CN112994673B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN112994673B
CN112994673B CN202011430081.0A CN202011430081A CN112994673B CN 112994673 B CN112994673 B CN 112994673B CN 202011430081 A CN202011430081 A CN 202011430081A CN 112994673 B CN112994673 B CN 112994673B
Authority
CN
China
Prior art keywords
voltage
semiconductor device
circuit
node
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011430081.0A
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English (en)
Chinese (zh)
Other versions
CN112994673A (zh
Inventor
羽生洋
山本晃央
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN112994673A publication Critical patent/CN112994673A/zh
Application granted granted Critical
Publication of CN112994673B publication Critical patent/CN112994673B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202011430081.0A 2019-12-12 2020-12-07 半导体装置 Active CN112994673B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-224421 2019-12-12
JP2019224421A JP7325314B2 (ja) 2019-12-12 2019-12-12 半導体装置

Publications (2)

Publication Number Publication Date
CN112994673A CN112994673A (zh) 2021-06-18
CN112994673B true CN112994673B (zh) 2025-02-18

Family

ID=76085314

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011430081.0A Active CN112994673B (zh) 2019-12-12 2020-12-07 半导体装置

Country Status (4)

Country Link
US (1) US11658652B2 (enExample)
JP (1) JP7325314B2 (enExample)
CN (1) CN112994673B (enExample)
DE (1) DE102020131358A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024063872A (ja) * 2022-10-27 2024-05-14 三菱電機株式会社 スイッチング素子駆動回路
JP2025029732A (ja) 2023-08-22 2025-03-07 三菱電機株式会社 ゲート駆動装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03105262A (ja) * 1989-09-20 1991-05-02 Toshiba Corp 電流検出回路
JPH05146049A (ja) * 1991-11-22 1993-06-11 Nec Kansai Ltd 負荷状態検出回路
JP2007019728A (ja) * 2005-07-06 2007-01-25 Auto Network Gijutsu Kenkyusho:Kk 電力供給制御装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07146722A (ja) * 1993-10-01 1995-06-06 Fuji Electric Co Ltd トランジスタ用過電流保護装置
JPH1093355A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 高耐圧パワー集積回路
WO1999017434A1 (en) 1997-09-30 1999-04-08 Mitsubishi Denki Kabushiki Kaisha Boosting active filter system and controller for boosting active filter
JP3901449B2 (ja) 2000-12-19 2007-04-04 東芝マイクロエレクトロニクス株式会社 半導体集積回路
US7986149B2 (en) * 2008-08-19 2011-07-26 Infineon Technologies Austria Ag System and method for adaptive load fault detection
JP5510478B2 (ja) * 2012-03-02 2014-06-04 株式会社デンソー スイッチング素子の駆動回路
JP5815441B2 (ja) * 2012-03-05 2015-11-17 三菱電機株式会社 スイッチング半導体装置の制御装置
JP5790880B2 (ja) * 2012-06-22 2015-10-07 富士電機株式会社 過電流検出装置及びこれを使用したインテリジェントパワーモジュール
DE112014002021T5 (de) * 2013-04-18 2016-01-28 Fuji Electric Co., Ltd. Schaltelement-Ansteuerkreis
JP5991435B2 (ja) * 2013-07-05 2016-09-14 富士電機株式会社 半導体装置
US9094005B2 (en) * 2013-07-30 2015-07-28 Denso Corporation Semiconductor element module and gate drive circuit
JP6260552B2 (ja) 2015-02-26 2018-01-17 株式会社オートネットワーク技術研究所 電力供給装置
US10728960B2 (en) * 2017-03-16 2020-07-28 Infineon Technologies Ag Transistor with integrated active protection
JP6692323B2 (ja) 2017-06-12 2020-05-13 三菱電機株式会社 半導体装置
US11082039B2 (en) * 2017-11-08 2021-08-03 Gan Systems Inc. GaN transistor with integrated drain voltage sense for fast overcurrent and short circuit protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03105262A (ja) * 1989-09-20 1991-05-02 Toshiba Corp 電流検出回路
JPH05146049A (ja) * 1991-11-22 1993-06-11 Nec Kansai Ltd 負荷状態検出回路
JP2007019728A (ja) * 2005-07-06 2007-01-25 Auto Network Gijutsu Kenkyusho:Kk 電力供給制御装置

Also Published As

Publication number Publication date
US20210184668A1 (en) 2021-06-17
US11658652B2 (en) 2023-05-23
CN112994673A (zh) 2021-06-18
JP7325314B2 (ja) 2023-08-14
DE102020131358A1 (de) 2021-06-17
JP2021093676A (ja) 2021-06-17

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