CN102640277A - 粘合片及电子部件 - Google Patents

粘合片及电子部件 Download PDF

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Publication number
CN102640277A
CN102640277A CN2010800541765A CN201080054176A CN102640277A CN 102640277 A CN102640277 A CN 102640277A CN 2010800541765 A CN2010800541765 A CN 2010800541765A CN 201080054176 A CN201080054176 A CN 201080054176A CN 102640277 A CN102640277 A CN 102640277A
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Prior art keywords
methyl
adhesive layer
bonding sheet
mass parts
chip
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CN2010800541765A
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English (en)
Inventor
齐藤岳史
高津知道
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Denka Co Ltd
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Denki Kagaku Kogyo KK
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Publication of CN102640277A publication Critical patent/CN102640277A/zh
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Abstract

本发明提供粘合片以及使用该粘合片的电子部件，所述粘合片的芯片贴装薄膜具有导电性，且半导体芯片的稳定性以及拾取性优异。所述粘合片的构成为：在基材薄膜的一面设置有粘合层、并且在该粘合层上层叠有含有导电性填料的芯片贴装薄膜，所述粘合层是由相对于100质量份的（甲基）丙烯酸酯共聚物配混有0.5~20质量份的多官能异氰酸酯固化剂的粘合剂组合物形成的，所述（甲基）丙烯酸酯共聚物中含羧基单体的共聚比率低于0.5%。

Description

粘合片及电子部件
技术领域
本发明涉及粘合片以及使用该粘合片的电子部件。更详细而言，涉及在制造安装有半导体芯片的电子部件时的切割（dicing）工序以及芯片接合（die bonding）工序中所使用的粘合片。
背景技术
通常，在从半导体晶片（wafer）切下芯片的切割工序中，为了在切断时保护以及固定晶片并保持切断的芯片直至拾取工序，使用了切割用粘合片（例如，参照专利文献1）。另一方面，将所切下的半导体芯片安装在基板、引线框（lead frame）上或与其它半导体芯片层叠时，使用芯片接合（芯片贴装）薄膜。
另外，以往也提出了一种层叠型粘合片，所述层叠型粘合片是通过在粘合片上层叠芯片贴装薄膜，从而兼备切割用的粘合片的功能和将半导体芯片固定在引线框上的粘接剂的功能（例如，参照专利文献2~5）。
使用这种层叠型粘合片制造电子部件时，例如，将固定有半导体晶片的粘合片安装在环框上，利用切割刀切割半导体晶片。其后，将粘合片呈放射状扩大，扩展芯片间隔，拾取附着有芯片贴装薄膜的状态的半导体芯片，安装在基板、引线框等上。
