CN111302788B - 一种具有高Qf值低介电常数的陶瓷材料及其制备方法 - Google Patents

一种具有高Qf值低介电常数的陶瓷材料及其制备方法 Download PDF

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CN111302788B
CN111302788B CN202010242928.6A CN202010242928A CN111302788B CN 111302788 B CN111302788 B CN 111302788B CN 202010242928 A CN202010242928 A CN 202010242928A CN 111302788 B CN111302788 B CN 111302788B
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dielectric constant
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张军志
杨和成
陈贤旺
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XIAMEN SONGYUAN ELECTRONICS CO Ltd
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Abstract

本发明提供一种具有高Qf值低介电常数的陶瓷材料及其制备方法,涉及信息功能材料领域。该陶瓷材料由主晶相及改性添加物组成。主晶相包括MgTiO3、以及掺杂的Ca的氧化物或酸盐以及Si的氧化物或酸盐。改性添加物选自BaCO3、CaCO3、MnCO3、MnO2、Zn3(B2O6)、La2O3、Co3O4、Al2O3中的一种或几种。该陶瓷材料是一种无铅环保型材料。在采用固相法将Mg(OH)2和TiO2合成MgTiO3时,同时掺杂入Ca的氧化物或酸盐以及Si的氧化物或酸盐,以此作为主晶相,制备出平均粒径为500~700nm的陶瓷材料粉体。利用该粉体制成的电子陶瓷器件可在1260~1300℃的温度范围内成瓷,其介电常数ε介于10~14之间,介电常数温度系数τf(‑40~85℃):±10ppm/℃,品质因数Qf≥100000GHz。该材料均匀性好,满足毫米波器件的制作要求。

