CN1135656A - 制造金属氧化物半导体场效应晶体管的方法 - Google Patents
制造金属氧化物半导体场效应晶体管的方法 Download PDFInfo
- Publication number
- CN1135656A CN1135656A CN96107400A CN96107400A CN1135656A CN 1135656 A CN1135656 A CN 1135656A CN 96107400 A CN96107400 A CN 96107400A CN 96107400 A CN96107400 A CN 96107400A CN 1135656 A CN1135656 A CN 1135656A
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- Prior art keywords
- semiconductor layer
- layer
- intrinsic semiconductor
- doped
- doped semiconductor
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 7
- 150000004706 metal oxides Chemical class 0.000 title claims description 7
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 72
- 229920005591 polysilicon Polymers 0.000 claims description 69
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 15
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 238000001764 infiltration Methods 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910007258 Si2H4 Inorganic materials 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950003905A KR960032647A (ko) | 1995-02-27 | 1995-02-27 | 모스 전계효과 트랜지스터의 제조방법 |
KR95-3905 | 1995-02-27 | ||
KR953905 | 1995-02-27 | ||
KR958126 | 1995-04-07 | ||
KR1019950008126A KR0179100B1 (ko) | 1995-04-07 | 1995-04-07 | 모스 전계효과 트랜지스터의 제조방법 |
KR95-8126 | 1995-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1135656A true CN1135656A (zh) | 1996-11-13 |
CN1081832C CN1081832C (zh) | 2002-03-27 |
Family
ID=26630896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96107400A Expired - Lifetime CN1081832C (zh) | 1995-02-27 | 1996-02-27 | 制造金属氧化物半导体场效应晶体管的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5817547A (zh) |
CN (1) | CN1081832C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865074A2 (de) * | 1997-02-20 | 1998-09-16 | Siemens Aktiengesellschaft | Verfahren zur Herstellung dotierter Polysiliciumschichten und -schichtstrukturen und Verfahren zum Strukturieren von Schichten und Schichtstrukturen, welche Polysiliciumschichten umfassen |
US6479373B2 (en) | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
CN101432859B (zh) * | 2006-04-28 | 2013-02-27 | 先进微装置公司 | 具有埋置应变层和减少的浮体效应的soi晶体管及其形成方法 |
TWI447913B (zh) * | 2005-11-09 | 2014-08-01 | Advanced Micro Devices Inc | 具有減少之閘極氧化物洩漏的取代金屬閘極電晶體 |
CN103972275A (zh) * | 2013-01-30 | 2014-08-06 | 旺宏电子股份有限公司 | 半导体装置及用以制造半导体装置的方法 |
CN111602249A (zh) * | 2017-12-22 | 2020-08-28 | 格拉芬斯科公司 | 在2d材料上的分子的组装以及电子设备 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265259B1 (en) * | 1998-02-06 | 2001-07-24 | Texas Instruments-Acer Incorporated | Method to fabricate deep sub-μm CMOSFETs |
US6323094B1 (en) * | 1998-02-06 | 2001-11-27 | Tsmc Acer Semiconductor Manufacturing Inc. | Method to fabricate deep sub-μm CMOSFETs |
US6051451A (en) * | 1998-04-21 | 2000-04-18 | Advanced Micro Devices, Inc. | Heavy ion implant process to eliminate polystringers in high density type flash memory devices |
CA2478317A1 (en) * | 2002-03-04 | 2003-09-18 | Medimmune, Inc. | Methods of preventing or treating disorders by administering an integrin .alpha.v.beta.3 antagonist in combination with an hmg-coa reductase inhibitor or a bisphosphonate |
US7229919B2 (en) * | 2003-01-08 | 2007-06-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a random grained polysilicon layer and a method for its manufacture |
US6780741B2 (en) * | 2003-01-08 | 2004-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers |
US7030430B2 (en) * | 2003-08-15 | 2006-04-18 | Intel Corporation | Transition metal alloys for use as a gate electrode and devices incorporating these alloys |
US6919247B1 (en) * | 2003-09-04 | 2005-07-19 | Advanced Micro Devices | Method of fabricating a floating gate |
US7497959B2 (en) * | 2004-05-11 | 2009-03-03 | International Business Machines Corporation | Methods and structures for protecting one area while processing another area on a chip |
CN100353500C (zh) * | 2004-07-29 | 2007-12-05 | 上海华虹Nec电子有限公司 | 一种栅氧化工艺的热处理方法 |
CN101572228B (zh) * | 2008-04-28 | 2011-03-23 | 中芯国际集成电路制造(北京)有限公司 | 多晶硅薄膜及栅极的形成方法 |
CN101577221B (zh) * | 2008-05-05 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | 多晶硅薄膜及多晶硅栅极的形成方法 |
US20220165886A1 (en) * | 2020-11-23 | 2022-05-26 | Changxin Memory Technologies, Inc. | Semiconductor structure and a manufacturing method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4354309A (en) * | 1978-12-29 | 1982-10-19 | International Business Machines Corp. | Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon |
FR2551244B1 (fr) * | 1983-08-26 | 1985-10-11 | Thomson Csf | Procede de fabrication d'un substrat pour dispositif a commande electrique et ecran de visualisation elabore a partir d'un tel substrat |
DE69230514T2 (de) * | 1991-07-31 | 2000-06-21 | Stmicroelectronics, Inc. | Verfahren zur Herstellung eines vergrabenen Kontaktes aus Polysilizium |
US5350698A (en) * | 1993-05-03 | 1994-09-27 | United Microelectronics Corporation | Multilayer polysilicon gate self-align process for VLSI CMOS device |
US5441904A (en) * | 1993-11-16 | 1995-08-15 | Hyundai Electronics Industries, Co., Ltd. | Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries |
-
1996
- 1996-02-27 US US08/607,641 patent/US5817547A/en not_active Expired - Lifetime
- 1996-02-27 CN CN96107400A patent/CN1081832C/zh not_active Expired - Lifetime
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865074A2 (de) * | 1997-02-20 | 1998-09-16 | Siemens Aktiengesellschaft | Verfahren zur Herstellung dotierter Polysiliciumschichten und -schichtstrukturen und Verfahren zum Strukturieren von Schichten und Schichtstrukturen, welche Polysiliciumschichten umfassen |
EP0865074A3 (de) * | 1997-02-20 | 2000-01-05 | Siemens Aktiengesellschaft | Verfahren zur Herstellung dotierter Polysiliciumschichten und -schichtstrukturen und Verfahren zum Strukturieren von Schichten und Schichtstrukturen, welche Polysiliciumschichten umfassen |
US6479373B2 (en) | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US6693022B2 (en) | 1997-02-20 | 2004-02-17 | Infineon Technologies Ag | CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures |
TWI447913B (zh) * | 2005-11-09 | 2014-08-01 | Advanced Micro Devices Inc | 具有減少之閘極氧化物洩漏的取代金屬閘極電晶體 |
TWI447908B (zh) * | 2005-11-09 | 2014-08-01 | Advanced Micro Devices Inc | 具有減少之閘極氧化物洩漏的取代金屬閘極電晶體 |
CN101432859B (zh) * | 2006-04-28 | 2013-02-27 | 先进微装置公司 | 具有埋置应变层和减少的浮体效应的soi晶体管及其形成方法 |
CN103972275A (zh) * | 2013-01-30 | 2014-08-06 | 旺宏电子股份有限公司 | 半导体装置及用以制造半导体装置的方法 |
CN111602249A (zh) * | 2017-12-22 | 2020-08-28 | 格拉芬斯科公司 | 在2d材料上的分子的组装以及电子设备 |
US11908926B2 (en) | 2017-12-22 | 2024-02-20 | Graphensic Ab | Assembling of molecules on a 2D material and an electronic device |
CN111602249B (zh) * | 2017-12-22 | 2024-03-08 | 格拉芬斯科公司 | 在2d材料上的分子的组装以及电子设备 |
Also Published As
Publication number | Publication date |
---|---|
CN1081832C (zh) | 2002-03-27 |
US5817547A (en) | 1998-10-06 |
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Owner name: HYNIX SEMICONDUCTOR INC. Free format text: FORMER NAME OR ADDRESS: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
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Address after: Gyeonggi Do, South Korea Patentee after: Hairyoksa Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co., Ltd. |
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Owner name: MAGNACHIP CO., LTD. Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20070525 |
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