TWI860460B - 氣體檢查方法、基板處理方法及基板處理系統 - Google Patents

氣體檢查方法、基板處理方法及基板處理系統 Download PDF

Info

Publication number
TWI860460B
TWI860460B TW110108573A TW110108573A TWI860460B TW I860460 B TWI860460 B TW I860460B TW 110108573 A TW110108573 A TW 110108573A TW 110108573 A TW110108573 A TW 110108573A TW I860460 B TWI860460 B TW I860460B
Authority
TW
Taiwan
Prior art keywords
pressure
flow controller
standard deviation
threshold value
secondary valve
Prior art date
Application number
TW110108573A
Other languages
English (en)
Chinese (zh)
Other versions
TW202146856A (zh
Inventor
松田梨沙子
網倉紀彦
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202146856A publication Critical patent/TW202146856A/zh
Application granted granted Critical
Publication of TWI860460B publication Critical patent/TWI860460B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
    • F16K37/0075—For recording or indicating the functioning of a valve in combination with test equipment
    • F16K37/0091—For recording or indicating the functioning of a valve in combination with test equipment by measuring fluid parameters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
TW110108573A 2020-03-24 2021-03-10 氣體檢查方法、基板處理方法及基板處理系統 TWI860460B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020052394A JP7398306B2 (ja) 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム
JP2020-052394 2020-03-24

Publications (2)

Publication Number Publication Date
TW202146856A TW202146856A (zh) 2021-12-16
TWI860460B true TWI860460B (zh) 2024-11-01

Family

ID=77808953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108573A TWI860460B (zh) 2020-03-24 2021-03-10 氣體檢查方法、基板處理方法及基板處理系統

Country Status (5)

Country Link
US (1) US11644121B2 (enExample)
JP (1) JP7398306B2 (enExample)
KR (1) KR20210119295A (enExample)
CN (1) CN113451173B (enExample)
TW (1) TWI860460B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7432400B2 (ja) * 2020-03-11 2024-02-16 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US12068422B2 (en) * 2021-10-08 2024-08-20 Simmonds Precision Products, Inc. Systems and methods for cooling electronics
CN116659630B (zh) * 2023-07-27 2023-10-03 南京天梯自动化设备股份有限公司 基于雷诺数补偿的质量流量计标准表在线检定系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032805A1 (ja) * 2008-09-17 2010-03-25 アークレイ株式会社 流量センサおよびこれを備えた分析装置
US8381755B2 (en) * 2007-12-11 2013-02-26 Fujikin Incorporated Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same
JP2017059200A (ja) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
US20190354120A1 (en) * 2018-05-18 2019-11-21 Horiba Stec, Co., Ltd. Fluid control device and flow rate ratio control device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3180890B2 (ja) * 1995-04-30 2001-06-25 東京瓦斯株式会社 調節弁の遠隔監視装置
JP3932389B2 (ja) * 1998-01-19 2007-06-20 Ｓｍｃ株式会社 マスフローコントローラの自己診断方法
JP4634964B2 (ja) * 2006-05-02 2011-02-16 東邦瓦斯株式会社 発電システムの異常診断装置
JP5873681B2 (ja) * 2011-10-14 2016-03-01 株式会社堀場エステック 流量制御装置、流量制御装置に用いられる診断装置及び診断用プログラム
JP5976611B2 (ja) * 2013-08-27 2016-08-23 愛三工業株式会社 圧力調整弁
JP6517685B2 (ja) * 2015-12-22 2019-05-22 東芝メモリ株式会社 メモリシステムおよび制御方法
JP6892687B2 (ja) * 2015-12-25 2021-06-23 株式会社フジキン 流量制御装置および流量制御装置を用いる異常検知方法
KR20170076987A (ko) * 2015-12-26 2017-07-05 박대순 전압과 압력을 이용한 유량제어기의 오작동 감지 시스템
JP6654521B2 (ja) * 2016-07-15 2020-02-26 日立建機株式会社 建設機械
JP6811147B2 (ja) * 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
KR102260747B1 (ko) * 2018-03-29 2021-06-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 제어 시스템 및 반도체 장치의 제조 방법
JP7042134B2 (ja) * 2018-03-29 2022-03-25 東京エレクトロン株式会社 基板処理システム及びガスの流量を求める方法
JP7398886B2 (ja) * 2018-07-02 2023-12-15 東京エレクトロン株式会社 流量制御器、ガス供給系及び流量制御方法
US12467139B2 (en) * 2019-03-29 2025-11-11 Applied Materials Inc. Multizone flow distribution system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8381755B2 (en) * 2007-12-11 2013-02-26 Fujikin Incorporated Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same
WO2010032805A1 (ja) * 2008-09-17 2010-03-25 アークレイ株式会社 流量センサおよびこれを備えた分析装置
JP2017059200A (ja) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
US20190354120A1 (en) * 2018-05-18 2019-11-21 Horiba Stec, Co., Ltd. Fluid control device and flow rate ratio control device

Also Published As

Publication number Publication date
CN113451173B (zh) 2025-09-02
JP2021152705A (ja) 2021-09-30
US11644121B2 (en) 2023-05-09
JP7398306B2 (ja) 2023-12-14
CN113451173A (zh) 2021-09-28
US20210301942A1 (en) 2021-09-30
KR20210119295A (ko) 2021-10-05
TW202146856A (zh) 2021-12-16

Similar Documents

Publication Publication Date Title
TWI860460B (zh) 氣體檢查方法、基板處理方法及基板處理系統
TWI713581B (zh) 用於半導體設備之匹配腔室性能的方法
US20130119016A1 (en) Plasma processing apparatus and plasma processing method
JP2008072030A (ja) プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法
TWI851599B (zh) 自動校準程序獨立前饋控制
JP2012503339A (ja) 自己診断半導体装置
JP2023524766A (ja) リアルタイムのウエハチャック検出のための装置及び方法
WO2000001002A1 (fr) Procede et appareil de traitement sous vide
US11417553B2 (en) Substrate deformation detection and correction
TW201719714A (zh) 用於低功率電壓模式操作之循環平均頻率的調諧
US11742228B2 (en) Substrate processing method and substrate processing system
JP2008205313A (ja) プラズマ処理装置およびデチャック異常検出方法
CN111756338A (zh) 高频供给装置和高频电功率的供给方法
JP7531111B2 (ja) プラズマ処理の異常判定システムおよび異常判定方法
JPH1187318A (ja) ドライエッチング装置およびガス流量制御の検査方法
JP4970847B2 (ja) プラズマ処理の異常動作を検知するための方法
JP7546364B2 (ja) 基板処理方法、ガス流評価用基板及び基板処理装置
US20210074517A1 (en) Plasma processing apparatus and control method
KR102895709B1 (ko) 기판 처리 방법 및 기판 처리 시스템
JP2015220441A (ja) 半導体製造装置
WO2002082521A1 (fr) Procede de traitement et processeur
TWI803569B (zh) 偵測基板自基板處理系統之靜電卡盤的部分鬆脫
KR20080077722A (ko) 압력 역류 방지기능을 갖는 반도체 제조설비
JP2005093740A (ja) プラズマｃｖｄ装置の異常検出方法
TW202336898A (zh) 用以監測基板處理系統中靜電卡盤之效能的系統