TWI834007B - 半導體裝置的製造裝置及製造方法 - Google Patents

半導體裝置的製造裝置及製造方法 Download PDF

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Publication number
TWI834007B
TWI834007B TW109137699A TW109137699A TWI834007B TW I834007 B TWI834007 B TW I834007B TW 109137699 A TW109137699 A TW 109137699A TW 109137699 A TW109137699 A TW 109137699A TW I834007 B TWI834007 B TW I834007B
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heating
temperature
area
heating area
semiconductor wafer
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TW109137699A
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TW202135132A (zh
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瀬山耕平
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日商新川股份有限公司
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Abstract

本發明提供一種半導體裝置的製造裝置，可控制接合時的半導體晶片的溫度分佈。半導體裝置的製造裝置10包括：平台16，載置基板100；接合頭14，與所述平台16相向配置，將半導體晶片110接合於所述基板100；以及控制器18，所述接合頭14包含：附件33，吸引保持所述半導體晶片110；以及加熱部31，裝卸自如地保持所述附件33，並對所述附件33進行加熱，且具有第一加熱區域32a、及於水平方向包圍所述第一加熱區域32a的第二加熱區域32b，所述控制器18獨立地控制所述第一加熱區域32a與第二加熱區域32b的溫度。

Description

半導體裝置的製造裝置及製造方法
本說明書揭示一種半導體裝置的製造裝置及製造方法，藉由將一個以上的半導體晶片接合(bonding)於基板從而製造半導體裝置。
先前以來，已知有下述半導體裝置的製造裝置，該製造裝置藉由將一個以上的半導體晶片接合於基板從而製造半導體裝置。該製造裝置中，通常設有吸引保持半導體晶片並接合於基板或其他半導體晶片上的接合工具。於接合工具，設有利用加熱機構進行加熱的加熱部、及對該加熱部自如地裝卸的附件(attachment)。半導體晶片經由附件而吸附保持，附件根據所操作的半導體晶片的尺寸等而適當更換。於接合半導體晶片時，接合工具將接合對象的半導體晶片一邊加壓一邊加熱。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2004-29576號公報
此處，於接合半導體晶片時，要求加熱對象物(例如半導體 晶片等)的溫度分佈成為目標般的分佈。例如，於倒裝晶片接合器(flip chip bonder)中，使形成於半導體晶片的底面的多個凸塊熱熔融，與形成於基板或其他半導體晶片的表面的電極接合。此時，若半導體晶片的溫度分佈不均勻，則凸塊的熔融狀態視部位而不同，導致接合不良、或半導體晶片與基板(或其他半導體晶片)之間的間隙量變得不均勻等問題。因此，倒裝晶片接合器中，要求作為加熱對象物的半導體晶片的溫度分佈變得均等。另外，視接合或加熱對象物的種類不同，亦存在欲將加熱對象物的周緣部設為較中心部更高溫的情形、或欲將加熱對象物的中心部設為較周緣部更高溫的情形。
