TWI532807B - 切割膜黏著層組成物、切割膜、切割晶粒接合膜、切割半導體晶圓之方法 - Google Patents

切割膜黏著層組成物、切割膜、切割晶粒接合膜、切割半導體晶圓之方法 Download PDF

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TWI532807B
TWI532807B TW103143571A TW103143571A TWI532807B TW I532807 B TWI532807 B TW I532807B TW 103143571 A TW103143571 A TW 103143571A TW 103143571 A TW103143571 A TW 103143571A TW I532807 B TWI532807 B TW I532807B
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group
dicing
adhesive
film
adhesive layer
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TW103143571A
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TW201529785A (zh
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金榮國
金思拉
金熹正
曺正鎬
李光珠
金丁鶴
南承希
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Ｌｇ化學股份有限公司
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Publication of TWI532807B publication Critical patent/TWI532807B/zh

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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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Description

切割膜黏著層組成物、切割膜、切割晶粒接合膜、 切割半導體晶圓之方法
本發明是關於一種切割膜的黏著層形成用組成物及切割膜。
一般而言，製造半導體晶片之方法包含在晶圓上形成微圖案，且將晶圓拋光以便滿足最終裝置及封裝之標準。
封裝過程包含：檢測半導體晶片之缺陷之晶圓檢測過程；切削晶圓以分成個別晶片之切割過程；將分開之晶片附接至引線框架或電路膜之安裝板之晶粒接合過程；使用電連接構件(諸如導線)將裝備於半導體晶片上之晶片墊與引線框架或電路膜之電路圖案連接之線接合過程；用封裝物覆蓋外部以便保護半導體晶片之內部電路及其他組件之模製過程；切削擋隔桿連接引線之修整過程；使引線彎曲成所需形狀之成型過程；以及針對完成之封裝之檢測缺陷檢測成品之過程，以及其類似過程。
在切割過程中，使用金剛石砂輪及其類似物將晶圓切至預定厚度。本文中，為了固定晶圓，在適當條件下將切割膜層壓至晶圓之背側，且隨後進行所述過程。為了將經切割之個別晶片附接至電路板，使用晶粒接合膜(接合膜)。
同時，切割過程包含以下步驟：用切割刀切削半導體晶圓，將UV照射至半導體晶圓之基底膜，以及拾取藉由切削半導體晶圓分開之個別晶片，但存在膜之間的固定出現在拾取過程期間，且由於膜之間的過度剝落強度，拾取晶片之成功率降低或在拾取期間產生晶片裂紋之問題。
解供一種切割膜的黏著層形成用組成物以便提供一種切割晶粒接合膜，所述切割晶粒接合膜可防止切割過程中膜之間的固定以增加拾取成功率，且展示相對較高晶粒剪切強度(shear strength)以防止因黏著強度退化所致之分層。
亦提供一種使用上文說明之切割膜的黏著層形成用組成物之切割膜。
亦提供一種包含所述切割膜之切割晶粒接合膜。
亦提供一種使用所述切割膜切割半導體晶圓之方法。
本發明之一例示性實施例提供一種切割膜的黏著層形成用組成物，其包括：包含至少一個反應性官能基之矽化合物油、黏著黏合劑以及光起始劑，其中包含至少一個反應性官能基之矽 化合物油與黏著黏合劑之重量比為0.01%至4.5%。
