CN112930261A - 半导体装置制造用的临时保护膜、卷轴体以及制造半导体装置的方法 - Google Patents
半导体装置制造用的临时保护膜、卷轴体以及制造半导体装置的方法 Download PDFInfo
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- CN112930261A CN112930261A CN201980070533.8A CN201980070533A CN112930261A CN 112930261 A CN112930261 A CN 112930261A CN 201980070533 A CN201980070533 A CN 201980070533A CN 112930261 A CN112930261 A CN 112930261A
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- protective film
- temporary protective
- semiconductor device
- adhesive layer
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 230000001681 protective effect Effects 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 17
- 239000012790 adhesive layer Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229920000800 acrylic rubber Polymers 0.000 claims abstract description 31
- 229920000058 polyacrylate Polymers 0.000 claims abstract description 31
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 112
- 238000007789 sealing Methods 0.000 claims description 49
- 239000010410 layer Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000001931 aliphatic group Chemical group 0.000 claims description 9
- 238000004804 winding Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 230000009477 glass transition Effects 0.000 claims description 7
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical group CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical group OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013039 cover film Substances 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 4
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- 238000005389 semiconductor device fabrication Methods 0.000 claims 6
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000002966 varnish Substances 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- -1 glycidyloxy, acryloyloxy, methacryloyloxy, mercapto, amino, vinyl Chemical group 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 150000007824 aliphatic compounds Chemical class 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000004843 novolac epoxy resin Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 125000005370 alkoxysilyl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000600 sorbitol Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 241000219871 Ulex Species 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007707 calorimetry Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/04—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B25/08—Layered products comprising a layer of natural or synthetic rubber comprising rubber as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/42—Nitriles
- C08F220/44—Acrylonitrile
-
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
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Abstract
本发明公开有一种半导体装置制造用的临时保护膜,所述临时保护膜用于对半导体基板的与供半导体元件搭载的面相反的一侧的面进行临时保护。临时保护膜包括含有丙烯酸橡胶的黏合层。将临时保护膜以黏合层与铜合金板相接的方式在25℃下贴附于铜合金板,对所获得的贴合体以180℃、60分钟及200℃、60分钟的顺序进行加热,临时保护膜相对于铜合金板的90度剥离强度在贴合体加热前为25℃下5N/m以上,在贴合体加热后为50℃下150N/m以下。
Description
技术领域
本发明涉及一种半导体装置制造用的临时保护膜、卷轴体以及制造半导体装置的方法。
背景技术
提出了一种如下结构的半导体封装:将半导体元件密封的密封层仅设置于引线框及有机基板等半导体用基板的其中一面侧,半导体用基板的背面露出。这种结构的半导体封装例如可通过如下方法而制造:将具有黏合层的临时保护膜贴附于具有开口部的半导体用基板的背面,由此临时保护半导体用基板的背面,在该状态下,将搭载于半导体用基板的表面侧的半导体元件密封,之后,剥离临时保护膜。通过使用临时保护膜,可防止密封成型时密封树脂绕入至半导体用基板的背面等不良情况(例如专利文献1)。
以往技术文献
专利文献
专利文献1:国际公开第2001/035460号
发明内容
发明要解决的技术课题
用于制造半导体装置的临时保护膜理想为可在常温下贴附于半导体用基板,且在高温下的加热后,可容易自半导体用基板剥离。但是,在常温下的贴附性相对较良好的临时保护膜的情况下,例如存在如下情况:在180℃以上的高温下的加热后,难以将临时保护膜自半导体用基板剥离,或者在剥离临时保护膜后,黏合层的一部分残留于半导体用基板上或密封层上。