现有技术文献
专利文献
专利文献1:日本特开2006-137816号公报
专利文献2:日本特开2006-049509号公报
专利文献3:日本特开2007-246633号公报
专利文献4:日本特开2010-74144号公报
专利文献5:日本特开2010-177699号公报
发明内容
发明要解决的问题
然而，如专利文献2~5所述的以往的粘合片为了赋予导电性而在芯片贴装薄膜（die attach film）中含有导电性填料时，有半导体芯片的保持性和拾取性降低的问题点。
这里，本发明的主要目的在于，提供芯片贴装薄膜具有导电性且半导体芯片的保持性和拾取性优异的粘合片，以及使用该粘合片的电子部件。
用于解决问题的方案
本发明的粘合片具备基材薄膜、和层叠在该基材薄膜的一面的粘合层、和层叠在该粘合层上且含有导电性填料的芯片贴装薄膜，前述粘合层含有100质量份（甲基）丙烯酸酯共聚物和0.5~20质量份多官能异氰酸酯固化剂，所述（甲基）丙烯酸酯共聚物的含羧基单体的共聚比率低于0.5%。
该粘合片的前述粘合层也可以进一步含有20~200质量份具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物、和0.1~10质量份有机硅改性丙烯酸类树脂。
另外，前述粘合层的厚度例如可以为20~50μm。
进而，作为前述导电性填料，例如可以使用银、铜、氮化硼或氧化铝的单一物质或混合物。
＜术语的说明＞
这里，单体单元表示来自于单体的结构单元。“份”和“%”以质量为基准。（甲基）丙烯酸酯为丙烯酸酯和甲基丙烯酸酯的总称。（甲基）丙烯酸等包含（甲基）的化合物等也同样，为名称中有“甲基”的化合物和没有“甲基”的化合物的总称。
本发明的电子部件为使用前述粘合片所制造的电子部件。
发明的效果
根据本发明，用于制造电子部件的粘合片能赋予芯片贴装薄膜导电性而不使半导体芯片的保持性及拾取性降低。
附图说明
图1的（a）~（d）为将本发明的第2实施方式的电子部件的制造方法按照其工序顺序表示的剖视图。
具体实施方式
以下，参照附图对用以实施本发明的方式进行详细说明。但本发明不受以下说明的实施方式的限制。
（第1实施方式）
首先，对本发明的第1实施方式的粘合片进行说明。本实施方式的粘合片的构成为：在基材薄膜的一面层叠有粘合层，在该粘合层上进一步层叠有芯片贴装薄膜。并且在芯片贴装薄膜中配混有导电性填料。另外，构成粘合层的粘合剂含有100质量份（甲基）丙烯酸酯共聚物、0.5~20质量份多官能异氰酸酯固化剂，且（甲基）丙烯酸酯共聚物中含羧基单体的共聚比率低于0.5%。
［基材薄膜］
对基材薄膜的材质没有特别的限制，例如可以由聚氯乙烯、聚对苯二甲酸乙二醇酯、乙烯-醋酸乙烯共聚物、乙烯-丙烯酸-丙烯酸酯、乙烯-丙烯酸乙酯共聚物、聚乙烯、聚丙烯、乙烯-丙烯酸共聚物、或者通过金属离子将乙烯-（甲基）丙烯酸共聚物、乙烯-（甲基）丙烯酸-（甲基）丙烯酸酯共聚物等交联所得的离子键树脂等形成。其中，基材薄膜可以由这些树脂的混合物或共聚物形成，另外也可以是将材质不同的薄膜层叠而形成的基材薄膜。
另外，这些树脂中优选离子键树脂，特别优选通过Na+、K+、Zn2+等金属离子将具有乙烯单元、（甲基）丙烯酸单元、以及（甲基）丙烯酸烷基酯单元的共聚物交联而成的离子键树脂。基材薄膜使用这样的离子键树脂时，可以抑制切割时须状切削屑的产生。
进而，理想的是对基材薄膜施加抗静电处理。由此，可以防止芯片贴装薄膜剥离时的带电。其中，对基材薄膜的抗静电处理的方法没有特别的限制，例如可以适宜使用（1）在构成基材薄膜的组合物中配混抗静电剂的处理，（2）在基材薄膜的芯片贴装薄膜层叠侧的面上涂布抗静电剂的处理，（3）利用电晕放电进行的带电处理等。
另外，作为抗静电剂，可以使用季铵盐单体等。作为该季铵盐单体，例如有（甲基）丙烯酸二甲氨基乙酯季铵盐、（甲基）丙烯酸二乙氨基乙酯季铵盐、（甲基）丙烯酸甲基乙氨基乙酯季铵盐、对二甲氨基苯乙烯季铵盐、以及对二乙氨基苯乙烯季铵盐等，特别优选甲基丙烯酸二甲氨基乙酯季铵盐。