然而，儘管加熱對象物(例如半導體晶片)側的吸熱速率視部位而不同，但現有的接合工具中僅設有一個加熱系統。另一方面，通常加熱對象物的吸熱速率在周緣附近高於中心部。因此，越接近周緣，經接合工具進行加熱時的加熱對象物的溫度越容易降低。即，先前技術中，難以將加熱對象物的溫度分佈設為目標般的分佈。
再者，於專利文獻1中揭示有下述技術：於顯示面板的連接用的周緣部配置異向性導電膜，並利用暫時壓接用加熱工具一邊加熱一邊按壓，由此將異向性導電膜貼附於周緣部。該專利文獻1中，為了防止異向性導電膜的兩端部的暫時壓接不良，而將暫時壓接用加熱工具分割為對異向性導電膜的中間部分進行按壓的主加熱工具、與對異向性導電膜的兩端部進行按壓的端部加 熱工具，以異向性導電膜的兩端部相較於中間部分而成為更高溫的方式，來控制主加熱工具及端部加熱工具的溫度。該專利文獻1的技術僅為與異向性導電膜的壓接有關的技術，無法適用於半導體晶片的接合。
因此，本說明書揭示一種可控制接合時的加熱對象物的溫度分佈的、半導體裝置的製造裝置及製造方法。
本說明書所揭示的半導體裝置的製造裝置的特徵在於包括：平台，載置基板；接合頭，與所述平台相向配置，將半導體晶片接合於所述基板；以及控制器，所述接合頭包含：附件，吸引保持所述半導體晶片；以及加熱部，裝卸自如地保持所述附件，並對所述附件進行加熱，且具有第一加熱區域、及於水平方向包圍所述第一加熱區域的第二加熱區域，所述控制器獨立地控制所述第一加熱區域與第二加熱區域的溫度。
於該情形時，所述控制器亦能以於執行接合時所述半導體晶片的面內溫度分佈變得均勻的方式，控制所述第一加熱區域與第二加熱區域的放熱量。
另外，所述接合頭亦可更分別具有對所述第一加熱區域及所述第二加熱區域的溫度進行檢測的溫度感測器，所述控制器預先分別記憶所述第一加熱區域及所述第二加熱區域的區域目標溫度，根據所述記憶的區域目標溫度、與所述溫度感測器中的區域檢測溫度的差量，來控制所述第一加熱區域與第二加熱區域的 放熱量。
另外，所述接合頭亦可更具有：冷卻路徑，與所述第一加熱區域、所述第二加熱區域對應地設置並且相互獨立，且通過流動冷媒從而將對應的所述第一加熱區域及所述第二加熱區域冷卻，所述控制器根據所述記憶的區域目標溫度、與所述溫度感測器中的區域檢測溫度的差量，來控制所述放熱量及所述冷媒的流量。
另外，所述控制器亦能以於接合所述半導體晶片之前，執行獲取所述區域目標溫度的目標獲取處理的方式構成，於所述目標獲取處理中，所述控制器利用所述接合頭使樣本晶片接合，並且獲取此時的所述樣本晶片的溫度分佈與所述第一加熱區域及所述第二加熱區域各自的區域檢測溫度，基於所得的晶片的溫度分佈及區域檢測溫度來算出所述第一加熱區域及所述第二加熱區域的區域目標溫度。
另外，所述第一加熱區域的所述區域目標溫度亦可低於所述第二加熱區域的所述區域目標溫度。
另外，本說明書所揭示的半導體裝置的製造方法的特徵在於包括：於平台載置基板的步驟：以及將相對於所述平台而可移動的接合頭驅動，將半導體晶片接合於所述基板的步驟，所述接合頭具有：附件，吸引保持所述半導體晶片；以及加熱部，裝卸自如地保持所述附件，並對所述附件進行加熱，且具有第一加熱區域、及於水平方向包圍所述第一加熱區域的第二加熱區域， 於執行所述接合時，控制器獨立地控制所述第一加熱區域與第二加熱區域的溫度。
根據本說明書所揭示的半導體裝置的製造裝置及製造方法，接合頭的加熱部被分割為第一加熱區域與第二加熱區域，進而，控制器獨立地控制第一加熱區域與第二加熱區域的溫度，因而可控制接合時的加熱對象物的溫度分佈。
10:製造裝置
12:拾取單元
14:接合頭
16:平台
18:控制器
20:上推銷
22:拾取頭
26:第一相機
29:基部
30:隔熱部
31:加熱部
32a:第一加熱區域
32b:第二加熱區域
33:附件
33a:基體
33b:島部
34:溫度感測器
34a:第一溫度感測器
34b:第二溫度感測器
36:放熱電阻體
36a:第一放熱電阻體
36b:第二放熱電阻體
38:驅動器
38a:第一驅動器
38b:第二驅動器
42:冷卻通路
42a:第一冷卻通路
42b:第二冷卻通路
44:冷媒供給源
46、46a、46b:閥
100:基板
102:基板電極
110:半導體晶片
116:凸塊
118:非導電性膜(NCF)
120:切割帶
Cc:中心位置
Co:端部位置
O:旋轉軸
S10~S24:步驟
Ta1:第一區域檢測溫度
Ta1*:第一區域目標溫度
Ta2:第二區域檢測溫度
Ta2*:第二區域目標溫度
圖1為表示製造裝置的結構的示意圖。
圖2為半導體晶片及基板的示意圖。
圖3為表示半導體晶片的溫度分佈的一例的圖表。
圖4為表示接合頭的結構的示意圖。
圖5為接合頭的加熱部的概略平面圖。
圖6為表示接合半導體晶片時的區域檢測溫度的經時變化的圖表。
圖7為表示目標獲取處理的流程的流程圖。
圖8為表示現有的接合頭的結構的示意圖。
以下，參照圖式對半導體裝置的製造裝置10的結構進行說明。圖1為表示製造裝置10的結構的示意圖。所述製造裝置10藉由將多個半導體晶片110接合於基板100從而製造半導體裝 置。
製造裝置10具有拾取單元(pick-up unit)12、接合頭14、平台16及控制器18。拾取單元12具有：上推銷20，將載置於切割帶(dicing tape)120的半導體晶片110上推；以及拾取頭22，以其底面保持經上推的半導體晶片110。拾取頭22以沿水平方向延伸的旋轉軸O為中心而可旋轉。拾取頭22可通過旋轉180度，從而使所拾取的半導體晶片110於厚度方向反轉180度。由此，半導體晶片110中接著於切割帶120的面朝向上方。
接合頭14藉由未圖示的XY驅動機構而於與平台16的上表面平行的水平方向移動，藉由未圖示的Z軸驅動機構而於與水平方向正交的鉛垂方向移動。於該接合頭14，設有吸附保持半導體晶片110的附件(圖1中未圖示)、及對該附件進行加熱的加熱器(圖1中未圖示)。另外，附件根據半導體晶片110的種類而選擇。關於所述接合頭14的具體結構，將於後述。
另外，於接合頭14，進而亦設有第一相機26。第一相機26以光軸向下方延伸的姿勢安裝於接合頭14，對載置於平台16的基板100等進行攝像。控制器18基於該第一相機26所拍攝的圖像等而算出接合頭14與基板100的相對位置關係，並基於其算出結果將接合頭14定位。平台16真空吸附並支持由未圖示的搬送機構所搬送的基板100。於該平台16，內置有加熱器(未圖示)，可將所載置的基板100加熱。
控制器18對製造裝置10的各部的驅動進行控制，例如 具有執行各種運算的處理器、以及記憶各種程式及資料的記憶體。所述控制器18驅動拾取單元12及接合頭14，使多個半導體晶片110接合於基板100上。於該接合時，控制器18為了適當加熱半導體晶片110，而控制設於接合頭14及平台16的加熱器的溫度，關於這一情況將於後述。
繼而，對由製造裝置10所操作的半導體晶片110進行簡單說明。圖2為半導體晶片110及基板100的示意圖。於半導體晶片110的底面，形成有被稱為凸塊116的金屬突起。凸塊116包含導電性金屬，以既定的熔融溫度熔融。於基板100中與該凸塊116對應的位置，形成有基板電極102。於製造半導體裝置時，使該凸塊116熔融而與基板電極102接合。
