CN111705297A - 高性能晶圆级硫化铅近红外光敏薄膜及其制备方法 - Google Patents
高性能晶圆级硫化铅近红外光敏薄膜及其制备方法 Download PDFInfo
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Abstract
一种高性能晶圆级硫化铅近红外光敏薄膜及其制备方法,属于光电子器件领域。首先,对选取基底材料的表面进行清洁处理。其次,在高背景真空度下,将气化后的氧化剂引入真空蒸镀腔体,在洁净基底表面缓慢沉积PbS薄膜,获得颗粒适中、结构疏松、取向一致的微观结构。最后,在一定温度和压强条件下,载气携带碘蒸汽敏化处理S2所述PbS薄膜,得高性能晶圆级PbS光敏薄膜。本发明制备方法简单、制备成本低廉、重复性好,可实现晶圆级PbS光敏薄膜的制备,利于大规模商业化生产;制备PbS光敏薄膜光电探测率高,600K黑体室温峰值探测率>8×1010Jones;本发明制备PbS光敏薄膜表面光滑,晶圆级光敏面内相应不均匀性<5%,满足制备PbS百万像素级阵列成像系统的要求。
Description
技术领域
本发明属于光电子器件领域,涉及一种红外光导型探测器光敏薄膜及其制备方法。具体 是指采用真空物理低温氧化沉积技术制备对近红外(1~3μm)辐射敏感硫化铅(PbS)光敏薄 膜。所述的高性能是指室温峰值探测率(D*)不低于8×1010Jones。
背景技术
红外焦平面探测器是将不可见的红外辐射转变为可视图像,是探测、识别和分析物体红 外信息的核心部件。非制冷红外探测器无需制冷装置,能够在室温状态下工作,具有体积小、 质量轻、功耗小、寿命长、成本低、启动快等优点,在工业检测、制程控制、城市监控、消 防安保、交通管理、气车无人驾驶等领域得到了广泛的应用。
硫化铅(PbS)已被证实可用于开发非制冷近红(1-3μm)外光子型探测器,具有非常广 泛的应用前景。2001年,美国Litton Electro-Optical Systems公司采用湿化学制备方法成功制 备出混成式320×240像素规模、30μm像元尺寸PbS近红外光导型焦平面成像系统,开启了 非制冷光子型成像系统大规模研发的序幕(T.Beystrum,N.Jacksen,M.Sutton,et al.,Low cost 320×240Lead Salt Focal Plane Array,Proc.SPIE:InfraredImaging Systems:Design,Analysis, Modeling,and Testing XII,2001,4372,96-104)。作为制备铅盐薄膜的标准工艺,湿化学(CBD) 制备PbS技术较为成熟,辅助于温和的中低温氧化处理工艺(称之为敏化工艺),可获得高 灵敏度的PbS近红外探测器,满足军事领域对器件性能的苛刻要求。然而,湿化学PbS光敏 薄膜存在工艺复杂、薄膜表面粗糙、均匀度差、制作成本高、可重复操控性差、难于实现大 面积制备等问题,极大限制了PbS百万像素级阵列成像系统的发展,成为湿化学制备技术无 法逾越的障碍(T.H.Johnson,Lead SaltDetectors And Arrays PbS And PbSe,Proc.SPIE 0443: Infrared Detectors,1983,60-94;司俊杰,制备红外探测器光敏铅盐薄膜的方法, CN200610156551.2,2009.11.04;孙维国,胡荣武,硫化铅多晶薄膜的激光敏化方法, CN87102141,1991.05.15;陈松,亚红,孟锦等,一种可实现自校功能的硫化铅红外探测器, CN201620725303.4,2018.03.27;山奇,史智,肖竹,硫化铅红外探测器,CN94218772.5, 19960110;邓宏,陈金菊,韦敏,李国伟,一种(200)择优取向硫化铅薄膜的制备方法, CN101792930B,2011.12.21;石磊,孙喜桂,沈向丞等,一种化学液相法制备硫化铅薄膜的 方法,CN109559977A,实质审查的生效2019.03.01)。相比与CBD方法,物理工艺虽然易 于制备大面积、表面光滑、均匀度高的光敏薄膜,是突破湿化学工艺的技术壁垒最理想的替 代技术。
然而,现有制备PbS薄膜的物理工艺,如热蒸发法、磁控溅射法、分子束外延法、化学 气象沉积法等制造的PbS探测器不仅灵敏度低(比CBD工艺器件低一个量级),而且缺乏重现性,成为物理制备工艺产业化应用的最大技术壁垒(J.V.Morgan,U.S.3,026,218,1962。) 因此,开发高性能、晶圆级PbS光敏薄膜物理制备技术是推进百万像素级近红外非制冷成像 系统的关键。
发明内容
本发明的目的在于提供一种高性能晶圆级PbS光敏薄膜的物理制备方法。本发明方法简 单、重复性高,具有优异的红外光敏特性,且均匀性能达到晶圆尺寸。
为了达到上述目的,本发明采用的技术方案为:
一种高性能晶圆级硫化铅近红外光敏薄膜的制备方法,包括以下步骤:
S1:选取适宜的晶圆级基底材料,并对选取基底材料的表面进行清洁处理,用于提升PbS 薄膜和晶圆级基底的附着力。
S2:在高背景真空度下,将气化后的氧化剂引入真空蒸镀腔体,在S1所述洁净基底表面 缓慢沉积PbS薄膜,获得颗粒适中、结构疏松、取向一致的微观结构。
S3:在一定温度和压强条件下,载气携带碘蒸气敏化处理S2所述PbS薄膜,得高性能 晶圆级PbS光敏薄膜。
在上述技术方案中,步骤S1中所述晶圆级基底应具有良好的绝缘特性,且能够在高温 (>450℃)处理后依然保持良好的化学稳定性、机械性能和电学性能。包括但不限于高阻硅 (Si)、蓝宝石(Al2O3)、熔融石英玻璃(SiO2)、普通玻璃(Glass)、硫化锌(ZnS)、 硒化锌(ZnSe)、氟化钙(CaF2)中的一种。
在上述技术方案中,步骤S1中的晶圆级基底表面处理可采用但不限于湿化学清洗或者高 温热清洗。优选地,采用湿化学清洗处理。其工艺包括如下:
A:依次置于丙酮、乙醇、去离子水中进行超声清洗;
B:用酸洗、碱洗、等离子体清洗方式中的一种或多种清洗;
C:用去离子水对清洗后的基底进行洗净,干燥后得到表面洁净的晶圆级基底。
在上述技术方案中,步骤S2中引入真空腔室中的氧化剂包括但不限于卤素气体、臭氧、 双氧水等。优选地,采用卤素气体。其工艺如下:
A:真空室的背景真空度不低于2×10-4Pa;
B:流量控制在10~25sccm;
C:引入氧化剂后真空室中真空度维持在2~5×10-2Pa;
在上述技术方案中,步骤S2真空室中PbS薄膜制备可以采用但不限于电阻热蒸发、电 子束热蒸发或磁控溅射等沉积技术。优选地,采用电阻热蒸发沉积技术。其工艺如下:
A:PbS蒸发源的纯度不低于99.99%;
B:PbS沉积温度控制在50~120摄氏度;
C:PbS沉积速率控制在0.4~1.2微米/小时;
D:PbS厚度控制在1.2~1.5微米;
在上述技术方案中,步骤S3中引载气可以选择但不限于空气、高纯氧气(纯度不低于 99.99%)和惰性气体。优选的,采用氧气。其碘蒸气敏化工艺如下:
A:引载气的流量在1~10SCCM;
B:碘蒸气的流量控制在0.01~1sccm;
C:敏化压强控制在1.001~1.005标准大气压;
D:敏化温度控制在250~400摄氏度;温度降至250℃后停止供给碘蒸气;温度降至室温 后,停止供给引载气;
E:敏化时间控制在5~240min。
一种高性能晶圆级硫化铅近红外光敏薄膜,是由上述制备方法制备得到的。
本发明的有益效果在于:
(1)本发明制备方法简单,制备成本低廉,工艺控制简单易操作,重复性好,可实现晶 圆级PbS光敏薄膜的制备,有利于大规模商业化生产。
(2)本发明制备PbS光敏薄膜光电探测率高,600K黑体室温峰值探测率>8×1010Jones。
(3)本发明制备PbS光敏薄膜表面光滑,晶圆级光敏面内相应不均匀性<5%,满足制备 PbS百万像素级阵列成像系统的要求。
附图说明
图1典型PbS光敏薄膜截面SEM图像;
图2氧化剂流量对PbS光敏薄膜探测率的影响;
图3敏化工艺中敏化温度对PbS光敏薄膜探测率的影响;
图4敏化工艺中敏化时间对PbS光敏薄膜探测率的影响;
图5敏化工艺中氧气/碘气流量比对PbS光敏薄膜探测率的影响。
具体实施方式
下面结合实例及附图,对本发明进一步地详细说明,但本发明的实施方式不限于此。
实施例一
S1将3英寸普通玻璃依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对玻璃基底进行反复冲洗,并再次用去离子水中 超声清洗10min,干燥后得到表面洁净的玻璃晶圆基底;
S2将洁净的玻璃晶圆基底送入PbS蒸发反应室内,待真空度达到5×10-4Pa后,将基底 温度升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS薄膜沉积。2h后关闭挡板,以及停止PbS源及基底加热电源,并停止氯气输入。薄膜厚度为1.2微米。PbS沉积速率为0.6微米/小时。
S3将玻璃晶圆PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.001个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持30min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K 黑体探测率室温峰值为2.5×1011Jones,如图2、图3、图4和图5中A点所示。
实施例二
S1将高阻硅晶圆放置于高温炉中进行高温氧化热清洗。热清洗温度为600℃,热清洗时 间为3h,氧气的流量为10sccm。
S2将洁净的Si晶圆送入PbS蒸发反应室内,待真空度达到5×10-4Pa后,将基底温度升 高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氯气输入。薄膜厚度为1.2微米。PbS沉积 速率为0.6微米/小时。
S3将晶圆Si基底上PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内 压强维持在1.01个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持30min。 随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600 K黑体,PbS探测器室温峰值探测率为2.2×1011Jones。
实施例三
S1将3英寸普通玻璃晶圆依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中 超声清洗10min,干燥后得到表面洁净的玻璃晶圆基底。
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为25sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在5×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。3h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.4微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.005个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持30min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K 黑体,PbS探测器室温峰值探测率为0.8×1011Jones,如图2中B点所示。
实施例四
