CN109524474A - 具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管 - Google Patents

具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管 Download PDF

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CN109524474A
CN109524474A CN201811324344.2A CN201811324344A CN109524474A CN 109524474 A CN109524474 A CN 109524474A CN 201811324344 A CN201811324344 A CN 201811324344A CN 109524474 A CN109524474 A CN 109524474A
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贾护军
李涛
仝宜波
朱顺威
胡梅
赵玥阳
杨银堂
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Xidian University
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Abstract

本发明公开了具有栅边缘漏侧部分轻掺杂的4H‑SiC金属半导体场效应晶体管，自下而上包括4H‑SiC半绝缘衬底、P型缓冲层、N型沟道层，N型沟道层的上表面两侧设有源极帽层和漏极帽层，源极帽层上表面设有源电极，漏极帽层上表面设有漏电极，N型沟道层底部且靠近源极帽层的一侧设有栅电极，在N型沟道层底部且位于部分栅电极的栅下和部分栅漏间形成轻掺杂区，轻掺杂区以栅电极漏侧的栅边缘的垂线为对称轴呈轴对称结构。本发明能够缓解栅边缘漏侧的电场集中效应，以优化栅边缘漏侧的电场和电流，从而抑制击穿；能够缓解热电子充电效应，以减少界面态的产生，抑制器件性能的衰退，从而提高器件的寿命。

