JP7398306B2 - ガス検査方法、基板処理方法及び基板処理システム - Google Patents

ガス検査方法、基板処理方法及び基板処理システム Download PDF

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Publication number
JP7398306B2
JP7398306B2 JP2020052394A JP2020052394A JP7398306B2 JP 7398306 B2 JP7398306 B2 JP 7398306B2 JP 2020052394 A JP2020052394 A JP 2020052394A JP 2020052394 A JP2020052394 A JP 2020052394A JP 7398306 B2 JP7398306 B2 JP 7398306B2
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Japan
Prior art keywords
pressure
flow rate
standard deviation
gas
secondary valve
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JP2020052394A
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English (en)
Japanese (ja)
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JP2021152705A (ja
JP2021152705A5 (enExample
Inventor
梨沙子 松田
紀彦 網倉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020052394A priority Critical patent/JP7398306B2/ja
Priority to US17/189,804 priority patent/US11644121B2/en
Priority to KR1020210028154A priority patent/KR20210119295A/ko
Priority to TW110108573A priority patent/TWI860460B/zh
Priority to CN202110276490.8A priority patent/CN113451173B/zh
Publication of JP2021152705A publication Critical patent/JP2021152705A/ja
Publication of JP2021152705A5 publication Critical patent/JP2021152705A5/ja
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
    • F16K37/0075—For recording or indicating the functioning of a valve in combination with test equipment
    • F16K37/0091—For recording or indicating the functioning of a valve in combination with test equipment by measuring fluid parameters
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
JP2020052394A 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム Active JP7398306B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020052394A JP7398306B2 (ja) 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム
US17/189,804 US11644121B2 (en) 2020-03-24 2021-03-02 Gas inspection method, substrate processing method, and substrate processing system
KR1020210028154A KR20210119295A (ko) 2020-03-24 2021-03-03 가스 검사 방법, 기판 처리 방법 및 기판 처리 시스템
TW110108573A TWI860460B (zh) 2020-03-24 2021-03-10 氣體檢查方法、基板處理方法及基板處理系統
CN202110276490.8A CN113451173B (zh) 2020-03-24 2021-03-15 气体检查方法、基板处理方法以及基板处理系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020052394A JP7398306B2 (ja) 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム

Publications (3)

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JP2021152705A JP2021152705A (ja) 2021-09-30
JP2021152705A5 JP2021152705A5 (enExample) 2023-01-11
JP7398306B2 true JP7398306B2 (ja) 2023-12-14

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Country Link
US (1) US11644121B2 (enExample)
JP (1) JP7398306B2 (enExample)
KR (1) KR20210119295A (enExample)
CN (1) CN113451173B (enExample)
TW (1) TWI860460B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7432400B2 (ja) * 2020-03-11 2024-02-16 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US12068422B2 (en) * 2021-10-08 2024-08-20 Simmonds Precision Products, Inc. Systems and methods for cooling electronics
CN116659630B (zh) * 2023-07-27 2023-10-03 南京天梯自动化设备股份有限公司 基于雷诺数补偿的质量流量计标准表在线检定系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017059200A (ja) 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
WO2017110066A1 (ja) 2015-12-25 2017-06-29 株式会社フジキン 流量制御装置および流量制御装置を用いる異常検知方法

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JP3180890B2 (ja) * 1995-04-30 2001-06-25 東京瓦斯株式会社 調節弁の遠隔監視装置
JP3932389B2 (ja) * 1998-01-19 2007-06-20 Ｓｍｃ株式会社 マスフローコントローラの自己診断方法
JP4634964B2 (ja) * 2006-05-02 2011-02-16 東邦瓦斯株式会社 発電システムの異常診断装置
JP5054500B2 (ja) * 2007-12-11 2012-10-24 株式会社フジキン 圧力制御式流量基準器
JP5118591B2 (ja) * 2008-09-17 2013-01-16 アークレイ株式会社 分析装置
JP5873681B2 (ja) * 2011-10-14 2016-03-01 株式会社堀場エステック 流量制御装置、流量制御装置に用いられる診断装置及び診断用プログラム
JP5976611B2 (ja) * 2013-08-27 2016-08-23 愛三工業株式会社 圧力調整弁
JP6517685B2 (ja) * 2015-12-22 2019-05-22 東芝メモリ株式会社 メモリシステムおよび制御方法
KR20170076987A (ko) * 2015-12-26 2017-07-05 박대순 전압과 압력을 이용한 유량제어기의 오작동 감지 시스템
JP6654521B2 (ja) * 2016-07-15 2020-02-26 日立建機株式会社 建設機械
JP6811147B2 (ja) * 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
KR102260747B1 (ko) * 2018-03-29 2021-06-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 제어 시스템 및 반도체 장치의 제조 방법
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JP2017059200A (ja) 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
WO2017110066A1 (ja) 2015-12-25 2017-06-29 株式会社フジキン 流量制御装置および流量制御装置を用いる異常検知方法

Also Published As

Publication number Publication date
CN113451173B (zh) 2025-09-02
JP2021152705A (ja) 2021-09-30
US11644121B2 (en) 2023-05-09
TWI860460B (zh) 2024-11-01
CN113451173A (zh) 2021-09-28
US20210301942A1 (en) 2021-09-30
KR20210119295A (ko) 2021-10-05
TW202146856A (zh) 2021-12-16

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