於半導體晶片110的底面，以覆蓋凸塊116的方式貼附有非導電性膜(non-conductive film，以下稱為「NCF」)118。NCF 118作為將半導體晶片110與基板100或其他半導體晶片110接著的接著劑發揮功能，包含非導電性的熱硬化性樹脂，例如聚醯亞胺樹脂、環氧樹脂、丙烯酸樹脂、苯氧基樹脂、聚醚碸樹脂等。該NCF 118的厚度大於凸塊116的平均高度，凸塊116由該NCF 118幾乎完全覆蓋。NCF 118於常溫下為固體的膜，但若超過既定的軟化開始溫度，則逐漸可逆地軟化而發揮流動性，若超過既定的硬化開始溫度，則不可逆地開始硬化。再者，軟化開始溫度低於NCF 118的硬化開始溫度及凸塊116的熔融溫度。
於將半導體晶片110接合於基板100時，執行暫時壓接 步驟及正式壓接步驟。暫時壓接步驟中，於暫時壓接用溫度將載置於基板100的半導體晶片110一邊加熱一邊加壓。所述暫時壓接用溫度高於NCF 118的軟化開始溫度，低於凸塊116的熔融溫度及NCF 118的硬化開始溫度。藉由加熱至暫時壓接用溫度，從而NCF 118軟化而具有流動性。而且，藉此NCF 118可流入半導體晶片110與基板100的間隙，可靠地填埋該間隙。
正式壓接步驟中，於正式壓接用溫度將經暫時壓接的半導體晶片110一邊加熱一邊加壓。所述正式壓接用溫度高於凸塊116的熔融溫度及NCF 118的硬化開始溫度。藉由加熱至正式壓接用溫度，從而凸塊116熔融而焊接於相向的基板電極102。另外，藉由該加熱，NCF 118以填埋半導體晶片110與基板100的間隙的狀態硬化，因而將半導體晶片110與基板100牢固地固定。
於暫時壓接步驟、正式壓接步驟中，均期望將半導體晶片110均勻加熱。即，於暫時壓接步驟中，要求半導體晶片110於其中心與端部均成為暫時壓接用溫度。同樣地，於正式壓接步驟中，要求半導體晶片110於其中心與端部均成為正式壓接用溫度。然而，於現有的接合頭14中僅設有一個加熱系統，故而難以使半導體晶片110的溫度分佈均勻。
參照圖8對這一情況進行說明。圖8為表示現有的接合頭14的結構的示意圖。於接合頭14，自上側起依序排列設有基部29、隔熱部30、加熱部31、附件33。基部29安裝於未圖示的移動機構，例如由不鏽鋼等構成。加熱部31是內置放熱電阻體36 的部位。加熱部31為平板形，由氮化鋁等陶瓷構成。於該加熱部31的內部，嵌埋有放熱電阻體36。放熱電阻體36例如由鉑或鎢等構成，電性連接於具有電源的驅動器38。藉由對所述放熱電阻體36施加電流，從而放熱電阻體36放熱，將加熱部31總體加熱。隔熱部30是以不使加熱部31的熱傳至基部29的方式設定，例如由阿德色拉姆(Adceram，註冊商標)等陶瓷構成。
於加熱部31的下側安裝有附件33。附件33具有矩形板狀的基體33a、及自該基體33a的底面突出的島部(island)33b。基體33a具有與加熱部31大致相同的外形。島部33b小於基體33a，為與半導體晶片110大致相同尺寸的四方形狀。該附件33相對於加熱部31裝卸自如，且根據所操作的半導體晶片110的種類而適當更換。再者，於圖8雖未圖示，但在所述附件33形成有沿厚度方向貫穿而與吸引泵連通的吸引孔。另外，於加熱部31或隔熱部30、基部29，形成有將所述吸引孔與吸引泵連通的連通通路。半導體晶片110經由所述吸引孔而吸附保持於附件33。
另外，於加熱部31的上側，形成有流動冷媒的冷卻通路42。該冷卻通路42與冷媒供給源44連通，於冷卻通路42的中途設有閥46。控制器18藉由控制閥46的打開量，從而控制冷媒的流量。藉由冷媒於冷卻通路42中流動，從而將加熱部31及安裝於該加熱部31的附件33冷卻。
此處，現有的接合頭14中，亦可藉由將放熱電阻體36均等地分散配置於加熱部31，從而使加熱部31的溫度分佈以某種 程度均勻。然而，作為加熱對象的半導體晶片110的吸熱速率隨著接近該半導體晶片110的外側而變高。因此，先前技術中，即便將加熱部31的溫度分佈設定得均勻，作為加熱對象的半導體晶片110的溫度亦容易隨著接近外側而降低。
