JP7687768B2 - 不揮発性メモリの自動インクリメント書き込みカウント - Google Patents

不揮発性メモリの自動インクリメント書き込みカウント Download PDF

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JP7687768B2
JP7687768B2 JP2020150180A JP2020150180A JP7687768B2 JP 7687768 B2 JP7687768 B2 JP 7687768B2 JP 2020150180 A JP2020150180 A JP 2020150180A JP 2020150180 A JP2020150180 A JP 2020150180A JP 7687768 B2 JP7687768 B2 JP 7687768B2
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memory
write
write count
data
memory arrays
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JP2021111333A5 (enExample
JP2021111333A (ja
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カワミ シェコウフェー
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Intel Corp
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Intel Corp
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    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
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    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
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    • G06F11/3037—Monitoring arrangements specially adapted to the computing system or computing system component being monitored where the computing system component is a memory, e.g. virtual memory, cache
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    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
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    • G—PHYSICS
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    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Software Systems (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Multimedia (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
JP2020150180A 2020-01-14 2020-09-07 不揮発性メモリの自動インクリメント書き込みカウント Active JP7687768B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/742,332 2020-01-14
US16/742,332 US11200113B2 (en) 2020-01-14 2020-01-14 Auto-increment write count for nonvolatile memory

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JP2021111333A JP2021111333A (ja) 2021-08-02
JP2021111333A5 JP2021111333A5 (enExample) 2025-01-29
JP7687768B2 true JP7687768B2 (ja) 2025-06-03

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US (1) US11200113B2 (enExample)
EP (1) EP3852109B1 (enExample)
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KR (1) KR20210091647A (enExample)
CN (1) CN113129949A (enExample)

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JP2007517320A (ja) 2003-12-30 2007-06-28 サンディスク コーポレイション ホストの使用特性に基づいたフラッシュメモリのアドレスマッピングの適応的モード切り換え
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JP2019106174A (ja) 2017-12-14 2019-06-27 インテル・コーポレーション 記憶デバイスにおけるシステムタイムスタンプを用いたバックグラウンドデータ・リフレッシュ
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CN113129949A (zh) 2021-07-16
EP3852109A1 (en) 2021-07-21
US20200151052A1 (en) 2020-05-14
US11200113B2 (en) 2021-12-14
JP2021111333A (ja) 2021-08-02
KR20210091647A (ko) 2021-07-22
EP3852109B1 (en) 2025-04-30

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