反應性官能基可包含至少一個由以下所構成的族群中選出之官能基：羥基、甲醇基(carbinol group)、環氧基、氨基(amino group)、巰基(thiol group)以及羧基。
包含至少一個反應性官能基之矽化合物油可包含至少一種矽化合物以及有機溶劑，其中所述矽化合物是選自由以下所構成的族群：以下化學式1之矽化合物、以下化學式2之矽化合物以及經聚醚改質之羥基官能聚二甲基矽氧烷(polyether modified hydroxy functional polydimethylsiloxane)。
在化學式1中，R1獨立地為碳數為1至3之烷基，R2為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基，m為0至500之整數，且n為1至500之整數。
在化學式2中，R1獨立地為碳數為1至3之烷基；R3及R4中之至少一個為碳數為1至3之烷基，且另一個為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基，或R3及R4獨立地為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基 或羧基；且p為0至500之整數。
有機溶劑選自醇、醚、乙酸酯或酮。
包含至少一個反應性官能基之矽化合物油在25℃下之黏度可為10平方毫米/秒至20,000平方毫米/秒。
黏著黏合劑可包含未經取代或經至少一個由羥基、異氰酸酯基、乙烯基以及(甲基)丙烯酸酯基所構成的族群中選出之官能基取代之(甲基)丙烯酸酯聚合物或(甲基)丙烯酸酯共聚物。
黏著黏合劑可包含添加有丙烯酸酯之嵌入黏著黏合劑，所述丙烯酸酯具有連接至(甲基)丙烯酸酯樹脂主鏈之碳-碳雙鍵。舉例而言，可使用添加有1重量%至45重量%(甲基)丙烯酸酯官能基作為連接至(甲基)丙烯酸酯基底樹脂主鏈之側鏈的聚合物樹脂作為嵌入黏著黏合劑。
黏著黏合劑可包含重量平均分子量為100,000至1,500,000之聚合物。
光起始劑可包含至少一種由以下所構成的族群中選出之物質：安息香及其烷基醚(alkylether)、苯乙酮、蒽醌(anthraquinone)、硫代黃嘌呤(thioxanthine)、二苯甲酮、α-胺基-苯乙酮、醯基膦氧化物(acylphosphine oxide)以及肟酯(oxime ester)。
以100重量份的黏著黏合劑計，組成物可包含0.01重量份至8重量份或0.02重量份至5重量份的光起始劑。
切割膜的黏著層形成用組成物可更包含固化劑。
固化劑可包含至少一種由以下所構成的族群中選出之物質：異氰酸酯化合物、氮丙啶化合物(aziridine compound)、環氧 化合物以及金屬螯合化合物。
以100重量份的黏著黏合劑計，切割膜的黏著層形成用組成物可包含0.1重量份至30重量份的固化劑。
亦提供一種包含基底膜及形成於所述基底膜之至少一側上之黏著層的切割膜，其中黏著層包含上文說明之切割膜的黏著層形成用組成物。
基底膜之厚度可為10微米至200微米，且黏著層之厚度可為0.5微米至50微米。
亦提供一種包含切割膜及形成於所述切割膜之至少一側上之接合層的切割晶粒接合膜。
亦提供一種切割半導體晶圓之方法，包含以下步驟：藉由部分地處理包含切割晶粒接合膜及層壓於所述切割晶粒接合膜之至少一側上之晶圓的半導體晶圓來進行預處理，以使得其完全被切削或其可被切削；在預處理步驟之後擴展半導體晶圓；以及將UV照射至經擴展之半導體晶圓之基底膜，且拾取藉由切削半導體晶圓分開之個別晶片。
提供一種切割膜的黏著層形成用組成物、一種包含含有所述組成物的黏著層之切割膜、一種包含所述切割膜之切割晶粒接合膜以及一種使用所述切割晶粒接合膜切割半導體晶圓之方法。所述切割膜的黏著層形成用組成物提供一種切割晶粒接合膜，其可防止切割過程中膜之間的固定以增加拾取成功率，且展示相對較高的晶粒剪切強度，以防止因黏著強度降級所致之分層。
下文將詳細說明切割膜、切割晶粒接合膜以及切割根據特定實施例之半導體晶圓之方法。
根據本發明之一個實施例，提供一種切割膜的黏著層形成用組成物，包含：包含至少一個反應性官能基之矽化合物油；黏著黏合劑；以及光起始劑，其中包含至少一個反應性官能基之矽化合物油與黏著黏合劑之重量比為0.01%至4.5%。
先前，由於在切割過程中拾取過程期間膜之間的固定及過度的剝落強度，存在拾取晶片之成功率可能降低之問題。
