CN111987173A - 一种可集成的二维光电突触器件阵列及其制备方法 - Google Patents
一种可集成的二维光电突触器件阵列及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种可集成的二维光电突触器件阵列及其制备方法,突触器件阵列,包括若干突触器件单元,突触器件单元包括衬底,衬底上设置有背栅电极,背栅电极上设置有绝缘介质层,绝缘介质层上中部设置有二维材料导电沟道,二维材料导电沟道两侧分别设置有源漏电极一和源漏电极二,二维材料导电沟道与源漏电极一和源漏电极二之间形成欧姆接触,二维材料导电沟道、源漏电极一和源漏电极二上部设置有透明封装层。本发明还提供了突触阵列的制备方法。本发明的器件阵列包含多个基于H钝化的含Si绝缘介质衬底的突触器件单元,其制备工艺简单易操作,有效解决了现有技术中制备工艺复杂、不利于大规模生产和应用等问题,便于推广使用。
Description
技术领域
本发明属于二维光电突触器件技术领域,具体涉及一种可集成的二维光电突触器件阵列及其制备方法。
背景技术
在过去的几十年间,硅基光电子学器件迅速发展,逐渐成为光传感领域至关重要的组成部分,并在图像采集、信息存储以及逻辑数据处理等信息技术领域有着重要的实际应用。但随着半导体制造技术的飞速发展,基于硅块体材料的光电子学器件正在面临10nm以下特征尺寸的物理极限挑战和发展下一代柔性、透明和可穿戴智能电子设备的障碍。
原子级厚度的二维材料(包括石墨烯,过渡金属硫化物、黑磷等),因其优异的机械性能和独特的电子学以及光学特性,被认为是后摩尔时代发展各种柔性透明光电子学器件的最具前景的候选材料。例如,光电探测器,异质结发光二极管和太阳能电池等。此外,基于二维材料对其界表面电荷转移极其敏感的特性,光-电场同时调控电荷与材料沟道之间的转移过程,为发展各种多功能新型光电信息器件提供了机遇。其中,二维光电突触器件由于高带宽和低串扰等特点迅速引起研究者们广泛的兴趣,并展示出在人类视觉感知系统仿生方面广阔的应用前景。然而,现有基于各种范德瓦尔斯异质结的二维光电突触器件面临着制备工艺复杂、难以实现阵列化集成以及大规模生产等技术困难。为进一步推动二维材料光电突触器件的发展和应用,迫切地需要寻求一种具有制备工艺简单,易于集成的新型二维光电突触器件单元。
发明内容
针对现有技术中的上述不足,本发明提供了一种可集成的二维光电突触阵列及其制备方法,该器件阵列包含多个基于H钝化的含Si绝缘介质衬底的可集成的多功能光电突触器件单元,其制备工艺简单易操作,有效解决了现有技术中制备工艺复杂、不利于大规模生产和应用等问题,便于推广使用。
为实现上述目的,本发明解决其技术问题所采用的技术方案是:提供一种可集成的二维光电突触器件阵列,包括若干突触器件单元,突触器件单元包括衬底,衬底上设置有背栅电极,背栅电极上设置有绝缘介质层,绝缘介质层上中部设置有二维材料导电沟道,二维材料导电沟道两侧分别设置有源漏电极一和源漏电极二,二维材料导电沟道与源漏电极一和源漏电极二之间形成欧姆接触,二维材料导电沟道、源漏电极一和源漏电极二上部设置有透明封装层。
进一步,绝缘介质层为二氧化硅或氮化硅,厚度为30-300nm。
进一步,衬底为硬质衬底或柔性衬底。
进一步,衬底材质为硅/二氧化硅、氧化铝、石英玻璃、涤纶树脂或聚酰亚胺。
进一步,背栅电极、源漏电极一和源漏电极二材质为钛、铬、镍、金和钯中的至少一种。
进一步,二维材料导电沟道材质为石墨烯、过渡金属硫化物或黑磷。
进一步,透明封装层材质为氧化铝、二氧化铪或六方氮化硼。
上述可集成的二维光电突触器件阵列的制备方法,依次包括以下步骤:
(1)通过光刻法和蒸镀法在衬底上制得背栅电极;
(2)通过电子束沉积或磁控溅射在衬底上制备介质薄膜,然后在氩气/氢气混合气体气氛中进行退火处理,实现绝缘介质层的H钝化引入Si-H复合缺陷,得绝缘介质层;
(3)通过气相沉积法合成二维材料,然后通过湿法或干法转移至衬底上,再通过光刻法和氧气等离子体处理,获得图形化二维材料导电沟道阵列;
(4)通过光刻法和蒸镀法在二维材料导电沟道两侧制备出源漏电极一和源漏电极二,然后通过原子层沉积在表面沉积出透明封装层,得可集成的二维光电突触器件阵列。
