JP7209400B2 - 半導体装置の製造装置および製造方法 - Google Patents
半導体装置の製造装置および製造方法 Download PDFInfo
- Publication number
- JP7209400B2 JP7209400B2 JP2021558328A JP2021558328A JP7209400B2 JP 7209400 B2 JP7209400 B2 JP 7209400B2 JP 2021558328 A JP2021558328 A JP 2021558328A JP 2021558328 A JP2021558328 A JP 2021558328A JP 7209400 B2 JP7209400 B2 JP 7209400B2
- Authority
- JP
- Japan
- Prior art keywords
- area
- heating
- heating area
- temperature
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000010438 heat treatment Methods 0.000 claims description 195
- 239000000758 substrate Substances 0.000 claims description 38
- 238000009826 distribution Methods 0.000 claims description 29
- 238000001816 cooling Methods 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000002826 coolant Substances 0.000 claims description 11
- 239000003507 refrigerant Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
- H05K13/0408—Incorporating a pick-up tool
- H05K13/0409—Sucking devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75253—Means for applying energy, e.g. heating means adapted for localised heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/7528—Resistance welding electrodes, i.e. for ohmic heating
- H01L2224/75282—Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75313—Removable bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/7592—Load or pressure adjusting means, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81053—Bonding environment
- H01L2224/81095—Temperature settings
- H01L2224/81099—Ambient temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Description
Claims (7)
- 基板が載置されるステージと、
前記ステージと対向配置され、前記基板に半導体チップをボンディングするボンディングヘッドと、
コントローラと、
を備え、前記ボンディングヘッドは、
前記半導体チップを吸引保持するアタッチメントと、
前記アタッチメントを着脱自在に保持し、前記アタッチメントを加熱する加熱部であって、第一加熱エリアと、前記第一加熱エリアを水平方向に囲む第二加熱エリアと、を有する加熱部と、
前記第一加熱エリア及び前記第二加熱エリアそれぞれの温度を検出する温度センサと、
を含み、
前記コントローラは、前記第一加熱エリア及び前記第二加熱エリアのエリア目標温度を予めそれぞれ記憶しており、前記記憶されたエリア目標温度と、前記温度センサでのエリア検出温度との差分に応じて、前記第一加熱エリアと第二加熱エリアの発熱量を独立して制御し、
前記コントローラは、前記半導体チップのボンディングに先立って、前記エリア目標温度を取得する目標取得処理を実行するように構成され、
前記目標取得処理において、前記コントローラは、サンプルチップを前記ボンディングヘッドでボンディングさせるとともに、その際の前記サンプルチップの温度分布と前記第一加熱エリアおよび前記第二加熱エリアそれぞれのエリア検出温度とを取得し、得られたチップの温度分布およびエリア検出温度に基づいて前記第一加熱エリアおよび前記第二加熱エリアのエリア目標温度を算出する、
ことを特徴とする半導体装置の製造装置。 - 請求項1に記載の半導体装置の製造装置であって、
前記ボンディングヘッドは、さらに、前記第一加熱エリア、前記第二加熱エリアに対応して設けられるとともに互いに独立した冷却経路であって、冷媒が流れることで対応する前記第一加熱エリア及び前記第二加熱エリアを冷却する冷却経路を有しており、
前記コントローラは、前記記憶されたエリア目標温度と、前記温度センサでのエリア検出温度との差分に応じて、前記発熱量及び前記冷媒の流量を制御する、
ことを特徴とする半導体装置の製造装置。 - 基板が載置されるステージと、
前記ステージと対向配置され、前記基板に半導体チップをボンディングするボンディングヘッドと、
コントローラと、
を備え、前記ボンディングヘッドは、
前記半導体チップを吸引保持するアタッチメントと、
前記アタッチメントを着脱自在に保持し、前記アタッチメントを加熱する加熱部であって、第一加熱エリアと、前記第一加熱エリアを水平方向に囲む第二加熱エリアと、を有する加熱部と、
冷媒が流れることで前記第一加熱エリアを冷却する第一冷却経路と、
前記第一冷却経路と独立して設けられ、冷媒が流れることで前記第二加熱エリアを冷却する第二冷却経路と、