因此，本發明者經由實驗證實若使用包含自包含特定含量之矽化合物油之組成物形成之黏著層的切割膜，其中所述矽化合物油包含至少一個反應性官能基，則可防止膜之間的固定且可降低膜之間的剝落強度以改良拾取晶片之成功率，可展示相對較高晶粒剪切強度以防止因黏著強度退化所致之分層，且可改良半導體製造方法之可靠性且完成本發明。
包含於包含至少一個反應性官能基之矽化合物油中的包含至少一個反應性官能基之矽化合物對有機物質或無機物質具有可釋放性(releasablity)，且二甲基矽氧烷部分之烷基充當黏著物表面之非極性分子，且因此矽化合物對極性黏著物具有可釋放性及滑動特性。因此，切割膜的黏著層形成用組成物可向接合層(晶粒接合膜)提供較高可釋放性及滑動特性，以促進在UV固化之 後分層。
包含至少一個反應性官能基之矽化合物油與黏著黏合劑之重量比可為0.01%至4.5%或0.1%至2%。
若包含至少一個反應性官能基之矽化合物油與黏著黏合劑之重量比過低，則自根據以上實施例之切割膜的黏著層形成用組成物製備之切割膜之黏著層在UV照射之前/之後可具有顯著增加之剝落強度，例如顯著增加之180度剝落強度及黏力，以及SUS剝落強度。
若包含至少一個反應性官能基之矽化合物油與黏著黏合劑之重量比過高，但自根據以上實施例之切割膜的黏著層形成用組成物製備之切割膜之黏著層之剝落強度可在一些程度上降低，則黏著層之晶粒剪切強度可顯著降低以產生因黏著強度退化所致之分層，且因此在半導體製造方法中可靠性可能降低。
同時，包含於矽化合物油中之矽可包含至少一個反應性官能基或經至少一個反應性官能基取代，且反應性官能基之特定實例可包含至少一個由以下所構成的族群中選出之官能基：羥基、甲醇基、環氧基、氨基、巰基以及羧基。
包含至少一個反應性官能基之矽化合物油包含矽化合物，其包含至少一個反應性官能基；以及有機溶劑。
特定言之，包含至少一個反應性官能基之矽化合物油可包含：至少一種由以下化學式1之矽化合物、以下化學式2之矽化合物以及經聚醚改質之羥基官能聚二甲基矽氧烷所構成的族群中選出之矽化合物；以及有機溶劑。
在化學式1中，R1獨立地為碳數為1至3之烷基，R2為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基，m為0至500之整數，且n為1至500之整數。
在化學式2中，R1獨立地為碳數為1至3之烷基；R3及R4中之至少一個為碳數為1至3之烷基，且另一個為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基，或R3及R4獨立地為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基；且p為0至500之整數。
經聚醚改質之羥基官能聚二甲基矽氧烷之特定實例可包含(但不限於)市售產品，諸如畢克-希爾克林(BYK-SILCLEAN)3720及其類似者。
包含至少一個官能基之矽化合物油中所包含之有機溶劑之特定實例可包含(但不受特別限於)醇、醚、乙酸酯或酮。
包含至少一個反應性官能基之矽化合物油在25℃下之黏度可為10平方毫米/秒至20,000平方毫米/秒。
同時，可在無特別限制之情況下使用已知用於形成切割膜之黏著層的聚合物樹脂作為黏著黏合劑，且例如可使用經特定反應性官能基取代之聚合物樹脂或具有包含反應性官能基之主鏈之聚合物樹脂。
特定言之，黏著黏合劑可包含未經取代或經至少一個由羥基、異氰酸酯基、乙烯基以及(甲基)丙烯酸酯基所構成的族群中選出之官能基取代之(甲基)丙烯酸酯聚合物或(甲基)丙烯酸酯共聚物。
黏著黏合劑可為添加有丙烯酸酯之嵌入黏著黏合劑，所述丙烯酸酯具有連接至(甲基)丙烯酸酯樹脂主鏈之碳-碳雙鍵。舉例而言，可使用添加有1重量%至45重量%(甲基)丙烯酸酯官能基作為連接至(甲基)丙烯酸酯基底樹脂主鏈之側鏈的聚合物樹脂作為嵌入黏著黏合劑。
黏著黏合劑可包含重量平均分子量為100,000至1,500,000之聚合物樹脂。
特定言之，未經取代或經至少一個由羥基、異氰酸酯基、乙烯基以及(甲基)丙烯酸酯基所構成的族群中選出之官能基取代之(甲基)丙烯酸酯聚合物或(甲基)丙烯酸酯共聚物的重量平均分子量可為100,000至1,500,000。
如本文所用，(甲基)丙烯酸酯意謂包含丙烯酸酯與(甲基)丙烯酸酯。
(甲基)丙烯酸酯聚合物或(甲基)丙烯酸酯共聚物之實例可包含(甲基)丙烯酸酯單體與含有可交聯官能基之單體之聚合物或共聚物。