因此,本发明提供一种半导体装置制造用的临时保护膜,其可在常温下容易贴附于半导体用基板,并且在高温下加热后,可抑制半导体用基板及密封层上的残留物的产生,同时容易剥离。
用于解决技术课题的手段
本发明的一方面涉及一种半导体装置制造用的临时保护膜,所述临时保护膜在制造具有半导体用基板及搭载于该半导体用基板的半导体元件的半导体装置的方法中,用于对所述半导体用基板的与供所述半导体元件搭载的面相反的一侧的面进行临时保护。该临时保护膜包括支撑膜以及设置于所述支撑膜的单面或两面上的黏合层。所述黏合层含有丙烯酸橡胶。将所述临时保护膜以所述黏合层与铜合金板相接的方式在25℃下贴附于所述铜合金板,所述铜合金板具有铜合金的表面,对由此而获得的贴合体以180℃、60分钟及200℃、60分钟的顺序进行加热,所述临时保护膜相对于所述铜合金板的90度剥离强度在所述贴合体加热前为25℃下5N/m以上,在所述贴合体加热后为50℃下150N/m以下。
本发明的另一方面涉及一种卷轴体,其包括具有筒状的卷绕部的卷轴以及卷绕于所述卷绕部的、所述半导体装置制造用的临时保护膜。
本发明的进而另一方面涉及一种制造半导体装置的方法,其依次包括:将所述半导体装置制造用的临时保护膜以其黏合层与半导体用基板相接的朝向贴附于所述半导体用基板的单面的工序;将半导体元件搭载于所述半导体用基板的与所述临时保护膜相反的一侧的面上的工序;形成将所述半导体元件密封的密封层,从而获得具有所述半导体用基板、所述半导体元件及所述密封层的密封成型体的工序;以及自所述密封成型体剥离所述临时保护膜的工序。
发明效果
根据本发明,可提供一种半导体装置制造用的临时保护膜,其可在常温下容易贴附于半导体用基板,并且在高温下加热后,可抑制密封层上的残留物的产生,同时容易剥离。
附图说明
图1是表示临时保护膜的一实施方式的剖视图。
图2是表示制造半导体装置的方法的一实施方式的剖视图。
图3是表示制造半导体装置的方法的一实施方式的剖视图。
具体实施方式
以下,对本发明的优选实施方式进行详细说明。但是,本发明并不限定于以下的实施方式。本说明书中所记载的数值范围的上限值及下限值可任意地组合。实施例中所记载的数值也可用作数值范围的上限值或下限值。在本说明书中,所谓“(甲基)丙烯酸”是指“丙烯酸”及“甲基丙烯酸”。
<临时保护膜>
图1是表示一实施方式所涉及的临时保护膜的剖视图。图1所示的临时保护膜10包括支撑膜1以及设置于支撑膜1的单面上的黏合层2。也可在支撑膜1的两面上形成黏合层。该临时保护膜在制造具有半导体基板及搭载于半导体基板的半导体元件的半导体装置的方法中,用于对半导体基板的与供半导体元件搭载的面相反的一侧的面进行临时保护。例如,在形成将搭载于半导体基板(例如引线框)的半导体元件密封的密封层的工序期间,可将临时保护膜贴附于半导体基板来临时保护半导体基板。
黏合层2含有丙烯酸橡胶。丙烯酸橡胶通常为包含(甲基)丙烯酸烷基酯作为主要单体单元的共聚物。相对于丙烯酸橡胶总体,丙烯酸橡胶中的源自(甲基)丙烯酸烷基酯的单体单元((甲基)丙烯酸烷基酯单元)的比例可为50质量%以上。构成丙烯酸橡胶的(甲基)丙烯酸烷基酯,例如可为选自由(甲基)丙烯酸正丁酯、(甲基)丙烯酸乙酯及(甲基)丙烯酸甲酯所组成的组中的至少一种。
作为构成丙烯酸橡胶的(甲基)丙烯酸烷基酯以外的单体的例子,可列举:(甲基)丙烯酸、(甲基)丙烯酸-2-羟基乙酯及丙烯腈。丙烯酸橡胶可为包含(甲基)丙烯酸烷基酯单元、(甲基)丙烯酸单元及/或丙烯酸-2-羟基乙酯单元以及丙烯腈单元的共聚物,也可为包含(甲基)丙烯酸烷基酯单元、(甲基)丙烯酸单元及/或丙烯酸-2-羟基乙酯单元、丙烯腈单元以及(甲基)丙烯酸缩水甘油酯单元的共聚物。通过使用主要包含这些单体单元的丙烯酸橡胶,可特别容易获得具有后述的规定黏合力(bond force)的临时保护膜。相对于丙烯酸橡胶总体的质量,具有不具有取代基的烷基的(甲基)丙烯酸烷基酯单元、(甲基)丙烯酸单元、丙烯酸-2-羟基乙酯单元及丙烯腈单元的合计比例或者具有不具有取代基的烷基的(甲基)丙烯酸烷基酯单元、(甲基)丙烯酸单元、丙烯酸-2-羟基乙酯单元、丙烯腈单元及(甲基)丙烯酸缩水甘油酯单元的合计比例可为90质量%以上、95质量%以上或97质量%以上。
就维持黏合层在常温下的贴附性的观点而言,丙烯酸橡胶的玻璃化转变温度(Tg)可为-70℃~40℃、-60℃~30℃或-50℃~20℃。此处,丙烯酸橡胶的玻璃化转变温度是指通过差示扫描热量测定、差示热测定、动态黏弹性测定或热机械分析而测定的值。玻璃化转变温度可为根据单体单元的种类及共聚比而求出的理论值。
丙烯酸橡胶的重均分子量可影响黏合层的凝聚力。凝聚力弱的黏合层有在剥离后容易在密封层上产生残留物的倾向。就所述观点而言,丙烯酸橡胶的重均分子量可为50000以上、100000以上或150000以上,也可为900000以下。此处的丙烯酸橡胶的重均分子量是指通过凝胶渗透色谱法而测定的值。
丙烯酸橡胶也可在不脱离本发明的主旨的范围内使用于市售品的形式获取。作为丙烯酸橡胶的市售品,例如可列举HTR-280DR(长濑化成(Nagase Chemtex)股份有限公司制造,重均分子量80万~90万)、WS-023EK30(长濑化成(Nagase Chemtex)股份有限公司制造,重均分子量45万~50万)。也可组合使用两种以上的丙烯酸橡胶。
黏合层2中的丙烯酸橡胶的含量以黏合层2的质量为基准而可为50质量%以上、60质量%以上、70质量%以上或80质量%以上,也可为100质量%以下。
临时保护膜10在常温下贴附于半导体基板后及其后的加热处理后,相对于半导体基板具有规定黏合力。临时保护膜10相对于半导体基板的黏合力可通过临时保护膜10相对于假定作为半导体基板的一例的引线框的、具有铜合金的表面的铜合金板的90度剥离强度来评价。具体而言,将临时保护膜10以黏合层2与铜合金板相接的方式在25℃下贴附于铜合金板,对所获得的贴合体以180℃、60分钟及200℃、60分钟的顺序进行加热,临时保护膜相对于铜合金板的90度剥离强度在贴合体加热前为25℃下5N/m以上,在贴合体加热后为50℃下150N/m以下。有时将以180℃、60分钟及200℃、60分钟的顺序加热贴合体前的90度剥离强度称为“常温贴附后的黏合力”。有时将以180℃、60分钟及200℃、60分钟的顺序加热贴合体后的90度剥离强度称为“加热处理后的黏合力”。
为了获得上述贴合体,例如,具有40mm×160mm的尺寸的临时保护膜在25℃的环境下,通过20N的负荷而压接于铜合金板。铜合金板例如具有50mm×157mm的尺寸。构成铜合金板的铜合金例如可为CDA194之类的Cu-Fe-P系合金。作为铜合金板,可使用未由镀钯等被覆的、具有铜合金的最表层的铜合金板。90度剥离强度是将贴附于铜合金板的临时保护膜在相对于铜合金板的主面而为90度的方向上剥离时的、临时保护膜的黏合层的每宽度10mm的负荷(N/m)的最大值。剥离的速度为50mm/min。常温贴附后的黏合力是在25℃的环境下测定的。加热处理后的黏合力是在50℃的环境下测定的。
临时保护膜的常温贴附后的黏合力可为25℃下10N/m以上、20N/m以上或30N/m以上,也可为200N/m以下或150N/m以下。临时保护膜的加热处理后的黏合力可为50℃下100N/m以下或90N/m以下,也可为10N/m以上。
黏合层2也可进一步含有剥离性赋予剂。通过使用包含丙烯酸橡胶与剥离性赋予剂的组合的黏合层,可特别容易获得具有上述规定黏合力的临时保护膜。所谓剥离性赋予剂是与黏合层不含有剥离性赋予剂的情况相比而使加热后的黏合层相对于半导体用基板或密封层的黏合力降低的成分。若在黏合层中添加剥离性赋予剂,则产生因存在于表面的官能团的影响而与半导体基板的相互作用变弱,或者表面自由能量变化而润湿性降低等黏合层的最表面的状态的变化。
剥离性赋予剂例如可包含具有直链状、分支状或脂环式的烃基的脂肪族化合物。脂肪族化合物可具有选自环氧基、羟基及氨基中的至少一种官能团。脂肪族化合物可具有选自氨基、羧基、异氰酸酯基及脲基中的至少一种官能团。特别是,剥离性赋予剂也可包含具有脂肪族基及键合于脂肪族基的缩水甘油醚基的脂肪族环氧化合物。脂肪族环氧化合物可具有两个以上的环氧基,也可进一步具有羟基。脂肪族环氧化合物可具有碳数2~10的烃基。作为可用作剥离性赋予剂的脂肪族环氧化合物的例子,可包含选自由山梨糖醇聚缩水甘油醚、乙二醇二缩水甘油醚及甘油聚缩水甘油醚所组成的组中的至少一种脂肪族化合物(或脂肪族环氧树脂)。这些脂肪族化合物可单独使用一种,也可同时使用两种以上。
剥离性赋予剂可为具有烷氧基甲硅烷基的化合物。具有烷氧基甲硅烷基的化合物例如由下述式(1)表示。
[化学式1]
式(1)中,X表示苯基、缩水甘油氧基、丙烯酰氧基、甲基丙烯酰氧基、巯基、氨基、乙烯基或异氰酸酯基,s表示0~10的整数,R11、R12及R13分别独立地表示碳数1~10的烷基。作为R11、R12或R13所表示的碳数1~10的烷基的例子,可列举:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、异丙基及异丁基。R11、R12及R13可分别独立地为甲基、乙基或戊基。就耐热性的观点而言,X可为氨基、缩水甘油氧基、巯基或异氰酸酯基,也可为缩水甘油氧基或巯基。
相对于丙烯酸橡胶100质量份,剥离性赋予剂的合计含量可为0.1质量份以上且小于50质量份、40质量份以下、35质量份以下或30质量份以下,也可为1质量份以上且小于50质量份、40质量份以下、35质量份以下或30质量份以下,也可为3质量份以上且小于50质量份、40质量份以下、35质量份以下或30质量份以下,也可为5质量份以上且小于50质量份、40质量份以下、35质量份以下或30质量份以下,也可为7质量份以上且小于50质量份、40质量份以下、35质量份以下或30质量份以下。若剥离性赋予剂的含量处于这些数值范围内,则特别容易获得具有上述规定黏合力的临时保护膜。以黏合层的质量为基准,丙烯酸橡胶及剥离性赋予剂的含量可为80质量%~100质量%、90质量%~100质量%或95质量%~100质量%。
黏合层2也可进一步包含其他成分。作为其他成分的例子,可列举:抗氧化剂、紫外线吸收剂、填充剂(例如无机填料、导电性粒子或颜料)、蜡等润滑剂、增黏剂、塑化剂、固化促进剂及荧光色素。
黏合层2的厚度例如可为1μm~100μm。若黏合层2厚,则有进一步抑制剥离后的黏合层的残留物的倾向。因此,黏合层2的厚度可为2μm以上、5μm以上、6μm以上或8μm以上。就抑制导线接合(wire bonding)中的不良状况等的观点而言,黏合层2的厚度可为80μm以下或60μm以下。若黏合层2的厚度薄于2μm,则黏合力不足,有时产生在工序的中途自被黏合体剥离的不良情况。黏合层2的厚度可为2μm以上且80μm以下或60μm以下,也可为5μm以上且80μm以下或60μm以下,也可为6μm以上且80μm以下或60μm以下,也可为8μm以上且80μm以下或60μm以下。
支撑膜1例如可为芳香族聚酰亚胺、芳香族聚酰胺、芳香族聚酰胺酰亚胺、芳香族聚砜、芳香族聚醚砜、聚苯硫醚、芳香族聚醚酮、聚芳酯、芳香族聚醚醚酮或聚萘二甲酸乙二酯的膜。
支撑膜1在20℃~200℃下的线热膨胀系数可为3.0×10-5/℃以下。支撑膜1在200℃下加热2小时时的加热收缩率可为0.15%以下。例如,芳香族聚酰亚胺膜大多具有这些特性。
支撑膜1也可进行等离子体处理、电晕处理、底漆处理等表面处理。
就抑制将临时保护膜贴附于半导体基板后的半导体基板的翘曲的观点而言,支撑膜1的厚度可为200μm以下、100μm以下或50μm以下,也可为10μm以上。
临时保护膜也可进一步包括覆盖膜,所述覆盖膜覆盖黏合层2的与支撑膜1相反的一侧的面。覆盖膜例如可为聚对苯二甲酸乙二酯(Polyethylene terephthalate,PET)膜。覆盖膜可具有剥离性层。覆盖膜的厚度可为10μm~100μm或20μm~100μm。
临时保护膜10例如可通过如下方法而获得,所述方法包括:将含有丙烯酸橡胶;环己酮、甲基乙基酮等溶剂;及视需要的剥离性赋予剂等其他成分的清漆涂布于支撑膜1;以及通过加热而自涂膜去除溶剂,从而在支撑膜1上形成黏合层2。
作为将清漆涂布于支撑膜的方法,并无特别限制,例如可列举使用辊涂布、逆辊涂布、凹版涂布、棒涂布、缺角轮涂布、模涂布、减压模涂布的方法。
可将长条的临时保护膜卷绕于卷轴,一边自所获得的卷轴体卷出临时保护膜,一边制造半导体装置。该情况下的卷轴体包括具有筒状的卷绕部的卷轴以及卷绕于卷绕部的上述实施方式所涉及的临时保护膜。
<半导体装置的制造方法>
例如,可使用一实施方式所涉及的临时保护膜来制造半导体装置,所述半导体装置具有作为半导体基板的一例的引线框及搭载于其的半导体元件以及在引线框的半导体元件侧将半导体元件密封的密封层,并且引线框的背面露出,以便用于外部连接。具有这种结构的半导体装置有时称为无引线型封装(Non Lead Type Package)。作为其具体例,可列举方形扁平无引脚封装(QuadFlat Non-leaded Package,QFN)、小外型无引脚封装(SmallOutline Non-leaded Package,SON)。
以下,参考附图对半导体装置的制造方法进行具体说明。但是,通过本实施方式的制造方法而获得的半导体装置并不限定于具有以下所例示的结构。图2及图3是表示一实施方式所涉及的半导体装置的制造方法的剖视图。图2及图3的实施方式所涉及的方法包括:将临时保护膜10在黏合层2与引线框11相接的朝向上贴附于引线框11的单面(背面)的工序,所述引线框11具有多个芯片焊盘11a及内引线11b;将半导体元件14黏合(搭载)于芯片焊盘11a的工序;设置导线12的工序,所述导线12将半导体元件14与内引线11b连接;形成将引线框11的半导体元件14侧的表面、半导体元件14及导线12覆盖的密封层13,从而获得具有引线框11、半导体元件14及密封层13的密封成型体20的工序;自密封成型体20剥离临时保护膜10的工序;以及将密封成型体20分割而获得多个分别具有一个半导体元件14的半导体装置100的工序。
临时保护膜10对于引线框11的贴附可在常温(例如5℃~35℃)下进行。贴附的方法并无特别限制,例如可为辊层压法。
引线框11的材质并无特别限制,例如可为42合金等铁系合金、铜或铜合金。在使用铜及铜合金的引线框的情况下,也可对引线框的表面实施钯、金、银等被覆处理。为了提高与密封材料的密合力,也可对引线框表面进行物理性粗化处理。也可对引线框表面实施防止银糊料的渗出的树脂渗出(Epoxy Bleed Out,EBO)防止处理等化学性处理。
半导体元件14通常通过压敏黏合剂(μressure-sensitive adhesive)(例如银糊料)而黏合于芯片焊盘11a上。也可通过加热处理(例如140℃~200℃、30分钟~2小时)而使压敏黏合剂固化。
导线12并无特别限制,例如可为金线、铜线、铝或钯被覆铜线。例如,也可在200℃~270℃下加热3分钟~60分钟,并利用超声波与按压压力而将半导体元件及内引线与导线12接合。
在利用导线12进行导线接合后且形成密封层13的工序前,也可对引线框11实施等离子体处理。通过等离子体处理而进一步提高密封层与引线框的密合性,由此,可进一步提高半导体装置的可靠性。作为等离子体处理,例如可列举在减压条件(例如10Pa以下)下,以规定气体流量注入氩气、氮气、氧气等气体来进行等离子体照射的方法。等离子体处理中的等离子体的照射输出例如可为10W~500W。等离子体处理的时间例如可为5秒钟~50秒钟。等离子体处理中的气体流量可为5sccm~50sccm。
密封成型的工序中,使用密封材料来形成密封层13。通过密封成型,可获得具有多个半导体元件14及一次性将这些半导体元件密封的密封层13的密封成型体20。在密封成型期间,因设置有临时保护膜10而可抑制密封材料绕入至引线框11的背面侧。
形成密封层13期间的温度(密封温度)可为140℃~200℃,也可为160℃~180℃。形成密封层期间的压力(密封压力)可为6MPa~15MPa,也可为7MPa~10MPa。密封成型中的加热时间(密封时间)可为1分钟~5分钟,也可为2分钟~3分钟。
密封材料的材质并无特别限制,例如可列举:甲酚酚醛清漆环氧树脂、苯酚酚醛清漆环氧树脂、联苯二环氧树脂、萘酚酚醛清漆环氧树脂等环氧树脂。密封材料也可包含填料、阻燃性物质(例如溴化合物等)、蜡等添加材料。
在形成密封层13后,自所获得的密封成型体20的引线框11及密封层13剥离临时保护膜10。在使密封层13固化的情况下,也可在使密封层13固化前或固化后的任意时间点剥离临时保护膜10。
剥离临时保护膜10时的温度并无特别限制,可为常温(例如5℃~35℃)。该温度也可为黏合层的玻璃化转变温度以上。该情况下,临时保护膜相对于引线框及密封层的剥离性更进一步良好。若黏合层中的丙烯酸橡胶的Tg例如为5℃以下或0℃以下,则容易获得常温下的良好的剥离性。
使用一实施方式所涉及的临时保护膜而制造的半导体装置在高密度化、小面积化、薄型化等方面优异。因此,可将半导体装置用于例如手机、智能手机、个人笔记本电脑、平板电脑等电子设备中。
实施例
以下,通过实施例进一步具体地说明本发明,但本发明并不限定于以下的实施例。
1.临时保护膜的制造
1-1.涂饰用清漆的制作
将具有表1所示的组成(单位:质量份)的树脂组合物与作为溶剂的环己酮混合,对混合物进行搅拌而获得溶剂以外的成分的浓度为12质量%的清漆A~清漆E。表中所示的丙烯酸橡胶及剥离性赋予剂的详细情况如下所述。
丙烯酸橡胶
·WS-023EK30(商品名,长濑化成(Nagase Chemtex)股份有限公司制造,重均分子量:50万,玻璃化转变温度(根据共聚比而计算的理论值):-10℃)
·HTR-280DR(商品名,长濑化成(Nagase Chemtex)股份有限公司制造,重均分子量:90万,玻璃化转变温度(根据共聚比而计算的理论值):-29℃)
剥离性赋予剂
·EX-614B(商品名,长濑化成(Nagase Chemtex)股份有限公司制造,山梨糖醇聚缩水甘油醚,环氧当量:174)
·EX-810(商品名,长濑化成(Nagase Chemtex)股份有限公司制造,乙二醇二缩水甘油醚,环氧当量:113)
[表1]
1-2.临时保护膜
作为支撑膜,准备芳香族聚酰亚胺膜(宇部兴产股份有限公司制造,商品名:尤皮莱克斯(UPILEX)25SGADS,膜厚:25μm)。在该支撑膜上涂布清漆A、清漆B、清漆C、清漆D或清漆E。通过将涂膜在90℃下加热2分钟及在180℃下加热2分钟而加以干燥,从而形成厚度2μm、厚度6μm、厚度10μm或厚度60μm的黏合层,从而获得实施例1~实施例9及比较例1、比较例2的临时保护膜。各实施例及比较例中的清漆与黏合层的厚度的组合如表2所示。
2.评价
2-1.黏合层的黏合力
(1)常温下的贴附后的黏合力
作为被黏合体,准备CDA194板(Cu-Fe-P系合金,新光电气工业股份有限公司制造)及CDA194镀钯板(PPF,新光电气工业股份有限公司制造)。这些引线框具有50mm×157mm的尺寸。使用手压辊,将切成40mm×160mm的尺寸的各临时保护膜在黏合层与引线框相接的朝向上且在25℃、负荷20N的条件下贴附于这些引线框上。之后,使用测力计(force gauge),在25℃下且在相对于引线框的主面而为90度的方向上以50mm/min的速度剥离各临时保护膜。记录此时的黏合层的每宽度10mm的负荷的最大值(N/m)作为常温贴附后的黏合力(90度剥离强度)。
(2)加热处理后的黏合力
作为被黏合体,准备CDA194板(Cu-Fe-P系合金,新光电气工业股份有限公司制造)及CDA194镀钯板(PPF,新光电气工业股份有限公司制造)。这些引线框具有50mm×157mm的尺寸。使用手压辊,将切成40mm×160mm的尺寸的各临时保护膜在黏合层与引线框相接的朝向上且在25℃、负荷20N的条件下贴附于这些引线框上。将所获得的贴合体在空气环境气体下且在烘箱内以180℃加热处理60分钟,之后以200℃加热处理60分钟。其后,使用测力计,在50℃下且在相对于引线框的主面而为90度的方向上以50mm/min的速度剥离临时保护膜。记录此时的黏合层的每宽度10mm的负荷的最大值(N/m)作为加热处理后的黏合力(90度剥离强度)。
2-2.密封成型后的黏合层的残留物
将实施例及比较例的临时保护膜在黏合层与引线框相接的朝向上且在25℃、负荷20N的条件下贴附于CDA194框(引线框,新光电气工业股份有限公司制造)。在空气环境气体下且在烘箱内,以180℃、60分钟,之后200℃、60分钟的顺序改变条件,同时对所获得的贴合体进行加热。在氩气环境气体下(流量:20sccm)、150W、15秒的条件下对引线框的与临时保护膜相反的一侧的面进行等离子体处理。
使用铸模成型机(爱匹克山田(APICYAMADA)股份有限公司制造),并通过密封材料(商品名:GE-300,日立化成股份有限公司制造)而在引线框的与临时保护膜相反的一侧的面上形成密封层。密封条件设为175℃、6.8MPa、2分钟。其后,在50℃下且在相对于引线框的面而为90°的方向上以50mm/min的速度剥离各临时保护膜。确认剥离临时保护膜后的密封层上所残留的黏合层的状态。求出黏合层的残留物所占的面积相对于密封层的表面的面积的比例。根据黏合层的残留物所占的面积的比例,按以下的5个阶段的基准来评价密封成型后的剥离性。
5:60%~100%
4:40%~小于60%
3:20%以上且小于40%
2:10%以上且小于20%
1:0%~小于10%
将以上的评价结果示于表2中。各实施例的临时保护膜可在常温下贴附于引线框,在加热处理后,可容易自引线框剥离。密封成型后,可一边抑制引线框上及密封层上的残留物的产生,一边自密封成型体剥离临时保护膜。
符号说明
1-支撑膜,2-黏合层,10-临时保护膜,11-引线框,11a-芯片焊盘,11b-内引线,12-导线,13-密封层,14-半导体元件,20-密封成型体,100-半导体装置。
Claims (11)
1.一种半导体装置制造用的临时保护膜,所述临时保护膜在制造具有半导体基板及搭载于该半导体基板的半导体元件的半导体装置的方法中,用于对所述半导体基板的与供所述半导体元件搭载的面相反的一侧的面进行临时保护,
所述临时保护膜包括支撑膜以及设置于所述支撑膜的单面或两面上的黏合层,
所述黏合层含有丙烯酸橡胶,
将所述临时保护膜以所述黏合层与铜合金板相接的方式在25℃下贴附于具有铜合金的表面的所述铜合金板,对由此而获得的贴合体以180℃下60分钟及200℃下60分钟的顺序进行加热,所述临时保护膜相对于所述铜合金板的90度剥离强度在所述贴合体加热前为25℃下5N/m以上,在所述贴合体加热后为50℃下150N/m以下。
2.根据权利要求1所述的半导体装置制造用的临时保护膜,其中,
所述黏合层的厚度为2μm以上且100μm以下。
3.根据权利要求1或2所述的半导体装置制造用的临时保护膜,其中,
所述丙烯酸橡胶为包含(甲基)丙烯酸烷基酯单元、(甲基)丙烯酸单元及/或丙烯酸-2-羟基乙酯单元、以及丙烯腈单元的共聚物,相对于所述丙烯酸橡胶总体的质量,这些单体单元的合计比例为90质量%以上。
4.根据权利要求1至3中任一项所述的半导体装置制造用的临时保护膜,其中,
所述丙烯酸橡胶的玻璃化转变温度为-50℃~20℃。
5.根据权利要求1至4中任一项所述的半导体装置制造用的临时保护膜,其中,
所述丙烯酸橡胶的重均分子量为150000~900000。
6.根据权利要求1至5中任一项所述的半导体装置制造用的临时保护膜,其中,
所述黏合层进一步含有剥离性赋予剂。
7.根据权利要求6所述的半导体装置制造用的临时保护膜,其中,
相对于所述丙烯酸橡胶100质量份,所述剥离性赋予剂的含量为0.1质量份以上且小于50质量份。
8.根据权利要求6或7所述的半导体装置制造用的临时保护膜,其中,
所述剥离性赋予剂包含具有脂肪族基及键合于该脂肪族基的缩水甘油醚基的脂肪族环氧化合物。
9.根据权利要求1至8中任一项所述的半导体装置制造用的临时保护膜,其进一步包括覆盖所述黏合层的与所述支撑膜相反的一侧的面的覆盖膜。
10.一种卷轴体,其包括:
卷轴,具有筒状的卷绕部;以及
权利要求1至9中任一项所述的半导体装置制造用的临时保护膜,卷绕于所述卷绕部。
11.一种制造半导体装置的方法,其依次包括:
将权利要求1至9中任一项所述的半导体装置制造用的临时保护膜以其黏合层与半导体基板相接的朝向贴附于所述半导体基板的单面的工序;
将半导体元件搭载于所述半导体基板的与所述临时保护膜相反的一侧的面上的工序;
形成将所述半导体元件密封的密封层,从而获得具有所述半导体基板、所述半导体元件及所述密封层的密封成型体的工序;以及
自所述密封成型体剥离所述临时保护膜的工序。
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