CN112614891A - 具有增强的高频性能的金属氧化物半导体场效应晶体管 - Google Patents
具有增强的高频性能的金属氧化物半导体场效应晶体管 Download PDFInfo
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- CN112614891A CN112614891A CN202011502689.XA CN202011502689A CN112614891A CN 112614891 A CN112614891 A CN 112614891A CN 202011502689 A CN202011502689 A CN 202011502689A CN 112614891 A CN112614891 A CN 112614891A
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- Ceramic Engineering (AREA)
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- Manufacturing & Machinery (AREA)
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract
Description
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310021916.4A CN115863438A (zh) | 2020-03-04 | 2020-12-17 | 具有分离平面栅结构的金属氧化物半导体场效应晶体管 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US16/808,703 | 2020-03-04 | ||
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US20210280680A1 (en) | 2021-09-09 |
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