CN112956091A - 一种抗反射激光器 - Google Patents

一种抗反射激光器 Download PDF

Info

Publication number
CN112956091A
CN112956091A CN201880099187.1A CN201880099187A CN112956091A CN 112956091 A CN112956091 A CN 112956091A CN 201880099187 A CN201880099187 A CN 201880099187A CN 112956091 A CN112956091 A CN 112956091A
Authority
CN
China
Prior art keywords
dfb
ofc
laser
modulator
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880099187.1A
Other languages
English (en)
Chinese (zh)
Inventor
沈红明
许奔波
宋小鹿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN112956091A publication Critical patent/CN112956091A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
CN201880099187.1A 2018-11-05 2018-11-05 一种抗反射激光器 Pending CN112956091A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/113927 WO2020093189A1 (zh) 2018-11-05 2018-11-05 一种抗反射激光器

Publications (1)

Publication Number Publication Date
CN112956091A true CN112956091A (zh) 2021-06-11

Family

ID=70612304

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880099187.1A Pending CN112956091A (zh) 2018-11-05 2018-11-05 一种抗反射激光器

Country Status (3)

Country Link
JP (1) JP2022506323A (ja)
CN (1) CN112956091A (ja)
WO (1) WO2020093189A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114976872A (zh) * 2021-02-24 2022-08-30 青岛海信宽带多媒体技术有限公司 一种eml芯片及光模块
CN113991423A (zh) * 2021-09-27 2022-01-28 南京华飞光电科技有限公司 一种基于分布式相位补偿技术的半导体激光器
CN114725772A (zh) * 2022-06-09 2022-07-08 陕西源杰半导体科技股份有限公司 一种具有抗反射功能的eml芯片结构及制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209576A (ja) * 1997-01-16 1998-08-07 Canon Inc 半導体レーザ装置及びその駆動方法
US20010043384A1 (en) * 2000-05-09 2001-11-22 Nec Corporation Light source for integrating modulator and module for optical communication
CN1366367A (zh) * 2001-01-15 2002-08-28 中国科学院半导体研究所 波长可调谐电吸收调制分布反馈激光器和制作方法
CN1452284A (zh) * 2003-05-01 2003-10-29 清华大学 分布反馈半导体激光器与电吸收调制器集成光源及制法
CN101826699A (zh) * 2009-03-04 2010-09-08 中国科学院半导体研究所 电吸收调制器与自脉动激光器单片集成器件的制作方法
CN108649427A (zh) * 2018-05-10 2018-10-12 常州工学院 高效激射输出dfb半导体激光器装置及光子集成发射芯片

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961086A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体発光装置
JPS60187078A (ja) * 1984-03-06 1985-09-24 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6134988A (ja) * 1984-07-26 1986-02-19 Nec Corp 半導体レ−ザ
JPS6170779A (ja) * 1984-09-13 1986-04-11 Nec Corp 光送信装置
JPS61161786A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPH0722215B2 (ja) * 1985-08-05 1995-03-08 日本電気株式会社 集積型半導体レーザ
JPS62245692A (ja) * 1986-04-17 1987-10-26 Nec Corp 外部共振器付分布帰還型半導体レ−ザ
JPS6362388A (ja) * 1986-09-03 1988-03-18 Hitachi Ltd 半導体レ−ザ装置
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ
JPH03147386A (ja) * 1989-11-02 1991-06-24 Canon Inc 変調器付き分布帰還型半導体レーザ
JPH07106699A (ja) * 1993-09-29 1995-04-21 Toshiba Corp 光伝送装置
JPH1187853A (ja) * 1997-09-05 1999-03-30 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
US5991061A (en) * 1997-10-20 1999-11-23 Lucent Technologies Inc. Laser transmitter for reduced SBS
US5991323A (en) * 1997-10-20 1999-11-23 Lucent Technologies Inc. Laser transmitter for reduced signal distortion
CN1779545A (zh) * 2004-11-18 2006-05-31 中国科学院半导体研究所 基于电吸收调制器光开关技术产生超短光脉冲的方法
KR100620391B1 (ko) * 2004-12-14 2006-09-12 한국전자통신연구원 집적형 반도체 광원
US20100290489A1 (en) * 2009-05-15 2010-11-18 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method
CN102742099B (zh) * 2011-12-20 2013-12-18 华为技术有限公司 激光器、无源光网络系统、装置以及波长控制方法
JP2014154835A (ja) * 2013-02-13 2014-08-25 Nippon Telegr & Teleph Corp <Ntt> 光送信器
JP5986519B2 (ja) * 2013-02-21 2016-09-06 日本電信電話株式会社 光送信器
JP2014165392A (ja) * 2013-02-26 2014-09-08 Nippon Telegr & Teleph Corp <Ntt> 光送信器およびその制御方法
ITUB20160994A1 (it) * 2016-02-23 2017-08-23 Prima Electro S P A Diodo laser a semiconduttore e procedimento per la sua realizzazione

