CN112956091A - 一种抗反射激光器 - Google Patents
一种抗反射激光器 Download PDFInfo
- Publication number
- CN112956091A CN112956091A CN201880099187.1A CN201880099187A CN112956091A CN 112956091 A CN112956091 A CN 112956091A CN 201880099187 A CN201880099187 A CN 201880099187A CN 112956091 A CN112956091 A CN 112956091A
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- CN
- China
- Prior art keywords
- dfb
- ofc
- laser
- modulator
- reflection
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/113927 WO2020093189A1 (zh) | 2018-11-05 | 2018-11-05 | 一种抗反射激光器 |
Publications (1)
Publication Number | Publication Date |
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CN112956091A true CN112956091A (zh) | 2021-06-11 |
Family
ID=70612304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880099187.1A Pending CN112956091A (zh) | 2018-11-05 | 2018-11-05 | 一种抗反射激光器 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2022506323A (ja) |
CN (1) | CN112956091A (ja) |
WO (1) | WO2020093189A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114976872A (zh) * | 2021-02-24 | 2022-08-30 | 青岛海信宽带多媒体技术有限公司 | 一种eml芯片及光模块 |
CN113991423A (zh) * | 2021-09-27 | 2022-01-28 | 南京华飞光电科技有限公司 | 一种基于分布式相位补偿技术的半导体激光器 |
CN114725772A (zh) * | 2022-06-09 | 2022-07-08 | 陕西源杰半导体科技股份有限公司 | 一种具有抗反射功能的eml芯片结构及制备方法 |
Citations (6)
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JPH10209576A (ja) * | 1997-01-16 | 1998-08-07 | Canon Inc | 半導体レーザ装置及びその駆動方法 |
US20010043384A1 (en) * | 2000-05-09 | 2001-11-22 | Nec Corporation | Light source for integrating modulator and module for optical communication |
CN1366367A (zh) * | 2001-01-15 | 2002-08-28 | 中国科学院半导体研究所 | 波长可调谐电吸收调制分布反馈激光器和制作方法 |
CN1452284A (zh) * | 2003-05-01 | 2003-10-29 | 清华大学 | 分布反馈半导体激光器与电吸收调制器集成光源及制法 |
CN101826699A (zh) * | 2009-03-04 | 2010-09-08 | 中国科学院半导体研究所 | 电吸收调制器与自脉动激光器单片集成器件的制作方法 |
CN108649427A (zh) * | 2018-05-10 | 2018-10-12 | 常州工学院 | 高效激射输出dfb半导体激光器装置及光子集成发射芯片 |
Family Cites Families (22)
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JPS5961086A (ja) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | 半導体発光装置 |
JPS60187078A (ja) * | 1984-03-06 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS6134988A (ja) * | 1984-07-26 | 1986-02-19 | Nec Corp | 半導体レ−ザ |
JPS6170779A (ja) * | 1984-09-13 | 1986-04-11 | Nec Corp | 光送信装置 |
JPS61161786A (ja) * | 1985-01-11 | 1986-07-22 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPH0722215B2 (ja) * | 1985-08-05 | 1995-03-08 | 日本電気株式会社 | 集積型半導体レーザ |
JPS62245692A (ja) * | 1986-04-17 | 1987-10-26 | Nec Corp | 外部共振器付分布帰還型半導体レ−ザ |
JPS6362388A (ja) * | 1986-09-03 | 1988-03-18 | Hitachi Ltd | 半導体レ−ザ装置 |
JPH0831653B2 (ja) * | 1987-07-21 | 1996-03-27 | 国際電信電話株式会社 | 半導体レ−ザ |
JPH03147386A (ja) * | 1989-11-02 | 1991-06-24 | Canon Inc | 変調器付き分布帰還型半導体レーザ |
JPH07106699A (ja) * | 1993-09-29 | 1995-04-21 | Toshiba Corp | 光伝送装置 |
JPH1187853A (ja) * | 1997-09-05 | 1999-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
US5991061A (en) * | 1997-10-20 | 1999-11-23 | Lucent Technologies Inc. | Laser transmitter for reduced SBS |
US5991323A (en) * | 1997-10-20 | 1999-11-23 | Lucent Technologies Inc. | Laser transmitter for reduced signal distortion |
CN1779545A (zh) * | 2004-11-18 | 2006-05-31 | 中国科学院半导体研究所 | 基于电吸收调制器光开关技术产生超短光脉冲的方法 |
KR100620391B1 (ko) * | 2004-12-14 | 2006-09-12 | 한국전자통신연구원 | 집적형 반도체 광원 |
US20100290489A1 (en) * | 2009-05-15 | 2010-11-18 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method |
CN102742099B (zh) * | 2011-12-20 | 2013-12-18 | 华为技术有限公司 | 激光器、无源光网络系统、装置以及波长控制方法 |
JP2014154835A (ja) * | 2013-02-13 | 2014-08-25 | Nippon Telegr & Teleph Corp <Ntt> | 光送信器 |
JP5986519B2 (ja) * | 2013-02-21 | 2016-09-06 | 日本電信電話株式会社 | 光送信器 |
JP2014165392A (ja) * | 2013-02-26 | 2014-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 光送信器およびその制御方法 |
ITUB20160994A1 (it) * | 2016-02-23 | 2017-08-23 | Prima Electro S P A | Diodo laser a semiconduttore e procedimento per la sua realizzazione |
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2018
- 2018-11-05 CN CN201880099187.1A patent/CN112956091A/zh active Pending
- 2018-11-05 JP JP2021523632A patent/JP2022506323A/ja active Pending
- 2018-11-05 WO PCT/CN2018/113927 patent/WO2020093189A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209576A (ja) * | 1997-01-16 | 1998-08-07 | Canon Inc | 半導体レーザ装置及びその駆動方法 |
US20010043384A1 (en) * | 2000-05-09 | 2001-11-22 | Nec Corporation | Light source for integrating modulator and module for optical communication |
CN1366367A (zh) * | 2001-01-15 | 2002-08-28 | 中国科学院半导体研究所 | 波长可调谐电吸收调制分布反馈激光器和制作方法 |
CN1452284A (zh) * | 2003-05-01 | 2003-10-29 | 清华大学 | 分布反馈半导体激光器与电吸收调制器集成光源及制法 |
CN101826699A (zh) * | 2009-03-04 | 2010-09-08 | 中国科学院半导体研究所 | 电吸收调制器与自脉动激光器单片集成器件的制作方法 |
CN108649427A (zh) * | 2018-05-10 | 2018-10-12 | 常州工学院 | 高效激射输出dfb半导体激光器装置及光子集成发射芯片 |
Also Published As
Publication number | Publication date |
---|---|
WO2020093189A1 (zh) | 2020-05-14 |
JP2022506323A (ja) | 2022-01-17 |
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