CN1119734C - 基准电路及其方法 - Google Patents
基准电路及其方法 Download PDFInfo
- Publication number
- CN1119734C CN1119734C CN98118379A CN98118379A CN1119734C CN 1119734 C CN1119734 C CN 1119734C CN 98118379 A CN98118379 A CN 98118379A CN 98118379 A CN98118379 A CN 98118379A CN 1119734 C CN1119734 C CN 1119734C
- Authority
- CN
- China
- Prior art keywords
- voltage
- transistor
- resistance
- bipolar transistor
- electric current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims 1
- 238000012421 spiking Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- WABPQHHGFIMREM-VENIDDJXSA-N lead-201 Chemical compound [201Pb] WABPQHHGFIMREM-VENIDDJXSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US911239 | 1997-08-15 | ||
| US911,239 | 1997-08-15 | ||
| US08/911,239 US5910726A (en) | 1997-08-15 | 1997-08-15 | Reference circuit and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1208873A CN1208873A (zh) | 1999-02-24 |
| CN1119734C true CN1119734C (zh) | 2003-08-27 |
Family
ID=25429959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98118379A Expired - Fee Related CN1119734C (zh) | 1997-08-15 | 1998-08-14 | 基准电路及其方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5910726A (enExample) |
| EP (1) | EP0898215B1 (enExample) |
| JP (1) | JP4388144B2 (enExample) |
| KR (1) | KR100682818B1 (enExample) |
| CN (1) | CN1119734C (enExample) |
| DE (1) | DE69831372T2 (enExample) |
| TW (1) | TW398069B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121824A (en) * | 1998-12-30 | 2000-09-19 | Ion E. Opris | Series resistance compensation in translinear circuits |
| US6133719A (en) * | 1999-10-14 | 2000-10-17 | Cirrus Logic, Inc. | Robust start-up circuit for CMOS bandgap reference |
| US6255807B1 (en) * | 2000-10-18 | 2001-07-03 | Texas Instruments Tucson Corporation | Bandgap reference curvature compensation circuit |
| US7524108B2 (en) | 2003-05-20 | 2009-04-28 | Toshiba American Electronic Components, Inc. | Thermal sensing circuits using bandgap voltage reference generators without trimming circuitry |
| US7253597B2 (en) * | 2004-03-04 | 2007-08-07 | Analog Devices, Inc. | Curvature corrected bandgap reference circuit and method |
| JP4808069B2 (ja) | 2006-05-01 | 2011-11-02 | 富士通セミコンダクター株式会社 | 基準電圧発生回路 |
| JP2009003835A (ja) * | 2007-06-25 | 2009-01-08 | Oki Electric Ind Co Ltd | 基準電流発生装置 |
| JP4990049B2 (ja) * | 2007-07-02 | 2012-08-01 | 株式会社リコー | 温度検出回路 |
| US8232784B2 (en) | 2008-04-01 | 2012-07-31 | O2Micro, Inc | Circuits and methods for current sensing |
| CN104253587B (zh) * | 2013-06-27 | 2017-10-20 | 上海东软载波微电子有限公司 | 晶体振荡器 |
| JP6765119B2 (ja) * | 2017-02-09 | 2020-10-07 | リコー電子デバイス株式会社 | 基準電圧発生回路及び方法 |
| EP4084071A4 (en) * | 2019-12-26 | 2023-06-21 | Osaka University | RESISTANCE DEVICE, INTEGRATED SWITCHING DEVICE, IMPLANTABLE DEVICE AND METHOD FOR DETERMINING THE CORRECTION COEFFICIENT |
| US12313660B2 (en) * | 2023-03-27 | 2025-05-27 | Texas Instruments Incorporated | Methods and apparatus to improve accuracy of current sense circuitry |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4375595A (en) * | 1981-02-03 | 1983-03-01 | Motorola, Inc. | Switched capacitor temperature independent bandgap reference |
| JPS60247719A (ja) * | 1984-05-23 | 1985-12-07 | Nec Corp | バンドギヤツプ基準電圧発生器 |
| JPH0690655B2 (ja) * | 1987-12-18 | 1994-11-14 | 株式会社東芝 | 中間電位発生回路 |
| IT1234838B (it) * | 1989-02-21 | 1992-05-29 | Saverio Voltattorni | Dispositivo per evitare lo sganciamento e la sovrasterzatura degli autoarticolati |
| US5132556A (en) * | 1989-11-17 | 1992-07-21 | Samsung Semiconductor, Inc. | Bandgap voltage reference using bipolar parasitic transistors and mosfet's in the current source |
| IT1246598B (it) * | 1991-04-12 | 1994-11-24 | Sgs Thomson Microelectronics | Circuito di riferimento di tensione a band-gap campionato |
| US5336986A (en) * | 1992-02-07 | 1994-08-09 | Crosspoint Solutions, Inc. | Voltage regulator for field programmable gate arrays |
| JPH0643956A (ja) * | 1992-07-06 | 1994-02-18 | Nec Corp | 基準電圧発生回路 |
| US5352973A (en) * | 1993-01-13 | 1994-10-04 | Analog Devices, Inc. | Temperature compensation bandgap voltage reference and method |
| US5424628A (en) * | 1993-04-30 | 1995-06-13 | Texas Instruments Incorporated | Bandgap reference with compensation via current squaring |
| KR100361715B1 (ko) * | 1993-08-30 | 2003-02-07 | 모토로라 인코포레이티드 | 전압기준회로용보정회로 |
-
1997
- 1997-08-15 US US08/911,239 patent/US5910726A/en not_active Expired - Fee Related
-
1998
- 1998-06-25 DE DE69831372T patent/DE69831372T2/de not_active Expired - Fee Related
- 1998-06-25 EP EP98111716A patent/EP0898215B1/en not_active Expired - Lifetime
- 1998-07-08 TW TW087111041A patent/TW398069B/zh not_active IP Right Cessation
- 1998-08-12 JP JP24107198A patent/JP4388144B2/ja not_active Expired - Fee Related
- 1998-08-14 CN CN98118379A patent/CN1119734C/zh not_active Expired - Fee Related
- 1998-08-14 KR KR1019980032971A patent/KR100682818B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4388144B2 (ja) | 2009-12-24 |
| JPH11134048A (ja) | 1999-05-21 |
| KR100682818B1 (ko) | 2007-07-09 |
| DE69831372D1 (de) | 2005-10-06 |
| CN1208873A (zh) | 1999-02-24 |
| TW398069B (en) | 2000-07-11 |
| EP0898215B1 (en) | 2005-08-31 |
| HK1018517A1 (en) | 1999-12-24 |
| US5910726A (en) | 1999-06-08 |
| DE69831372T2 (de) | 2006-03-09 |
| EP0898215A3 (en) | 1999-05-12 |
| EP0898215A2 (en) | 1999-02-24 |
| KR19990023592A (ko) | 1999-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040820 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20040820 Address after: Texas in the United States Patentee after: FreeScale Semiconductor Address before: Illinois Instrunment Patentee before: Motorola, Inc. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030827 Termination date: 20130814 |