CN111755047A - 用于行锤击缓解的主机协助的刷新命令控制 - Google Patents

用于行锤击缓解的主机协助的刷新命令控制 Download PDF

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Publication number
CN111755047A
CN111755047A CN202010127858.XA CN202010127858A CN111755047A CN 111755047 A CN111755047 A CN 111755047A CN 202010127858 A CN202010127858 A CN 202010127858A CN 111755047 A CN111755047 A CN 111755047A
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refresh
memory
commands
row
threshold number
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Chinese (zh)
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B.纳尔
C.E.科克斯
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Intel Corp
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Intel Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659—Command handling arrangements, e.g. command buffers, queues, command scheduling
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Databases & Information Systems (AREA)
  • Computer Security & Cryptography (AREA)
  • Dram (AREA)
  • Memory System (AREA)
CN202010127858.XA 2019-03-29 2020-02-28 用于行锤击缓解的主机协助的刷新命令控制 Pending CN111755047A (zh)

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CN202311370834.7A CN119517108A (zh) 2019-03-29 2020-02-28 用于行锤击缓解的主机协助的刷新命令控制

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/370,578 US10950288B2 (en) 2019-03-29 2019-03-29 Refresh command control for host assist of row hammer mitigation
US16/370578 2019-03-29

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CN202311370834.7A Pending CN119517108A (zh) 2019-03-29 2020-02-28 用于行锤击缓解的主机协助的刷新命令控制

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US (4) US10950288B2 (enExample)
JP (2) JP7456083B2 (enExample)
KR (2) KR20200115115A (enExample)
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DE (1) DE102020104367A1 (enExample)

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CN112786087A (zh) * 2021-03-15 2021-05-11 长鑫存储技术有限公司 刷新电路及存储器
CN114242132A (zh) * 2021-12-15 2022-03-25 海光信息技术股份有限公司 一种内存刷新计数的方法、装置以及内存控制器
CN115357952A (zh) * 2022-10-18 2022-11-18 合肥奎芯集成电路设计有限公司 针对动态存储器的行锤攻击防御方法和装置
CN115374030A (zh) * 2021-05-21 2022-11-22 美光科技公司 具有存储器发起的命令插入的存储器以及相关联系统、装置和方法
CN116018645A (zh) * 2020-06-23 2023-04-25 优普梅姆公司 用于保护dram存储器装置免受行锤效应的方法和电路
WO2023087533A1 (zh) * 2021-11-19 2023-05-25 长鑫存储技术有限公司 一种锤击刷新方法、锤击刷新电路及半导体存储器
CN116261754A (zh) * 2020-10-26 2023-06-13 高通股份有限公司 具有用于行锤击缓解的快速随机行刷新的dram
US11817141B2 (en) 2021-03-15 2023-11-14 Changxin Memory Technologies, Inc. Refresh control circuit and memory
CN117174135A (zh) * 2022-06-02 2023-12-05 美光科技公司 存储器装置安全性与行锤缓解
US11869567B2 (en) 2021-03-15 2024-01-09 Changxin Memory Technologies, Inc. Refresh control circuit and memory
TWI887734B (zh) * 2022-08-15 2025-06-21 大陸商長鑫科技集團股份有限公司 獲取行錘刷新地址的方法、設備及電腦可讀儲存媒體

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