本文中，(甲基)丙烯酸酯單體之實例可包含(甲基)丙烯酸烷基酯，且更特定言之，具有C1-20烷基之單體之實例可包含(甲基)丙烯酸戊酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸己酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸十二烷基酯或(甲基)丙烯酸癸酯或其兩種或多於兩種類別之混合物。因為使用烷基數較高之單體，所以最終共聚物之玻璃轉化溫度降低，且因此可根據所需玻璃轉化溫度選擇適當單體。
含有可交聯官能基之單體之實例可包含含有羥基之單體、含有羧基之單體、含氮單體或其兩種或多於兩種類別之混合物。含有羥基之化合物之實例可包含(但不限於)(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯以及其類似者，含有羧基之化合物之實例可包含(但不限於)(甲基)丙烯酸及其類似者，且含氮單體之實例可包含(但不限於)(甲基)丙烯腈、N-乙烯吡咯啶酮、N-乙烯己內醯胺以及其類似者。就諸如相容性及其類似者之其他效能改良而言，(甲基)丙烯酸酯系樹脂可更包含乙酸乙烯酯、苯乙烯、含有丙烯腈碳-碳雙鍵之低分子量化合物以及其類似者。
添加有丙烯酸酯之嵌入黏著黏合劑之重量平均分子量可為100,000至1,500,000，所述丙烯酸酯具有連接至(甲基)丙烯酸酯樹脂主鏈之碳-碳雙鍵。
若包含於黏著黏合劑中之聚合物樹脂之重量平均分子量過低，則根據以上實施例之切割膜的黏著層形成用組成物之可塗佈性或內聚性可退化，且當使自所述組成物形成之黏著層分層時，殘餘物可保留在黏著物中或黏著層可斷裂。
若包含於黏著黏合劑中之聚合物樹脂之重量平均分子量過高，則根據以上實施例之切割膜的黏著層形成用組成物之UV固化可不充分出現，且因此自所述組成物形成之黏著層之剝落強度可能不會降低至足以降低拾取成功率。
切割膜的黏著層形成用組成物可更包含UV可固化化合物。
UV可固化化合物之類別不受特別限制，且例如可使用重量平均分子量為約500至300,000之多官能化合物(例如多官能丙烯酸氨基甲酸酯、多官能丙烯酸酯單體或寡聚物以及其類似者)。所屬領域中具通常知識者可易於根據所需用途選擇適當化合物。
以100重量份的以上說明之黏著黏合劑計，UV可固化化合物之含量可為5重量份至400重量份，較佳10重量份至200重量份。若UV可固化化合物之含量小於5重量份，則在固化之後黏著性降低可能不充分且因此拾取可能退化，且若其大於400重量份，則在UV照射之前黏著劑之內聚性可能不足，或存在可能不易於實現離型膜分層及其類似者之問題。
包含於切割膜的黏著層形成用組成物中之光起始劑之特定實例不受特別限制，且可在無特別限制之情況下使用通常已知之光起始劑。作為實例，作為光起始劑，可使用安息香及其烷基醚、苯乙酮、蒽醌、硫代黃嘌呤、二苯甲酮、α-胺基苯乙酮、醯基膦氧化物、肟酯或其兩種或多於兩種類別之混合物。
可考慮製備之黏著層之物理特性及特徵以及使用之黏著黏合劑之類別及特徵以及其類似者確定光起始劑之量，且例如以100重量份黏著黏合劑計，切割膜的黏著層形成用組成物可包含 0.01重量份至5重量份光起始劑。
切割膜的黏著層形成用組成物可更包含固化劑。當將切割膜的黏著層形成用組成物塗佈於基底膜上時，固化劑可在室溫下或在30℃至50℃之溫度下與黏著黏合劑之反應性基團反應以形成交聯。包含於固化劑中之特定反應性基團可保持未反應，且可在拾取之前經由UV照射進一步交聯，因此降低黏著層之黏著強度。
固化劑可包含至少一種由以下所構成的族群中選出之物質：異氰酸酯化合物、氮丙啶化合物、環氧化合物以及金屬螯合化合物。
可考慮製備之黏著層之物理特性及特徵以及使用之黏著黏合劑之類別及特徵以及其類似者確定固化劑之量，且例如以100重量份黏著黏合劑計，切割膜的黏著層形成用組成物可包含0.1重量份至30重量份固化劑。
根據另一實施例，提供一種包含基底膜及形成於基底膜之至少一側上之黏著層之切割膜，其中黏著層包含根據以上說明之實施例之切割膜的黏著層形成用組成物。
基底膜之類別不受特別限制，且例如可使用本領域中已知之塑膠膜或金屬箔以及其類似者。舉例而言，基底膜可包含低密度聚乙烯、直鏈聚乙烯、中等密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、聚丙烯無規共聚物、聚丙烯嵌段共聚物、均聚丙烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、乙烯-甲基丙烯酸共聚物、乙烯-甲基丙烯酸甲酯共聚物、乙烯-離聚物共聚物、乙烯-乙烯醇共聚物、聚丁烯、苯乙烯共聚物或其兩種或多於兩種類別之 混合物。包含兩種或多於兩種類別之聚合物之混合物的基底膜包含兩個或多於兩個膜之堆疊結構，所述膜分別包含以上說明之聚合物；與膜之單層，所述膜包含兩種或多於兩種類別之以上說明之聚合物。
