CN111816559B - 用于tsv/mems/功率器件蚀刻的化学物质 - Google Patents

用于tsv/mems/功率器件蚀刻的化学物质 Download PDF

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Publication number
CN111816559B
CN111816559B CN202010698443.8A CN202010698443A CN111816559B CN 111816559 B CN111816559 B CN 111816559B CN 202010698443 A CN202010698443 A CN 202010698443A CN 111816559 B CN111816559 B CN 111816559B
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etching
silicon
fluid
hydrogen
polymer deposition
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Chinese (zh)
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CN111816559A (zh
Inventor
沈鹏
克里斯汀·杜斯拉特
柯蒂斯·安德森
拉胡尔·古普塔
文森特·M·欧马杰
南森·斯塔福德
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN202010698443.8A 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质 Active CN111816559B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010698443.8A CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
CN202010698443.8A CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching
CN201580031726.4A CN106663624B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

Related Parent Applications (1)

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CN111816559A CN111816559A (zh) 2020-10-23
CN111816559B true CN111816559B (zh) 2024-06-11

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CN201580031726.4A Active CN106663624B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

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US (3) US9892932B2 (https=)
EP (1) EP3158579A4 (https=)
JP (1) JP6485972B2 (https=)
KR (3) KR102444697B1 (https=)
CN (2) CN111816559B (https=)
SG (1) SG11201610342YA (https=)
TW (3) TWI695423B (https=)
WO (1) WO2015194178A1 (https=)

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WO2022074708A1 (ja) * 2020-10-05 2022-04-14 Ｓｐｐテクノロジーズ株式会社 プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置
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JP7775835B2 (ja) * 2020-10-15 2025-11-26 株式会社レゾナック エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法
KR102924118B1 (ko) * 2020-10-15 2026-02-09 가부시끼가이샤 레조낙 플루오로부텐의 보관 방법
KR20230161474A (ko) * 2021-03-30 2023-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
KR102942257B1 (ko) 2021-05-07 2026-03-20 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
JP7700221B2 (ja) * 2021-05-07 2025-06-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
TW202548079A (zh) * 2024-03-01 2025-12-16 日商大金工業股份有限公司 沉積氣體
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TWI658509B (zh) 2019-05-01
KR20220124825A (ko) 2022-09-14
KR102539241B1 (ko) 2023-06-01
US9892932B2 (en) 2018-02-13
TW201929071A (zh) 2019-07-16
US10720335B2 (en) 2020-07-21
EP3158579A4 (en) 2018-02-21
SG11201610342YA (en) 2017-01-27
TW202030312A (zh) 2020-08-16
KR102444697B1 (ko) 2022-09-16
WO2015194178A1 (en) 2015-12-23
US20180366336A1 (en) 2018-12-20
JP2017518645A (ja) 2017-07-06
KR102679289B1 (ko) 2024-06-27
CN111816559A (zh) 2020-10-23
CN106663624B (zh) 2020-08-14
TWI733431B (zh) 2021-07-11
JP6485972B2 (ja) 2019-03-20
KR20170020434A (ko) 2017-02-22
EP3158579A1 (en) 2017-04-26
US20180076046A1 (en) 2018-03-15
US10103031B2 (en) 2018-10-16
KR20230079491A (ko) 2023-06-07
TWI695423B (zh) 2020-06-01
US20170103901A1 (en) 2017-04-13
TW201606867A (zh) 2016-02-16
CN106663624A (zh) 2017-05-10

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