圖3為表示半導體晶片110的溫度分佈的一例的圖表。圖3中，橫軸表示半導體晶片110內的位置，縱軸表示半導體晶片110的溫度(以下簡稱為「晶片溫度」)。另外，圖3中，「Cc」表示半導體晶片110的中心位置，「Co」表示半導體晶片110的端部位置。
於利用僅具有一個加熱系統的接合頭14對半導體晶片110進行加熱的情形時，晶片溫度如圖3的實線所示，隨著接近端部而降低。換言之，現有的接合頭14中，半導體晶片110的溫度分佈容易產生不均一。於如此般半導體晶片110的溫度分佈不均勻的情形時，凸塊116的熔融狀態或NCF 118的軟化或硬化狀態視部位而不同，導致半導體晶片110的接合不良、或半導體晶片110與基板100(或其他半導體晶片110)之間的間隙量變得不均勻等問題。
因此，本說明書中，為了使晶片溫度的分佈均勻，而將加熱部31於水平方向分割為多個加熱區域，並且將各加熱區域電性連接於互不相同的驅動器。參照圖4、圖5對這一情況進行說明。
圖4為表示搭載於製造裝置10的接合頭14的結構的示意圖。另外，圖5為所述接合頭14的加熱部31的概略平面圖。 所述接合頭14與現有的接合頭14同樣地，自上側起依序排列配置有基部29、隔熱部30、加熱部31及附件33。其中，基部29、隔熱部30、附件33的結構與現有的接合頭14大致相同。
另一方面，本例的加熱部31於分割為第一加熱區域32a及第二加熱區域32b的方面，與先前技術不同。加以具體說明，本例的加熱部31分割為大致矩形的第一加熱區域32a、與包圍該第一加熱區域32a的外周圍的方環形狀的第二加熱區域32b。於第一加熱區域32a嵌埋有第一放熱電阻體36a，於第二加熱區域32b嵌埋有第二放熱電阻體36b。進而，於第一加熱區域32a安裝有對該第一加熱區域32a的溫度進行檢測的第一溫度感測器34a，於第二加熱區域32b安裝有對該第二加熱區域32b的溫度進行檢測的第二溫度感測器34b。
此處，亦可將與一個加熱區域對應的溫度感測器34a、溫度感測器34b設於遠離與鄰接的另一加熱區域的邊界的位置。例如，亦可為第一溫度感測器34a安裝於第一加熱區域32a的中央附近，第二溫度感測器34b安裝於第二加熱區域32b的外側端部附近。藉由設為該結構，各溫度感測器34a、34b不易受到鄰接的另一加熱區域的溫度的影響。
第一放熱電阻體36a及第二放熱電阻體36b分別由第一驅動器38a及第二驅動器38b通電。第一驅動器38a具有用以將所需的電流施加於第一放熱電阻體36a的電源電路。於該第一驅動器38a，輸入有第一溫度感測器34a中的檢測溫度(以下稱為「第 一區域檢測溫度Ta1」)、及記憶於控制器18的第一區域目標溫度Ta1*。第一驅動器38a根據第一區域檢測溫度Ta1與第一區域目標溫度Ta1*的差量，來控制對第一放熱電阻體36a施加的電流值。
第二驅動器38b具有用以將所需的電流施加於第二放熱電阻體36b的電源電路。於該第二驅動器38b，輸入有第二溫度感測器34b的檢測溫度(以下稱為「第二區域檢測溫度Ta2」)、及記憶於控制器18的第二區域目標溫度Ta2*。第二驅動器38b根據第二區域檢測溫度Ta2與第二區域目標溫度Ta2*的差量，來控制對第二放熱電阻體36b施加的電流值。
再者，圖4、圖5中，為了明確兩個加熱區域32a、32b的邊界，於兩個加熱區域32a、32b之間圖示間隙。然而，實際上兩個加熱區域32a、32b之間亦可並無間隙。另外，第一加熱區域32a與第二加熱區域32b無須於機械上分離，嵌埋有第一放熱電阻體36a的第一加熱區域32a、與嵌埋有第二放熱電阻體36b的第二加熱區域32b亦可無縫相連。即，加熱部31亦可由單一的陶瓷構成。藉由如此般以單一的陶瓷來構成加熱部31，從而容易確保加熱部31的平坦度等，可將半導體晶片110更均等地加壓。
另外，本例中，不僅加熱系統設有多個，而且冷卻系統亦設有多個。即，於加熱部31的上側，設有與第一加熱區域32a及第二加熱區域32b分別對應設置的第一冷卻通路42a及第二冷卻通路42b。各冷卻通路42a、42b與冷媒供給源44連通，藉由控制設於該冷卻通路42a、冷卻通路42b的中途的閥46a、閥46b的 開閉量，從而可變更於各冷卻通路42a、42b中流動的冷媒流量。所述閥46a、閥46b的開閉量由控制器18控制。換言之，控制器18可相互獨立地控制兩個冷卻通路42a、42b各自的冷媒的流動。藉由在各冷卻通路42a、42b中流動冷媒，從而將對應的加熱區域32a、加熱區域32b冷卻。
此處，如由到此為止的說明所表明，本例中，可獨立地控制第一加熱區域32a及第二加熱區域32b各自的加熱溫度。控制器18於接合半導體晶片110時，以該半導體晶片110的溫度分佈變得均勻的方式控制兩個加熱區域32a、32b的溫度。具體而言，控制器18將可使半導體晶片110的溫度分佈均勻的區域目標溫度Ta1*、區域目標溫度Ta2*輸入至第一驅動器38a、第二驅動器38b。更具體而言，控制器18將較位於內側的第一加熱區域32a的區域目標溫度Ta1*更高溫的值作為位於外側的第二加熱區域32b的區域目標溫度Ta2*而輸入至第二驅動器38b。
圖6為表示接合半導體晶片110時的區域檢測溫度Ta1、區域檢測溫度Ta2的經時變化的圖表。圖6中，橫軸表示時間，縱軸表示區域檢測溫度。另外，圖6中，粗線表示第一區域檢測溫度Ta1，細線表示第二區域檢測溫度Ta2。如圖6所示，本例中，第一區域檢測溫度Ta1成為第一區域目標溫度Ta1*，第二區域檢測溫度Ta2高於第一區域目標溫度Ta1*。以成為第二區域目標溫度Ta2*的方式控制兩個放熱電阻體36a、放熱電阻體36b的驅動。
再者，僅進行放熱電阻體36a、放熱電阻體36b的通電控制的情況下，有時難以進行微妙的溫度控制。於該情形時，亦可於放熱電阻體36a、放熱電阻體36b的通電的同時，進行對冷卻通路42a、冷卻通路42b的冷媒供給。例如，於第二區域檢測溫度Ta2的升溫速率高於目標的情形時，控制器18亦可使設於第二冷卻通路42b的閥46b的開度增加，使第二冷卻通路42b中流動的冷媒流量暫時增加。如此，藉由同時進行放熱電阻體36a、放熱電阻體36b的通電控制與冷媒流量的控制，從而可將各加熱區域32a、32b更高精度地加熱。
總之，藉由位於外側的第二加熱區域32b較位於內側的第一加熱區域32a成為更高溫，從而可使吸熱速率高的半導體晶片110的端部附近的溫度亦與中央附近同樣地上升。另外，作為其結果，根據本例，可使半導體晶片110的溫度分佈接近均勻。
控制器18為了將半導體晶片110均等地加熱，而將第一區域目標溫度Ta1*及第二區域目標溫度Ta2*預先記憶於記憶體。所述區域目標溫度Ta1*、區域目標溫度Ta2*是針對每個步驟而準備。即，控制器18記憶暫時壓接步驟中所用的區域目標溫度Ta1*、區域目標溫度Ta2*以及正式壓接步驟中所用的區域目標溫度Ta1*、區域目標溫度Ta2*。
另外，半導體晶片110的吸熱速率的分佈視半導體晶片110的種類而不同，因而可將半導體晶片110均勻加熱的區域目標溫度Ta1*、區域目標溫度Ta2*視半導體晶片110的種類而不同。 因此，區域目標溫度Ta1*、區域目標溫度Ta2*亦是針對所操作的半導體晶片110的每個種類而準備。
控制器18為了獲取此種區域目標溫度Ta1*、區域目標溫度Ta2*，亦可於製造半導體裝置之前，執行獲取區域目標溫度的目標獲取處理。圖7為表示目標獲取處理的流程的流程圖。
目標獲取處理中，首先對樣本晶片安裝內側溫度感測器及外側溫度感測器(S10)。此處，樣本晶片為與實際的半導體裝置的製造中所用的半導體晶片110相同種類的半導體晶片110。內側溫度感測器安裝於所述樣本晶片的中央附近，外側溫度感測器安裝於樣本晶片的端部附近。以下，將內側溫度感測器中的檢測溫度稱為「第一晶片檢測溫度Tc1」，將外側溫度感測器中的檢測溫度稱為「第二晶片檢測溫度Tc2」。
