CN113366074B - 用于切割胶带的粘合剂组合物和包含其的切割胶带 - Google Patents
用于切割胶带的粘合剂组合物和包含其的切割胶带 Download PDFInfo
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- CN113366074B CN113366074B CN202080011879.3A CN202080011879A CN113366074B CN 113366074 B CN113366074 B CN 113366074B CN 202080011879 A CN202080011879 A CN 202080011879A CN 113366074 B CN113366074 B CN 113366074B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract
本发明提供了用于切割胶带的粘合剂组合物和包含其的切割胶带,所述用于切割胶带的粘合剂组合物可以防止因切割过程中发生的氧抑制现象而导致的芯片拾取的成功率降低。所述用于切割胶带的粘合剂组合物包含粘结剂、单线态氧清除剂、光敏剂和光引发剂。
Description
技术领域
本申请要求于2019年9月26日向韩国知识产权局提交的韩国专利申请第10-2019-0119119号以及2020年7月31日向韩国知识产权局提交的韩国专利申请第10-2020-0096318号的优先权,其公开内容通过引用整体并入本文。本发明涉及用于切割胶带的粘合剂组合物和包含其的切割胶带。
背景技术
通常,半导体芯片制造过程包括在晶片上形成精细图案以及将晶片抛光并封装以符合最终器件的规格的过程。
封装过程包括:检查半导体芯片中的缺陷的晶片检查过程;通过切割将晶片分离成单个芯片的切割过程;将单个芯片附接至电路膜或引线框架的安装板的管芯接合过程;通过电连接手段(例如导线)将设置在半导体芯片上的芯片焊盘与电路膜或引线框架的电路图案连接的导线接合过程;用包封材料包封半导体芯片以保护半导体芯片的内部电路和其他部件的模制过程;对连接引线的阻挡条进行切割的修整过程;将引线弯曲成期望形状的成形过程;以及检查经封装的产品中的缺陷的最终产品检查过程。
在切割过程中,通过金刚石砂轮等将晶片切割成预定厚度。在切割过程之前,在合适的条件下将切割胶带层合到晶片的背面上以固定晶片,然后进行切割过程。此外,使用管芯接合膜(粘合膜)将切割的单个芯片附接至电路板。通过切割过程,由其中形成有复数个芯片的半导体晶片产生分离的单个芯片。从广义上说,切割过程是通过研磨半导体晶片的背面并沿芯片之间的切割线切割半导体晶片来生产复数个分离的单个芯片的过程。
此外,在常规切割过程中,存在由于对芯片的损坏而导致成品率降低的问题。为了解决该问题,已经提出了包括在用刀片切割半导体芯片之后进行的扩展过程的制造过程。在该制造过程中,使经切割的半导体晶片扩展,用紫外(UV)光照射半导体晶片的基础膜,并且拾取复数个单个芯片。
然而,在扩展过程期间,出现管芯举离现象,其中经切割的芯片的边缘被举离,并且氧被捕获在举离部分中。此后,在照射UV光的过程中产生的自由基与被捕获的氧反应而形成过氧自由基,并因此在芯片的边缘处发生氧抑制现象(oxygen inhibitionphenomenon)。已经发生氧抑制现象的表面仍然具有高粘合性,并且当拾取芯片时,出现由于膜之间的固着而导致芯片拾取的成功率降低的问题。
发明内容
技术问题
本发明的一个目的是提供能够防止因切割过程中发生的氧抑制现象而降低芯片拾取的成功率的用于切割胶带的粘合剂组合物,和包含用于切割胶带的粘合剂组合物的切割胶带。
然而,通过本发明要实现的目的不限于上述目的,并且本领域技术人员将从以下描述中清楚地理解未提及的其他目的。