Description

具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶 体管
技术领域
本发明涉及场效应晶体管技术领域，特别是一种具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管。
背景技术
SiC材料具有宽带隙、高击穿电场、高的饱和电子迁移速度、高热导率等突出的材料和电学特性，使其在高频高功率器件应用中，尤其是高温、高压、航天、卫星等严苛环境下的高频高功率器件应用中具有很大的潜力。在SiC同质异形体中，六角密堆积的纤锌矿结构的4H-SiC的电子迁移率是6H-SiC的近三倍，因此4H-SiC材料在高频高功率器件，尤其是金属半导体场效应晶体管(MESFET)应用中占有主要地位。
目前，大多数文献致力于双凹栅4H-SiC MESFET结构的研究及在此结构的基础上进行改进。该结构从下至上由4H-SiC半绝缘衬底、P型缓冲层、N型沟道层和N+帽层堆叠而成，以该堆叠层为基础，刻蚀N+帽层后形成凹陷的N型沟道层，栅的源侧一半长度向N型沟道层内凹陷形成凹栅结构，凹陷的N型沟道层可通过反应离子刻蚀RIE技术完成。
中国专利申请号CN201410629243.1公开的一种金属氧化物半导体场效应管的终端结构，包括N型的截止环，还包括通过离子注入形成于所述截止环与有源区之间的第一P型低掺杂区域和第二P型低掺杂区域，注入剂量为1.5*1011～2*1013/cm2，注入能量为20千电子伏～80千电子伏，两个P型低掺杂区域中所述第一P型低掺杂区域相对更靠近所述有源区，所述第一P型低掺杂区域的长度小于所述第二P型低掺杂区域的长度。该方案是采用两个低掺杂的P-区来降低表面电场、提高MOSFET的击穿电压，替代了传统的多个分压环的终端结构，大大减小了终端尺寸、提高了芯片的有效利用面积，在相同面积下使芯片的参数更优。但栅边缘漏侧的电场集中效应和热电子充电效应未得到有效的改善，这使得器件很容易被击穿，且寿命受到很大影响，限制了器件的工作环境和可靠性。使器件能在极端恶劣环境下稳定工作迫在眉睫。
发明内容
本发明的目的是要解决现有技术中存在的不足，提供一种具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，能有效缓解栅边缘漏侧的电场集中效应、热电子充电效应。
为达到上述目的，本发明是按照以下技术方案实施的：
具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，自下而上包括4H-SiC半绝缘衬底、P型缓冲层、N型沟道层，N型沟道层的上表面两侧设有源极帽层和漏极帽层，所述源极帽层上表面设有源电极，漏极帽层上表面设有漏电极，N型沟道层底部且靠近源极帽层的一侧设有栅电极，在N型沟道层底部且位于部分栅电极的栅下和部分栅漏间形成轻掺杂区，所述轻掺杂区以栅电极漏侧的栅边缘的垂线为对称轴呈轴对称结构。
进一步，所述轻掺杂区的深度为0.1μm，长度为0.3μm，掺杂浓度为3×1016cm-3。
进一步，所述轻掺杂区位于栅电极的栅下长度为0.15μm，栅漏下长度为0.15μm。
与现有技术相比，本发明具有以下有益效果：
第一，缓解栅边缘漏的的电场集中效应。由于传统MESFET器件的栅边缘漏侧冶金结的存在，电场在此处达到峰值，使得器件极易在此处被击穿。针对这一现象，对栅边缘漏侧进行轻掺杂，轻掺杂区由于电阻较大，会使一部分电场集中在轻掺杂区，有效缓解了栅边缘漏侧的电场集中效应，调整了沟道内的电场分布，抑制了击穿，提高了器件的稳定性。
第二，缓解热电子充电效应。在电场强度大的地方，沟道电子极易获得过大的能量，穿入缓冲层甚至衬底，引起界面态，导致器件经一段时间后性能衰退。通过引入轻掺杂区，一方面减少了电场最密集处的载流子浓度，使载流被充电的几率变小，另一方面较小了电场的峰值，使热载流子显著减少。从而提高了器件的寿命。
第三，此结构主要针对冶金结处进行部分轻掺杂，通过轻掺杂区形成的电场峰，缓解冶金结处的电场集中效应，并且通过轻掺杂区载流子浓度的急剧降低，缓解热电子充电效应。从而提高器件在极端环境下的工作能力。即此结构的重点是提高器件的稳定性和寿命。
附图说明
图1为本发明的结构示意图。
图中：1、4H-SiC半绝缘衬底，2、P型缓冲层，3、N型沟道层，4、源极帽层，5、漏极帽层，6、源电极，7、漏电极，8、栅电极，9、轻掺杂区。
具体实施方式
为使本发明的目的、技术方案及优点更加清楚明白，以下结合附图和实施例，对本发明进行进一步的详细说明。此处所描述的具体实施例仅用于解释本发明，并不用于限定发明。
实施例1
如图1所示，本实施例提供的具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，自下而上包括4H-SiC半绝缘衬底1、P型缓冲层2、N型沟道层3，N型沟道层3的上表面两侧设有源极帽层4和漏极帽层5，所述源极帽层4上表面设有源电极6，漏极帽层5上表面设有漏电极7，N型沟道层3底部且靠近源极帽层4的一侧设有栅电极8，在N型沟道层3底部且位于部分栅电极8的栅下和部分栅漏间形成轻掺杂区9，所述轻掺杂区9以栅电极8漏侧的栅边缘的垂线为对称轴呈轴对称结构。
本实施例中，所述轻掺杂区9的深度为0.1μm，长度为0.3μm，掺杂浓度为3×1016cm-3；轻掺杂区9位于栅电极8的栅下长度为0.15μm，栅漏下长度为0.15μm。
本实施例通过对栅边缘漏侧进行轻掺杂，轻掺杂区由于电阻较大，会使一部分电场集中在轻掺杂区，有效缓解了栅边缘漏侧的电场集中效应，调整了沟道内的电场分布，抑制了击穿，提高了器件的稳定性。通过引入轻掺杂区，一方面减少了电场最密集处的载流子浓度，使载流被充电的几率变小，另一方面较小了电场的峰值，使热载流子显著减少。从而提高了器件的寿命。
本发明的技术方案不限于上述具体实施例的限制，凡是根据本发明的技术方案做出的技术变形，均落入本发明的保护范围之内。

Claims (3)

1.具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，自下而上包括4H-SiC半绝缘衬底(1)、P型缓冲层(2)、N型沟道层(3)，N型沟道层(3)的上表面两侧设有源极帽层(4)和漏极帽层(5)，所述源极帽层(4)上表面设有源电极(6)，漏极帽层(5)上表面设有漏电极(7)，N型沟道层(3)底部且靠近源极帽层(4)的一侧设有栅电极(8)，其特征在于：在N型沟道层(3)底部且位于部分栅电极(8)的栅下和部分栅漏间形成轻掺杂区(9)，所述轻掺杂区(9)以栅电极(8)漏侧的栅边缘的垂线为对称轴呈轴对称结构。
2.根据权利要求1所述的具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，其特征在于：所述轻掺杂区(9)的深度为0.1μm，长度为0.3μm，掺杂浓度为3×1016cm-3。
3.根据权利要求1所述的具有栅边缘漏侧部分轻掺杂的4H-SiC金属半导体场效应晶体管，其特征在于：所述轻掺杂区(9)位于栅电极(8)的栅下长度为0.15μm，栅漏下长度为0.15μm。
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CN113257887A (zh) * 2021-03-23 2021-08-13 西安电子科技大学 一种具有三种区域的4H-SiC金属半导体场效应晶体管

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