CN113257887A - 一种具有三种区域的4H-SiC金属半导体场效应晶体管 - Google Patents

一种具有三种区域的4H-SiC金属半导体场效应晶体管 Download PDF

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CN113257887A
CN113257887A CN202110307399.8A CN202110307399A CN113257887A CN 113257887 A CN113257887 A CN 113257887A CN 202110307399 A CN202110307399 A CN 202110307399A CN 113257887 A CN113257887 A CN 113257887A
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贾护军
董梦宇
王笑伟
朱顺威
杨银堂
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Xidian University
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract

本发明提供了一种具有三种区域的4H‑SiC金属半导体场效应晶体管，自下而上包括4H‑SiC半绝缘衬底(1)、P型缓冲层(2)、N型沟道层(3)，源极帽层(4)和漏极帽层(5)，源电极(6)和漏电极(7)，栅电极(8)，轻掺杂区域(9)，氮化硅绝缘区域(10)和重掺杂区域(11)。本发明可以达到以下效果：饱和电流的提高、击穿电压的提高、频率特性的改善和PAE的提高。由于沟道内重掺杂区域的存在，器件的跨导有显著提高，使得器件的PAE有所提高。

Description

一种具有三种区域的4H-SiC金属半导体场效应晶体管
技术领域
本发明属于场效应晶体管技术领域；尤其涉及一种具有三种区域的4H-SiC金属半导体场效应晶体管。
背景技术
碳化硅(SiC)功率器件耐高温、抗辐射、具有较高的击穿电压和工作频率，适于在恶劣条件下工作，特别是与传统的硅(Si)功率器件相比，SiC功率器件可将功耗降低一半，因此可大幅度降低开关电源、电机驱动器等电路的热耗、体积和重量。SiC在微波功率器件，尤其是金属半导体场效应晶体管(MESFET)的应用中占有主要地位。SiC MESFET非常适合在雷达发射机中使用,使用它可显著提高雷达发射机的输出功率和功率密度，提高工作频率和工作频带宽度，提高雷达发射机的环境温度适应性，提高抗辐射能力。
传统的4H-SiC MESFET的结构从下到上是：4H-SiC半绝缘衬底、P型缓冲层、N型沟道层和N+帽层，通过对传统结构沟道形状以及栅极形状改变对器件性能的提升有限，许多结构在提升器件击穿电压时降低了饱和电流，提高器件饱和电流又降低了器件击穿电压，即提升器件某一方面性能的时候往往伴随着某一方面性能的降低。这种牵制关系制约着器件性能的提高。
发明内容
本发明的目的是提供了一种具有三种区域的4H-SiC金属半导体场效应晶体管。
本发明是通过以下技术方案实现的：
本发明涉及一种具有三种区域的4H-SiC金属半导体场效应晶体管，自下而上包括4H-SiC半绝缘衬底1、P型缓冲层2、N型沟道层3，所述N型沟道层3的上方设置有源极帽层4和漏极帽层5，所述源极帽层4和漏极帽层5的表面分别设置有源电极6和漏电极7，所述N型沟道层3的上方且靠近源电极6的一侧形成栅电极8,所述源极帽层4和漏极帽层5之间的凹陷栅靠近源极帽层4的一侧为轻掺杂区域9,所述源极帽层4和漏极帽层5之间的凹陷栅靠近漏极帽层5的一侧为氮化硅绝缘区域10，所述P型缓冲层2的上方且位于N型沟道层3底部设置有重掺杂区域11。
优选地，所述轻掺杂区域9的深度为0.06μm，宽度为0.2μm，掺杂浓度为1×1015cm-3。
优选地，所述氮化硅绝缘区域10的深度为0.06μm，宽度为0.8μm。
优选地，所述重掺杂区域11以P型缓冲层2表面为参考高度为0.1μm，宽度为0.5μm，掺杂浓度为5×1019cm-3。
本发明具有以下优点：
(1)饱和电流的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内重掺杂区域的存在，沟道内的可移动载流子数量大量增加，使得器件的饱和电流提高，最大输出功率密度与也得到了提高。
(2)击穿电压的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内氮化硅绝缘区域的存在，沟道内电场的分布得到了改善，使得电场集边效应得到减弱，击穿电压得到了提高。
(3)频率特性的改善。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内轻掺杂区域的存在，器件的栅源电容的到了改善，使得在提高器件其他性能的时候，防止频率特性恶化，最终提高了器件的截止频率。
(4)PAE的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内重掺杂区域的存在，器件的跨导有显著提高，使得器件的PAE有所提高。
附图说明
图1是为本发明具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管示意图。
其中：1为4H-SiC半绝缘衬底，2为P型缓冲层，3为N型沟道层，4为源极帽层，5为漏极帽层，6为源电极，7为漏电极，8为栅电极，9为轻掺杂区域，10为氮化硅绝缘区域，11为重掺杂区域。
具体实施方式
下面结合具体实施例对本发明进行详细说明。应当指出的是，以下的实施实例只是对本发明的进一步说明，但本发明的保护范围并不限于以下实施例。
实施例
本实施例涉及一种具有三种区域的4H-SiC金属半导体场效应晶体管，具体涉及一种具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管；如图1所示：自下而上包括4H-SiC半绝缘衬底1、P型缓冲层2、N型沟道层3，所述N型沟道层3的上方设置有源极帽层4和漏极帽层5，所述源极帽层4和漏极帽层5的表面分别设置有源电极6和漏电极7，所述N型沟道层3的上方且靠近源电极6的一侧形成栅电极8,所述源极帽层4和漏极帽层5之间的凹陷栅靠近源极帽层4的一侧为轻掺杂区域9,所述源极帽层4和漏极帽层5之间的凹陷栅靠近漏极帽层5的一侧为氮化硅绝缘区域10，所述P型缓冲层2的上方且位于N型沟道层3底部设置有重掺杂区域11。
优选地，所述轻掺杂区域9的深度为0.06μm，宽度为0.2μm，掺杂浓度为1×1015cm-3。
优选地，所述氮化硅绝缘区域10的深度为0.06μm，宽度为0.8μm。
优选地，所述重掺杂区域11以P型缓冲层2表面为参考高度为0.1μm，宽度为0.5μm，掺杂浓度为5×1019cm-3。
与现有技术相比，本发明具有以下优点：
(1)饱和电流的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内重掺杂区域的存在，沟道内的可移动载流子数量大量增加，使得器件的饱和电流提高，最大输出功率密度与也得到了提高。
(2)击穿电压的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内氮化硅绝缘区域的存在，沟道内电场的分布得到了改善，使得电场集边效应得到减弱，击穿电压得到了提高。
(3)频率特性的改善。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内轻掺杂区域的存在，器件的栅源电容的到了改善，使得在提高器件其他性能的时候，防止频率特性恶化，最终提高了器件的截止频率。
(4)PAE的提高。对于具有沟道内部分重掺杂区域、部分轻掺杂区域以及部分绝缘区域的4H-SiC金属半导体场效应晶体管，由于沟道内重掺杂区域的存在，器件的跨导有显著提高，使得器件的PAE有所提高。
以上对本发明的具体实施例进行了描述。需要理解的是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内做出各种变形或修改，这并不影响本发明的实质。

