CN111370428A - 显示基板及其制作方法、显示装置 - Google Patents

显示基板及其制作方法、显示装置 Download PDF

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CN111370428A
CN111370428A CN202010195565.5A CN202010195565A CN111370428A CN 111370428 A CN111370428 A CN 111370428A CN 202010195565 A CN202010195565 A CN 202010195565A CN 111370428 A CN111370428 A CN 111370428A
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conductive
protection structure
substrate
pattern
conductive pattern
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CN111370428B (zh
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刘军
闫梁臣
周斌
张扬
苏同上
李伟
倪柳松
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明提供了一种显示基板及其制作方法、显示装置，属于显示技术领域。其中，显示基板，包括：位于衬底基板上的第一导电图形，第一导电图形的预设区域的边缘设置有包围预设区域的环状的导电保护结构，导电保护结构采用防干法刻蚀材料制成；覆盖第一导电图形的绝缘层，绝缘层包括对应预设区域的过孔，过孔在衬底基板上的正投影被导电保护结构在衬底基板上的正投影包围，且过孔在衬底基板上的正投影与导电保护结构在衬底基板上的正投影部分重叠；位于绝缘层远离第一导电图形一侧的第二导电图形，第二导电图形通过过孔与第一导电图形电连接。本发明的技术方案能够保证显示基板的良率。

Description

显示基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域，特别是指一种显示基板及其制作方法、显示装置。
背景技术
现有显示基板的制作工艺中，在连接异层的金属图形时，会对异层的金属图形之间的绝缘层进行刻蚀形成过孔，在刻蚀厚度较大的绝缘层(厚度550nm以上)时，刻蚀的时间比较长，会产生微沟槽效应(microtrenching effect，即刻蚀过程中过孔边缘部分的刻蚀深度大于中心部分的刻蚀深度的现象)，这样过孔边缘处的下层金属图形也会被刻蚀损伤，影响显示基板的良率。
发明内容
本发明要解决的技术问题是提供一种显示基板及其制作方法、显示装置，能够保证显示基板的良率。
为解决上述技术问题，本发明的实施例提供技术方案如下：
一方面，提供一种显示基板，包括：
位于衬底基板上的第一导电图形，所述第一导电图形的预设区域的边缘设置有包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
覆盖所述第一导电图形的绝缘层，所述绝缘层包括对应所述预设区域的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
位于所述绝缘层远离所述第一导电图形一侧的第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接。
一些实施例中，所述第一导电图形采用Mo或Mo的合金，所述导电保护结构采用Cu、ITO或IGZO。
一些实施例中，所述第一导电图形还包括包围所述预设区域的环状的凸起，所述导电保护结构覆盖所述凸起。
一些实施例中，所述凸起的高度为0.05～0.10um，所述导电保护结构的厚度为0.015～0.02um。
一些实施例中，所述导电保护结构在所述衬底基板上的正投影的外轮廓的直径为D，所述凸起在所述衬底基板上的正投影的外轮廓的直径为d，D比d大2～3um。
一些实施例中，所述第一导电图形为遮光金属层的图形，所述第二导电图形为源漏金属层的图形。
一些实施例中，所述显示基板具体包括：
位于所述衬底基板上的所述遮光金属层的图形；
位于所述遮光金属层的图形远离所述衬底基板一侧的所述导电保护结构；
位于所述遮光金属层的图形和所述导电保护结构远离所述衬底基板一侧的缓冲层；
位于所述缓冲层远离所述衬底基板一侧的有源层；
位于所述有源层远离所述衬底基板一侧的栅绝缘层；
位于所述栅绝缘层远离所述衬底基板一侧的栅金属层的图形；
位于所述栅金属层的图形远离所述衬底基板一侧的层间绝缘层，所述缓冲层与所述层间绝缘层组成所述绝缘层；
位于所述层间绝缘层远离所述衬底基板一侧的源漏金属层的图形，所述源漏金属层的图形通过贯穿所述缓冲层和所述层间绝缘层的过孔与所述遮光金属层的图形电连接；
位于所述源漏金属层的图形远离所述衬底基板一侧的钝化层。
本发明的实施例还提供了一种显示装置，包括如上所述的显示基板。
本发明的实施例还提供了一种显示基板的制作方法，包括：
在衬底基板上形成第一导电图形；
在所述第一导电图形的预设区域的边缘形成包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
形成覆盖所述第一导电图形的绝缘层；
对所述绝缘层进行干法刻蚀，形成贯穿所述绝缘层的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
在所述绝缘层上形成第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接。
一些实施例中，所述在衬底基板上形成第一导电图形包括：
在所述第一导电图形朝向所述绝缘层的一侧表面形成包围所述预设区域的环状的凸起；
形成所述导电保护结构包括：
形成覆盖所述凸起的所述导电保护结构。
本发明的实施例具有以下有益效果：
上述方案中，在第一导电图形对应过孔的预设区域的边缘形成环状的导电保护结构，导电保护结构采用防干法刻蚀材料制成，这样在对覆盖第一导电图形的绝缘层进行干法刻蚀形成暴露第一导电图形的过孔时，导电保护结构能够对过孔边缘处的第一导电图形进行保护，避免干法刻蚀对第一导电图形造成损伤，从而保证显示基板的良率。
附图说明
图1-图6为本发明实施例制作显示基板的流程示意图。
附图标记
1 衬底基板
2 遮光金属层
3 光刻胶
4 导电保护结构
5 缓冲层
6 有源层
7 栅绝缘层
8 栅极
9 层间绝缘层
10 源极
11 漏极
12 钝化层
具体实施方式
为使本发明的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
现有显示基板的制作工艺中，为了增大存储电容，会将遮光金属层图形与薄膜晶体管的漏极连接，遮光金属层和薄膜晶体管的漏极之间间隔有缓冲层和层间绝缘层，在对缓冲层和层间绝缘层进行刻蚀形成连接遮光金属层和漏极的过孔时，由于缓冲层和层间绝缘层的厚度比较大，刻蚀的时间比较长，会在过孔处产生微沟槽效应，并且也会损伤到过孔边缘处的遮光金属层，导致遮光金属层与漏极出现接触不良，影响显示基板的良率。
本发明的实施例提供一种显示基板及其制作方法、显示装置，能够保证显示基板的良率。
本发明的实施例提供一种显示基板，包括：
位于衬底基板上的第一导电图形，所述第一导电图形的预设区域的边缘设置有包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
覆盖所述第一导电图形的绝缘层，所述绝缘层包括对应所述预设区域的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
位于所述绝缘层远离所述第一导电图形一侧的第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接。
本实施例中，在第一导电图形对应过孔的预设区域的边缘形成环状的导电保护结构，导电保护结构采用防干法刻蚀材料制成，这样在对覆盖第一导电图形的绝缘层进行干法刻蚀形成暴露第一导电图形的过孔时，导电保护结构能够对过孔边缘处的第一导电图形进行保护，避免干法刻蚀对第一导电图形造成损伤，从而保证显示基板的良率。
其中，环状的导电保护结构与绝缘层的过孔的形状匹配，能够覆盖过孔边缘处的第一导电图形，在过孔的横截面为圆形时，导电保护结构为圆形环状；在过孔的横截面为方形时，导电保护结构为方形环状；以此类推。