［粘合层］
构成粘合层的粘合剂相对于100质量份的（甲基）丙烯酸酯共聚物，配混了0.5~20质量份多官能异氰酸酯固化剂。另外，（甲基）丙烯酸酯共聚物中，含羧基单体的共聚比率低于0.5%。进而，构成粘合层的粘合剂中，在前述各成分的基础上，优选配混20~200质量份的具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物、以及0.1~10质量份的有机硅改性丙烯酸类树脂。
＜（甲基）丙烯酸酯共聚物：100质量份＞
本实施方式的粘合片的粘合层中所含有的（甲基）丙烯酸酯共聚物是作为主单体的（甲基）丙烯酸酯和乙烯基化合物单体进行共聚而得到的共聚物。该（甲基）丙烯酸酯共聚物为光固化型压敏性粘合剂，通过紫外线照射而三维网状化，从而可以容易地将芯片贴装薄膜剥离。
作为（甲基）丙烯酸酯的主单体，例如可列举出（甲基）丙烯酸丁酯、（甲基）丙烯酸2-丁酯、（甲基）丙烯酸叔丁酯、（甲基）丙烯酸戊酯、（甲基）丙烯酸辛酯、（甲基）丙烯酸2-乙基己酯、（甲基）丙烯酸壬酯、（甲基）丙烯酸癸酯、（甲基）丙烯酸月桂酯、（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸异丙酯、（甲基）丙烯酸十三烷基酯、（甲基）丙烯酸肉豆蔻酯、（甲基）丙烯酸鲸蜡酯、（甲基）丙烯酸硬脂酯、（甲基）丙烯酸环己酯、（甲基）丙烯酸异冰片酯、（甲基）丙烯酸二环戊酯、（甲基）丙烯酸苄酯、（甲基）丙烯酸甲氧基乙酯、（甲基）丙烯酸乙氧基乙酯、（甲基）丙烯酸丁氧基甲酯以及（甲基）丙烯酸乙氧基正丙酯等。
另外，作为乙烯基化合物单体，例如可以使用具有选自由羟基、羧基、环氧基、酰胺基、氨基、羟甲基、磺酸基、氨基磺酸基以及（亚）磷酸酯基所组成的官能团组的1个或2个以上的官能团的单体。
这里，作为具有羟基的单体，例如可列举出（甲基）丙烯酸2-羟乙酯、（甲基）丙烯酸2-羟丙酯以及（甲基）丙烯酸2-羟丁酯等。
作为具有羧基的单体，例如可列举出（甲基）丙烯酸、巴豆酸、马来酸、马来酸酐、衣康酸、富马酸、丙烯酰胺基N-乙醇酸以及肉桂酸等。
作为具有环氧基的单体，例如可列举出烯丙基缩水甘油醚以及（甲基）丙烯酸缩水甘油醚等。
作为具有酰胺基的单体，例如可列举出（甲基）丙烯酰胺等。
作为具有氨基的单体，例如可列举出（甲基）丙烯酸N,N-二甲氨基乙酯等。
作为具有羟甲基的单体，例如可列举出N-羟甲基丙烯酰胺等。
但是，如果（甲基）丙烯酸酯共聚物中的含羧基单体的共聚比率在0.5%以上，则由于与芯片贴装薄膜的相互作用，有时密合性上升、发生拾取不良。因此，本实施方式的粘合片中使用含羧基单体的共聚比率低于0.5%的（甲基）丙烯酸酯共聚物。
作为制造前述（甲基）丙烯酸酯共聚物的方法，例如有乳液聚合以及溶液聚合等，优选乳液聚合。由此，可以抑制与芯片贴装薄膜的相互作用，能够容易地将芯片贴装薄膜从粘合片上剥离。
＜多官能异氰酸酯固化剂：0.5~20质量份＞
多官能异氰酸酯固化剂为具有2个以上异氰酸酯基的物质，例如有芳香族多异氰酸酯、脂肪族多异氰酸酯以及脂环族多异氰酸酯等。
这里，作为芳香族多异氰酸酯，例如可列举出1,3-苯二异氰酸酯、4,4’-二苯基二异氰酸酯、1,4-苯二异氰酸酯、4,4’-二苯甲烷二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-甲苯胺二异氰酸酯、2,4,6-三异氰酸酯甲苯、1,3,5-三异氰酸酯苯、二甲氧基苯胺二异氰酸酯、4,4’-二苯基醚二异氰酸酯、4,4’,4”-三苯基甲烷三异氰酸酯、ω,ω’-二异氰酸酯-1,3-二甲基苯、ω,ω’-二异氰酸酯-1,4-二甲基苯、ω,ω’-二异氰酸酯-1,4-二乙基苯、1,4-四甲基二甲苯二异氰酸酯以及1,3-四甲基二甲苯二异氰酸酯等。
作为脂肪族多异氰酸酯，例如可列举出三亚甲基二异氰酸酯、四亚甲基二异氰酸酯、六亚甲基二异氰酸酯、五亚甲基二异氰酸酯、1,2-亚丙基二异氰酸酯、2,3-亚丁基二异氰酸酯、1,3-亚丁基二异氰酸酯、十二亚甲基二异氰酸酯以及2,4,4-三甲基六亚甲基二异氰酸酯等。
作为脂环族多异氰酸酯，例如可列举出3-异氰酸根合甲基-3,5,5-三甲基环己基异氰酸酯、1,3-环戊烷二异氰酸酯、1,3-环己烷二异氰酸酯、1,4-环己烷二异氰酸酯、甲基-2,4-环己烷二异氰酸酯、甲基-2,6-环己烷二异氰酸酯、4,4’-亚甲基双（环己基异氰酸酯）、1,4-双（异氰酸根合甲基）环己烷以及1,4-双（异氰酸根合甲基）环己烷等。
并且，在这些多异氰酸酯中，优选1,3-苯二异氰酸酯、4,4’-二苯基二异氰酸酯、1,4-苯二异氰酸酯、4,4’-二苯甲烷二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4’-甲苯胺二异氰酸酯以及六亚甲基二异氰酸酯。
但是，多官能异氰酸酯固化剂的配混量相对于100质量份（甲基）丙烯酸酯共聚物低于0.5质量份时，粘合力变得过强而发生拾取不良。另外，多官能异氰酸酯固化剂的配混量相对于100质量份（甲基）丙烯酸酯共聚物超过20质量份时，粘合力降低，切割时粘合片与环框之间的固定力降低。因此，本实施方式的粘合片中，多官能异氰酸酯固化剂的配混比相对于100质量份（甲基）丙烯酸酯共聚物为0.5~20质量份。
由此，可以抑制拾取不良的发生，并维持切割时粘合片与环框（ring frame）之间的保持性。其中，多官能异氰酸酯固化剂的配混比更优选相对于100质量份（甲基）丙烯酸酯共聚物为1.0~10质量份。
＜聚氨酯丙烯酸酯低聚物：20~200质量份＞
对于本实施方式的粘合片而言，为了更容易地将芯片贴装薄膜剥离，可以在粘合层中配混特定量的具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物。这里，具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物（以下也简称为聚氨酯丙烯酸酯低聚物。）是指，具有4个以上乙烯基且分子内具有氨基甲酸酯键的（甲基）丙烯酸酯低聚物。
通过这样配混乙烯基数为4个以上的聚氨酯丙烯酸酯低聚物，可以进一步提高芯片贴装薄膜从通过紫外线照射而固化的粘接剂层的剥离性。其结果，能够在贴附有芯片贴装薄膜的状态下，容易地拾取半导体芯片。其中，在粘合层中配混乙烯基数不足4个的聚氨酯丙烯酸酯低聚物时，紫外线照射后的粘合力下降不够充分，反而降低了拾取特性。
在配混该聚氨酯丙烯酸酯低聚物时，其配混量优选相对于100质量份（甲基）丙烯酸酯共聚物为20~200质量份。聚氨酯丙烯酸酯低聚物的配混量低于20质量份时，无法充分地得到从紫外线照射后的粘合层剥离的剥离性提高效果。另一方面，聚氨酯丙烯酸酯低聚物的配混量超过200质量份时，切割时由于胶的沾粘而容易发生拾取不良，并且由于反应残渣而容易产生少量的残胶。其结果，将附着了芯片贴装薄膜的半导体芯片安装在引线框上时，容易发生加温时的粘接不良。
这里，作为聚氨酯丙烯酸酯低聚物，有（a）使具有羟基以及多个（甲基）丙烯酸酯基的（甲基）丙烯酸酯化合物与具有多个异氰酸酯基的化合物（例如二异氰酸酯化合物）反应而制得的聚氨酯丙烯酸酯低聚物，（b）在具有多个羟基末端的多元醇低聚物中添加过量的具有多个异氰酸酯基的化合物（例如二异氰酸酯化合物），使其反应而得到具有多个异氰酸酯末端的低聚物，再与具有羟基和多个（甲基）丙烯酸酯基的（甲基）丙烯酸酯化合物反应而得到的聚氨酯丙烯酸酯低聚物。
（a）的聚氨酯丙烯酸酯低聚物中，作为具有羟基和多个（甲基）丙烯酸酯基的（甲基）丙烯酸酯化合物，例如可列举出羟丙基化三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇羟基五丙烯酸酯、二季戊四醇四丙烯酸酯、四羟甲基甲烷三丙烯酸酯、二丙烯酸缩水甘油酯、或这些中的丙烯酸酯基的一部分或者全部为甲基丙烯酸酯基的化合物等。
