JP7325314B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7325314B2
JP7325314B2 JP2019224421A JP2019224421A JP7325314B2 JP 7325314 B2 JP7325314 B2 JP 7325314B2 JP 2019224421 A JP2019224421 A JP 2019224421A JP 2019224421 A JP2019224421 A JP 2019224421A JP 7325314 B2 JP7325314 B2 JP 7325314B2
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JP
Japan
Prior art keywords
voltage
semiconductor device
switching element
circuit
node
Prior art date
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Active
Application number
JP2019224421A
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English (en)
Japanese (ja)
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JP2021093676A5 (enExample
JP2021093676A (ja
Inventor
洋 羽生
晃央 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2019224421A priority Critical patent/JP7325314B2/ja
Priority to US17/073,566 priority patent/US11658652B2/en
Priority to DE102020131358.6A priority patent/DE102020131358A1/de
Priority to CN202011430081.0A priority patent/CN112994673B/zh
Publication of JP2021093676A publication Critical patent/JP2021093676A/ja
Publication of JP2021093676A5 publication Critical patent/JP2021093676A5/ja
Application granted granted Critical
Publication of JP7325314B2 publication Critical patent/JP7325314B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2019224421A 2019-12-12 2019-12-12 半導体装置 Active JP7325314B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019224421A JP7325314B2 (ja) 2019-12-12 2019-12-12 半導体装置
US17/073,566 US11658652B2 (en) 2019-12-12 2020-10-19 Semiconductor device
DE102020131358.6A DE102020131358A1 (de) 2019-12-12 2020-11-26 Halbleitervorrichtung
CN202011430081.0A CN112994673B (zh) 2019-12-12 2020-12-07 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019224421A JP7325314B2 (ja) 2019-12-12 2019-12-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2021093676A JP2021093676A (ja) 2021-06-17
JP2021093676A5 JP2021093676A5 (enExample) 2022-03-25
JP7325314B2 true JP7325314B2 (ja) 2023-08-14

Family

ID=76085314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019224421A Active JP7325314B2 (ja) 2019-12-12 2019-12-12 半導体装置

Country Status (4)

Country Link
US (1) US11658652B2 (enExample)
JP (1) JP7325314B2 (enExample)
CN (1) CN112994673B (enExample)
DE (1) DE102020131358A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024063872A (ja) * 2022-10-27 2024-05-14 三菱電機株式会社 スイッチング素子駆動回路
JP2025029732A (ja) 2023-08-22 2025-03-07 三菱電機株式会社 ゲート駆動装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242672B2 (ja) 1997-09-30 2001-12-25 三菱電機株式会社 昇圧形アクティブフィルタシステム及び昇圧形アクティブフィルタの制御装置
JP2002185294A (ja) 2000-12-19 2002-06-28 Toshiba Microelectronics Corp 半導体集積回路
JP2007019728A (ja) 2005-07-06 2007-01-25 Auto Network Gijutsu Kenkyusho:Kk 電力供給制御装置
JP2016163051A (ja) 2015-02-26 2016-09-05 株式会社オートネットワーク技術研究所 電力供給装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079442B2 (ja) 1989-09-20 1995-02-01 株式会社東芝 電流検出回路
JP3331601B2 (ja) * 1991-11-22 2002-10-07 関西日本電気株式会社 負荷状態検出回路
JPH07146722A (ja) * 1993-10-01 1995-06-06 Fuji Electric Co Ltd トランジスタ用過電流保護装置
JPH1093355A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 高耐圧パワー集積回路
US7986149B2 (en) * 2008-08-19 2011-07-26 Infineon Technologies Austria Ag System and method for adaptive load fault detection
JP5510478B2 (ja) * 2012-03-02 2014-06-04 株式会社デンソー スイッチング素子の駆動回路
JP5815441B2 (ja) * 2012-03-05 2015-11-17 三菱電機株式会社 スイッチング半導体装置の制御装置
JP5790880B2 (ja) * 2012-06-22 2015-10-07 富士電機株式会社 過電流検出装置及びこれを使用したインテリジェントパワーモジュール
DE112014002021T5 (de) * 2013-04-18 2016-01-28 Fuji Electric Co., Ltd. Schaltelement-Ansteuerkreis
JP5991435B2 (ja) * 2013-07-05 2016-09-14 富士電機株式会社 半導体装置
US9094005B2 (en) * 2013-07-30 2015-07-28 Denso Corporation Semiconductor element module and gate drive circuit
US10728960B2 (en) * 2017-03-16 2020-07-28 Infineon Technologies Ag Transistor with integrated active protection
JP6692323B2 (ja) 2017-06-12 2020-05-13 三菱電機株式会社 半導体装置
US11082039B2 (en) * 2017-11-08 2021-08-03 Gan Systems Inc. GaN transistor with integrated drain voltage sense for fast overcurrent and short circuit protection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242672B2 (ja) 1997-09-30 2001-12-25 三菱電機株式会社 昇圧形アクティブフィルタシステム及び昇圧形アクティブフィルタの制御装置
JP2002185294A (ja) 2000-12-19 2002-06-28 Toshiba Microelectronics Corp 半導体集積回路
JP2007019728A (ja) 2005-07-06 2007-01-25 Auto Network Gijutsu Kenkyusho:Kk 電力供給制御装置
JP2016163051A (ja) 2015-02-26 2016-09-05 株式会社オートネットワーク技術研究所 電力供給装置

Also Published As

Publication number Publication date
US20210184668A1 (en) 2021-06-17
US11658652B2 (en) 2023-05-23
CN112994673A (zh) 2021-06-18
DE102020131358A1 (de) 2021-06-17
CN112994673B (zh) 2025-02-18
JP2021093676A (ja) 2021-06-17

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