技术方案
本发明的一个实施方案提供了用于切割胶带的粘合剂组合物,该粘合剂组合物包含:粘结剂;单线态氧清除剂;光敏剂;和光引发剂。
本发明的另一个实施方案提供了切割胶带,该切割胶带包括:基础膜;和形成在基础膜的至少一个表面上的粘合剂层,其中粘合剂层包含所述用于切割胶带的粘合剂组合物。
有益效果
如上所述,由于根据本发明的一个实施方案的用于切割胶带的粘合剂组合物还包含单线态氧清除剂和光敏剂,因此在UV照射时光敏剂可以将大气氧转化为单线态氧,并且单线态氧清除剂可以与单线态氧反应,从而减轻氧抑制现象。
由于根据本发明的一个实施方案的切割胶带在粘合剂层中包含用于切割胶带的粘合剂组合物,因此其可以防止芯片拾取的成功率降低。
本发明的效果不限于上述效果,并且本领域技术人员将从本说明书中清楚地理解未提及的效果。
具体实施方式
本说明书和所附权利要求书中使用的术语不应解释为限于一般含义或字典定义,而应基于发明人可以适当地限定术语的含义以便以最佳方式描述其发明的原则,解释为具有与本发明的技术范围相关的含义和概念。因此,应理解,本说明书中描述的实施方案仅仅是本发明的最优选实施例,而并不覆盖本发明的所有技术精神,并因此在提交本发明时可能存在能够替代它们的各种等同方案和修改方案。
在整个本说明书中,应理解,当任一部分被称为“包含”任一组分时,除非另外说明,否则其不排除其他组分,而是还可以包含其他组分。
在整个本说明书中,当任一构件被称为在另一构件“上”时,其不仅指任一构件与另一构件接触的情况,而且指在两个构件之间存在第三构件的情况。
在整个本说明书中,单位“重量份”可以指组分之间的重量比。
在整个本说明书中,术语“(甲基)丙烯酸酯”用作丙烯酸酯和甲基丙烯酸酯的集合术语。
在整个本说明书中,任一化合物的“重均分子量”和“数均分子量”可以使用该化合物的分子量和分子量分布来计算。具体地,可以通过以下来获得化合物的分子量和分子量分布:将四氢呋喃(THF)和该化合物置于1ml玻璃小瓶中以制备其中化合物浓度为1重量%的测试样品;通过过滤器(孔径:0.45μm)过滤标准样品(聚苯乙烯)和测试样品;将样品滤液中的每一者注入GPC进样器中;以及将测试样品的洗脱时间与标准样品的校准曲线进行比较。此时,可以使用Infinity II 1260(Agilent Technologies,Inc.)作为测量仪器,并且可以将流量和柱温分别设定为1.00mL/分钟和40.0℃。
在整个本说明书中,可以使用差示扫描分析(Differential Scanning Analysis,DSC)测量“玻璃化转变温度(Tg)”。具体地,可以使用DSC(差示扫描量热仪,DSCQ2000,TAinstrument Korea)通过以下来测量玻璃化转变温度:在-60℃至150℃的温度范围内以5℃/分钟的加热速率对样品进行加热,在该温度范围内进行两次循环实验,并且测量作为在该点处存在热变化量的点而绘制的DSC曲线的中点。
在常规切割过程的扩展过程中,出现管芯举离现象,其中经切割的芯片的边缘被举离,并且氧被捕获在举离部分中。此后,在照射紫外(UV)光的过程中产生的自由基与被捕获的氧反应而形成过氧自由基,并因此在芯片的边缘处发生氧抑制现象。已经发生氧抑制现象的表面仍然具有高粘合性,并且当拾取芯片时,出现由于膜之间的固着而导致芯片拾取的成功率降低的问题。
本发明的一个实施方案提供了用于切割胶带的粘合剂组合物,所述粘合剂组合物包含:粘结剂;单线态氧清除剂;光敏剂;和光引发剂。
由于根据本发明的用于切割胶带的粘合剂组合物还包含单线态氧清除剂和光敏剂,因此在UV光照射时光敏剂可以将大气氧转化为单线态氧,并且单线态氧清除剂可以与转化的单线态氧反应,从而除去与自由基反应的氧。因此,可以减轻氧抑制现象。
根据本发明的一个实施方案,粘结剂可以包括玻璃化转变温度为-28℃至-58℃、-29℃至-57℃、-30℃至-56℃、-30℃至-55℃、-31℃至-54℃、-32℃至-53℃、-33℃至-52℃、-34℃至-51℃、或-35℃至-50℃的基于(甲基)丙烯酸酯的树脂。当如上所述选择粘结剂时,可以控制粘合剂组合物的粘合力,并且可以通过包含在粘合剂组合物中的光敏剂控制大气氧产生单线态氧的浓度。
根据本发明的一个实施方案,基于(甲基)丙烯酸酯的树脂可以包含基于(甲基)丙烯酸酯的单体与含可交联官能团的单体的共聚物。当基于(甲基)丙烯酸酯的树脂包含上述共聚物时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,基于(甲基)丙烯酸酯的单体可以为(甲基)丙烯酸烷基酯。更具体地,基于(甲基)丙烯酸酯的单体可以为以下具有包含1至12个碳原子的烷基的单体中的一者或者两者或更多者的混合物:(甲基)丙烯酸戊酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)基丙烯酸己酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸十二烷基酯和(甲基)丙烯酸癸酯。当基于(甲基)丙烯酸酯的单体选自上述的那些时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,含可交联官能团的单体可以为含羟基的单体、含羧基的单体和含氮的单体中的一者或者两者或更多者的混合物。当含可交联官能团的单体选自上述的那些时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,含羟基的单体可以为(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸2-羟基乙二醇酯或(甲基)丙烯酸2-羟基丙二醇酯。当含羟基的单体选自上述的那些时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,含羧基的单体可以为(甲基)丙烯酸、2-(甲基)丙烯酰氧基乙酸、3-(甲基)丙烯酰氧基丙酸、4-(甲基)丙烯酰氧基丁酸、丙烯酸二聚体、衣康酸、马来酸或马来酸酐。当含羧基的单体选自上述的那些时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,含氮的单体可以为(甲基)丙烯腈、N-乙烯基吡咯烷酮或N-乙烯基己内酰胺。当含氮的单体选自上述的那些时,可以实现粘合剂层的基本物理特性。
根据本发明的一个实施方案,为了改善其他功能性例如相容性,基于(甲基)丙烯酸酯的树脂还可以进一步包含乙酸乙烯酯、苯乙烯或丙烯腈。当基于(甲基)丙烯酸酯的树脂如上所述还包含乙酸乙烯酯、苯乙烯或丙烯腈时,其他功能性例如相容性可以得到改善。
根据本发明的一个实施方案,单线态氧清除剂可以为选自以下的一者:二甲基蒽(DMA)、二丁基蒽(DBA)、三乙基甲硅烷基乙炔基-并五苯、二苯基呋喃(DPF)及其组合。当单线态氧清除剂选自上述的那些时,可以减轻氧抑制现象,从而提高芯片拾取的成功率。
根据本发明的一个实施方案,基于100重量份的粘结剂,粘合剂组合物中单线态氧清除剂的含量可以为0.5重量份至20.0重量份、1.0重量份至19重量份、2重量份至18重量份、3重量份至17重量份、或5重量份至16重量份。当将单线态氧清除剂的含量控制在上述的以上范围内时,可以减轻氧抑制现象,从而提高芯片拾取的成功率。
根据本发明的一个实施方案,光敏剂可以为选自以下的一者:基于蒽的化合物、基于菲的化合物、基于的化合物、基于苯并芘的化合物、基于荧蒽的化合物、基于红荧烯的化合物、基于芘的化合物、基于/>吨酮的化合物、基于阴丹士林的化合物、基于噻吨-9-酮的化合物及其组合。优选地,光敏剂可以为异丙基噻吨酮。当光敏剂选自上述的那些时,可以通过控制在UV照射时由光敏剂将大气氧转化为单线态氧的速率来控制单线态氧与单线态氧清除剂的反应效率。具体地,光敏剂通过在UV照射时接收能量而变成激发态,并且光敏剂将能量转移至三线态氧(3O2),因此将三线态氧转化为单线态氧(1O2)。此后,单线态氧清除剂可以与单线态氧反应,因此减少了氧抑制现象。光敏剂和光引发剂之间的能量差越小,它们之间的能量转移越容易,并因此反应有效地进行。
根据本发明的一个实施方案,基于100重量份的粘结剂,粘合剂组合物中的光敏剂的含量可以为0.1重量份至1.0重量份、0.2重量份至0.9重量份、0.3重量份至0.8份、0.4重量份至0.7重量份、或0.5重量份至0.6重量份。当将光敏剂的含量控制在上述范围内时,可以通过控制在UV照射时由光敏剂将大气氧转化为单线态氧的速率来控制单线态氧与单线态氧清除剂的反应效率。
根据本发明的一个实施方案,光引发剂不受限制,并且可以使用相关领域中已知的常规光引发剂。光引发剂的用量可以考虑所形成的粘合剂层的物理特性和特征以及所使用的粘结剂的种类和特性来确定。
根据本发明的一个实施方案,基于100重量份的粘结剂,粘合剂组合物中的光引发剂的含量可以为0.1重量份至20重量份、1重量份至19重量份、2重量份至18重量份、3重量份至17重量份、4重量份至16重量份、5重量份至15重量份、6重量份至14重量份、7重量份至13重量份、8重量份至12重量份、或9重量份至11重量份。当将光引发剂的含量控制在上述范围内时,可以通过提高由UV照射而产生自由基的效率来改善粘合剂层和与其相邻的层之间的界面处的粘合力,并且可以防止发生未反应的光引发剂向与粘合剂层相邻的层的转移。
根据本发明的一个实施方案,光引发剂可以包含选自以下的一者:苯偶姻及其烷基醚、苯乙酮、蒽醌、噻吨酮、缩酮、二苯甲酮、α-氨基苯乙酮、酰基氧化膦、肟酯及其组合。当光引发剂选自上述的那些时,可以通过提高由UV照射而产生自由基的效率来改善粘合剂层之间的界面处的粘合力,并且可以防止发生未反应的光引发剂向粘合剂层的转移。
根据本发明的一个实施方案,用于切割胶带的粘合剂组合物还可以包含选自固化剂、溶剂及其混合物中的一者。当用于切割胶带的粘合剂组合物如上所述还包含选自固化剂、溶剂及其混合物中的一者时,可以控制用于切割胶带的粘合剂组合物的固化速率,同时改善组合物的可加工性。
根据本发明的一个实施方案,固化剂可以包括选自以下的一者或更多者:基于异氰酸酯的化合物、基于氮丙啶的化合物、基于环氧的化合物和基于金属螯合物的化合物。当固化剂选自上述的那些时,可以控制固化速率并防止粘合剂层的物理特性改变。
根据本发明的一个实施方案,固化剂的用量可以考虑所形成的粘合剂层的物理特性和特征以及所使用的粘结剂的种类和特性来确定。基于100重量份的粘结剂,根据以上实施方案的用于形成切割胶带的粘合剂层的粘合剂组合物可以包含0.1重量份至10重量份的量的固化剂。
根据本发明的一个实施方案,溶剂可以为有机溶剂。有机溶剂可以包括选自醇、醚、乙酸酯、酮及其组合中的一者。
本发明的一个实施方案可以提供这样的切割胶带,所述切割胶带包括:基础膜;和形成在基础膜的至少一个表面上的粘合剂层,其中粘合剂层包含根据上述实施方案的用于切割胶带的粘合剂组合物。
通过在粘合剂层中包含所述用于切割胶带的粘合剂组合物,根据本发明的一个实施方案的切割胶带可以提高芯片拾取的成功率。
根据本发明的一个实施方案,基础膜不限于特定类型,并且可以使用本领域中已知的塑料膜或金属箔作为基础膜。或者,基础膜可以为选自以下的一种聚合物膜:聚烯烃膜、聚酯膜、聚碳酸酯膜、聚氯乙烯膜、聚四氟乙烯膜、聚丁烯膜、聚丁二烯膜、氯乙烯共聚物膜、乙烯-乙酸乙烯酯共聚物膜、乙烯-丙烯共聚物膜和乙烯-丙烯酸烷基酯共聚物膜。例如,基础膜可以包含低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、聚丙烯无规共聚物、聚丙烯嵌段共聚物、均聚丙烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、乙烯-甲基丙烯酸共聚物、乙烯-甲基丙烯酸甲酯共聚物、乙烯-离聚物共聚物、乙烯-乙烯醇共聚物、聚丁烯、苯乙烯共聚物,或者其两者或更多者的混合物。在此,包含两种或更多种聚合物的混合物的基础膜意指包括具有其中分别包含上述聚合物的两个或更多个膜彼此堆叠的结构的所有膜,或者包含上述聚合物的两者或更多者的单层膜。
根据本发明的一个实施方案,基础膜的厚度没有特别限制,通常将基础膜形成为具有10μm至200μm,优选50μm至180μm的厚度。如果厚度小于10μm,则不能稳定地实现在切割过程中控制切割深度,而如果厚度大于200μm,则在切割过程中可能产生大量毛刺,或者膜的伸长率可能降低,并因此可能无法准确地进行扩展过程。
根据本发明的一个实施方案,如有必要,可以使基础膜经受常规的物理或化学处理例如哑光处理、电晕放电处理、底漆处理或交联处理。
粘合剂层的厚度可以为0.5μm至50μm、或5μm至30μm。
根据本发明的一个实施方案,涉及包含在粘合剂层中的用于切割胶带的粘合剂组合物的内容包括以上参照实施方案描述的所有内容。
根据本发明的一个实施方案,由于切割胶带在粘合剂层中还包含单线态氧清除剂,因此可以通过促使过氧自由基减少来减轻氧抑制现象,由此粘合剂层在UV光照射之后的粘合力相对于粘合剂层的初始粘合力的降低率可以为20%至80%。更具体地,由于切割胶带在粘合剂层中还包含单线态氧清除剂,因此可以通过诱发过氧自由基的减少来减轻氧抑制现象,从而粘合剂层在氧暴露条件下UV光照射之后的粘合力相对于粘合剂层的初始粘合力的降低率可以为20%至80%。
发明实施方式
在下文中,将参照实施例详细地描述本发明。然而,根据本发明的实施例可以被修改为各种不同形式,并且本发明的范围不被解释为限于以下描述的实施例。提供本发明的实施例以向本领域技术人员更完整地说明本发明。
[实施例和比较例:管芯接合膜、切割胶带和切割管芯接合膜的生产]
实施例1
(1)管芯接合膜的生产
在搅拌下,将由以下构成的组合物与甲基乙基酮混合:90g高分子量丙烯酸树脂(Tg:20℃;重均分子量:850000)、30g环氧树脂(酚醛清漆型环氧树脂;软化点:94℃)、20g作为用于环氧树脂的固化剂的酚醛树脂(苯酚酚醛清漆树脂;软化点:94℃)、0.1g中温引发固化促进剂(2-甲基-咪唑)、0.5g高温引发固化促进剂(2-苯基-4-甲基-咪唑)和20g作为填料的二氧化硅(平均粒径:75nm)。
将混合物施加到厚度为38μm的经脱模处理的PET上,并在110℃下干燥3分钟,从而产生涂层厚度为20μm的管芯接合膜。
(2)切割胶带的生产
通过将约3g基于TDI的异氰酸酯固化剂、5g光引发剂(Irgacure184)、约4.6g二甲基蒽(TCI,>98%,Mw:106.28g/mol)和0.43g异丙基噻吨酮添加到通过向基于丙烯酸酯的树脂的主链中添加20重量%作为侧链的丙烯酸酯官能团而获得的100g聚合物树脂(Mw:700000)中来制备粘合剂组合物。
将粘合剂组合物施加到厚度为38μm的经脱模处理的PET上,并在110℃下干燥3分钟以形成厚度为10μm的粘合剂层。将形成的粘合剂层层合在厚度为90μm的聚烯烃基础膜上,随后进行老化,从而生产切割胶带。
(3)切割管芯接合膜的生产
通过在5kgf/cm2的条件下层合将切割成圆形形状的管芯接合膜转移到所生产的切割胶带上,从而生产切割管芯接合膜。
实施例2
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约9.3g二甲基蒽和0.43g异丙基噻吨酮。
实施例3
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约18.32g二甲基蒽和约0.42g异丙基噻吨酮。
实施例4
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于,在切割胶带的生产中,使用约1.1g三乙基甲硅烷基乙炔基-并五苯(TCI)代替二甲基蒽并使用约0.43g异丙基噻吨酮。
实施例5
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于,在切割胶带的生产中,使用约3.60g三乙基甲硅烷基乙炔基-并五苯(TCI)代替二甲基蒽并使用约0.43g异丙基噻吨酮。
实施例6
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约18.32g二甲基蒽和0.42g基于蒽的光敏剂。
比较例1
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中不使用二甲基蒽和异丙基噻吨酮。
比较例2
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约0.3g二甲基蒽和约0.3g异丙基噻吨酮。
比较例3
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于,在切割胶带的生产中,使用1.1g三乙基甲硅烷基乙炔基-并五苯(TCI)代替二甲基蒽并且不使用异丙基噻吨酮。
比较例4
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约25g二甲基蒽和约0.43g异丙基噻吨酮。
比较例5
以与实施例1中相同的方式生产切割管芯接合膜,不同之处在于在切割胶带的生产中使用约18.3g二甲基蒽和约0.42g基于萘的光敏剂。
测试例
对于实施例和比较例的切割管芯接合膜,根据以下描述的方法对各管芯接合膜的物理特性进行评估,并且评估结果示于下表1和2中。
[测试例1:粘合力的测量]
将实施例和比较例中生产的切割管芯接合膜切割成25mm的宽度,从而制备用于测量粘合力的样品。
对于制备的样品中的每一者,使用质构分析仪(TA Instrument)测量以300mm/分钟的剥离速度和180°的剥离角度从切割胶带上剥离管芯接合膜的力(gf/英寸)。根据该方法,测量初始粘合力并且测量用UV光以150mJ/cm2的剂量(光照密度:70mW/cm2)照射切割胶带的基础表面之后的粘合力。
为了模拟氧暴露条件,将制备的样品中的每一者剥离,然后用UV光以150mJ/cm2的剂量(光照密度:70mW/cm2)照射切割胶带的基础表面。然后,将切割胶带和管芯接合膜彼此层合并测量它们之间的粘合力。测量结果示于下表1和2中。
[测试例2:粘合力的降低率的测量]
基于测试例1中获得的初始粘合力和在氧暴露条件下的粘合力,计算粘合力的降低率。计算结果示于下表1和2中。
[测试例3:拾取性能的评估和100%拾取的针销高度的测量]
在将实施例和比较例中每一者生产的切割管芯接合膜的离型膜剥离之后,在70℃的温度下将管芯接合表面安装在镜面晶片(8英寸;35μm厚度)上,然后在下述条件下进行切割,使得芯片尺寸为13.3mm×9.1mm。
此后,对于各个经切割的样品,用UV光以150mJ/cm2的剂量(光照密度:70mW/cm2)照射切割胶带的基础表面,然后将切割胶带剥离并再次层合。其后,使用低温室和热收缩装置进行扩展过程,从而制备拾取测量样品。
对于所制备的样品,使用SPA-400(SHINKAWA)在下述条件下进行拾取,并且结果示于下表1和2中。