一些实施例中，所述第一导电图形采用Mo或Mo的合金，Mo或Mo的合金会被干法刻蚀刻蚀掉，导电保护结构可以采用Cu、ITO或IGZO，这些材料不会被干法刻蚀刻蚀掉。在第一导电图形采用Mo或Mo的合金时，Mo或Mo的合金会被干法刻蚀刻蚀掉，这样在通过干法刻蚀对绝缘层进行刻蚀形成过孔时，容易对第一导电图形造成损伤，在第一导电图形上形成导电保护结构后，由于导电保护结构不会被干法刻蚀刻蚀掉，能够避免干法刻蚀中的离子下滑刻蚀第一导电图形，进而避免刻蚀中的向内钻刻蚀，避免产生微沟槽效应，避免干法刻蚀对第一导电图形造成损伤，从而保证显示基板的良率。
一些实施例中，所述第一导电图形还包括包围所述预设区域的环状的凸起，所述导电保护结构覆盖所述凸起，这样可以使得导电保护结构与所述凸起并联，能够降低第一导电图形在过孔处的电阻。
一些实施例中，所述凸起的高度可以为0.05～0.10um，所述导电保护结构的厚度可以为0.015～0.02um，当然凸起的高度并不局限为上述取值，导电保护结构的厚度也不局限为上述取值，还可以采用其他取值。
一些实施例中，所述导电保护结构在所述衬底基板上的正投影的外轮廓的直径为D，所述凸起在所述衬底基板上的正投影的外轮廓的直径为d，D比d大2～3um，这样可以保证导电保护结构能够完全覆盖凸起，保护凸起不会被干法刻蚀损伤。
其中，第一导电图形和第二导电图形可以为显示基板中任两个异层设置的导电图形。一些实施例中，所述第一导电图形可以为遮光金属层的图形，所述第二导电图形可以为源漏金属层的图形。
一些实施例中，如图6所示，所述显示基板具体包括：
位于所述衬底基板1上的所述遮光金属层2的图形；
位于所述遮光金属层2的图形远离所述衬底基板1一侧的所述导电保护结构4；
位于所述遮光金属层2的图形和所述导电保护结构4远离所述衬底基板1一侧的缓冲层5；
位于所述缓冲层5远离所述衬底基板一侧的有源层6；
位于所述有源层6远离所述衬底基板1一侧的栅绝缘层7；
位于所述栅绝缘层7远离所述衬底基板1一侧的栅金属层的图形，栅金属层的图形包括栅极8；
位于所述栅金属层的图形远离所述衬底基板1一侧的层间绝缘层9，所述缓冲层5与所述层间绝缘层9组成所述绝缘层；
位于所述层间绝缘层9远离所述衬底基板1一侧的源漏金属层的图形，源漏金属层的图形包括源极10和漏极11，所述源漏金属层的图形通过贯穿所述缓冲层5和所述层间绝缘层9的过孔与所述遮光金属层2的图形电连接；
位于所述源漏金属层的图形远离所述衬底基板1一侧的钝化层12。
其中，遮光金属层2的可以采用Mo或Mo的合金，导电保护结构4可以采用ITO。
本发明的实施例还提供了一种显示装置，包括如上所述的显示基板。
该显示装置包括但不限于：射频单元、网络模块、音频输出单元、输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。本领域技术人员可以理解，上述显示装置的结构并不构成对显示装置的限定，显示装置可以包括上述更多或更少的部件，或者组合某些部件，或者不同的部件布置。在本发明实施例中，显示装置包括但不限于显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板。
本发明的实施例还提供了一种显示基板的制作方法，包括：
在衬底基板上形成第一导电图形；
在所述第一导电图形的预设区域的边缘形成包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
形成覆盖所述第一导电图形的绝缘层；
对所述绝缘层进行干法刻蚀，形成贯穿所述绝缘层的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
在所述绝缘层上形成第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接；
本实施例中，在第一导电图形对应过孔的预设区域的边缘形成环状的导电保护结构，导电保护结构采用防干法刻蚀材料制成，这样在对覆盖第一导电图形的绝缘层进行干法刻蚀形成暴露第一导电图形的过孔时，导电保护结构能够对过孔边缘处的第一导电图形进行保护，避免干法刻蚀对第一导电图形造成损伤，从而保证显示基板的良率。
一些实施例中，所述在衬底基板上形成第一导电图形包括：
在所述第一导电图形朝向所述绝缘层的一侧表面形成包围所述预设区域的环状的凸起；
形成所述导电保护结构包括：
形成覆盖所述凸起的所述导电保护结构。
所述导电保护结构覆盖所述凸起，这样可以使得导电保护结构与所述凸起并联，能够降低第一导电图形在过孔处的电阻。
一具体实施例中，以所述第一导电图形为遮光金属层的图形，所述第二导电图形为源漏金属层的图形为例，显示基板的制作方法包括以下步骤：
步骤1、如图1所示，在衬底基板1上沉积一层遮光金属层2，衬底基板1可以采用石英基板或玻璃基板；遮光金属层2可以为钼或钼铌合金等，厚度为0.20～0.25um；
在遮光金属层2上形成光刻胶3的图形，具体地，可以通过半色调掩膜板对光刻胶进行曝光，形成光刻胶完全保留区域、光刻胶部分保留区域和光刻胶去除区域，光刻胶完全保留区域呈环状，包围待形成过孔的预设区域，厚度为2.2um左右，环状结构的直径为3～4um；光刻胶部分保留区域对应遮光金属层2的图形，厚度可以为1.5um左右；
步骤2、如图2所示，对光刻胶去除区域的遮光金属层2进行刻蚀，具体地，可以用混酸(硝酸醋酸磷酸混合)对遮光金属层2进行刻蚀，形成遮光金属层2的图形；
之后，不剥离光刻胶3，使用氧气对光刻胶进行灰化，灰化厚度为1.5um，去除光刻胶部分保留区域的光刻胶，在遮光金属层2的图形上形成环形的光刻胶图形，之后可以使用CF4和O2对遮光金属层2进行干法刻蚀，刻蚀目标厚度为0.05～0.10um，刻蚀完成后对光刻胶3进行剥离即形成如图2所示的结构，在待形成过孔的预设区域边缘形成一遮光金属圆环，圆环的厚度可以为0.05um；
步骤3、如图3所示，可以在衬底基板1上沉积一层氧化铟锡ITO层，厚度为0.015～0.02um，通过构图工艺形成导电保护结构4，具体地，构图工艺中可以利用混酸(硫酸磷酸醋酸)或草酸对ITO进行刻蚀并剥离，形成圆环状ITO图形，ITO圆环的外径较遮光金属圆环的外径大2～3um；
步骤4、如图4所示，沉积一层缓冲层5，缓冲层5可以采用氧化硅，厚度为0.3～0.5um；之后形成半导体材料层，并对半导体材料层进行构图形成有源层6，有源层6可以采用氧化铟锡(IGZO)，厚度为0.05～0.08um；之后可以形成一层栅绝缘层7，栅绝缘层7可以采用氧化硅，厚度为0.1um～0.2um；形成一层栅金属层，对栅金属层进行构图形成栅极8及栅极走线等图形，栅金属层可以采用铜等金属，厚度为0.6～0.8um，可以通过湿法刻蚀形成栅极8及栅极走线等图形，示例性的，可用H2O2药液对铜进行湿法刻蚀；在形成栅金属层的图形后，可以以栅金属层的图形为掩膜对栅绝缘层7进行干法刻蚀，形成栅绝缘层7的图形，其中，可以采用高CF4+低O2的混合气体进行干法刻蚀，CF4流量可为2000～2500sccm，O2流量可为1000～1500sccm，形成栅绝缘层7的图形后，可以对暴露出的有源层6的部分进行导体化处理，导体化处理可用氨气(NH3)或者氦气(He)进行，形成有源层6的源极接触区和漏极接触区；
步骤5、如图5所示，沉积一层层间绝缘层9，层间绝缘层9可为氧化硅，厚度为0.55～0.65um，之后对层间绝缘层9和缓冲层5进行干法刻蚀，形成接触孔CNT孔的图形，CNT孔在遮光金属层2上的正投影落入导电保护结构4限定的区域内，且接触孔CNT在遮光金属层2上的正投影与导电保护结构4部分重叠，重叠部分的宽度为1～2um，形成的CNT孔用于连接漏极和遮光金属层2。示例性的，可采用适当CF4+O2混合气体对层间绝缘层9和缓冲层5进行干法刻蚀，CF4流量可为1000～1800sccm，O2流量可为1200～2000sccm，在进行干法刻蚀时由于导电保护结构4的存在，即使刻蚀时离子下滑，其刻蚀的为导电保护结构4，导电保护结构4采用ITO耐刻蚀物无法被刻蚀，避免微沟槽效应的发生，而且加上过孔处遮光金属圆环和ITO圆环的存在，深孔干刻对缓冲层5的钻刻亦能被凸起的ITO耐刻蚀物所阻挡；
步骤6、如图6所示，形成一层源漏金属层，源漏金属层可以采用铜，厚度为0.5～0.6um，对源漏金属层进行构图，形成源极11、漏极12以及数据线等源漏金属层的图形，由于CNT孔处圆环状导电保护结构4的存在，漏极12在CNT孔处与遮光金属层2搭接良好，能够避免接触不良产生；之后沉积一层钝化层(PVX)，可采用氧化硅，厚度为0.5～0.6um。
经过上述步骤即可得到如图6所示的显示基板。本实施例针对CNT孔边缘微沟槽效应造成的刻蚀不均利用耐刻蚀物ITO于CNT孔边缘处形成相应圆环状的导电保护结构，避免深孔刻蚀下边缘刻蚀深度更深导致的漏极和遮光金属层搭接不良；另外，在CNT孔圆环处形成相应的遮光金属凸起以及相应ITO导电保护结构，避免深孔刻蚀时因过刻导致的对绝缘膜层的钻刻蚀造成底切，能够提高显示基板的良率。
在本发明各方法实施例中，所述各步骤的序号并不能用于限定各步骤的先后顺序，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，对各步骤的先后变化也在本发明的保护范围之内。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.一种显示基板，其特征在于，包括：
位于衬底基板上的第一导电图形，所述第一导电图形的预设区域的边缘设置有包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
覆盖所述第一导电图形的绝缘层，所述绝缘层包括对应所述预设区域的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
位于所述绝缘层远离所述第一导电图形一侧的第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接。
2.根据权利要求1所述的显示基板，其特征在于，所述第一导电图形采用Mo或Mo的合金，所述导电保护结构采用Cu、ITO或IGZO。
3.根据权利要求1所述的显示基板，其特征在于，所述第一导电图形还包括包围所述预设区域的环状的凸起，所述导电保护结构覆盖所述凸起。
4.根据权利要求3所述的显示基板，其特征在于，所述凸起的高度为0.05～0.10um，所述导电保护结构的厚度为0.015～0.02um。
5.根据权利要求3所述的显示基板，其特征在于，所述导电保护结构在所述衬底基板上的正投影的外轮廓的直径为D，所述凸起在所述衬底基板上的正投影的外轮廓的直径为d，D比d大2～3um。
6.根据权利要求1-5中任一项所述的显示基板，其特征在于，所述第一导电图形为遮光金属层的图形，所述第二导电图形为源漏金属层的图形。
7.根据权利要求6所述的显示基板，其特征在于，所述显示基板具体包括：
位于所述衬底基板上的所述遮光金属层的图形；
位于所述遮光金属层的图形远离所述衬底基板一侧的所述导电保护结构；
位于所述遮光金属层的图形和所述导电保护结构远离所述衬底基板一侧的缓冲层；
位于所述缓冲层远离所述衬底基板一侧的有源层；
位于所述有源层远离所述衬底基板一侧的栅绝缘层；
位于所述栅绝缘层远离所述衬底基板一侧的栅金属层的图形；
位于所述栅金属层的图形远离所述衬底基板一侧的层间绝缘层，所述缓冲层与所述层间绝缘层组成所述绝缘层；
位于所述层间绝缘层远离所述衬底基板一侧的源漏金属层的图形，所述源漏金属层的图形通过贯穿所述缓冲层和所述层间绝缘层的过孔与所述遮光金属层的图形电连接；
位于所述源漏金属层的图形远离所述衬底基板一侧的钝化层。
8.一种显示装置，其特征在于，包括如权利要求1-7中任一项所述的显示基板。
9.一种显示基板的制作方法，其特征在于，包括：
在衬底基板上形成第一导电图形；
在所述第一导电图形的预设区域的边缘形成包围所述预设区域的环状的导电保护结构，所述导电保护结构采用防干法刻蚀材料制成；
形成覆盖所述第一导电图形的绝缘层；
对所述绝缘层进行干法刻蚀，形成贯穿所述绝缘层的过孔，所述过孔在所述衬底基板上的正投影被所述导电保护结构在所述衬底基板上的正投影包围，且所述过孔在所述衬底基板上的正投影与所述导电保护结构在所述衬底基板上的正投影部分重叠；
在所述绝缘层上形成第二导电图形，所述第二导电图形通过所述过孔与所述第一导电图形电连接。
10.根据权利要求9所述的显示基板的制作方法，其特征在于，所述在衬底基板上形成第一导电图形包括：
在所述第一导电图形朝向所述绝缘层的一侧表面形成包围所述预设区域的环状的凸起；
形成所述导电保护结构包括：
形成覆盖所述凸起的所述导电保护结构。
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