CN112201594B - 用于增强处理均匀性和减少基板滑动的基座 - Google Patents

用于增强处理均匀性和减少基板滑动的基座 Download PDF

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Publication number
CN112201594B
CN112201594B CN202011019392.8A CN202011019392A CN112201594B CN 112201594 B CN112201594 B CN 112201594B CN 202011019392 A CN202011019392 A CN 202011019392A CN 112201594 B CN112201594 B CN 112201594B
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China
Prior art keywords
substrate
support
substrate support
recess
angled
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CN202011019392.8A
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English (en)
Chinese (zh)
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CN112201594A (zh
Inventor
甘加达尔·希拉瓦特
马哈德夫·乔希
青木裕司
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN202011019392.8A priority Critical patent/CN112201594B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202011019392.8A 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座 Active CN112201594B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011019392.8A CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201361788920P 2013-03-15 2013-03-15
US61/788,920 2013-03-15
US14/197,699 US9799548B2 (en) 2013-03-15 2014-03-05 Susceptors for enhanced process uniformity and reduced substrate slippage
US14/197,699 2014-03-05
CN201480003813.4A CN105009272A (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座
CN202011019392.8A CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座
PCT/US2014/021639 WO2014149957A1 (en) 2013-03-15 2014-03-07 Susceptors for enhanced process uniformity and reduced substrate slippage

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480003813.4A Division CN105009272A (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

Publications (2)

Publication Number Publication Date
CN112201594A CN112201594A (zh) 2021-01-08
CN112201594B true CN112201594B (zh) 2024-09-20

Family

ID=51524050

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011019392.8A Active CN112201594B (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座
CN201480003813.4A Pending CN105009272A (zh) 2013-03-15 2014-03-07 用于增强处理均匀性和减少基板滑动的基座

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Country Status (6)

Country Link
US (1) US9799548B2 (enExample)
JP (1) JP6873696B2 (enExample)
KR (1) KR102335921B1 (enExample)
CN (2) CN112201594B (enExample)
TW (1) TWI631660B (enExample)
WO (1) WO2014149957A1 (enExample)

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CN106463445B (zh) * 2014-05-21 2020-09-04 应用材料公司 热处理基座
GB2534146B (en) * 2015-01-14 2017-06-28 Sky Tech Inc Wafer carrier tray
JP2018026503A (ja) * 2016-08-12 2018-02-15 株式会社Sumco サセプタ、エピタキシャル成長装置、及びエピタキシャルウェーハの製造方法
JP6403106B2 (ja) * 2016-09-05 2018-10-10 信越半導体株式会社 気相成長装置
KR102540125B1 (ko) * 2017-08-30 2023-06-05 주성엔지니어링(주) 기판안치수단 및 기판처리장치
US10755955B2 (en) * 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
CN115704108B (zh) * 2021-08-09 2026-03-13 深圳市鹏芯微集成电路制造有限公司 预热环和基板处理装置
JP7774416B2 (ja) * 2021-10-20 2025-11-21 東京エレクトロン株式会社 基板載置方法および基板載置機構

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JP2004119859A (ja) * 2002-09-27 2004-04-15 Shin Etsu Handotai Co Ltd サセプタ、半導体ウェーハの製造装置及び製造方法
CN101772836A (zh) * 2007-06-19 2010-07-07 Memc电子材料有限公司 用于提高产量和减少晶片损坏的基座

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JP2004119859A (ja) * 2002-09-27 2004-04-15 Shin Etsu Handotai Co Ltd サセプタ、半導体ウェーハの製造装置及び製造方法
CN101772836A (zh) * 2007-06-19 2010-07-07 Memc电子材料有限公司 用于提高产量和减少晶片损坏的基座

Also Published As

Publication number Publication date
WO2014149957A1 (en) 2014-09-25
CN105009272A (zh) 2015-10-28
TWI631660B (zh) 2018-08-01
US20140265091A1 (en) 2014-09-18
KR102335921B1 (ko) 2021-12-03
CN112201594A (zh) 2021-01-08
KR20150130261A (ko) 2015-11-23
US9799548B2 (en) 2017-10-24
JP2016518699A (ja) 2016-06-23
TW201448111A (zh) 2014-12-16
JP6873696B2 (ja) 2021-05-19

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