控制器18驅動接合頭14，使所述樣本晶片載置於基板100(S12)。若樣本晶片載置於基板100，則隨後控制器18使放熱電阻體36a、放熱電阻體36b進行加熱，直至第一區域檢測溫度Ta1達到第一暫時目標溫度Tt1且第二區域檢測溫度Ta2達到既定的第二暫時目標溫度Tt2為止(S14)。此處，第一暫時目標溫度Tt1及第二暫時目標溫度Tt2可為相同的值，亦可不同。
若成為Ta1=Tt1、Ta2=Tt2，則控制器18獲取該時間點的第一晶片檢測溫度Tc1及第二晶片檢測溫度Tc2(S16)。控制器18算出所獲取的晶片檢測溫度Tc1、晶片檢測溫度Tc2與半導體晶片110的目標溫度Tdef的差量作為第一差量值△T1、第二差 量值△T2(S18)。此處，於獲取暫時壓接步驟中所用的區域目標溫度Ta1*、區域目標溫度Ta2*的情形時，目標溫度Tdef為暫時壓接用溫度。另外，於獲取正式壓接步驟中所用的區域目標溫度Ta1*、區域目標溫度Ta2*的情形時，目標溫度Tdef為正式壓接用溫度。
繼而，控制器18將所述第一差量值的絕對值｜△T1｜及第二差量值的絕對值｜△T2｜與容許誤差△def進行比較(S20)。於比較的結果為｜△T1｜為容許誤差△def以下且｜△T2｜為容許誤差△def以下的情形(S20中為是(Yes)的情形)時，可判斷為當前的暫時目標溫度Tt1、暫時目標溫度Tt2適當。因此，於該情形時，控制器18將當前的第一暫時目標溫度Tt1作為第一區域目標溫度Ta1*、第二暫時目標溫度Tt2作為第二區域目標溫度Ta2*而記憶於記憶體(S24)。
另一方面，於比較的結果為｜△T1｜超過容許誤差△def或｜△T2｜超過容許誤差△def的情形(S20中為否(No)的情形)時，控制器18修正暫時目標溫度Tt1、暫時目標溫度Tt2(S22)。所述暫時目標溫度Tt1、暫時目標溫度Tt2的修正方法只要可減少差量值△T1、差量值△T2，則並無特別限定。因此，例如亦可算出下述值作為修正後的暫時目標溫度Tt1、暫時目標溫度Tt2，即，由當前的暫時目標溫度Tt1、暫時目標溫度Tt2減去對差量值△T1、差量值△T2乘以既定的係數K1、係數K2所得的值。即，亦可設為Tt1=Tt1-△T1．K1、Tt2=Tt2-△T2．K2。
若可算出暫時目標溫度Tt1、暫時目標溫度Tt2，則控制器18再次重複步驟S14~步驟S22的處理。另外，最終成為｜△T1｜≦△def且｜△T2｜≦△def，若執行步驟S24，則區域目標溫度的獲取處理結束。
再者，到此為止所說明的結構為一例，加熱部31只要分割為第一加熱區域、與於水平方向包圍第一加熱區域的第二加熱區域，且可獨立地對所述第一加熱區域、第二加熱區域進行溫度控制，則其他結構亦可變更。例如，到此為止的說明中，將加熱部31分割為第一加熱區域32a、與包圍其周圍的第二加熱區域32b，但加熱部31亦可分割為更多數的區域。例如，加熱部31亦可分割為大致矩形的第一加熱區域、包圍第一加熱區域的口字狀的第二加熱區域、及包圍第二加熱區域的口字狀的第三加熱區域。另外，所述說明中，以加熱對象物的溫度分佈變得均勻的方式，對兩個加熱區域獨立地進行溫度控制。但是，加熱對象物的溫度分佈也可根據接合的種類或加熱對象物的種類而適當變更。例如，控制器亦能以加熱對象物的周緣部成為較中心部更高溫的方式，來控制第一加熱區域、第二加熱區域的溫度。
18:控制器
29:基部
30:隔熱部
31:加熱部
33:附件
34a:第一溫度感測器
34b:第二溫度感測器
36a:第一放熱電阻體
36b:第二放熱電阻體
38a:第一驅動器
38b:第二驅動器
42a:第一冷卻通路
42b:第二冷卻通路
44:冷媒供給源
46a、46b:閥
110:半導體晶片

Claims (7)

  1. 一種半導體裝置的製造裝置，其特徵在於包括：平台，載置基板；接合頭，與所述平台相向配置，將半導體晶片接合於所述基板；以及控制器，所述接合頭包含：附件，吸引保持所述半導體晶片；以及加熱部，裝卸自如地保持所述附件，並對所述附件進行加熱，且具有第一加熱區域、及於水平方向包圍所述第一加熱區域的第二加熱區域，溫度感測器，分別對所述第一加熱區域及所述第二加熱區域的溫度進行檢測，所述控制器預先分別記憶所述第一加熱區域及所述第二加熱區域的區域目標溫度，根據記憶的所述區域目標溫度、與所述溫度感測器中的區域檢測溫度的差量，來獨立地控制所述第一加熱區域與第二加熱區域的放熱量，所述控制器以於接合所述半導體晶片之前，執行獲取所述區域目標溫度的目標獲取處理的方式構成，所述目標獲取處理中，所述控制器利用所述接合頭來接合樣本晶片，並且獲取此時的所述樣本晶片的溫度分佈與所述第一加熱區域及所述第二加熱區域各自的區域檢測溫度，基於所得的晶 片的溫度分佈及區域檢測溫度來算出所述第一加熱區域及所述第二加熱區域的區域目標溫度。
  2. 如請求項1所述的半導體裝置的製造裝置，其中所述接合頭更具有：冷卻路徑，與所述第一加熱區域、所述第二加熱區域對應地設置並且相互獨立，藉由流動冷媒從而將對應的所述第一加熱區域及所述第二加熱區域冷卻，所述控制器根據記憶的所述區域目標溫度、與所述溫度感測器中的區域檢測溫度的差量，來控制所述放熱量及所述冷媒的流量。
  3. 一種半導體裝置的製造裝置，其特徵在於包括：平台，載置基板；接合頭，與所述平台相向配置，將半導體晶片接合於所述基板；以及控制器，所述接合頭包含：附件，吸引保持所述半導體晶片；以及加熱部，裝卸自如地保持所述附件，並對所述附件進行加熱，且具有第一加熱區域、及於水平方向包圍所述第一加熱區域的第二加熱區域，第一冷卻路徑，藉由流動冷媒從而將所述第一加熱區域冷卻，第二冷卻路徑，與所述第一冷卻路徑獨立地設置，藉由流動冷媒從而將所述第二加熱區域冷卻， 所述控制器獨立地控制所述第一加熱區域及所述第二加熱區域的放熱量、以及所述第一冷卻路徑及第二冷卻路徑流動的冷媒量。
  4. 如請求項3所述的半導體裝置的製造裝置，其中所述接合頭更分別對所述第一加熱區域及所述第二加熱區域的溫度進行檢測的溫度感測器所述控制器預先分別記憶所述第一加熱區域及所述第二加熱區域的區域目標溫度，根據記憶的所述區域目標溫度、與所述溫度感測器中的區域檢測溫度的差量，來獨立地控制所述第一加熱區域與第二加熱區域的放熱量。
  5. 如請求項1至請求項4中任一項所述的半導體裝置的製造裝置，其中所述控制器以於執行接合時所述半導體晶片的面內溫度分佈變得均勻的方式，控制所述第一加熱區域與第二加熱區域的放熱量。
  6. 如請求項1、請求項2或請求項4所述的半導體裝置的製造裝置，其中所述第一加熱區域的所述區域目標溫度低於所述第二加熱區域的所述區域目標溫度。
  7. 一種半導體裝置的製造方法，其特徵在於包括：於平台載置基板的步驟；以及將相對於所述平台而能夠移動的接合頭驅動，將半導體晶片接合於所述基板的步驟，且所述接合頭具有： 附件，吸引保持所述半導體晶片；以及加熱部，裝卸自如地保持所述附件，並對所述附件進行加熱，具有第一加熱區域、及於水平方向包圍所述第一加熱區域的第二加熱區域，溫度感測器，分別對所述第一加熱區域及所述第二加熱區域的溫度進行檢測，於執行所述接合時，預先記憶的所述第一加熱區域及所述第二加熱區域的區域目標溫度，根據與所述溫度感測器中的區域檢測溫度的差量，來獨立地控制所述第一加熱區域與第二加熱區域的放熱量，接合所述半導體晶片之前，進一步執行獲取所述區域目標溫度的目標獲取步驟，所述目標獲取步驟中，利用所述接合頭來接合樣本晶片，並且獲取此時的所述樣本晶片的溫度分佈與所述第一加熱區域及所述第二加熱區域各自的區域檢測溫度，基於所得的晶片的溫度分佈及區域檢測溫度來算出所述第一加熱區域及所述第二加熱區域的區域目標溫度。
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