を含み、前記コントローラは、前記第一加熱エリアと前記第二加熱エリアの発熱量、および、前記第一冷却経路および前記第二冷却経路に流れる冷媒量を独立して制御する、
ことを特徴とする半導体装置の製造装置。 - 請求項3に記載の半導体装置の製造装置であって、
前記ボンディングヘッドは、さらに、前記第一加熱エリア及び前記第二加熱エリアの温度を検出する温度センサをそれぞれ有しており、
前記コントローラは、前記第一加熱エリア及び前記第二加熱エリアのエリア目標温度を予めそれぞれ記憶しており、前記記憶されたエリア目標温度と、前記温度センサでのエリア検出温度との差分に応じて、前記第一加熱エリアと第二加熱エリアの発熱量を制御する、
ことを特徴とする半導体装置の製造装置。 - 請求項1から4のいずれか1項に記載の半導体装置の製造装置であって、
前記コントローラは、ボンディング実行時に前記半導体チップの面内温度分布が均一になるように、前記第一加熱エリアと第二加熱エリアの発熱量を制御する、
ことを特徴とする半導体装置の製造装置。 - 請求項1,2,4,5のいずれか1項に記載の半導体装置の製造装置であって、
前記第一加熱エリアの前記エリア目標温度は、前記第二加熱エリアの前記エリア目標温度よりも低い、
ことを特徴とする半導体装置の製造装置。 - 半導体装置の製造方法であって、
ステージに基板を載置するステップと、
前記ステージに対して移動を可能なボンディングヘッドを駆動して、前記基板に半導体チップをボンディングするステップと、
を含み、
前記ボンディングヘッドは、
前記半導体チップを吸引保持するアタッチメントと、
前記アタッチメントを着脱自在に保持し、前記アタッチメントを加熱する加熱部であって、第一加熱エリアと、前記第一加熱エリアを水平方向に囲む第二加熱エリアと、を有する加熱部と、
前記第一加熱エリア及び前記第二加熱エリアそれぞれの温度を検出する温度センサと、
を含み、
前記ボンディングの実行時には、予め記憶した前記第一加熱エリア及び前記第二加熱エリアのエリア目標温度と、前記温度センサでのエリア検出温度との差分に応じて、前記第一加熱エリアと第二加熱エリアの発熱量を独立して制御し、
前記半導体チップのボンディングに先立って、さらに、前記エリア目標温度を取得する目標取得ステップを備え、
前記目標取得ステップでは、サンプルチップを前記ボンディングヘッドでボンディングさせるとともに、その際の前記サンプルチップの温度分布と前記第一加熱エリアおよび前記第二加熱エリアそれぞれのエリア検出温度とを取得し、得られたチップの温度分布およびエリア検出温度に基づいて前記第一加熱エリアおよび前記第二加熱エリアのエリア目標温度を算出する、
ことを特徴とする半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019209095 | 2019-11-19 | ||
JP2019209095 | 2019-11-19 | ||
PCT/JP2020/042204 WO2021100591A1 (ja) | 2019-11-19 | 2020-11-12 | 半導体装置の製造装置および製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2021100591A1 JPWO2021100591A1 (ja) | 2021-05-27 |
JPWO2021100591A5 JPWO2021100591A5 (ja) | 2022-02-25 |
JP7209400B2 true JP7209400B2 (ja) | 2023-01-20 |
Family
ID=75981237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021558328A Active JP7209400B2 (ja) | 2019-11-19 | 2020-11-12 | 半導体装置の製造装置および製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220254751A1 (ja) |
JP (1) | JP7209400B2 (ja) |
KR (1) | KR20220004193A (ja) |
CN (1) | CN113748494B (ja) |
SG (1) | SG11202111780XA (ja) |
WO (1) | WO2021100591A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2024036171A (ja) * | 2022-09-05 | 2024-03-15 | 株式会社新川 | 半導体装置の製造装置および製造方法 |
CN116190273B (zh) * | 2023-03-01 | 2023-11-21 | 苏州联讯仪器股份有限公司 | 一种吸附式芯片搬运装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007258483A (ja) | 2006-03-23 | 2007-10-04 | Optrex Corp | 熱圧着ツール |
JP2015233138A (ja) | 2014-06-10 | 2015-12-24 | セメス株式会社Semes Co., Ltd. | ボンディングヘッド及びこれを含むダイボンディング装置 |
JP2019033188A (ja) | 2017-08-09 | 2019-02-28 | 東レエンジニアリング株式会社 | 実装装置ならびに実装方法およびこれを用いた半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08124972A (ja) * | 1994-10-25 | 1996-05-17 | Fujitsu Ltd | フリップチップボンダ及びボンディング方法 |
JPH09289152A (ja) * | 1996-04-23 | 1997-11-04 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2004029576A (ja) | 2002-06-27 | 2004-01-29 | Toshiba Corp | 平面表示装置の製造方法、及びこれに用いる異方性導電膜の貼り付け用熱圧着装置 |