另一方面，作为具有多个异氰酸酯基的化合物，例如可列举出芳香族异氰酸酯、脂环族异氰酸酯以及脂肪族异氰酸酯等。
具体而言，作为芳香族二异氰酸酯，例如有甲苯二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯、二甲苯二异氰酸酯。
作为脂环族二异氰酸酯，例如有异佛尔酮二异氰酸酯、亚甲基双（4-环己基异氰酸酯）。
作为脂肪族二异氰酸酯，例如有六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯。
并且，在这些异氰酸酯中，优选具有多个异氰酸酯基的芳香族异氰酸酯或脂环族异氰酸酯。另外，作为异氰酸酯成分的形态，有单体、二聚体以及三聚体，特别优选三聚体。
（b）的聚氨酯丙烯酸酯低聚物中，作为具有多个羟基末端的多元醇低聚物的多元醇成分，例如可列举出聚（环氧丙烷）二醇、聚（环氧丙烷）三醇、共聚（环氧乙烷-环氧丙烷）二醇、聚（四氢呋喃）二醇、乙氧基化双酚A、乙氧基化双酚S螺甘油、己内酯改性二醇以及碳酸酯二醇等。
＜有机硅改性丙烯酸类树脂：0.1~10质量份＞
对于本实施方式的粘合片而言，为了更容易地将芯片贴装薄膜剥离，可以在粘合层中与前述聚氨酯丙烯酸酯低聚物一同配混特定量的有机硅改性丙烯酸类树脂。
作为配混在构成粘合层的粘合剂中的有机硅改性丙烯酸类树脂，优选（甲基）丙烯酸单体与在聚二甲基硅氧烷键的末端具有乙烯基的有机硅系大分子单体的聚合物。另外，有机硅系大分子单体优选使用聚二甲基硅氧烷键的末端为（甲基）丙烯酰基或苯乙烯基等乙烯基的化合物。
其中，对于有机硅改性丙烯酸类树脂的有机硅系大分子单体的比例，优选相对于每100质量份有机硅改性丙烯酸类树脂为15~50质量份。由此，可以提高芯片贴装薄膜从紫外线照射后的粘合层剥离的剥离性，可以提高半导体芯片的拾取性。另外，可以抑制有机硅改性丙烯酸类树脂渗出到粘合剂表面，因此将贴附有芯片贴装薄膜的半导体芯片安装在引线框上时，不易发生加温时的粘接不良。
进而，作为有机硅改性丙烯酸类树脂，优选使用具有以下构成单元的有机硅改性丙烯酸类树脂，所述构成单元源于具有反应性的（甲基）丙烯酸羟烷基酯、改性（甲基）丙烯酸羟基酯以及具有乙烯基的单体之中的至少1种。如果使用这些有机硅改性丙烯酸类树脂，则在拾取半导体芯片时可以防止产生被称为微粒（particle）的微小残胶。由此，在粘合层上层叠芯片贴装薄膜的情况下，也可以防止有机硅改性丙烯酸类树脂向芯片贴装薄膜迁移。
作为成为该有机硅改性丙烯酸类树脂的原料的（甲基）丙烯酸单体，例如可列举出（甲基）丙烯酸烷基酯、（甲基）丙烯酸羟烷基酯、改性（甲基）丙烯酸羟基酯以及（甲基）丙烯酸等。
另外，作为（甲基）丙烯酸烷基酯，例如可列举出（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸正丙酯、（甲基）丙烯酸正丁酯、（甲基）丙烯酸异丁酯、（甲基）丙烯酸叔丁酯、（甲基）丙烯酸2-乙基己酯、（甲基）丙烯酸月桂酯、（甲基）丙烯酸硬脂酯、（甲基）丙烯酸异冰片酯以及（甲基）丙烯酸羟烷基酯等。
作为（甲基）丙烯酸羟烷基酯，例如可列举出（甲基）丙烯酸羟乙酯、（甲基）丙烯酸羟丙酯、以及（甲基）丙烯酸羟丁酯等。
作为改性（甲基）丙烯酸羟基酯，例如可列举出环氧乙烷改性（甲基）丙烯酸羟基酯以及内酯改性（甲基）丙烯酸羟基酯等。
配混前述有机硅改性丙烯酸类树脂时，其配混量优选相对于100质量份的（甲基）丙烯酸酯聚合物为0.1~10质量份。有机硅改性丙烯酸类树脂的配混量低于0.1质量份时，无法充分得到从紫外线照射后的粘合层剥离的剥离性提高效果。另一方面，有机硅改性丙烯酸类树脂的配混量超过10质量份时，初期的粘合力的降低变大，切割时容易发生从环框的剥离。
＜其他的成分＞
本实施方式的粘合片中的粘合层在不对其他成分造成影响的范围内，还可以含有聚合引发剂、软化剂、抗老化剂、填充剂、紫外线吸收剂以及光稳定剂等添加剂。
＜厚度：5~100μm＞
粘合层的厚度小于5μm时，有时粘合力降低而在切割时粘合片与环框之间的固定力降低。另外，粘合层的厚度超过100μm时，有时粘合力过强而发生拾取不良。因此，粘合层的厚度优选为5~100μm。其中，粘合层的厚度的更优选的范围为20~50μm，由此，可以平衡性良好地使半导体芯片的保持性和拾取性两者提高。
［芯片贴装薄膜］
本实施方式的粘合片所用的芯片贴装薄膜是将粘接剂组合物成型为薄膜状所得的薄膜，其含有导电性填料。作为构成此芯片贴装薄膜的组合物，可列举出丙烯酸系、聚酰胺系、聚乙烯系、聚砜系、环氧系、聚酰亚胺系、聚酰胺酸系、有机硅系、酚系、橡胶系聚合物、氟橡胶系聚合物以及氟树脂的单体、或这些的混合物或者共聚物等。另外，芯片贴装薄膜也可以是将不同材质的薄膜层叠而成的薄膜。进而，粘接剂组合物中还可以添加光聚合引发剂、防静电剂或交联促进剂。
＜导电性填料＞
另一方面，导电性填料是为了赋予芯片贴装薄膜导电性并使散热性提高而配混的。作为该导电性填料，例如可以使用银、铜、氮化硼、氧化铝、金、钯或镍的单一物质或混合物。其中，从可靠性、散热特性以及成本的方面来看，导电性填料优选使用银、铜、氮化硼或氧化铝。
另一方面，导电性填料的配混量优选相对于构成芯片贴装薄膜的粘接剂组合物中的树脂成分100质量份为10~1900质量份。这是因为，导电性填料的配混量低于10质量份时，有时散热特性变得不够充分；另外，配混量超过1900质量份时，有时会变脆，制膜性降低。
本实施方式的粘合片也可以通过例如在基材薄膜上涂布粘合剂形成粘合层之后，在该粘合层上贴附由其他方式形成的芯片贴装薄膜来制造。这种情况下，需要调整芯片贴装薄膜与粘合层之间的粘合强度。该芯片贴装薄膜与粘合层之间的粘合强度大时，有时会发生拾取不良；反之粘合强度小时，有时芯片保持会降低。具体而言，芯片贴装薄膜与粘合层之间的粘合强度优选为0.05~0.9N/20mm。
如以上详述，由于本实施方式的粘合片使芯片贴装薄膜中含有导电性填料，并且粘合层中所含的（甲基）丙烯酸酯共聚物中含羧基单体的共聚比率低于0.5%，因此可以赋予芯片贴装薄膜导电性而不会降低半导体芯片的保持性以及拾取性。
（第2实施方式）
接着，对本发明的第2实施方式的电子部件进行说明。本实施方式的电子部件使用前述第1实施方式的粘合片安装有半导体芯片等。图1的（a）~（d）为将本实施方式的电子部件的制造方法按其工序顺序表示的剖视图。
制造本实施方式的电子部件时，首先，如图1的（a）所示，进行将硅晶片101贴附在粘合片110上并固定的贴附工序和将粘合片110固定在环框102上的固定工序（步骤S1)。接着，如图1的（b）所示，进行用切割刀104切割硅晶片101而形成半导体芯片108的切割工序（步骤S2）。
其后，进行将粘合片110呈放射状扩大、扩展半导体芯片108的间隔的扩展工序（步骤S3），在该状态下，通过真空套爪（collet）将半导体芯片108吸附并拾取（步骤S4）。此步骤S4的拾取工序中，如图1的（c）所示，在粘合层103和芯片贴装薄膜105之间剥离，拾取附着有芯片贴装薄膜105的状态的半导体芯片108。
其次，如图1的（d）所示，进行将附着有芯片贴装薄膜105的半导体芯片108安装到例如引线框111等上的安装工序（步骤S5）。接着进行加热芯片贴装薄膜105使半导体芯片108与引线框111加热粘接的加热粘接工序（步骤S6）以及将安装在引线框111或电路基板上的半导体芯片108用树脂（未图示）铸型的铸型工序（步骤S7）。
本实施方式的电子部件中，由于使用前述的第1实施方式的粘合片，因此该制造工序中，半导体芯片的保持性以及拾取性均优异。
实施例
以下列举本发明的实施例及比较例，对本发明的效果进行具体的说明。需要说明的是，本发明不受这些实施例的限制。本实施例中，按照以下所示的方法和条件制作实施例1~13及比较例1~7的粘合片，并评价其性能。