基底膜之厚度不受特別限制，且通常其可形成為10微米至200微米，較佳50微米至180微米之厚度。若厚度小於10微米，則在切割過程中切削深度之控制可能不穩定，且若其大於200微米，則可能在切割過程中產生大量毛邊，或可能降低伸長率，且因此可能不會精確實現擴展過程。
基底膜視需要可經受常見物理或化學處理，諸如消光處理、電暈放電、底塗劑處理、交聯以及其類似處理。
黏著層之厚度可為0.5微米至50微米，或5微米至30微米。
包含於黏著層中之切割膜的黏著層形成用組成物之細節包含以上說明之所有內容。
根據本發明之又一實施例，提供一種包含切割膜之切割晶粒接合膜，及一種形成於切割膜之至少一側上之接合層。
切割膜之細節包含以上說明之所有內容。
接合層可包含環氧樹脂、低彈性高分子量樹脂以及用於接合層之固化劑。環氧樹脂可包含本領域中已知之用於黏著劑之常見環氧樹脂，且例如可使用分子中含有兩個或多於兩個環氧基且重量平均分子量為100至5000之環氧樹脂。
環氧樹脂可經由固化過程形成硬交聯結構以展示突出的黏著特性、耐熱性以及機械強度。
更特定言之，尤其較佳使用環氧當量為100至1000之環氧樹脂作為環氧樹脂。若環氧樹脂之環氧當量小於100，則交聯密度可過高，且因此接合膜可展示一般較硬特性，且若環氧樹脂之環氧當量大於1000，則耐熱性可退化。
環氧樹脂之特定實例可包含(但不限於)雙官能環氧樹脂，諸如雙酚A環氧樹脂或雙酚F環氧樹脂以及其類似者；或具有3個或多於3個官能基之多官能環氧樹脂，諸如甲酚酚醛清漆環氧樹脂、苯酚酚醛清漆環氧樹脂、四官能環氧樹脂、聯苯型環氧樹脂、三苯酚甲烷型環氧樹脂、烷基改質之三苯酚甲烷型環氧樹脂、萘型環氧樹脂、二環戊二烯型環氧樹脂、二環戊二烯改質之苯酚型環氧樹脂以及其類似者，或其兩種或多於兩種類別之混合物。
較佳使用雙官能環氧樹脂與多官能環氧樹脂之混合樹脂作為環氧樹脂。
『多官能環氧樹脂』意謂具有3個或多於3個官能基之環氧樹脂。亦即，雙官能環氧樹脂一般具有極佳可撓性及高溫流動性以及其類似者，但具有較差耐熱性及固化速度，而具有3個或多於3個官能基之多官能環氧樹脂由於較高交聯密度故具有較快固化速度且展示突出的耐熱性，但具有較差可撓性及流動性。因此，藉由適當混合兩種類型之樹脂，可在切割過程中抑制晶片分散或毛邊發生，同時控制接合層之彈性及黏性特性。
低彈性高分子量樹脂可在黏著劑中形成軟區段以在高溫下獲得應力鬆弛。可使用任何樹脂作為高分子量樹脂，只要其在與環氧樹脂摻合以形成膜時不誘導斷裂，可在形成交聯結構之後 展示黏彈性且具有與其他組分之極佳相容性及儲存穩定性即可。
特定類別之低彈性高分子量樹脂不受特別限制，只要其滿足以上說明之特性即可，但可使用例如聚醯亞胺、聚醚醯亞胺、聚酯醯亞胺、聚醯胺、聚醚碸、聚醚酮、聚烯烴、聚氯乙烯、苯氧基、反應性丙烯腈丁二烯橡膠、(甲基)丙烯酸酯系樹脂以及其類似者或其兩種或多於兩種類別之混合物。
(甲基)丙烯酸酯系樹脂之特定實例可包含丙烯基系共聚物，其包含(甲基)丙烯酸及其衍生物，其中(甲基)丙烯酸及其衍生物之實例可包含(甲基)丙烯酸；含有C1-12烷基之(甲基)丙烯酸烷基酯，諸如(甲基)丙烯酸甲酯或(甲基)丙烯酸乙酯以及其類似者；(甲基)丙烯腈或(甲基)丙烯醯胺以及其他可共聚單體。
(甲基)丙烯酸酯系樹脂可包含一種類別或兩種或多於兩種類別之官能基，諸如縮水甘油基、羥基、羧基、氨基以及其類似基團，其可藉由使諸如(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸羥酯、(甲基)丙烯酸羥乙酯、羧基(甲基)丙烯酸酯或其類似物之單體共聚來引入。
可包含於黏著劑組成物中之固化劑不受特別限制，只要其可與環氧樹脂及/或低彈性高分子量樹脂反應形成交聯結構即可。舉例而言，可使用能夠與兩種組分反應形成交聯結構之固化劑且此類固化劑分別與黏著劑中之軟區段及硬區段形成交聯結構以改良耐熱性，且同時在其界面處充當兩個區段之交聯劑以改良半導體封裝之可靠性。
接合層之厚度可為(但不特別限於)例如1微米至100微米，或3微米至50微米。
根據另一實施例，提供一種半導體晶圓，其包含附接至一側之切割晶粒接合膜之接合層，其中將切割晶粒接合膜之基底膜固定至晶圓環框架。
可藉由在0℃至180℃之溫度下將切割晶粒接合膜之接合部分層壓至半導體晶圓之背側且將基底膜固定至晶圓環框架來製備以上半導體晶圓。
根據本發明之另一實施例，提供一種半導體裝置，包含：佈線板；用於半導體之以上說明之接合膜的接合層，其形成於佈線板之晶片裝載側上；以及裝載於接合層上之半導體晶片。
以上半導體裝置可藉由以下過程製備。特定言之，使用切割設備將具有與其附接之以上說明之切割晶粒接合膜的半導體晶圓完全切削以分開個別晶片。其後，藉由UV照射或加熱以及其類似者將黏著部分固化。藉由UV或熱固化之黏著劑具有降低之黏著強度，因此促進在以下過程中拾取晶片。本文中視需要進行拉緊切割晶粒接合膜之擴展過程，以便擴展晶片之間的距離且在接合部分及黏著部分之界面處產生位錯，因此促進拾取。
若在以上條件下進行晶片之拾取，則半導體晶圓及接合部分與黏著部分分層以獲得僅具有與其附接之接合層的晶片。將具有接合層之所得晶片附接至半導體之基板。附接晶片之溫度通常為100℃至180℃，附接之時間為0.5秒至3秒，且附接之壓力為0.5公斤力/平方公分至2公斤力/平方公分。
在進行以上過程之後，進行線接合過程及模製過程以獲得半導體裝置。在本發明中，特定言之，經由使晶粒接合之黏著強度及其類似者最佳化，可在晶粒接合之後不進行預固化過程的 情況下在線接合過程或模製過程中抑制晶片分層、滑動或傾斜以及其類似者。
製備半導體裝置之方法不限於以上過程，可包含任何過程且可改變過程之次序。舉例而言，過程可以UV固化、切割以及擴展之次序或以切割、擴展以及UV固化之次序進行。在附接晶片之後，可進一步進行加熱或冷卻過程。
同時，根據本發明之另一實施例，提供一種切割半導體晶圓之方法，包含以下步驟：藉由部分處理包含以上切割晶粒接合膜及層壓於切割晶粒接合膜之至少一側上之晶圓的半導體晶圓來進行預處理以使得其完全切削或其可切削；在預處理步驟之後擴展半導體晶圓；以及將UV照射至擴展之半導體晶圓之基底膜，且拾取藉由切削半導體晶圓分開之個別晶片。
切割晶粒接合膜之細節包含以上說明之所有內容。
除切割方法之步驟之細節外，可在無特別限制之情況下使用用於切割半導體晶圓之通常已知設備、切割方法以及其類似者。
藉由使用包含切割膜之切割晶粒接合膜，可在半導體晶圓之切割過程期間使毛邊之發生最小化以防止污染半導體晶片且改良半導體晶片之可靠性及壽命。
本發明之特定實施例將詳細說明於以下實例中。然而，這些實例僅為了說明本發明之特定實施例，且本發明之範疇不限於此。
實例1
以100重量份光可固化黏著黏合劑樹脂計，將2重量份 異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、0.5重量份矽化合物油X-22-4309(信越株式會社(Shin-Etsu Co.Ltd.))以及1重量份作為光起始劑之達若可蒂波(DAROCUR TPO)混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
實例2
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、0.5重量份矽化合物油KF-1001(信越株式會社)以及1重量份作為光起始劑之達若可蒂波混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
實例3
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、0.5重量份矽化合物油X-KF-8008(信越株式會社)以及1重量份作為光起始劑之達若可蒂波混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
實例4
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、0.5重量份矽化合物油畢克-希爾克林以及1重量份作為光起始劑之達若可蒂波混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
比較實例1
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)及1重量份作為光起始劑之達若可蒂波混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
比較實例2
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、5重量份矽化合物油X-22-4039(信越株式會社)以及1重量份作為光起始劑之達若 可蒂波混合以製備UV可固化黏著劑組成物。使用添加有20重量%丙烯酸酯官能基作為連接至丙烯酸系基底樹脂主鏈之側鏈的聚合物樹脂(Mw 300,000)作為光可固化黏著黏合劑樹脂。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
比較實例3
以100重量份光可固化黏著黏合劑樹脂計，將2重量份異氰酸酯系固化劑(多官能異氰酸酯寡聚物)、0.5重量份矽化合物油L-7500(史威特公司(Silvet Co.))以及1重量份作為光起始劑之達若可蒂波混合以製備UV可固化黏著劑組成物。
將UV可固化黏著劑組成物塗佈於100微米厚聚烯烴膜之一側上且乾燥以製備包含10微米厚黏著層之切割膜。
實驗實例
如下量測在實例1至實例4及比較實例1至比較實例3中製備之切割膜之剝落強度、黏力以及拾取成功率，且結果顯示於以下表1及表2中。
1.量測晶粒接合膜/切割膜之間的180度剝落強度(在UV固化之前/之後)
為了量測晶粒接合膜與PSA層之間的剝落強度，在室溫下將接合膜與切割膜層壓，使其靜置1小時，製造寬度為25毫米之樣品，且在300毫米/分鐘之速度下量測180度剝落強度，且另外量測在UV固化之後的值。每一份樣品進行三次或多於三次量測，且記錄平均值。
2.量測SUS/切割膜之間的90度剝落強度(在UV固化之前)
製備寬度為25毫米之切割膜，且將其附接至SUS 304之黏著物。在固化1小時之後，在300毫米/分鐘之速度下量測90度剝落強度。每一份樣品進行三次或多於三次量測，且記錄平均值。
3.黏性測試(在UV固化之前/之後)
將切割膜放置於板上以使得黏著層面朝上，且使用直徑為1吋之球型探針量測黏力。本文中，施加至探針之力為800公克力，接觸時間為0.01秒，撕掉探針之量測速度為1毫米/秒，且用於量測之設備為質構儀(Texture Analyzer)。
4.量測拾取成功率
在70℃下將自實例及比較實例之切割膜製備之切割晶粒接合膜與晶圓層壓。隨後，在以下條件下使用切割設備(由內翁公司(NEON Company)製造)進行切割過程，且隨後在以下條件下將UV照射至切割膜側。其後，用晶粒接合機(新川株式會社(Shinkawa Co.Ltd.))拾取200個晶片，且量測未拾取晶片之數目且以百分比形式記錄。
[切割條件]
刀片：27HEDD
刀片旋轉速度：40,000轉/分鐘
速度：30毫米/秒
晶片尺寸：10毫米×10毫米
切削深度：70微米
[UV照射條件]
燈：金屬鹵化物型
照明強度：70毫瓦/平方公分(用UV計量測)
照射量：200毫焦/平方公分或多於200毫焦/平方公分(用UV計量測)
[拾取條件]
擴展：4毫米
針高度：0.15毫米
拾取強度：100公克力
5.晶粒剪切強度
將厚度為500微米之塗佈有二氧化物層之晶圓切成5毫米×5毫米之尺寸，且在60℃下與切割晶粒接合膜層壓，隨後UV照射以移除切割膜且切削以僅留下晶片尺寸之接合膜。將5毫米×5毫米尺寸之上晶片放置於10毫米×10毫米尺寸之下晶片上，且隨後在130℃下於熱板上用2公斤力按壓2秒，隨後在125℃下固化1小時。將以上製造之測試件在175℃下固化2小時，且隨後在250℃下量測上晶片之晶粒剪切強度。
如表1及表2中所示，證實與在比較實例1中製備之切割膜相比，在實例1至實例4中製備之切割膜展示相對較低之UV固化之前/之後的180度剝落強度及黏力、相對較低之SUS剝落強度以及較高之拾取成功率。
此外，確認與在比較實例1至比較實例3中製備之切割膜相比，在實例1至實例4中製備之切割膜展示相對較高之晶粒剪切強度以防止因黏著強度降低所致之分層，因此抑制回焊裂紋且改良半導體製造方法之可靠性。

Claims (14)

  1. 一種切割膜的黏著層形成用組成物，包括：包括至少一個反應性官能基之矽化合物油；黏著黏合劑；以及光起始劑，其中包括至少一個反應性官能基之所述矽化合物油與所述黏著黏合劑之重量比為0.01%至4.5%，所述黏著黏合劑包含添加有丙烯酸酯之嵌入黏著黏合劑，所述丙烯酸酯具有連接至(甲基)丙烯酸酯樹脂主鏈之碳-碳雙鍵，包括至少一個反應性官能基之所述矽化合物油包括至少一矽化合物以及有機溶劑，其中所述矽化合物是選自由以下化學式1之矽化合物、以下化學式2之矽化合物所構成的族群： 其中在化學式1中，R1獨立地為碳數為1至3之烷基，R2為羥基、碳數為1至10之伸烷基醇、環氧基或巰基，m為0至500之整數，且n為1至500之整數， 其中在化學式2中，R1獨立地為碳數為1至3之烷基，R3及R4中之至少一個為碳數為1至3之烷基，且另一個為 碳數為1至10之伸烷基醇、環氧基或巰基，或R3及R4獨立地為羥基、碳數為1至10之伸烷基醇、環氧基、氨基、巰基或羧基；且p為0至500之整數。
