DE102020131358B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE102020131358B4
DE102020131358B4 DE102020131358.6A DE102020131358A DE102020131358B4 DE 102020131358 B4 DE102020131358 B4 DE 102020131358B4 DE 102020131358 A DE102020131358 A DE 102020131358A DE 102020131358 B4 DE102020131358 B4 DE 102020131358B4
Authority
DE
Germany
Prior art keywords
voltage
semiconductor device
switching element
circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102020131358.6A
Other languages
German (de)
English (en)
Other versions
DE102020131358A1 (de
Inventor
Yo Habu
Akihisa Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102020131358A1 publication Critical patent/DE102020131358A1/de
Application granted granted Critical
Publication of DE102020131358B4 publication Critical patent/DE102020131358B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102020131358.6A 2019-12-12 2020-11-26 Halbleitervorrichtung Active DE102020131358B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019224421A JP7325314B2 (ja) 2019-12-12 2019-12-12 半導体装置
JP2019-224421 2019-12-12

Publications (2)

Publication Number Publication Date
DE102020131358A1 DE102020131358A1 (de) 2021-06-17
DE102020131358B4 true DE102020131358B4 (de) 2026-05-13

Family

ID=76085314

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020131358.6A Active DE102020131358B4 (de) 2019-12-12 2020-11-26 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US11658652B2 (enExample)
JP (1) JP7325314B2 (enExample)
CN (1) CN112994673B (enExample)
DE (1) DE102020131358B4 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7876949B2 (ja) * 2022-10-27 2026-06-22 三菱電機株式会社 スイッチング素子駆動回路
JP2025029732A (ja) * 2023-08-22 2025-03-07 三菱電機株式会社 ゲート駆動装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69005755T2 (de) 1989-09-20 1994-05-26 Toshiba Kawasaki Kk Strommessschaltung.
JP2008194535A (ja) 2008-05-26 2008-08-28 Okumura Yu-Ki Co Ltd パチンコ機
JP2019004535A (ja) 2017-06-12 2019-01-10 三菱電機株式会社 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3331601B2 (ja) * 1991-11-22 2002-10-07 関西日本電気株式会社 負荷状態検出回路
JPH07146722A (ja) * 1993-10-01 1995-06-06 Fuji Electric Co Ltd トランジスタ用過電流保護装置
JPH1093355A (ja) * 1996-09-18 1998-04-10 Toshiba Corp 高耐圧パワー集積回路
JP3242672B2 (ja) * 1997-09-30 2001-12-25 三菱電機株式会社 昇圧形アクティブフィルタシステム及び昇圧形アクティブフィルタの制御装置
JP3901449B2 (ja) * 2000-12-19 2007-04-04 東芝マイクロエレクトロニクス株式会社 半導体集積回路
JP2007019728A (ja) * 2005-07-06 2007-01-25 Auto Network Gijutsu Kenkyusho:Kk 電力供給制御装置
US7986149B2 (en) * 2008-08-19 2011-07-26 Infineon Technologies Austria Ag System and method for adaptive load fault detection
JP5510478B2 (ja) * 2012-03-02 2014-06-04 株式会社デンソー スイッチング素子の駆動回路
JP5815441B2 (ja) * 2012-03-05 2015-11-17 三菱電機株式会社 スイッチング半導体装置の制御装置
CN104170255B (zh) * 2012-06-22 2017-09-19 富士电机株式会社 过电流检测装置及使用其的智能功率模块
JP6061025B2 (ja) * 2013-04-18 2017-01-18 富士電機株式会社 スイッチング素子駆動回路
JP5991435B2 (ja) * 2013-07-05 2016-09-14 富士電機株式会社 半導体装置
US9094005B2 (en) * 2013-07-30 2015-07-28 Denso Corporation Semiconductor element module and gate drive circuit
JP6260552B2 (ja) * 2015-02-26 2018-01-17 株式会社オートネットワーク技術研究所 電力供給装置
US10728960B2 (en) * 2017-03-16 2020-07-28 Infineon Technologies Ag Transistor with integrated active protection
US11082039B2 (en) * 2017-11-08 2021-08-03 Gan Systems Inc. GaN transistor with integrated drain voltage sense for fast overcurrent and short circuit protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69005755T2 (de) 1989-09-20 1994-05-26 Toshiba Kawasaki Kk Strommessschaltung.
JP2008194535A (ja) 2008-05-26 2008-08-28 Okumura Yu-Ki Co Ltd パチンコ機
JP2019004535A (ja) 2017-06-12 2019-01-10 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20210184668A1 (en) 2021-06-17
CN112994673B (zh) 2025-02-18
JP7325314B2 (ja) 2023-08-14
US11658652B2 (en) 2023-05-23
CN112994673A (zh) 2021-06-18
JP2021093676A (ja) 2021-06-17
DE102020131358A1 (de) 2021-06-17

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R084 Declaration of willingness to licence
R016 Response to examination communication
R018 Grant decision by examination section/examining division