CN113451173B - 气体检查方法、基板处理方法以及基板处理系统 - Google Patents

气体检查方法、基板处理方法以及基板处理系统

Info

Publication number
CN113451173B
CN113451173B CN202110276490.8A CN202110276490A CN113451173B CN 113451173 B CN113451173 B CN 113451173B CN 202110276490 A CN202110276490 A CN 202110276490A CN 113451173 B CN113451173 B CN 113451173B
Authority
CN
China
Prior art keywords
pressure
secondary valve
threshold value
standard deviation
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110276490.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN113451173A (zh
Inventor
松田梨沙子
网仓纪彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113451173A publication Critical patent/CN113451173A/zh
Application granted granted Critical
Publication of CN113451173B publication Critical patent/CN113451173B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
    • F16K37/0075—For recording or indicating the functioning of a valve in combination with test equipment
    • F16K37/0091—For recording or indicating the functioning of a valve in combination with test equipment by measuring fluid parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
CN202110276490.8A 2020-03-24 2021-03-15 气体检查方法、基板处理方法以及基板处理系统 Active CN113451173B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020052394A JP7398306B2 (ja) 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム
JP2020-052394 2020-03-24

Publications (2)

Publication Number Publication Date
CN113451173A CN113451173A (zh) 2021-09-28
CN113451173B true CN113451173B (zh) 2025-09-02

Family

ID=77808953

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110276490.8A Active CN113451173B (zh) 2020-03-24 2021-03-15 气体检查方法、基板处理方法以及基板处理系统

Country Status (4)

Country Link
US (1) US11644121B2 (enExample)
JP (1) JP7398306B2 (enExample)
CN (1) CN113451173B (enExample)
TW (1) TWI860460B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7432400B2 (ja) * 2020-03-11 2024-02-16 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US12068422B2 (en) * 2021-10-08 2024-08-20 Simmonds Precision Products, Inc. Systems and methods for cooling electronics
JP7869718B2 (ja) 2022-09-13 2026-06-03 キオクシア株式会社 成膜装置、および半導体装置の製造方法
CN117732749A (zh) * 2022-09-13 2024-03-22 京元电子股份有限公司 测试系统及其测试装置与测试方法
CN116659630B (zh) * 2023-07-27 2023-10-03 南京天梯自动化设备股份有限公司 基于雷诺数补偿的质量流量计标准表在线检定系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170076987A (ko) * 2015-12-26 2017-07-05 박대순 전압과 압력을 이용한 유량제어기의 오작동 감지 시스템
CN109119319A (zh) * 2017-06-23 2019-01-01 东京毅力科创株式会社 检查气体供给系统的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3180890B2 (ja) * 1995-04-30 2001-06-25 東京瓦斯株式会社 調節弁の遠隔監視装置
JP3932389B2 (ja) * 1998-01-19 2007-06-20 Ｓｍｃ株式会社 マスフローコントローラの自己診断方法
JP4634964B2 (ja) * 2006-05-02 2011-02-16 東邦瓦斯株式会社 発電システムの異常診断装置
JP5054500B2 (ja) * 2007-12-11 2012-10-24 株式会社フジキン 圧力制御式流量基準器
JP5118591B2 (ja) * 2008-09-17 2013-01-16 アークレイ株式会社 分析装置
JP5873681B2 (ja) * 2011-10-14 2016-03-01 株式会社堀場エステック 流量制御装置、流量制御装置に用いられる診断装置及び診断用プログラム
JP5976611B2 (ja) * 2013-08-27 2016-08-23 愛三工業株式会社 圧力調整弁
JP6541584B2 (ja) * 2015-09-16 2019-07-10 東京エレクトロン株式会社 ガス供給系を検査する方法
JP6517685B2 (ja) * 2015-12-22 2019-05-22 東芝メモリ株式会社 メモリシステムおよび制御方法
CN108369425B (zh) * 2015-12-25 2021-03-02 株式会社富士金 流量控制装置以及使用流量控制装置的异常检测方法
JP6654521B2 (ja) * 2016-07-15 2020-02-26 日立建機株式会社 建設機械
JP7042134B2 (ja) * 2018-03-29 2022-03-25 東京エレクトロン株式会社 基板処理システム及びガスの流量を求める方法
KR102260747B1 (ko) * 2018-03-29 2021-06-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 제어 시스템 및 반도체 장치의 제조 방법
JP7044629B2 (ja) * 2018-05-18 2022-03-30 株式会社堀場エステック 流体制御装置、及び、流量比率制御装置
JP7398886B2 (ja) * 2018-07-02 2023-12-15 東京エレクトロン株式会社 流量制御器、ガス供給系及び流量制御方法
US12467139B2 (en) * 2019-03-29 2025-11-11 Applied Materials Inc. Multizone flow distribution system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170076987A (ko) * 2015-12-26 2017-07-05 박대순 전압과 압력을 이용한 유량제어기의 오작동 감지 시스템
CN109119319A (zh) * 2017-06-23 2019-01-01 东京毅力科创株式会社 检查气体供给系统的方法

Also Published As

Publication number Publication date
KR20210119295A (ko) 2021-10-05
JP2021152705A (ja) 2021-09-30
TWI860460B (zh) 2024-11-01
CN113451173A (zh) 2021-09-28
TW202146856A (zh) 2021-12-16
US11644121B2 (en) 2023-05-09
US20210301942A1 (en) 2021-09-30
JP7398306B2 (ja) 2023-12-14

Similar Documents

Publication Publication Date Title
JP7398306B2 (ja) ガス検査方法、基板処理方法及び基板処理システム
US11742228B2 (en) Substrate processing method and substrate processing system
TWI851599B (zh) 自動校準程序獨立前饋控制
US10418289B2 (en) Anomaly detection method and semiconductor manufacturing apparatus
JP2012503339A (ja) 自己診断半導体装置
KR20220009892A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
US12106948B2 (en) Plasma processing apparatus and monitoring device
TWI558840B (zh) Plasma processing device
WO2000001002A1 (fr) Procede et appareil de traitement sous vide
JP2009064814A (ja) プラズマ処理装置
TW202312273A (zh) 氣體供給系統、氣體控制系統、電漿處理裝置及氣體控制方法
US20240212987A1 (en) Gas supply system, gas control system, plasma processing apparatus, and gas control method
JPH1187318A (ja) ドライエッチング装置およびガス流量制御の検査方法
US20240212979A1 (en) Method for determining amount of wear of edge ring, plasma processing apparatus, and substrate processing system
JP7621296B2 (ja) ガス供給システム、プラズマ処理装置及びガス供給方法
JP5227638B2 (ja) 真空処理装置
JP7546364B2 (ja) 基板処理方法、ガス流評価用基板及び基板処理装置
JP2023027532A (ja) 流量制御方法及び流量制御システム
CN115715422A (zh) 衬底处理系统的直接驱动电路中的开关的保护系统
JP2002296096A (ja) 処理方法及び処理装置
JP7858400B2 (ja) 基板処理装置及びリカバリ処理方法
KR20080077722A (ko) 압력 역류 방지기능을 갖는 반도체 제조설비
WO2024070843A1 (ja) 基板処理方法及び基板処理装置
JP2005093740A (ja) プラズマｃｖｄ装置の異常検出方法
JP2001043995A (ja) プラズマ放電状態判定方法とプラズマ処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant