CN111834330A - 一种新型半导体封装结构及其制造工艺 - Google Patents

一种新型半导体封装结构及其制造工艺 Download PDF

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CN111834330A
CN111834330A CN202010614304.2A CN202010614304A CN111834330A CN 111834330 A CN111834330 A CN 111834330A CN 202010614304 A CN202010614304 A CN 202010614304A CN 111834330 A CN111834330 A CN 111834330A
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刘恺
王亚琴
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Abstract

本发明涉及一种新型半导体封装结构及其制造工艺，所述封装结构包括线路内芯(1)，所述线路内芯(1)包括上金属板(1.1)和下金属板(1.2)，所述上金属板(1.1)和下金属板(1.2)之间填充有塑料(2)，所述上金属板(1.1)正面设置有基岛(3)和内引脚(4)，所述下金属板(1.2)背面设置有外引脚(5)，所述基岛(3)上设置有芯片(7)，所述芯片(7)和焊线(8)外围包封有塑封料(9)。本发明直接在线路内芯中填充塑封料，不需使用玻璃纤维层，不需要开孔后再在孔中植入导电物质，简化了制造工艺，减少了制作成本，同时通过其结构比较稳定，在温度发生变化时不容易发生翘曲。

Description

一种新型半导体封装结构及其制造工艺
技术领域
本发明涉及一种新型半导体封装结构及其制造工艺，属于半导体封装技术领域。
背景技术
传统的基板封装结构的制造工艺流程如下所示：
步骤一、参见图13，取一玻璃纤维材料制成的基板；
步骤二、参见图14，在玻璃纤维基板上所需的位置上开孔；
步骤三、参见图15，在玻璃纤维基板的背面披覆一层铜箔；
步骤四、参见图16，在玻璃纤维基板打孔的位置填入导电物质；
步骤五、参见图17，在玻璃纤维基板的正面披覆一层铜箔；
步骤六、参见图18，在玻璃纤维基板表面披覆光阻膜；
步骤七、参见图19，将光阻膜在需要的位置进行曝光显影开窗；
步骤八、参见图20，将完成开窗的部分进行蚀刻；
步骤九、参见图21，将基板表面的光阻膜剥除；
步骤十、参见图22，在铜箔线路层的表面进行防焊漆(俗称绿漆)的披覆；
步骤十一、参见图23，在防焊漆需要进行后工序的装片以及打线键合的区域进行开窗；
步骤十二、参见图24，在步骤十一进行开窗的区域进行电镀，相对形成基岛和引脚；
步骤十三、完成后续的装片、打线、包封、切割等相关工序。
上述传统基板封装结构存在以下不足和缺陷：
1、传统的基板制造需在玻璃纤维基板上开孔，再在孔中植入导电物质，并在玻璃纤维基板上披覆铜箔，其制造工艺非常复杂，成本较高；
2、传统的基板有一层的玻璃纤维材料，同样的也多了一层玻璃纤维的成本；玻璃纤维本身就是一种发泡物质，所以容易因为放置的时间与环境吸入水分以及湿气，直接影响到可靠性的安全能力或是可靠性的等级；
3、传统的基板仅在需要进行电性连接的地方设置上下导通金属柱，所以金属柱并没有均匀分布，这就会导致基板在温度发生变化时容易发生翘曲。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种新型半导体封装结构及其制造工艺，其直接在线路内芯中填充塑料，不需使用玻璃纤维层，不需要开孔后再在孔中植入导电物质，简化了制造工艺，减少了制作成本，同时通过其结构比较稳定，在温度发生变化时不容易发生翘曲。
本发明解决上述问题所采用的技术方案为：一种新型半导体封装结构，它包括线路内芯，所述线路内芯包括上金属板和下金属板，所述上金属板和下金属板之间通过复数个金属柱相连接，所述上金属板和下金属板之间填充有塑料，所述金属柱被包覆于塑料内，所述上金属板正面设置有基岛和内引脚，所述下金属板背面设置有外引脚，所述基岛上设置有芯片，所述芯片外围包封有塑封料，所述金属柱有两种形式，分别为连接金属柱和虚拟金属柱，所述连接金属柱起电性连接和机械支撑作用，所述虚拟金属柱仅起机械支撑作用。