  2. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中所述有機溶劑選自醇、醚、乙酸酯或酮。
  3. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中包括至少一個反應性官能基的所述矽化合物油在25℃下之黏度為10平方毫米/秒至20,000平方毫米/秒。
  4. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中所述黏著黏合劑是添加有1重量%至45重量%(甲基)丙烯酸酯官能基作為連接至(甲基)丙烯酸酯基底樹脂主鏈之側鏈的聚合物樹脂。
  5. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中所述黏著黏合劑包含重量平均分子量為100,000至1,500,000之聚合物樹脂。
  6. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中所述光起始劑包含至少一種由以下所構成的族群中選出之物質：安息香及其烷基醚、苯乙酮、蒽醌、硫代黃嘌呤、二苯甲 酮、α-胺基苯乙酮、醯基膦氧化物以及肟酯。
  7. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，其中以100重量份的所述黏著黏合劑計，所述組成物包括0.01重量份至8重量份的所述光起始劑。
  8. 如申請專利範圍第1項所述之切割膜的黏著層形成用組成物，更包括固化劑。
  9. 如申請專利範圍第8項所述之切割膜的黏著層形成用組成物，其中所述固化劑包含至少一種由以下所構成的族群中選出之物質：異氰酸酯化合物、氮丙啶化合物、環氧化合物以及金屬螯合化合物。
  10. 如申請專利範圍第8項所述之切割膜的黏著層形成用組成物，其中以100重量份的所述黏著黏合劑計，所述組成物包括0.1重量份至30重量份的所述固化劑。
  11. 一種切割膜，包括基底膜及形成於所述基底膜之至少一側上之黏著層，其中所述黏著層包括如申請專利範圍第1項所述之切割膜的黏著層形成用組成物。
  12. 如申請專利範圍第11項所述之切割膜，其中所述基底膜之厚度為10微米至200微米，且所述黏著層之厚度為0.5微米至50微米。
  13. 一種切割晶粒接合膜，包括如申請專利範圍第11項所述 之切割膜及形成於所述切割膜之至少一側上之接合層。
  14. 一種切割半導體晶圓之方法，包括以下步驟：藉由部分地處理包括如申請專利範圍第13項所述之切割晶粒接合膜及層壓於所述切割晶粒接合膜之至少一側上之晶圓的半導體晶圓來進行預處理，以使得其完全被切削或其可被切削；在所述預處理之後擴展所述半導體晶圓；以及將UV照射至經擴展的所述半導體晶圓之基底膜，且拾取藉由切削所述半導體晶圓分開之個別晶片。
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KR101089631B1 (ko) 2011-06-14 2011-12-06 주식회사 이녹스 반도체 패키지용 접착필름
JP6059631B2 (ja) * 2012-11-30 2017-01-11 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
WO2015093794A1 (ko) 2013-12-19 2015-06-25 주식회사 엘지화학 다이싱 필름 점착층 형성용 조성물 및 다이싱 필름

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JP2017504976A (ja) 2017-02-09
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US9540547B2 (en) 2017-01-10
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