具体而言，首先，将下述表1及表2所示的配方的粘合剂涂布在聚对苯二甲酸乙二醇酯制的隔离膜上，以干燥后的粘合层厚度为20μm的方式涂布。其次，在基材薄膜上层叠该粘合层，然后，将芯片贴装薄膜切断成6.2英寸φ的圆形，层压在粘合层上，得到实施例以及比较例的各粘合片。
[表1]
Figure BDA00001702478900151
[表2]
此时，实施例及比较例中，基材薄膜均使用Du Pont-MitsuiPolychemicals Co.,Ltd制造的离子键树脂。具体而言，是以乙烯-甲基丙烯酸-甲基丙烯酸烷基酯共聚物的Zn盐为主体、并含有Zn2+离子的树脂，其MFR（熔体流动速率，Melt Flow Rate）值为1.5g/10分钟（JIS K7210，210℃），熔点为96℃，厚度为80μm。
另外，粘合层所含的各成分如下。
＜（甲基）丙烯酸酯共聚物＞
A：综研化学公司制SK-Dyne 1496
丙烯酸2-乙基己酯：95质量%和丙烯酸2-羟乙酯：5质量%进行溶液聚合所得的共聚物。不含羧基。
B：ZEON CORPORATION制AR53L
丙烯酸乙酯：40质量%、和丙烯酸丁酯：23质量%、和丙烯酸甲氧基乙酯：37质量%进行悬浮聚合所得的共聚物。不含羧基。
C：综研化学公司制SK-Dyne 1305H
丙烯酸丁酯：65质量%、丙烯酸甲酯：25质量%、丙烯酸：5质量%的共聚物，是通过溶液聚合而到的。含羧基（单体的共聚比率：5%）。
＜多官能异氰酸酯固化剂＞
A：日本聚氨酯公司制造CORONATE L-45E（注册商标）
2,4-甲苯二异氰酸酯的三羟甲基丙烷加合物
＜具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物＞
上述表1以及表2中，仅记为聚氨酯丙烯酸酯低聚物。
A：根上工业公司制UN-3320HS
使异佛尔酮二异氰酸酯（脂环族二异氰酸酯）的三聚物反应而得到的末端异氰酸酯低聚物与二季戊四醇五丙烯酸酯反应所得的末端丙烯酸酯低聚物。数均分子量为3700。丙烯酸酯官能团数为15个。
B：新中村化学公司制UA-340P
使异佛尔酮二异氰酸酯与聚（丙二醇）二醇的末端反应而生成的末端异氰酸酯低聚物进而与丙烯酸2-羟乙酯反应而生成的末端丙烯酸酯低聚物。数均分子量为13000。乙烯基数为每1分子2个。
＜有机硅改性丙烯酸类树脂＞
A：综研化学公司制UTMM-LS2
使在有机硅分子链的末端含有带（甲基）丙烯酰基的有机硅系低聚物系单元，与由甲基丙烯酸甲酯等构成的丙烯酸乙烯基单元聚合而得到的有机硅系接枝共聚物。
＜芯片贴装薄膜＞
A：相对于100质量份以环氧粘接剂为主体的树脂成分，含有400质量份银填料。厚度为30μm。
B：相对于100质量份以环氧粘接剂为主体的树脂成分，含有400质量份氮化硼填料。厚度为30μm。
C：相对于100质量份以环氧粘接剂为主体的树脂成分，含有400质量份氧化铝填料。厚度为30μm。
D：相对于100质量份以环氧粘接剂为主体的树脂成分，含有400质量份镍填料。厚度为30μm。
＜光聚合引发剂＞
光聚合引发剂使用苯偶酰二甲基缩酮，具体而言，使用CibaSpeciality Chemicals Inc.制造的Irgacure 651（注册商标）。
接着，使用以前述方法及条件制作的实施例及比较例的各粘合片，与前述第2实施方式的电子部件的制造方法同样地进行如下所述的步骤S1~S7来制造电子部件。然后，对实施例及比较例的各粘合片进行关于半导体芯片的保持性及拾取性的评价。
步骤S1：
同时进行将硅晶片101贴附在粘合片110上并固定的贴附工序和将粘合片110固定在环框102上的固定工序（参照图1的（a））。此时，硅晶片101使用形成有虚拟（dummy）电路图案的直径8英寸×厚度0.3mm的硅晶片。
步骤S2：
进行用切割刀104将硅晶片101切成芯片尺寸为6mm×6mm的半导体芯片108的切割工序（参照图1的（b））。切割的主要设定如下。
对粘合片110的切入107的量：15μm
切割装置：DISCO Inc.制DAD341