进一步,步骤(2)中,氩气/氢气混合气体中,氩气和氢气的体积流量比为95-99:1-5。
进一步,步骤(2)中,氩气/氢气混合气体中,氩气和氢气的体积流量比为97:3。
综上所述,本发明具有以下优点:
1、本发明的器件阵列包含多个基于H钝化的含Si绝缘介质衬底的可集成的多功能光电突触器件单元,同时还为发展具有图像采集和存储功能的图像传感器提供了一条新思路,其制备工艺简单易操作,有效解决了现有技术中制备工艺复杂、不利于大规模生产和应用等问题,便于推广使用。
2、可集成的二维光电突触器件,利用光照和电场调控SiO2介质层中质子正电荷的产生和迁移,在撤去光照后形成的固定电荷会形成对二维材料导电沟道的静电掺杂,增大器件电导模拟突触的长期增强效应。光照下,施加相反方向的电场迫使质子正电荷返回到初始位置,以此削弱该正电荷对二维材料沟道的静电掺杂作用,降低器件电导模拟突触的长期抑制效应。不同于二维材料范德瓦尔斯异质结光电突触器件,本发明所述二维光电突触器件的突触模拟功能源于二氧化硅介质层中正电荷对导电沟道的间接掺杂过程,这使得发展大规模可集成的光电突触器件阵列成为了可能。
3、在氩气/氢气混合气体气氛下实现绝缘介质层的H钝化,引入Si-H复合缺陷,紫外光照激发介质层中Si-H复合缺陷形成足够多的可移动质子正电荷,并通过外加电场调控质子电荷的迁移实现对二维材料导电沟道的间接电荷掺杂。这种间接掺杂作用并不依赖于二维材料自身的能带结构和光吸收率,并使得二维材料自身的载流子迁移率得以保持,通过选用具有高开关比率的二维材料作为导电沟道,可进一步提升光电突触的多阻态存储能力。同时结合大面积二维材料的生长和转移工艺,该器件结构可极大地简化二维光电突触器件的制备,并为实现可集成的大规模器件阵列提供了一种新颖的解决方案。
附图说明
图1为可集成的二维光电突触器件单元的示意图;
图2为可集成的二维光电突触器件阵列的示意图;
图3为实施例1所得可集成的二维光电突触器件单元的多位存储写入结果;
图4为实施例1所得可集成的二维光电突触器件单元的多位存储擦除结果;
图5为实施例1所得可集成的二维光电突触器件的突触长期增强和长期抑制等可塑性的仿生模拟结果;
其中,1、衬底;2、背栅电极;3、绝缘介质层;4、二维材料导电沟道;5、源漏电极一;6、源漏电极二;7、透明封装层。
具体实施方式
实施例1
一种可集成的二维光电突触器件阵列,包括若干突触器件单元,突触器件单元包括衬底1,衬底1上设置有背栅电极2,背栅电极2上设置有含Si-H键的绝缘介质层3,绝缘介质层3上中部设置有二维材料导电沟道4,二维材料导电沟道4两侧分别设置有源漏电极一5和源漏电极二6,二维材料导电沟道4与源漏电极一5和源漏电极二6之间形成欧姆接触,二维材料导电沟道4、源漏电极一5和源漏电极二6上部设置有透明封装层7。
上述可集成的二维光电突触器件阵列的制备方法,依次包括以下步骤:
(1)在Si/SiO2衬底上制备出金属背栅电极:首先采用光刻工艺在SiO2衬底上光刻定义出背栅金属电极的掩膜图形,然后采用电子束蒸发镀膜设备以 的速率在衬底上分别沉积3nm和50nm厚的Cr和Au薄膜,随后将衬底浸入丙酮溶液30min后经金属剥离工艺(lift-off),得图形化的背栅电极;
(2)绝缘介质层的制备:首先采用磁控溅射设备以3nm/min的生长速率在衬底上生长出90nm厚度的SiO2介质薄膜,随后在Ar/H2通入比例为97sccm:3sccm的管式炉中300℃退火1小时,实现SiO2介质层的H钝化引入Si-H复合缺陷,得绝缘介质层;
(3)CVD石墨烯的湿法转移和图形化:首先在CVD合成的大面积连续Cu基石墨烯薄膜上旋涂PMMA苯甲醚溶液,烘干后置于浓度为1mol/L的过硫酸铵溶液中进行刻蚀,待Cu刻蚀干净后将石墨烯转移至目标衬底;然后用丙酮溶液将PMMA清洗干净,随后采用光刻工艺制备出阵列化的石墨烯沟道掩膜图形,并利用氧等离子体去胶机(功率400W,O2流量2300L/min)将未受掩膜保护的部位刻蚀去除;最后将样品浸入丙酮溶液去除掉光刻胶,得图形化的石墨烯导电沟道阵列;