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209576A (ja) * 1997-01-16 1998-08-07 Canon Inc 半導体レーザ装置及びその駆動方法
US20010043384A1 (en) * 2000-05-09 2001-11-22 Nec Corporation Light source for integrating modulator and module for optical communication
CN1366367A (zh) * 2001-01-15 2002-08-28 中国科学院半导体研究所 波长可调谐电吸收调制分布反馈激光器和制作方法
CN1452284A (zh) * 2003-05-01 2003-10-29 清华大学 分布反馈半导体激光器与电吸收调制器集成光源及制法
CN101826699A (zh) * 2009-03-04 2010-09-08 中国科学院半导体研究所 电吸收调制器与自脉动激光器单片集成器件的制作方法
CN108649427A (zh) * 2018-05-10 2018-10-12 常州工学院 高效激射输出dfb半导体激光器装置及光子集成发射芯片

Also Published As

Publication number Publication date
WO2020093189A1 (zh) 2020-05-14
JP2022506323A (ja) 2022-01-17

Similar Documents

Publication Publication Date Title
JP5858997B2 (ja) 損失変調シリコンエバネセントレーザー
JP5823920B2 (ja) 半導体光集積素子
US7760782B2 (en) Distributed bragg reflector type directly modulated laser and distributed feed back type directly modulated laser
KR100244821B1 (ko) 발광소자와 외부변조기의 집적소자
US9728938B2 (en) Optical semiconductor device, optical semiconductor device array, and optical transmitter module
JPS6155981A (ja) 半導体発光素子
JP5545847B2 (ja) 光半導体装置
US9762029B2 (en) Semiconductor laser and optical integrated light source including the same
CN112956091A (zh) 一种抗反射激光器
US9601903B2 (en) Horizontal cavity surface emitting laser device
CN106030937A (zh) 可调谐激光器装置
JP5022015B2 (ja) 半導体レーザ素子及びそれを用いた光モジュール
JP4905854B2 (ja) 直接変調波長可変レーザ
CN114094438B (zh) 一种双电极共调制发射激光器
JP6320192B2 (ja) 波長可変光源および波長可変光源モジュール
JP5043880B2 (ja) 半導体素子及びその製造方法
CN107623250B (zh) 一种短腔长面发射激光器及其制造方法
JP2011258785A (ja) 光導波路およびそれを用いた光半導体装置
JP2012002929A (ja) 半導体光素子の製造方法、レーザモジュール、光伝送装置
Aihara et al. Membrane III-V/Si DFB laser with width modulated silicon waveguide for narrowing linewdth
JP3311238B2 (ja) 光半導体装置、及びその製造方法
Zhao et al. High Power Indium Phosphide Photonic Integrated Circuit Platform
Cheng et al. Demonstration of a High-Power and High-Reflection-Tolerance Semiconductor Laser for Co-Packaged Optics
JP2017216353A (ja) 分布帰還型レーザ
US20040114871A1 (en) Integrated optical apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination