CN112850809A - 一种中空Zn-Co-Ni-S纳米笼超级电容器电极材料及其制备方法 - Google Patents
一种中空Zn-Co-Ni-S纳米笼超级电容器电极材料及其制备方法 Download PDFInfo
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- CN112850809A CN112850809A CN202110114589.8A CN202110114589A CN112850809A CN 112850809 A CN112850809 A CN 112850809A CN 202110114589 A CN202110114589 A CN 202110114589A CN 112850809 A CN112850809 A CN 112850809A
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- 239000007772 electrode material Substances 0.000 title claims abstract description 31
- 239000002091 nanocage Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 48
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 238000010992 reflux Methods 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- -1 zeolite imidazole ester Chemical class 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000004073 vulcanization Methods 0.000 claims abstract description 8
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 claims abstract description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010457 zeolite Substances 0.000 claims abstract description 6
- 229910021536 Zeolite Inorganic materials 0.000 claims abstract description 5
- QGUAJWGNOXCYJF-UHFFFAOYSA-N cobalt dinitrate hexahydrate Chemical compound O.O.O.O.O.O.[Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QGUAJWGNOXCYJF-UHFFFAOYSA-N 0.000 claims abstract description 5
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 claims abstract description 5
- HSSJULAPNNGXFW-UHFFFAOYSA-N [Co].[Zn] Chemical compound [Co].[Zn] HSSJULAPNNGXFW-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 3
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 4
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 3
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 8
- 239000000243 solution Substances 0.000 description 29
- 238000001035 drying Methods 0.000 description 24
- 239000011259 mixed solution Substances 0.000 description 20
- 239000000047 product Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000001291 vacuum drying Methods 0.000 description 12
- 238000005406 washing Methods 0.000 description 12
- 239000002244 precipitate Substances 0.000 description 8
- 239000008151 electrolyte solution Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000012621 metal-organic framework Substances 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- JBFYUZGYRGXSFL-UHFFFAOYSA-N imidazolide Chemical compound C1=C[N-]C=N1 JBFYUZGYRGXSFL-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- YGHCWPXPAHSSNA-UHFFFAOYSA-N nickel subsulfide Chemical compound [Ni].[Ni]=S.[Ni]=S YGHCWPXPAHSSNA-UHFFFAOYSA-N 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/11—Sulfides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G53/00—Compounds of nickel
- C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Microelectronics & Electronic Packaging (AREA)
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- Materials Engineering (AREA)
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- Electric Double-Layer Capacitors Or The Like (AREA)
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CN202110114589.8A CN112850809B (zh) | 2021-01-19 | 2021-01-19 | 一种中空Zn-Co-Ni-S纳米笼超级电容器电极材料及其制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113336279A (zh) * | 2021-06-16 | 2021-09-03 | 济南大学 | 一种中空结构的Ni-Co-S纳米多面体材料及其制备与应用 |
CN113745009A (zh) * | 2021-08-26 | 2021-12-03 | 江苏大学 | 二元纳米复合材料Co3S4/NiCo2S4的制备方法及其应用于超级电容器电极 |
CN114420461A (zh) * | 2022-01-07 | 2022-04-29 | 常州大学 | 一种MOFs衍生的中空锌钴硫化物电极材料及其制备方法 |
CN114653374A (zh) * | 2022-04-02 | 2022-06-24 | 北京师范大学 | 一种双金属氢氧化物及其制备方法和应用 |
CN115295317A (zh) * | 2022-06-28 | 2022-11-04 | 电子科技大学长三角研究院(湖州) | 一种原位生长电极材料的制备方法及其应用 |
CN115321603A (zh) * | 2022-09-05 | 2022-11-11 | 盐城工学院 | 一种过渡金属硫化物纳米笼材料的制备方法 |
CN115432744A (zh) * | 2022-08-23 | 2022-12-06 | 合肥国轩高科动力能源有限公司 | 一种中空纳米笼双金属氢氧化物材料的制备方法及应用 |
CN118004978A (zh) * | 2024-04-10 | 2024-05-10 | 洛阳理工学院 | 一种含多重异质界面金属硒化物材料及其制备方法和应用 |
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CN107740135A (zh) * | 2017-09-30 | 2018-02-27 | 哈尔滨工业大学 | 一种中空介孔结构NiCoS多面体的制备方法及其应用 |
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CN111573743A (zh) * | 2020-04-27 | 2020-08-25 | 扬州大学 | 双层空心十二面体锌钴基硫化物复合材料及其制备方法 |
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2021
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CN111573743A (zh) * | 2020-04-27 | 2020-08-25 | 扬州大学 | 双层空心十二面体锌钴基硫化物复合材料及其制备方法 |
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JING, CHUAN 等: "Chemical Modifications of Layered Double Hydroxides in the Supercapacitor", 《ENERGY & ENVIRONMENTAL MATERIALS》 * |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113336279A (zh) * | 2021-06-16 | 2021-09-03 | 济南大学 | 一种中空结构的Ni-Co-S纳米多面体材料及其制备与应用 |
CN113745009A (zh) * | 2021-08-26 | 2021-12-03 | 江苏大学 | 二元纳米复合材料Co3S4/NiCo2S4的制备方法及其应用于超级电容器电极 |
CN114420461A (zh) * | 2022-01-07 | 2022-04-29 | 常州大学 | 一种MOFs衍生的中空锌钴硫化物电极材料及其制备方法 |
CN114653374A (zh) * | 2022-04-02 | 2022-06-24 | 北京师范大学 | 一种双金属氢氧化物及其制备方法和应用 |
CN114653374B (zh) * | 2022-04-02 | 2023-07-18 | 北京师范大学 | 一种双金属氢氧化物及其制备方法和应用 |
CN115295317A (zh) * | 2022-06-28 | 2022-11-04 | 电子科技大学长三角研究院(湖州) | 一种原位生长电极材料的制备方法及其应用 |
CN115295317B (zh) * | 2022-06-28 | 2023-07-07 | 电子科技大学长三角研究院(湖州) | 一种原位生长电极材料的制备方法 |
CN115432744A (zh) * | 2022-08-23 | 2022-12-06 | 合肥国轩高科动力能源有限公司 | 一种中空纳米笼双金属氢氧化物材料的制备方法及应用 |
CN115321603A (zh) * | 2022-09-05 | 2022-11-11 | 盐城工学院 | 一种过渡金属硫化物纳米笼材料的制备方法 |
CN115321603B (zh) * | 2022-09-05 | 2023-06-20 | 盐城工学院 | 一种过渡金属硫化物纳米笼材料的制备方法 |
CN118004978A (zh) * | 2024-04-10 | 2024-05-10 | 洛阳理工学院 | 一种含多重异质界面金属硒化物材料及其制备方法和应用 |
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Application publication date: 20210528 Assignee: Ningbo Haoxiaoze Sports Equipment Co.,Ltd. Assignor: Ningbo University Science Park Development Co.,Ltd. Contract record no.: X2023980033950 Denomination of invention: A hollow Zn Co Ni S nanocage supercapacitor electrode material and its preparation method Granted publication date: 20220722 License type: Exclusive License Record date: 20230325 |