(4)源漏电极的制备:基于步骤(3)制备出的含有石墨烯阵列的衬底,通过光刻工艺制备出金属电极图形,并利用电子束蒸镀设备以的蒸镀速率分别沉积出10nm和100nm厚的Cr和Au薄膜,随后放入丙酮溶液进行lift-off制得金属源漏电极一和源漏电极二;然后利用原子层沉积设备以Al(CH3)3(TMA)和H2O作为前驱体在沟道上方沉积一层30nm厚的Al2O3保护层,最后采用键合机将源漏电极和背栅电极与外电路相连,得可集成的二维光电突触器件阵列。
实施例2
一种可集成的二维光电突触器件阵列,包括若干突触器件单元,突触器件单元包括衬底1,衬底1上设置有背栅电极2,背栅电极2上设置有含Si-H键的绝缘介质层3,绝缘介质层3上中部设置有二维材料导电沟道4,二维材料导电沟道4两侧分别设置有源漏电极一5和源漏电极二6,二维材料导电沟道4与源漏电极一5和源漏电极二6之间形成欧姆接触,二维材料导电沟道4、源漏电极一5和源漏电极二6上部设置有透明封装层7。
上述可集成的二维光电突触器件阵列的制备方法,依次包括以下步骤:
(1)在Al2O3衬底上制备出金属背栅电极:首先将带有背栅电极图形的硬质掩膜版(shadow mask)置于Al2O3衬底上,然后采用电子束蒸发镀膜设备以的速率在衬底上分别沉积10nm和100nm厚的Ti和Au薄膜,得图形化的背栅电极;
(2)绝缘介质层的制备:首先采用射频溅射设备以10nm/min的速率在衬底上制得90nm厚度的SiO2介质层薄膜,随后在含有Ar/H2通入比例为97sccm:3sccm的管式炉中300℃退火1小时,实现SiO2介质层的H钝化引入Si-H复合缺陷,得绝缘介质层;
(3)CVD MoS2的湿法转移和图形化:首先在SiO2衬底CVD合成的MoS2连续薄膜上旋涂PMMA苯甲醚溶液,烘干后用刀片划过硅片一角并置于KOH碱性溶液中,待MoS2/PMMA薄膜悬浮于溶液表面后将MoS2转移至目标衬底;然后用丙酮溶液将PMMA清洗干净,再采用光刻工艺制备出阵列化的MoS2导电沟道掩膜图形,随后利用氧等离子体去胶机(功率400W,O2流量2300L/min)将未受掩膜保护的部位刻蚀去除;最后将样品浸入丙酮溶液去除掉光刻胶,得图形化的MoS2导电沟道阵列;
(4)源漏电极的制备:基于步骤(3)制备出的含有MoS2阵列的衬底,通过光刻工艺制备出金属电极掩膜图形,并利用电子束蒸镀设备以的蒸镀速率分别沉积出10nm和100nm厚的Ti和Au薄膜,随后放入丙酮溶液进行lift-off,得金属源漏电极一和源漏电极二;在CVD合成的大面积连续Cu基h-BN薄膜上旋涂一层PMMA,待烘干后置于浓度为1mol/L的FeCl3溶液中,待Cu刻蚀干净后将h-BN转移至目标衬底;利用丙酮溶液将PMMA清洗干净,实现h-BN对器件的封装保护;最后采用键合机将源漏电极和背栅电极与外电路相连,得可集成的二维光电突触器件阵列。
实施例3
一种可集成的二维光电突触器件阵列,包括若干突触器件单元,突触器件单元包括衬底1,衬底1上设置有背栅电极2,背栅电极2上设置有含Si-H键的绝缘介质层3,绝缘介质层3上中部设置有二维材料导电沟道4,二维材料导电沟道4两侧分别设置有源漏电极一5和源漏电极二6,二维材料导电沟道4与源漏电极一5和源漏电极二6之间形成欧姆接触,二维材料导电沟道4、源漏电极一5和源漏电极二6上部设置有透明封装层7。
上述可集成的二维光电突触器件阵列的制备方法,依次包括以下步骤:
(1)在涤纶树脂PET柔性衬底上制备出金属背栅:首先将带有背栅电极图形的硬质掩膜版(shadow mask)置于涤纶树脂PET柔性衬底,采用热蒸发镀膜设备以的速率在衬底上直接沉积50nm厚的Au薄膜,得图形化的背栅电极;
(2)绝缘介质层的制备:采用电子束蒸镀以的蒸镀速率目标衬底上沉积90nm厚的Si3N4介质层,随后将样品置于Ar/H2比例为97sccm:3sccm的气氛中加热至180℃进行低温退火,实现Si3N4介质层的H钝化引入Si-H复合缺陷,得绝缘介质层;
(3)MoS2薄膜的干法转移:首先制备出质量分数为10%的PVA水溶液并制得PVA膜,随后将其放置在粘附于透明玻璃片一端的PDMS衬底上获得PVA干法转移膜;然后在显微镜和三维位移平台的辅助下,利用PVA转移膜将机械剥离于SiO2衬底上的MoS2单层或者少层薄膜缓慢粘起;待涤纶树脂PET目标衬底加热至55℃后,将PVA膜上的样品对准目标位置缓慢均匀压下,2min后提起玻璃片,实现MoS2薄膜到目标衬底的定位转移,得图形化的MoS2导电沟道阵列;