Claims (4)

1.一种具有三种区域的4H-SiC金属半导体场效应晶体管，自下而上包括4H-SiC半绝缘衬底(1)、P型缓冲层(2)、N型沟道层(3)，其特征在于，所述N型沟道层(3)的上方设置有源极帽层(4)和漏极帽层(5)，所述源极帽层(4)和漏极帽层(5)的表面分别设置有源电极(6)和漏电极(7)，所述N型沟道层(3)的上方且靠近源电极(6)的一侧形成栅电极(8),所述源极帽层(4)和漏极帽层(5)之间的凹陷栅靠近源极帽层(4)的一侧为轻掺杂区域(9),所述源极帽层(4)和漏极帽层(5)之间的凹陷栅靠近漏极帽层(5)的一侧为氮化硅绝缘区域(10)，所述P型缓冲层(2)的上方且位于N型沟道层(3)底部设置有重掺杂区域(11)。
2.如权利要求1所述的具有三种区域的4H-SiC金属半导体场效应晶体管，其结构特征在于，所述轻掺杂区域(9)的深度为0.06μm，宽度为0.2μm，掺杂浓度为1×1015cm-3。
3.如权利要求1所述的具有三种区域的4H-SiC金属半导体场效应晶体管，其结构特征在于，所述氮化硅绝缘区域(10)的深度为0.06μm，宽度为0.8μm。
4.如权利要求1所述的具有三种区域的4H-SiC金属半导体场效应晶体管，其结构特征在于，所述重掺杂区域(11)以P型缓冲层(2)表面为参考高度为0.1μm，宽度为0.5μm，掺杂浓度为5×1019cm-3。
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CN114023805A (zh) * 2021-10-18 2022-02-08 西安电子科技大学 具有P型掺杂区和凹陷缓冲层的4H-SiC金属半导体场效应管

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