可选的，复数个金属柱呈阵列式排布。
可选的，所述上金属板和下金属板外围包覆有绿漆。
可选的，所述上金属板外围包覆的绿漆上表面与基岛和内引脚上表面齐平；所述下金属板外围包覆的绿漆下表面与外引脚下表面齐平。
可选的，基岛区域的连接金属柱与连接金属柱顶部之间和底部之间分别通过上层金属板和下层金属板相连，引脚区域的连接金属柱与连接金属柱顶部之间和底部之间分别通过上层金属板和下层金属板相连。
可选的，基岛区域的连接金属柱与虚拟金属柱仅通过顶部的上层金属板或底部的下层金属板相连；引脚区域的连接金属柱和虚拟金属柱仅通过顶部的上层金属板或底部的下层金属板相连。
可选的，基岛区域的虚拟金属柱与虚拟金属柱仅通过顶部的上层金属板或底部的下层金属板相连；引脚区域的虚拟金属柱与虚拟金属柱仅通过顶部的上层金属板或底部的下层金属板相连。
可选的，基岛区域的连接金属柱与连接金属柱底部之间不通过下层金属板相连。
一种新型半导体封装结构的制造工艺，所述工艺包括以下步骤：
步骤一、取一线路内芯，线路内芯包括上金属板和下金属板，上金属板和下金属板之间通过复数个金属柱相连接；
步骤二、在线路内芯的上金属板和下金属板之间填充塑料；
步骤三、对上金属板和下金属板表面部分区域进行化学蚀刻，直至露出塑料和部分金属柱；
步骤四，在步骤三完成蚀刻后的上金属板和下金属板外围涂覆绿漆；
步骤五，对上金属板和下金属板表面的绿漆进行曝光、显影从而去除部分绿漆，以露出上金属板和下金属板后续需要进行电镀作业的图形区域；
步骤六，通过电镀在上金属板正面形成相应的基岛和内引脚，在下金属板背面形成外引脚；
步骤七，在步骤六形成的基岛上植入芯片；
步骤八，芯片外围采用塑封料进行塑封；
步骤九，切割制得单颗新型半导体封装结构。
可选的，步骤一中上金属板和下金属板为平整的金属板；金属柱有两种形式，分别为连接金属柱和虚拟金属柱，所述连接金属柱起电性连接和机械支撑作用，所述虚拟金属柱在后续形成的封装结构中仅起机械支撑作用。
与现有技术相比，本发明的优点在于：
1、本发明直接在线路内芯中填充塑料，不需使用玻璃纤维层，不需要开孔再在孔中植入导电物质，简化了制造工艺，减少了制作成本，提高了封装体的安全性和可靠性，减少了玻璃纤维材料带来的环境污染；
2、本发明的封装结构中平均分布有金属柱，部分用于连接基岛与外引脚或内引脚与外引脚，部分为虚拟金属柱，其未用于电性连接但仍起到支撑作用，所以其结构比较稳定，在温度发生变化时不容易发生翘曲。
附图说明
图1为本发明一种新型半导体封装结构实施例1的剖面示意图。
图2为本发明一种新型半导体封装结构实施例2的剖面示意图。
图3～图12为本发明一种新型半导体封装结构制造工艺的流程示意图。
图13～图24为传统的基板封装结构制造工艺的流程示意图。
其中：
线路内芯 1
上金属板 1.1
下金属板 1.2
金属柱 1.3
连接金属柱 1.3a
虚拟金属柱 1.3b
塑料 2
基岛 3
内引脚 4
外引脚 5
粘结物质或焊料 6
芯片 7
焊线 8
塑封料 9
绿漆 10。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1：
如图1所示，本发明涉及的一种新型半导体封装结构，它包括线路内芯1，所述线路内芯1包括上金属板1.1和下金属板1.2，所述上金属板1.1和下金属板1.2之间通过复数个阵列式排布的金属柱1.3电性和机械连接，所述上金属板1.1和下金属板1.2之间填充有塑料2，所述金属柱1.3被包覆于塑料2内，所述上金属板1.1正面设置有基岛3和内引脚4，所述下金属板1.2背面设置有外引脚5，所述基岛3上通过粘结物质或焊料6设置有芯片7，所述芯片7通过焊线8与内引脚4电性连接，所述芯片7和焊线8外围包封有塑封料9；
所述上金属板1.1和下金属板1.2外围包覆有绿漆10；
所述上金属板1.1外围包覆的绿漆10上表面与基岛3和内引脚4上表面齐平；
所述下金属板1.2外围包覆的绿漆10下表面与外引脚5下表面齐平；
所述金属柱1.3有两种形式，分别为连接金属柱1.3a和虚拟金属柱1.3b，所述连接金属柱1.3a用于连接基岛3与外引脚5或内引脚4与外引脚5，起电性连接和机械支撑作用，所述虚拟金属柱1.3b仅起机械支撑作用；
所述塑料2为热固性塑料，可以是酚醛塑料、环氧塑料、氨基塑料、不饱和聚酯、醇酸塑料等；
基岛3区域的连接金属柱1.3a与连接金属柱1.3a顶部之间和底部之间分别通过上层金属板1.1和下层金属板1.2相连；
引脚区域(包括内引脚区域和外引脚区域)的连接金属柱1.3a与连接金属柱1.3a顶部之间和底部之间分别通过上层金属板1.1和下层金属板1.2相连；
基岛3区域的连接金属柱1.3a与虚拟金属柱1.3b顶部之间通过上层金属板1.1相连或底部之间通过下层金属板1.2相连；
引脚区域(包括内引脚区域和外引脚区域)的连接金属柱1.3a与虚拟金属柱1.3b顶部之间通过上层金属板1.1相连或底部之间通过下层金属板1.2相连；
基岛3区域的虚拟金属柱1.3b与虚拟金属柱1.3b顶部之间通过上层金属板1.1相连或底部之间通过下层金属板1.2相连；
引脚区域(包括内引脚区域和外引脚区域)的虚拟金属柱1.3b与虚拟金属柱1.3b顶部之间通过上层金属板1.1相连或底部之间通过下层金属板1.2相连。
实施例2：
如图2所示，实施例2与实施例1的区别在于：基岛3区域的连接金属柱1.3a与连接金属柱1.3a底部之间不通过下层金属板1.2相连；引脚区域(包括内引脚区域和外引脚区域)的连接金属柱1.3a与连接金属柱1.3a底部之间不通过下层金属板1.2相连。
其制造工艺如下：
步骤一、参见图3，取一线路内芯，所述线路内芯包括上金属板和下金属板，所述上金属板和下金属板为平整的金属板，所述上金属板和下金属板之间通过复数个金属柱电性和机械连接；图4为上金属板与金属柱未结合时的示意图，复数个金属柱呈阵列排布于上金属板和下金属板之间，金属柱有两种形式，分别为连接金属柱和虚拟金属柱，所述连接金属柱起电性连接和机械支撑作用，所述虚拟金属柱在后续形成的封装结构中仅起机械支撑作用；
步骤二、参见图5，在线路内芯外围通过一次性注射成型包覆塑料，所述上金属板的下表面、下金属板的上表面和金属柱包覆在塑料中，所述上金属板的上表面和下金属板的下表面暴露在塑料之外，所述塑料为热固性塑料，可以是酚醛塑料、环氧塑料、氨基塑料、不饱和聚酯、醇酸塑料等；
步骤三、参见图6，在上金属板正面及下金属板背面贴覆或印刷可进行曝光显影的光阻材料，以保护后续蚀刻金属层工艺作业；光阻材料可以是光阻膜，也可以是光刻胶。利用曝光显影设备对金属板表面的光阻材料进行曝光、显影从而去除部分光阻材料，以露出金属板需要进行蚀刻的图形区域。对金属板上完成曝光显影的区域进行化学蚀刻，化学蚀刻直至露出塑料和虚拟金属柱。蚀刻药水可以采用氯化铜或者是氯化铁或者其它可以进行化学蚀刻的药水。去除金属板表面的光阻膜，去除光阻膜的方法可以采用化学药水软化并采用高压水冲洗的方法去除光阻膜，在完成蚀刻以后，连接金属柱起到电性连接内引脚与外引脚的作用和机械支撑作用，虚拟金属柱不起电性连接作用，仅起到机械支撑作用；
步骤四，参见图7，在步骤三完成蚀刻的上金属板和下金属板外围涂覆绿漆，绿漆完全包覆上金属板、下金属板以及步骤三蚀刻暴露出的塑料和虚拟金属柱；
步骤五，参见图8，利用曝光显影设备对金属板表面的绿漆进行曝光、显影从而去除部分绿漆，以露出金属板需要进行电镀作业的图形区域；
步骤六，参见图9，在完成步骤五的金属板正反面开窗区域电镀表面金属层，表面金属层电镀完成后即在上金属板正面形成相应的基岛和内引脚，在下金属板背面形成外引脚；
步骤七，参见图10，在步骤六形成的基岛表面涂覆粘结物质或焊料，然后在粘结物质或焊料上植入芯片。在芯片正面与内引脚正面之间进行键合金属线作业，所述金属线的材料采用金、银、铜、铝或是合金的材料，金属丝的形状可以是丝状也可以是带状；
步骤八，参见图11，将步骤七完成打线作业的芯片外围采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、喷涂方式或是用贴膜方式，所述可以采用有填料物质或是无填料物质的环氧树脂；
步骤九，参见图12，将步骤八完成塑封的半成品进行切割作业，使原本阵列式塑封体切割独立开来，制得新型半导体封装结构。
上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。

Claims (10)

1.一种新型半导体封装结构，其特征在于：它包括线路内芯(1)，所述线路内芯(1)包括上金属板(1.1)和下金属板(1.2)，所述上金属板(1.1)和下金属板(1.2)之间通过复数个金属柱(1.3)相连接，所述上金属板(1.1)和下金属板(1.2)之间填充有塑料(2)，所述金属柱(1.3)被包覆于塑料(2)内，所述上金属板(1.1)正面设置有基岛(3)和内引脚(4)，所述下金属板(1.2)背面设置有外引脚(5)，所述基岛(3)上设置有芯片(7)，所述芯片(7)外围包封有塑封料(9)，所述金属柱(1.3)有两种形式，分别为连接金属柱(1.3a)和虚拟金属柱(1.3b)，所述连接金属柱(1.3a)起电性连接和机械支撑作用，所述虚拟金属柱(1.3b)仅起机械支撑作用。
2.根据权利要求1所述的一种新型半导体封装结构，其特征在于：复数个金属柱(1.3)呈阵列式排布。
3.根据权利要求1所述的一种新型半导体封装结构，其特征在于：所述上金属板(1.1)和下金属板(1.2)外围包覆有绿漆(10)。
4.根据权利要求3所述的一种新型半导体封装结构，其特征在于：所述上金属板(1.1)外围包覆的绿漆(10)上表面与基岛(3)和内引脚(4)上表面齐平；所述下金属板(1.2)外围包覆的绿漆(10)下表面与外引脚(5)下表面齐平。
5.根据权利要求1所述的一种新型半导体封装结构，其特征在于：基岛(3)区域的连接金属柱(1.3a)与连接金属柱(1.3a)顶部之间和底部之间分别通过上层金属板(1.1)和下层金属板(1.2)相连，引脚区域的连接金属柱(1.3a)与连接金属柱(1.3a)顶部之间和底部之间分别通过上层金属板(1.1)和下层金属板(1.2)相连。
6.根据权利要求1所述的一种新型半导体封装结构，其特征在于：基岛(3)区域的连接金属柱(1.3a)与虚拟金属柱(1.3b)仅顶部之间或底部之间相连；引脚区域的连接金属柱(1.3a)和虚拟金属柱(1.3b)仅顶部之间或底部之间相连。
7.根据权利要求1所述的一种新型半导体封装结构，其特征在于：基岛(3)区域的虚拟金属柱(1.3b)与虚拟金属柱(1.3b)仅顶部之间或底部之间相连；引脚区域的虚拟金属柱(1.3b)与虚拟金属柱(1.3b)顶部之间或底部之间相连。
8.根据权利要求1所述的一种新型半导体封装结构，其特征在于：基岛(3)区域的连接金属柱(1.3a)与连接金属柱(1.3a)底部之间不通过下层金属板(1.2)相连。
9.一种新型半导体封装结构的制造工艺，其特征在于所述工艺包括以下步骤：
步骤一、取一线路内芯，线路内芯包括上金属板和下金属板，上金属板和下金属板之间通过复数个金属柱相连接；
步骤二、在线路内芯的上金属板和下金属板之间填充塑料；
步骤三、对上金属板和下金属板表面部分区域进行化学蚀刻，直至露出塑料和部分金属柱；
步骤四，在步骤三完成蚀刻后的上金属板和下金属板外围涂覆绿漆；
步骤五，对上金属板和下金属板表面的绿漆进行曝光、显影从而去除部分绿漆，以露出上金属板和下金属板后续需要进行电镀作业的图形区域；
步骤六，通过电镀在上金属板正面形成相应的基岛和内引脚，在下金属板背面形成外引脚；
步骤七，在步骤六形成的基岛上植入芯片；
步骤八，芯片外围采用塑封料进行塑封；
步骤九，切割制得单颗新型半导体封装结构。
10.根据权利要求9所述的一种新型半导体封装结构的制造工艺，其特征在于：步骤一中上金属板和下金属板为平整的金属板；金属柱有两种形式，分别为连接金属柱和虚拟金属柱，所述连接金属柱起电性连接和机械支撑作用，所述虚拟金属柱在后续形成的封装结构中仅起机械支撑作用。
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CN113169143A (zh) * 2021-02-26 2021-07-23 长江存储科技有限责任公司 半导体封装结构及其封装方法
WO2022178806A1 (en) * 2021-02-26 2022-09-01 Yangtze Memory Technologies Co., Ltd. Semiconductor package structure and packaging method thereof
US11721686B2 (en) 2021-02-26 2023-08-08 Yangtze Memory Technologies Co., Ltd. Semiconductor package structure and packaging method thereof

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