(4)源漏电极的制备:首先通过光刻工艺在步骤(3)获得的衬底上制备出电极掩膜图形,然后采用电子束蒸镀设备以的蒸镀速率分别沉积出10nm和100nm厚度的Cr和Au薄膜,并利用原子层沉积设备以Al(CH3)3(TMA)和H2O作为前驱体在沟道上方沉积一层30nm厚的Al2O3封装保护层,最后利用键合器将源漏电极和背栅电极与外电路相连,得可集成的二维光电突触器件阵列。
通过同时施加栅极电压和紫外光脉冲信号,对实施例1所得可集成的二维光电突触器件单元进行测试,其多位存储写入结果和多位存储逐渐擦除结果分别如图3和图4所示。
由图3-4可知,调控绝缘介质层中的质子正电荷分布,并利用这些正电荷对二维材料导电沟道的静电掺杂作用,成功地实现了对光电激励信号的写入和擦除。这种源于SiO2介质层作用产生的光电信息存储特性,使得二维光电突触器件的阵列集成和应用成为可能。此外,进一步提取图3和图4中实验测试结果,栅极和光信号类比为突触前膜激励,源漏电流为突触后膜信号,由此可进一步用作突触长期增强和长期抑制等可塑性的仿生模拟,如图5所示。
虽然结合附图对本发明的具体实施方式进行了详细地描述,但不应理解为对本专利的保护范围的限定。在权利要求书所描述的范围内,本领域技术人员不经创造性劳动即可作出的各种修改和变形仍属本专利的保护范围。
Claims (10)
1.一种可集成的二维光电突触器件阵列,其特征在于,包括若干突触器件单元,所述突触器件单元包括衬底,所述衬底上设置有背栅电极,所述背栅电极上设置有含Si-H键的绝缘介质层,所述绝缘介质层上中部设置有二维材料导电沟道,所述二维材料导电沟道两侧分别设置有源漏电极一和源漏电极二,所述二维材料导电沟道与源漏电极一和源漏电极二之间形成欧姆接触,所述二维材料导电沟道、源漏电极一和源漏电极二上部设置有透明封装层。
2.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述绝缘介质层为二氧化硅或氮化硅,厚度为30-300nm。
3.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述二维材料导电沟道材质为石墨烯、过渡金属硫化物或黑磷。
4.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述衬底为硬质衬底或柔性衬底。
5.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述衬底材质为硅/二氧化硅、氧化铝、石英玻璃、涤纶树脂或聚酰亚胺。
6.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述背栅电极、源漏电极一和源漏电极二材质为钛、铬、镍、金和钯中的至少一种。
7.如权利要求1所述的可集成的二维光电突触器件阵列,其特征在于,所述透明封装层材质为氧化铝、二氧化铪或六方氮化硼。
8.权利要求1-7任一项所述的可集成的二维光电突触器件阵列的制备方法,其特征在于,依次包括以下步骤:
(1)通过光刻法和蒸镀法在衬底上制得背栅电极;
(2)通过电子束沉积或磁控溅射在衬底上制备介质薄膜,然后在氩气/氢气混合气体气氛中进行退火处理,实现绝缘介质层的H钝化引入Si-H复合缺陷,得绝缘介质层;
(3)通过气相沉积法合成二维材料,然后通过湿法或干法转移至衬底上,再通过光刻法和氧气等离子体处理,获得图形化二维材料导电沟道阵列;
(4)通过光刻法和蒸镀法在二维材料导电沟道两侧制备出源漏电极一和源漏电极二,然后通过原子层沉积在表面沉积出透明封装层,得可集成的二维光电突触器件阵列。
9.如权利要求8所述的可集成的二维光电突触器件阵列的制备方法,其特征在于,步骤(2)中,所述氩气/氢气混合气体中,氩气和氢气的体积流量比为95-99:1-5。
10.如权利要求9所述的可集成的二维光电突触器件阵列的制备方法,其特征在于,步骤(2)中,所述氩气/氢气混合气体中,氩气和氢气的体积流量比为97:3。
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