JP2008124972A (ja) * | 2006-11-15 | 2008-05-29 | Nec Corp | 通信システム、通信方法、および携帯端末装置 |
JP6349540B2 (ja) * | 2016-10-06 | 2018-07-04 | 株式会社新川 | 半導体チップの実装装置、および、半導体装置の製造方法 |
-
2020
- 2020-11-12 US US17/611,172 patent/US20220254751A1/en active Pending
- 2020-11-12 SG SG11202111780XA patent/SG11202111780XA/en unknown
- 2020-11-12 KR KR1020217039736A patent/KR20220004193A/ko not_active Application Discontinuation
- 2020-11-12 CN CN202080030674.XA patent/CN113748494B/zh active Active
- 2020-11-12 JP JP2021558328A patent/JP7209400B2/ja active Active
- 2020-11-12 WO PCT/JP2020/042204 patent/WO2021100591A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007258483A (ja) | 2006-03-23 | 2007-10-04 | Optrex Corp | 熱圧着ツール |
JP2015233138A (ja) | 2014-06-10 | 2015-12-24 | セメス株式会社Semes Co., Ltd. | ボンディングヘッド及びこれを含むダイボンディング装置 |
JP2019033188A (ja) | 2017-08-09 | 2019-02-28 | 東レエンジニアリング株式会社 | 実装装置ならびに実装方法およびこれを用いた半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113748494A (zh) | 2021-12-03 |
SG11202111780XA (en) | 2021-11-29 |
KR20220004193A (ko) | 2022-01-11 |
CN113748494B (zh) | 2024-04-05 |
US20220254751A1 (en) | 2022-08-11 |
WO2021100591A1 (ja) | 2021-05-27 |
JPWO2021100591A1 (ja) | 2021-05-27 |
TW202135132A (zh) | 2021-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7209400B2 (ja) | 半導体装置の製造装置および製造方法 | |
US10847434B2 (en) | Method of manufacturing semiconductor device, and mounting apparatus | |
TWI662671B (zh) | 接合裝置 | |
TWI728086B (zh) | 安裝裝置及安裝方法 | |
US10568245B2 (en) | Electronic-component mounting apparatus | |
TWI451508B (zh) | 用於矽晶粒的預加熱系統及方法 | |
US10896901B2 (en) | Method of manufacturing semiconductor device, and mounting device | |
US20200243356A1 (en) | Method for manufacturing mounting device and semiconductor device | |
TWI746888B (zh) | 封裝裝置 | |
TWI834007B (zh) | 半導體裝置的製造裝置及製造方法 | |
JP4036116B2 (ja) | 回路基板、半導体装置、半導体製造装置、回路基板の製造方法および半導体装置の製造方法 | |
US20230274951A1 (en) | Mounting device and mounting method | |
JP4732894B2 (ja) | ボンディング方法及びボンディング装置 | |
JP7317354B2 (ja) | 実装装置 | |
US20240014167A1 (en) | Substrate holder and bonding system | |
JP6461822B2 (ja) | 半導体装置の実装方法および実装装置 | |
JP4572348B2 (ja) | 半導体装置の製造方法および回路基板の製造方法 | |
JP2001028381A (ja) | 実装方法及び実装装置 | |
CN118117435A (zh) | 倒装芯片激光接合装置及方法 | |
JP2020065004A (ja) | 実装装置および半導体装置の製造方法 | |
JPH11204563A (ja) | 実装方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A5211 Effective date: 20211004 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211004 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220913 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221007 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221227 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7209400 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |