CN111708260B - 在纳米压印光刻中减少填充时间的基材预处理 - Google Patents
在纳米压印光刻中减少填充时间的基材预处理 Download PDFInfo
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- CN111708260B CN111708260B CN202010752918.7A CN202010752918A CN111708260B CN 111708260 B CN111708260 B CN 111708260B CN 202010752918 A CN202010752918 A CN 202010752918A CN 111708260 B CN111708260 B CN 111708260B
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- 230000002441 reversible effect Effects 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229940066767 systemic antihistamines phenothiazine derivative Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- RLGKSXCGHMXELQ-ZRDIBKRKSA-N trans-2-styrylquinoline Chemical compound C=1C=C2C=CC=CC2=NC=1\C=C\C1=CC=CC=C1 RLGKSXCGHMXELQ-ZRDIBKRKSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polymerisation Methods In General (AREA)
- Paints Or Removers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010752918.7A CN111708260B (zh) | 2015-09-08 | 2016-09-08 | 在纳米压印光刻中减少填充时间的基材预处理 |
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562215316P | 2015-09-08 | 2015-09-08 | |
| US62/215,316 | 2015-09-08 | ||
| US15/004,679 | 2016-01-22 | ||
| US15/004,679 US20170068159A1 (en) | 2015-09-08 | 2016-01-22 | Substrate pretreatment for reducing fill time in nanoimprint lithography |
| US15/195,789 | 2016-06-28 | ||
| US15/195,789 US20170066208A1 (en) | 2015-09-08 | 2016-06-28 | Substrate pretreatment for reducing fill time in nanoimprint lithography |
| CN201610811661.1A CN106842835B (zh) | 2015-09-08 | 2016-09-08 | 在纳米压印光刻中减少填充时间的基材预处理 |
| CN202010752918.7A CN111708260B (zh) | 2015-09-08 | 2016-09-08 | 在纳米压印光刻中减少填充时间的基材预处理 |
Related Parent Applications (1)
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| CN201610811661.1A Division CN106842835B (zh) | 2015-09-08 | 2016-09-08 | 在纳米压印光刻中减少填充时间的基材预处理 |
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| CN111708260A CN111708260A (zh) | 2020-09-25 |
| CN111708260B true CN111708260B (zh) | 2023-11-10 |
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| CN202010752918.7A Active CN111708260B (zh) | 2015-09-08 | 2016-09-08 | 在纳米压印光刻中减少填充时间的基材预处理 |
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| Country | Link |
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| JP (2) | JP6141500B2 (enExample) |
| KR (2) | KR102115280B1 (enExample) |
| CN (2) | CN106842835B (enExample) |
| SG (2) | SG10202102937RA (enExample) |
| TW (1) | TWI708118B (enExample) |
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| EP3347410B1 (en) * | 2015-09-08 | 2024-06-19 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
| US10754245B2 (en) * | 2016-03-31 | 2020-08-25 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| US10845700B2 (en) * | 2016-03-31 | 2020-11-24 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| US10883006B2 (en) * | 2016-03-31 | 2021-01-05 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| US10754244B2 (en) * | 2016-03-31 | 2020-08-25 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| US10829644B2 (en) * | 2016-03-31 | 2020-11-10 | Canon Kabushiki Kaisha | Pattern forming method as well as production methods for processed substrate, optical component, circuit board, electronic component and imprint mold |
| TW201825617A (zh) * | 2016-09-16 | 2018-07-16 | 日商富士軟片股份有限公司 | 壓印用底漆層形成用組成物、壓印用底漆層及積層體 |
| TW201817582A (zh) * | 2016-09-16 | 2018-05-16 | 日商富士軟片股份有限公司 | 圖案形成方法及半導體元件的製造方法 |
| WO2018159576A1 (ja) * | 2017-02-28 | 2018-09-07 | 富士フイルム株式会社 | プライマ層形成用組成物、キット、プライマ層および積層体 |
| US10317793B2 (en) * | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
| JP7425602B2 (ja) | 2017-03-08 | 2024-01-31 | キヤノン株式会社 | パターン形成方法、ならびに加工基板、光学部品及び石英モールドレプリカの製造方法、ならびにインプリント前処理コーティング材料及びそれとインプリントレジストとのセット |
| CN110546734B (zh) | 2017-03-08 | 2024-04-02 | 佳能株式会社 | 固化物图案的制造方法和光学部件、电路板和石英模具复制品的制造方法以及用于压印预处理的涂覆材料及其固化物 |
| JP7039865B2 (ja) * | 2017-05-26 | 2022-03-23 | 大日本印刷株式会社 | パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム |
| TWI758490B (zh) | 2017-06-14 | 2022-03-21 | 日商富士軟片股份有限公司 | 套組、積層體、積層體的製造方法、硬化物圖案的製造方法及電路基板的製造方法 |
| KR102419881B1 (ko) | 2017-08-10 | 2022-07-12 | 캐논 가부시끼가이샤 | 패턴 형성 방법 |
| WO2019065526A1 (ja) * | 2017-09-26 | 2019-04-04 | 富士フイルム株式会社 | インプリント用下層膜形成用組成物、キット、インプリント用硬化性組成物、積層体、積層体の製造方法、硬化物パターンの製造方法および回路基板の製造方法 |
| JP6754344B2 (ja) * | 2017-09-26 | 2020-09-09 | 富士フイルム株式会社 | インプリント用下層膜形成用組成物、キット、積層体、積層体の製造方法、硬化物パターンの製造方法、回路基板の製造方法 |
| JP7034696B2 (ja) | 2017-12-14 | 2022-03-14 | キヤノン株式会社 | 硬化物パターンの製造方法、加工基板の製造方法、回路基板の製造方法、電子部品の製造方法、およびインプリントモールドの製造方法 |
| TWI783115B (zh) | 2018-02-14 | 2022-11-11 | 日商富士軟片股份有限公司 | 試劑盒、壓印用下層膜形成組成物、圖案形成方法、半導體器件的製造方法 |
| JPWO2020059603A1 (ja) * | 2018-09-18 | 2021-09-16 | 富士フイルム株式会社 | インプリント用積層体、インプリント用積層体の製造方法、パターン形成方法およびキット |
| JP7096898B2 (ja) | 2018-09-28 | 2022-07-06 | 富士フイルム株式会社 | インプリント用下層膜形成用組成物、インプリント用下層膜形成用組成物の製造方法、パターン製造方法、半導体素子の製造方法、硬化物およびキット |
| US10780682B2 (en) * | 2018-12-20 | 2020-09-22 | Canon Kabushiki Kaisha | Liquid adhesion composition, multi-layer structure and method of making said structure |
| US20200308320A1 (en) * | 2019-03-26 | 2020-10-01 | Canon Kabushiki Kaisha | Curable composition comprising dual-functional photoinitiator |
| JP7222811B2 (ja) | 2019-06-04 | 2023-02-15 | キオクシア株式会社 | インプリント装置、インプリント方法、及び半導体装置の製造方法 |
| JP2021044299A (ja) | 2019-09-06 | 2021-03-18 | キオクシア株式会社 | インプリント方法、半導体装置の製造方法、及びインプリント装置 |
| CN116339072A (zh) * | 2023-03-13 | 2023-06-27 | 太仓斯迪克新材料科技有限公司 | 紫外光固化胶的压印工艺 |
| CN117410168B (zh) * | 2023-12-13 | 2024-03-29 | 江西兆驰半导体有限公司 | 一种图形化蓝宝石衬底及其制备方法 |
| CN117650156A (zh) * | 2023-12-14 | 2024-03-05 | 英特盛科技股份有限公司 | 多层次封装微结构制作方法 |
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2016
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2020
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| JP2009208409A (ja) * | 2008-03-05 | 2009-09-17 | Toyo Gosei Kogyo Kk | パターン形成方法 |
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| JP2017152705A (ja) | 2017-08-31 |
| JP6723947B2 (ja) | 2020-07-15 |
| CN111708260A (zh) | 2020-09-25 |
| KR20170030051A (ko) | 2017-03-16 |
| CN106842835B (zh) | 2020-12-25 |
| JP6141500B2 (ja) | 2017-06-07 |
| TW201723649A (zh) | 2017-07-01 |
| SG10202102937RA (en) | 2021-04-29 |
| CN106842835A (zh) | 2017-06-13 |
| KR102466726B1 (ko) | 2022-11-15 |
| KR102115280B1 (ko) | 2020-05-26 |
| KR20200058357A (ko) | 2020-05-27 |
| JP2017055108A (ja) | 2017-03-16 |
| SG10201607459WA (en) | 2017-04-27 |
| TWI708118B (zh) | 2020-10-21 |
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