行加热，且具有第一加热区域、及在水平方向包围所述第一加热区域的第二加热区域；以及
温度传感器，对所述第一加热区域及所述第二加热区域各自的温度进行检测，
所述控制器预先分别存储所述第一加热区域及所述第二加热区域的区域目标温度，根据存储的所述区域目标温度、与所述温度传感器中的区域检测温度的差量，来独立地控制所述第一加热区域与第二加热区域的放热量，
所述控制器以在接合所述半导体芯片之前，执行获取所述区域目标温度的目标获取处理的方式构成，
所述目标获取处理中，所述控制器利用所述接合头来接合样本芯片，并且获取此时的所述样本芯片的温度分布与所述第一加热区域及所述第二加热区域各自的区域检测温度，基于所得的芯片的温度分布及区域检测温度来算出所述第一加热区域及所述第二加热区域的区域目标温度。
2.根据权利要求1所述的半导体装置的制造装置，其特征在于
所述接合头还具有：冷却路径，与所述第一加热区域、所述第二加热区域对应地设置并且相互独立，通过流动冷媒从而将对应的所述第一加热区域及所述第二加热区域冷却，
所述控制器根据存储的所述区域目标温度、与所述温度传感器中的区域检测温度的差量，来控制所述放热量及所述冷媒的流量。
3.一种半导体装置的制造装置，其特征在于，包括：
平台，载置基板；
接合头，与所述平台相向配置，将半导体芯片接合于所述基板；以及
控制器，
所述接合头包含：
附件，吸引保持所述半导体芯片；
加热部，装卸自如地保持所述附件，并对所述附件进行加热，且对第一加热区域、及在水平方向包围所述第一加热区域的第二加热区域各自独立地加热；
温度传感器，对所述第一加热区域及所述第二加热区域各自的温度进行检测，
所述控制器预先分别存储所述第一加热区域及所述第二加热区域的区域目标温度，
第一冷却路径，通过流动冷媒从而将所述第一加热区域冷却；以及
第二冷却路径，独立于第一冷却路径设置，通过流动冷媒从而将所述第二加热区域冷却，
所述控制器基于所述区域目标温度独立地控制所述第一加热区域及所述第二加热区域的放热量、与流至所述第一冷却路径及所述第二冷却路径的冷媒量。
4.根据权利要求3所述的半导体装置的制造装置，其特征在于
所述控制器根据存储的所述区域目标温度、与所述温度传感器中的区域检测温度的差量，来控制所述第一加热区域与第二加热区域的放热量。
5.根据权利要求1至4中任一项所述的半导体装置的制造装置，其特征在于，
所述控制器以在执行接合时所述半导体芯片的面内温度分布变得均匀的方式，控制所述第一加热区域与第二加热区域的放热量。
6.根据权利要求1至4中任一项所述的半导体装置的制造装置，其特征在于，
所述第一加热区域的所述区域目标温度低于所述第二加热区域的所述区域目标温度。
7.一种半导体装置的制造方法，其特征在于，包括：
在平台载置基板的步骤；
将相对于所述平台而能够移动的接合头驱动，将半导体芯片接合于所述基板的步骤，且
所述接合头具有：
附件，吸引保持所述半导体芯片；
加热部，装卸自如地保持所述附件，并对所述附件进行加热，具有第一加热区域、及在水平方向包围所述第一加热区域的第二加热区域；以及
温度传感器，对所述第一加热区域及所述第二加热区域各自的温度进行检测，
在执行接合时，根据预先存储的所述第一加热区域及所述第二加热区域的区域目标温度、与所述温度传感器中的区域检测温度的差量，来独立地控制所述第一加热区域与第二加热区域的放热量；以及
在接合所述半导体芯片之前，获取所述区域目标温度的目标获取步骤，
所述目标获取步骤中，利用所述接合头来接合样本芯片，并且获取此时的所述样本芯片的温度分布与所述第一加热区域及所述第二加热区域各自的区域检测温度，基于所得的芯片的温度分布及区域检测温度来算出所述第一加热区域及所述第二加热区域的区域目标温度。
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