S1将3英寸普通玻璃依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中超声 清洗10min,干燥后得到表面洁净的基底。
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.6微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.001个大气压下。而后升温至200℃后,通入0.1sccm的碘蒸气,并维持30min。随后开始降温,并停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K黑体,PbS探测 器室温峰值探测率为0.78×1011Jones,如图3C点所示。
实施例五
S1将3英寸普通玻璃晶圆依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中 超声清洗10min,干燥后得到表面洁净的玻璃晶圆基底;
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.6微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.001个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持75min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K 黑体,PbS探测器室温峰值探测率为0.92×1011Jones,如图4D点所示。
实施例六
S1将3英寸普通玻璃依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中超声 清洗10min,干燥后得到表面洁净的基底;
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.6微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在1sccm,使得炉内压强维 持在1.0001个大气压下。而后升温至400℃后,通入1sccm的碘蒸气,并维持2min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K黑 体,PbS探测器室温峰值探测率为0.76×1011Jones,如图5E点所示。
实施例七
S1将3英寸普通玻璃依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中超声 清洗10min,干燥后得到表面洁净的基底。
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.6微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在1sccm,使得炉内压强维 持在1.001个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持10min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K 黑体,PbS探测器室温峰值探测率为1.5×1011Jones,如图5F点所示。
实施例八
S1将3英寸普通玻璃依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中超声 清洗10min,干燥后得到表面洁净的基底。
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到50℃后,逐渐升高PbS源温至喷发温度。随后引入流量为10sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在2×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。2h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.2微米。PbS沉 积速率为0.6微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.01个大气压下。而后升温至400℃后,通入0.01sccm的碘蒸气,并维持240min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600 K黑体,PbS探测器室温峰值探测率为2.0×1011Jones,如图5G点所示。
实施例九
S1将3英寸普通玻璃晶圆依次置于丙酮、乙醇、去离子水中各超声清洗10min后,再置于浓硫酸中浸渍2h,随后采用流动的去离子水对基底进行反复冲洗,并再次在去离子水中 超声清洗10min,干燥后得到表面洁净的玻璃晶圆基底。
S2将洁净的玻璃基底送入PbS蒸发反应室内,待真空度达到2×10-4Pa后,将基底温度 升高到120℃后,逐渐升高PbS源温至喷发温度。随后引入流量为20sccm的氯气,并调节真空系统抽力使得反应室内的真空度维持在4×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。3h后关闭挡板和PbS源及基底加热电源,并停止氧化剂输入。薄膜厚度为1.3微米。PbS沉积速率为0.45微米/小时。
S3将玻璃基底PbS薄膜置于敏化炉中,通入氧气,流量控制在10sccm,使得炉内压强 维持在1.01个大气压下。而后升温至400℃后,通入0.1sccm的碘蒸气,并维持30min。随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给氧气。此时,600K 黑体,PbS探测器室温峰值探测率为1.6×1011Jones。
实施例十
S1将蓝宝石(Al2O3)晶圆放置于高温炉中进行高温氧化热清洗。热清洗温度为600℃, 热清洗时间为3h,氧气的流量为10sccm。
S2将洁净的蓝宝石晶圆送入PbS蒸发反应室内,待真空度达到8×10-4Pa后,将基底温 度升高到120℃后,逐渐升高PbS源温至喷发温度。随后引入流量为18sccm的臭氧,并调节真空系统抽力使得反应室内的真空度维持在5×10-2Pa。稳定后,打开生长挡板,开始PbS沉积。沉积后关闭挡板和PbS源及基底加热电源,并停止臭氧输入。薄膜厚度为1.2微米,PbS沉积速率控制在0.8微米/小时。
S3将蓝宝石晶圆基底上PbS薄膜置于敏化炉中,通入空气,流量控制在2sccm,使得炉 内压强维持在1.001个大气压下。而后升温至360℃后,通入1sccm的碘蒸气,并维持3min。 随后开始降温,温度降至250℃后停止供给碘蒸气。降至室温后,停止供给空气。此时,600 K黑体,PbS探测器室温峰值探测率为1.1×1011Jones。
实施例十一
S1将硫化锌(ZnS)晶圆依次置于丙酮、乙醇、去离子水中各超声清洗10min后,干燥后得到表面洁净的基底。
S2将洁净的ZnS晶圆送入PbS蒸发反应室内,待真空度达到5×10-4Pa后,将基底温度 升高到80℃后,逐渐升高PbS源温至喷发温度。随后用氧气作为载气,通过过氧化氢液体, 流量为25sccm,并调节真空系统抽力使得反应室内的真空度维持在3×10-2Pa。稳定后,打开 生长挡板,开始PbS沉积。沉积后关闭挡板和PbS源及基底加热电源,并停止载气和过氧化 氢输入。薄膜厚度为1.5微米,PbS沉积速率控制在1.2微米/小时。
S3将ZnS晶圆基底上PbS薄膜置于敏化炉中,通入氩气,流量控制在5sccm,使得炉内压强维持在1.005个大气压下。而后升温至250℃后,通入0.01sccm的碘蒸气,并维持240min。随后开始降温并停止供给碘蒸气。降至室温后,停止供给氩气。此时,600K黑体,PbS探测器室温峰值探测率为0.96×1011Jones。
以上所述实施例仅表达本发明的实施方式,但并不能因此而理解为对本发明专利的范围 的限制,应当指出,对于本领域的技术人员来说,在不脱离本发明构思的前提下,还可以做 出若干变形和改进,这些均属于本发明的保护范围。
Claims (10)
1.一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,包括以下步骤
S1:选取适宜的基底材料,并对选取基底材料的表面进行清洗处理,得到表面洁净的基底;所述基底具有绝缘特性、且能够耐高温处理;
S2:在高背景真空度下,将气化后的氧化剂引入真空蒸镀腔体,在步骤S1得到的洁净基底表面缓慢沉积PbS薄膜,获得颗粒适中、结构疏松、取向一致的微观结构;所述引入氧化剂后真空室中真空度维持在2~5×10-2帕斯卡,引入氧化剂的流量控制在10~25sccm;所述PbS薄膜沉积温度控制在50~120摄氏度,PbS沉积速率控制在0.5~1.2微米/小时,PbS厚度控制在1.2~1.5微米;
S3:在200~400℃温度条件下,载气携带碘蒸汽敏化处理步骤S2得到的PbS薄膜,处理时间5~240min,得到高性能PbS光敏薄膜。
2.根据权利要求1所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,步骤S1中所述基底能够耐>450℃的高温处理,包括高阻硅Si、蓝宝石Al2O3、熔融石英玻璃SiO2、普通玻璃、硫化锌ZnS、硒化锌ZnSe、氟化钙CaF2中的一种。
3.根据权利要求1所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S1中的基底表面处理采用湿化学清洗或者高温热清洗;其工艺包括如下:
1)依次置于丙酮、乙醇、去离子水中进行超声清洗;
2)用酸洗、碱洗、等离子体清洗方式中的一种或多种清洗;
3)用去离子水对清洗后的基底进行洗净,干燥后得到表面洁净的基底。
4.根据权利要求3所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S1中基底表面处理优选湿化学清洗处理。
5.根据权利要求1所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S2中引入真空腔室中的氧化剂包括卤素气体、臭氧、双氧水,引入氧化剂后前真空室的背景真空度不低于5×10-4帕斯卡。
6.根据权利要求5所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S2中引入真空腔室中的氧化剂优选卤素气体。
7.根据权利要求1所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S2真空室中PbS薄膜沉积方法采用电阻热蒸发沉积技术、电子束热蒸发沉积技术或磁控溅射沉积技术,PbS蒸发源的纯度不低于99.99%。
8.根据权利要求7所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S2真空室中PbS薄膜沉积方法优选电阻热蒸发沉积技术。
9.根据权利要求1所述的一种高性能晶圆级硫化铅近红外光敏薄膜制备方法,其特征在于,所述步骤S3中载气可以选择空气、高纯氧气和惰性气体,引载气流量在1-10sccm;碘蒸汽的流量控制在0.01~1sccm;敏化处理压强条件为1.001~1.005标准大气压。
10.一种高性能晶圆级硫化铅近红外光敏薄膜,其特征在于,所述高性能晶圆级硫化铅近红外光敏薄膜是由权利要求1-9任一所述的制备方法制备得到的,所述硫化铅近红外光敏薄膜的光电探测率高,600K黑体室温峰值探测率>8×1010Jones;其表面光滑,晶圆级光敏面内相应不均匀性<5%。
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