JP2021111333A5 - - Google Patents
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- Publication number
- JP2021111333A5 JP2021111333A5 JP2020150180A JP2020150180A JP2021111333A5 JP 2021111333 A5 JP2021111333 A5 JP 2021111333A5 JP 2020150180 A JP2020150180 A JP 2020150180A JP 2020150180 A JP2020150180 A JP 2020150180A JP 2021111333 A5 JP2021111333 A5 JP 2021111333A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- write
- write count
- data
- memory arrays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/742,332 | 2020-01-14 | ||
| US16/742,332 US11200113B2 (en) | 2020-01-14 | 2020-01-14 | Auto-increment write count for nonvolatile memory |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021111333A JP2021111333A (ja) | 2021-08-02 |
| JP2021111333A5 true JP2021111333A5 (enExample) | 2025-01-29 |
| JP7687768B2 JP7687768B2 (ja) | 2025-06-03 |
Family
ID=70550520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020150180A Active JP7687768B2 (ja) | 2020-01-14 | 2020-09-07 | 不揮発性メモリの自動インクリメント書き込みカウント |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11200113B2 (enExample) |
| EP (1) | EP3852109B1 (enExample) |
| JP (1) | JP7687768B2 (enExample) |
| KR (1) | KR20210091647A (enExample) |
| CN (1) | CN113129949A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7401193B2 (ja) * | 2019-04-17 | 2023-12-19 | キヤノン株式会社 | 情報処理装置及びその制御方法並びにプログラム |
| US11403195B2 (en) * | 2019-08-07 | 2022-08-02 | Micron Technology, Inc. | Application of dynamic trim strategy in a die-protection memory sub-system |
| US11561729B2 (en) | 2020-08-19 | 2023-01-24 | Micron Technology, Inc. | Write determination counter |
| US11373705B2 (en) * | 2020-11-23 | 2022-06-28 | Micron Technology, Inc. | Dynamically boosting read voltage for a memory device |
| US11971815B2 (en) * | 2021-08-31 | 2024-04-30 | Micron Technology, Inc. | Write budget control of time-shift buffer for streaming devices |
| CN119234273A (zh) | 2023-04-29 | 2024-12-31 | 长江存储科技有限责任公司 | 执行写入干扰管理的存储器控制器和存储器系统 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4394413B2 (ja) * | 2003-10-24 | 2010-01-06 | 株式会社日立製作所 | 情報記憶装置及び情報処理システム |
| US7631138B2 (en) * | 2003-12-30 | 2009-12-08 | Sandisk Corporation | Adaptive mode switching of flash memory address mapping based on host usage characteristics |
| US9153337B2 (en) | 2006-12-11 | 2015-10-06 | Marvell World Trade Ltd. | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| KR101411499B1 (ko) * | 2008-05-19 | 2014-07-01 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 관리 방법 |
| US7830726B2 (en) | 2008-09-30 | 2010-11-09 | Seagate Technology Llc | Data storage using read-mask-write operation |
| JP2012027649A (ja) * | 2010-07-22 | 2012-02-09 | Toshiba Corp | データ記憶装置及びデータ読み出し方法 |
| US9176800B2 (en) * | 2011-08-31 | 2015-11-03 | Micron Technology, Inc. | Memory refresh methods and apparatuses |
| JP2013246533A (ja) * | 2012-05-24 | 2013-12-09 | Sony Corp | 電子機器、メモリ管理システムおよびメモリ管理方法 |
| KR20140008702A (ko) | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 쓰기 방법 |
| US9424946B2 (en) * | 2013-02-08 | 2016-08-23 | Seagate Technology Llc | Non-volatile buffering to enable sloppy writes and fast write verification |
| US9430375B2 (en) * | 2013-12-30 | 2016-08-30 | International Business Machines Corporation | Techniques for storing data in bandwidth optimized or coding rate optimized code words based on data access frequency |
| KR102244618B1 (ko) * | 2014-02-21 | 2021-04-26 | 삼성전자 주식회사 | 플래시 메모리 시스템 및 플래시 메모리 시스템의 제어 방법 |
| WO2016004388A1 (en) * | 2014-07-03 | 2016-01-07 | Yale University | Circuitry for ferroelectric fet-based dynamic random access memory and non-volatile memory |
| JP6421042B2 (ja) * | 2015-01-16 | 2018-11-07 | ルネサスエレクトロニクス株式会社 | 情報処理装置 |
| US9524790B1 (en) * | 2015-08-02 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory cells wear reduction |
| US10592114B2 (en) * | 2016-03-03 | 2020-03-17 | Samsung Electronics Co., Ltd. | Coordinated in-module RAS features for synchronous DDR compatible memory |
| US10031845B2 (en) | 2016-04-01 | 2018-07-24 | Intel Corporation | Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device |
| US10019198B2 (en) | 2016-04-01 | 2018-07-10 | Intel Corporation | Method and apparatus for processing sequential writes to portions of an addressable unit |
| JP2018120346A (ja) * | 2017-01-24 | 2018-08-02 | 日本電気株式会社 | 情報処理システムおよび情報処理システムの制御方法 |
| US11099760B2 (en) * | 2017-12-14 | 2021-08-24 | Intel Corporation | Background data refresh using a system timestamp in storage devices |
| US10719248B2 (en) * | 2018-04-20 | 2020-07-21 | Micron Technology, Inc. | Apparatuses and methods for counter update operations |
| TW202001565A (zh) * | 2018-06-21 | 2020-01-01 | 慧榮科技股份有限公司 | 管理快閃記憶體模組的方法及相關的快閃記憶體控制器及電子裝置 |
| US10672452B2 (en) * | 2018-09-21 | 2020-06-02 | Micron Technology, Inc. | Temperature informed memory refresh |
| US10825534B2 (en) * | 2018-10-26 | 2020-11-03 | Intel Corporation | Per row activation count values embedded in storage cell array storage cells |
-
2020
- 2020-01-14 US US16/742,332 patent/US11200113B2/en active Active
- 2020-09-07 JP JP2020150180A patent/JP7687768B2/ja active Active
- 2020-09-15 KR KR1020200118221A patent/KR20210091647A/ko active Pending
- 2020-09-21 CN CN202010997363.2A patent/CN113129949A/zh active Pending
- 2020-09-22 EP EP20197332.8A patent/EP3852109B1/en active Active
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