切割刀：DISCO Inc.制NBC-ZH205O-27HEEE
切割刀形状：外径55.56mm、刀宽35μm、内径19.05mm
切割刀转速：40000rpm
切割刀进给速度：50mm/秒
切削水温度：25℃
切削水量：1.0L/分
步骤S3：
进行将粘合片110呈放射状扩大、扩展半导体芯片108的间隔的扩展工序（未图示）。此时的扩展量为8mm。
步骤S4：
进行用针销（needle pin，未图示）顶起之后，用真空套爪（未图示）吸附半导体芯片108，在粘合层103与芯片贴装薄膜105之间剥离，拾取附着了芯片贴装薄膜105的半导体芯片108的拾取工序（参照图1的（c））。拾取中的主要设定如下。
拾取装置：Canon Machinery Inc.制CAP-300II
针销形状：250μmR
针销顶起高度：0.5mm
步骤S5：
进行将附着了芯片贴装薄膜105的半导体芯片108安装在引线框111上的安装工序（参照图1的（d））。
步骤S6：
进行加热芯片贴装薄膜105使半导体芯片108与引线框111加热粘接的加热粘接工序（未图示）。
步骤S7：
进行将安装在引线框111上的半导体芯片108用树脂（未图示）铸型的铸型工序（未图示）。
芯片保持性及拾取性基于以下所示标准进行评价。
＜芯片保持性＞
芯片保持性利用在步骤S3的切割工序后半导体芯片108保持在粘合片110上的半导体芯片108的残存率进行评价。
◎（优）：芯片飞散低于5%。
○（良）：芯片飞散在5%以上且低于10%。
×（差）：芯片飞散在10%以上。
＜拾取性＞
拾取性利用在步骤S5的拾取工序中可拾取的比率进行评价。
◎（优）：可拾取95%以上的芯片。
○（良）：可拾取80%以上且低于95%的芯片。
×（差）：可拾取低于80%的芯片。
将以上结果一并示于上述表1及表2中。如上述表1及表2所示，多官能异氰酸酯固化剂的含量低于0.5质量份的比较例1的粘合片，其拾取性差。另一方面，多官能异氰酸酯固化剂的含量超过20质量份的比较例2的粘合片，其芯片保持性差。
另外，使用了含羧基单体的共聚比率为0.5%以上的（甲基）丙烯酸酯共聚物的比较例3及比较例7的粘合片，拾取性均差。另一方面，添加了超过200质量份的量的聚氨酯丙烯酸酯低聚物的比较例4的粘合片，其芯片保持性及拾取性两者均差。
另外，添加了乙烯基数不足4个的聚氨酯丙烯酸酯低聚物的比较例5的粘合片，其拾取性差。并且，添加了超过10质量份的量的有机硅改性丙烯酸类树脂的比较例6的粘合片，其芯片保持性差。
与此相对，在本发明的范围内制作的实施例1~13的粘合片，其芯片保持性及拾取性均优异。由此确认，根据本发明可得到芯片贴装薄膜具有导电性，且半导体芯片的保持性及拾取性也优异的粘合片。
附图标记说明
101硅晶片
102环框
103粘合层
104切割刀
107切入
105芯片贴装薄膜
106基材薄膜
108半导体芯片
110粘合片
111引线框

Claims (5)

1.一种粘合片，其具备：
基材薄膜；和
层叠在该基材薄膜的一面的粘合层；和
层叠在该粘合层上的含有导电性填料的芯片贴装薄膜，
所述粘合层含有：
100质量份（甲基）丙烯酸酯共聚物，所述（甲基）丙烯酸酯共聚物的含羧基单体的共聚比率低于0.5%；和
0.5~20质量份多官能异氰酸酯固化剂。
2.根据权利要求1所述的粘合片，其中，所述粘合层还含有：
20~200质量份具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物；和
0.1~10质量份有机硅改性丙烯酸类树脂。
3.根据权利要求1或2所述的粘合片，其中，所述粘合层的厚度为20~50μm。
4.根据权利要求1~3中任一项所述的粘合片，其中，所述导电性填料为银、铜、氮化硼或氧化铝的单一物质或混合物。
5.一种电子部件，其是使用权利要求1~4中任一项所述的粘合片所制造的。
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