具体地,关于用于评估芯片拾取性能的标准,在评估中测量所有单个芯片均被拾取时的针销高度,并根据以下标准进行评估:O:在0.2mm或更小的针销高度下所有(100%)芯片均被拾取(管芯从晶片上剥离);和X:不满足以上条件。此外,测量作为100%芯片被拾取时的针销高度的100%拾取的针销高度。
-切割条件-
仪器:DFD-6361(DISCO)
刀片类型:27HEBB(DISCO)
切割刀片高度(切割深度):80μm
切割速度:15mm/秒
刀片转速:45000rpm
-拾取条件-
仪器:SPA-400(SHINKAWA)
扩展高度:3mm
针数:10
针上冲高度:0.2mm
针上冲速度:10mm/秒
[表1]
[表2]
如上表1和2中所示,可以看出,在氧暴露条件下UV照射之后实施例1至6中每一者的粘合力的降低率显著高于比较例1的粘合力的降低率。因此,可以看出,由于粘合剂层还包含单线态氧清除剂和光敏剂,因此通过减轻氧抑制现象改善了拾取性能。
可以看出,在氧暴露条件下UV照射之后实施例1至6中每一者的粘合力的降低率显著高于比较例3的粘合力的降低率。因此,可以看出,由于粘合剂层包含单线态氧清除剂和光敏剂二者,因此通过减轻氧抑制现象改善了拾取性能。
可以看出,在氧暴露条件下UV照射之后实施例1至3中每一者的粘合力的降低率显著高于比较例2和4的粘合力的降低率。因此,可以看出,由于粘合剂层包含0.5重量份至20.0重量份的单线态氧清除剂,因此进一步减轻了氧抑制现象。
可以看出,当在氧暴露条件下UV照射之后进行芯片拾取时,与在比较例5的情况下的100%拾取的针销高度相比,在实施例1至6中每一者的情况下的100%拾取的针销高度降低。这表明,通过减轻氧抑制现象,在实施例1至6中每一者的情况下的拾取性能得到改善。此外,确定了当使用不是本发明的光敏剂的基于萘的光敏剂时,拾取性能劣化。
尽管以上已经参照有限的实施方案描述了本发明,但是本发明不限于这些实施方案。本领域技术人员将理解,在不脱离本发明和所附权利要求书及其等同方案的技术精神的情况下,可以进行各种修改和变化。
Claims (11)
2.根据权利要求1所述的粘合剂组合物,其中所述粘结剂包括玻璃化转变温度为-58℃至-28℃的基于(甲基)丙烯酸酯的树脂。
3.根据权利要求2所述的粘合剂组合物,其中所述基于(甲基)丙烯酸酯的树脂包含基于(甲基)丙烯酸酯的单体与含可交联官能团的单体的共聚物。
4.根据权利要求1所述的粘合剂组合物,其中所述单线态氧清除剂为选自以下的一者:二甲基蒽、二丁基蒽、三乙基甲硅烷基乙炔基-并五苯、二苯基呋喃及其组合。
5.根据权利要求1所述的粘合剂组合物,其中基于100重量份的所述粘结剂,所述光敏剂以0.1重量份至1.0重量份的量包含在内。
6.根据权利要求1所述的粘合剂组合物,其中所述光引发剂为选自以下的一者:苯偶姻及其烷基醚、苯乙酮、蒽醌、噻吨酮、缩酮、二苯甲酮、α-氨基苯乙酮、酰基氧化膦、肟酯及其组合。
7.根据权利要求1所述的粘合剂组合物,其中所述粘合剂组合物还包含选自固化剂、溶剂及其混合物中的一者。
8.一种切割胶带,包括:
基础膜;和设置在所述基础膜的至少一个表面上的粘合剂层,
其中所述粘合剂层包含根据权利要求1至7中任一项所述的用于切割胶带的粘合剂组合物。
9.根据权利要求8所述的切割胶带,其中相对于所述粘合剂层的初始粘合力,所述粘合剂层在氧暴露条件下UV照射之后的粘合力的降低率为20%至80%。
10.根据权利要求8所述的切割胶带,其中所述基础膜为选自以下的一种聚合物膜:聚酯膜、聚碳酸酯膜、聚氯乙烯膜、聚四氟乙烯膜、聚丁烯膜、聚丁二烯膜、氯乙烯共聚物膜、乙烯-乙酸乙烯酯共聚物膜、乙烯-丙烯共聚物膜和乙烯-丙烯酸烷基酯共聚物膜。
11.根据权利要求8所述的切割胶带,其中所述基础膜为聚烯烃膜。
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