CN111505748A - 一种调光膜及其制备方法 - Google Patents
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Abstract
一种调光膜及其制备方法,包括基材层、起导电功能的ITO镀层,所述基材层的一面通过涂布工艺涂设有HC加硬层,所述基材层的另一面通过涂布工艺涂设有IM加硬层,所述ITO镀层通过磁控溅射工艺镀在所述HC加硬层或所述IM加硬层上。IM加硬层或HC加硬层涂布在基材层的正反两面,在ITO镀层前,先在所述HC加硬层或所述IM加硬层上通过磁控溅射工艺镀设一层硅镀层打底作为保护层,ITO镀层通过镀设有硅镀层的IM加硬层或HC加硬层间接镀在基材层上,增加硅层,促使ITO镀层和基材层能够紧密贴合,降低脱落现象,同时提高光学效果,并增强了抗划伤能力。
Description
技术领域
本发明涉及一种调光膜及其制备方法。
背景技术
调光膜产品是一种新型的电子控光产品,是制作调光玻璃的核心材料。通过电压来控制液晶分子的排列顺序从而控制产品的透明度,根据需要和爱好切换透明或者磨砂的玻璃状态;操作简单,寿命较长,另外还可以隔绝紫外线等。
现有专利中这种调光膜用ITO导电膜主要是过涂布压合制备得到,或者直接在基材上进行ITO镀膜,这可能造成ITO和基材贴合不够紧密,使得镀层脱落。
发明内容
本发明需要解决的技术问题是提供一种调光膜。
为了解决上述技术问题,本发明提供的技术方案是:一种调光膜,包括基材层、起导电功能的ITO镀层,所述基材层的一面通过涂布工艺涂设有HC加硬层,所述基材层的另一面通过涂布工艺涂设有IM加硬层,在所述HC加硬层或者所述IM加硬层上通过磁控溅射工艺镀有硅镀层,所述ITO镀层通过磁控溅射工艺镀在所述硅镀层上。
在某些实施方式中,所述硅镀层的厚度为5-10nm。
在某些实施方式中,所述ITO镀层的厚度为40-60nm。
在某些实施方式中,所述HC加硬层的厚度为1-2um,所述IM加硬层的厚度为700-800nm。
在某些实施方式中,所述硅镀层覆盖于所述IM加硬层上,所述HC加硬层上贴覆有PET保护膜,厚度为30-125um。
在某些实施方式中,所述ITO镀层上贴覆有CPP保护膜,厚度为40-125um。
在某些实施方式中,所述基材层为聚对苯二甲酸乙二酯薄膜、聚酰亚胺薄膜、聚碳酸酯薄膜、聚甲基丙烯酸甲酯薄膜、聚脂塑料薄膜、环氧塑料薄膜中的一种。
在某些实施方式中,所述基材层为聚对苯二甲酸乙二酯薄膜,厚度为50um、100um、125um或188um,透光率在90%以上。
本发明解决的又一技术问题是提供一种制备调光膜的方法。
为了解决上述技术问题,本发明提供的技术方案是:一种制备调光膜的方法,包括以下步骤:
步骤一:在所述基材层的一面通过涂布工艺涂设HC加硬层;
步骤二:在所述基材层的另一面通过涂布工艺涂设IM加硬层;
步骤三:在所述HC加硬层上贴覆PET保护膜;
步骤四:在所述IM加硬层上通过磁控溅射工艺镀设所述硅镀层;
步骤五:在所述硅镀层上通过磁控溅射工艺镀设所述ITO镀层;
步骤六:在所述ITO镀层上贴覆CPP保护膜,制作完成。
本发明的范围,并不限于上述技术特征的特定组合而成的技术方案,同时也应涵盖由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本申请中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案等。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:本发明提供了一种调光膜,先在所述HC加硬层或所述IM加硬层上通过磁控溅射工艺镀设一层硅镀层打底作为保护层,促使ITO镀层和基材层能够紧密贴合,ITO镀层通过镀设有硅镀层的IM加硬层或HC加硬层间接镀在基材层上,降低脱落现象,同时提高光学效果,并增强了抗划伤能力。
附图说明
附图1为本发明截面构造示意图;
其中:10、基材层;11、HC加硬层;12、IM加硬层;13、硅镀层;14、ITO镀层;15、CPP保护膜;16、PET保护膜。
具体实施方式
如附图1所示,一种调光膜,包括:
基材层10,基材层10可以是聚对苯二甲酸乙二酯薄膜(PET膜)、聚酰亚胺薄膜(PI膜)、聚碳酸酯薄膜(PC膜)、聚甲基丙烯酸甲酯薄膜(PMMA膜)、聚脂塑料薄膜、环氧塑料薄膜中的一种,优选是基材层10为聚对苯二甲酸乙二酯薄膜,厚度125um,透光率在90%以上;
HC加硬层11,通过涂布工艺涂设在基材层10的一面上,HC加硬层11的厚度为1.5um;
IM加硬层12,通过涂布工艺涂设在基材层10的另一面上,IM加硬层12的厚度为750nm;
HC加硬层11上贴覆有PET保护膜16,PET保护膜16厚度为50um;
硅镀层13通过磁控溅射工艺镀在IM加硬层12上,厚度为8nm;
ITO镀层14通过磁控溅射工艺镀在硅镀层13上,厚度为50nm;
ITO镀层14上贴覆有CPP保护膜15,厚度为40um;
在将调光膜加工产品时,需要将PET保护膜16及CPP保护膜15撕除。
制备方法,包括以下步骤:
步骤一:在所述基材层10的一面通过涂布工艺涂设HC加硬层11;
步骤二:在所述基材层10的另一面通过涂布工艺涂设IM加硬层12;
步骤三:在所述HC加硬层11上贴覆PET保护膜16;
步骤四:在所述IM加硬层12上通过磁控溅射工艺镀设所述硅镀层13;
步骤五:在所述硅镀层13上通过磁控溅射工艺镀设所述ITO镀层14;
步骤六:在所述ITO镀层14上贴覆CPP保护膜15,制作完成。
下表中示出了采用不同厚度镀硅层打底的调光膜性能对比测试。
得出,本实施例中的调光膜,当打底硅层厚度在5nm以下时,实验结果仍存在脱落现象,当打底硅层厚度在5-10nm时,实验结果不脱落,当打底硅层厚度在10nm以上时,实验结果不脱落,但光学效果差,因此当打底硅层厚度在5-10nm时,调光膜具有最佳效果。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。
Claims (9)
1.一种调光膜,包括基材层(10)、起导电功能的ITO镀层(14),其特征在于:所述基材层(10)的一面通过涂布工艺涂设有HC加硬层(11),所述基材层(10)的另一面通过涂布工艺涂设有IM加硬层(12),在所述HC加硬层(11)或者所述IM加硬层(12)上通过磁控溅射工艺镀有硅镀层(13),所述ITO镀层(14)通过磁控溅射工艺镀在所述硅镀层(13)上。
2.根据权利要求1所述的一种调光膜,其特征在于:所述硅镀层(13)的厚度为5-10nm。
3.根据权利要求2所述的一种调光膜,其特征在于:所述ITO镀层(14)的厚度为40-60nm。
4.根据权利要求3所述的一种调光膜,其特征在于:所述HC加硬层(11)的厚度为1-2um,所述IM加硬层(12)的厚度为700-800nm。
5.根据权利要求4所述的一种调光膜,其特征在于:所述硅镀层(13)覆盖于所述IM加硬层(12)上,所述HC加硬层(11)上贴覆有PET保护膜(16),厚度为30-125um。
6.根据权利要求5所述的一种调光膜,其特征在于:所述ITO镀层(13)上贴覆有CPP保护膜(15),厚度为40-125um。
7.根据权利要求1所述的一种调光膜,其特征在于:所述基材层(10)为聚对苯二甲酸乙二酯薄膜、聚酰亚胺薄膜、聚碳酸酯薄膜、聚甲基丙烯酸甲酯薄膜、聚脂塑料薄膜、环氧塑料薄膜中的一种。
8.根据权利要求1所述的一种调光膜,其特征在于:所述基材层(10)为聚对苯二甲酸乙二酯薄膜, 厚度为50um、100um、125um或188um,透光率在90%以上。
9.一种制备权利要求6所述一种调光膜的方法,其特征在于:包括以下步骤:
步骤一:在所述基材层(10)的一面通过涂布工艺涂设HC加硬层(11);
步骤二:在所述基材层(10)的另一面通过涂布工艺涂设IM加硬层(12);
步骤三:在所述HC加硬层(11)上贴覆PET保护膜(16);
步骤四:在所述IM加硬层(12)上通过磁控溅射工艺镀设所述硅镀层(13);
步骤五:在所述硅镀层(13)上通过磁控溅射工艺镀设所述ITO镀层(14);
步骤六:在所述ITO镀层(14)上贴覆CPP保护膜(15),制作完成。
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