Description

一种具有高Qf值低介电常数的陶瓷材料及其制备方法
技术领域
本发明属于信息功能材料领域,具体涉及一种具有高Qf值低介电常数的陶瓷材料及其制备方法。
背景技术
微波介质陶瓷材料是近年来迅速发展起来的一类新型功能陶瓷材料。它具有低介电损耗、高介电常数ε及介电常数温度系数τf稳定等特点。它是介质谐振器、滤波器、振荡器、双工器、天线、介质基板等在内的新型微波电路和器件的核心基础材料,在现代微波通信和卫星导航系统和设备中有广泛的应用。近年来,由于微波技术设备向小型化、集成化、低功耗,尤其是向民用的大批量、低价格化方向迅速发展,目前已经开发出一大批适用于各个微波频段的微波介质陶瓷材料。为克服不同微波频段应用带来的众多问题,亟需开发具备高品质因数Qf、中低介电常数(ε<20)和介电常数温度系数τf近零可调的微波介质材料体系。低介电损耗即高的品质因数Qf有利于降低器件的功耗和提高器件工作频率的可选择性,较低的介电常数ε能减小介质陶瓷与金属电极之间的交互耦合损耗,而近零的介电常数温度系数τf有助于提高器件工作的稳定性。
发明内容
本发明的目的是提供一种具有高Qf值低介电常数的陶瓷材料及其制备方法,其应用于制作微波器件时,具有高品质因数Qf、低介电常数(ε<15)、介电常数温度系数τf近零可调以及高强度的特点。
为实现本发明目的,本发明采用如下技术方案。
本发明提供一种具有高Qf值低介电常数的陶瓷材料,由主晶相及改性添加物组成;所述主晶相包括MgTiO3、以及掺杂于所述MgTiO3中的Ca的氧化物或酸盐和Si的氧化物或酸盐;所述改性添加物选自BaCO3、CaCO3、MnCO3、MnO2、Zn3(B2O6)、La2O3、Co3O4和Al2O3中的一种或几种。
优选地,所述主晶相和所述改性添加物的质量分数之比为(90~95%):(5~10%)。
优选地,所述Ca的氧化物或酸盐以及所述Si的氧化物或酸盐的总和占所述主晶相的质量分数为0.001~0.015%。
优选地,所述的陶瓷材料烧结后,介电常数ε介于10~14,介电常数温度系数τf(-40~85℃):±10ppm/℃,品质因数Qf值≥100000GHz。
本发明还提供一种如上所述的陶瓷材料的制备方法,包括以下步骤:
S1,将氢氧化镁、二氧化钛、碳酸钙以及二氧化硅混合,加入水,球磨,干燥,再在空气气氛中1150℃~1250℃的条件下煅烧2~4小时,得到所述主晶相;
S2,将所述主晶相及所述改性添加物混合,加入水,混合并砂磨;然后干燥,得到陶瓷材料粉末。
优选地,上述的制备方法还包括以下步骤:
S3,将步骤S2得到的陶瓷材料粉末加入粘合剂、增塑剂、分散剂,球磨,获得浆料;
S4,将上述浆料干燥,得到粉料;
S5,将粉料压制成型,制成生坯器件;
S6,排胶:将生坯器件置于500℃~650℃的温度中保温24小时以排除有机物;
S7,烧结:将排胶后的坯体在空气气氛中,1260~1300℃的条件下保温3~5h;
S8,退火:在950℃~1050℃的条件下保温2~3小时,得到成型后的陶瓷材料。
优选地,步骤S1中,氢氧化镁、二氧化钛、碳酸钙和二氧化硅的质量比为(55~62):(75~85):(0.1~0.5):(0.1~1.5)。
优选地,步骤S1中,按混合后得到的固体混合物与水的质量比为1:(1.0~2.0)的比例加入水。
优选地,步骤S2中,按所述主晶相和所述改性添加物混合后的物料与水的质量比为1:(0.6~1.0)的比例加入水。
本发明的陶瓷材料,适用于制作毫米波器件。
本发明的有益效果是:钛酸镁(又称偏钛酸镁)是近年来在微波陶瓷领域应用广泛的介电材料,其介电常数ε介于16~22。制备MgO-TiO2系陶瓷材料会产生三种不同形式的化合物:正钛酸镁(Mg2TiO4)、偏钛酸镁(钛酸镁)和二钛酸镁(MgTi2O5)。正钛酸镁和二钛酸镁会降低陶瓷的微波介电性能。SiO2其介电常数很低,只有4左右,经SiO2改性后的钛酸镁,其介电常数降到10这个水平,并且有着高的Qf值及良好的介电常数温度系数τf。
本发明的陶瓷材料是一种无铅环保型材料,在以固相法合成主晶相的过程中,采用以CaCO3、SiO2预先掺杂,以Mg(OH)2和TiO2合成MgTiO3作为主晶相材料。经过合理设计配方,优化合成工艺,制备出粉体平均粒径为500~700nm,利用该粉体制成的电子陶瓷器件可在1260~1300℃的温度范围内成瓷,其介电常数ε介于10~14之间,介电常数温度系数τf(-40~85℃):±10ppm/℃,品质因数Qf≥100000GHz。该材料均匀性好,满足毫米波器件制作要求。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
本发明提供一种具有高Qf值低介电常数的陶瓷材料,由主晶相及改性添加物组成。主晶相包括MgTiO3、以及掺杂于MgTiO3中的Ca的氧化物或酸盐和Si的氧化物或酸盐。改性添加物选自BaCO3、CaCO3、MnCO3、MnO2、Zn3(B2O6)、La2O3、Co3O4和Al2O3中的一种或几种。
钛酸镁MgTiO3(又称偏钛酸镁)是近年来在微波陶瓷领域应用广泛的介电材料,其介电常数ε介于16~22。SiO2其介电常数很低,只有4左右,经SiO2改性后的钛酸镁,其介电常数降到10这个水平,并且有着高的Qf值及良好的介电常数温度系数τf,适用于制作毫米波器件。
掺杂的Ca的氧化物或酸盐和Si的氧化物或酸盐的总和占主晶相的质量分数为0.001~0.015%。
主晶相和改性添加物的质量分数之比为(90~95%):(5~10%)。在满足此关系式的基础上,改性添加物中每个组分占陶瓷材料的优选添加质量比为:BaCO3为0~5%,CaCO3为0~5%,MnCO3为0~0.3%,MnO2为0~0.3%,Zn3(B2O6)为0~0.3%,La2O3为0~0.3%,Co3O4为0~0.3%,Al2O3为0~0.5%。
陶瓷材料烧结后,介电常数ε介于10~14,介电常数温度系数τf(-40~85℃):±10ppm/℃,品质因数Qf值≥100000GHz,该材料均匀性好,适用于制作毫米波器件。
本发明还提供上述陶瓷材料的制备方法,包括以下步骤:
S1,制备主晶相粉末。将氢氧化镁、二氧化钛、碳酸钙以及二氧化硅混合。各原料质量比例为,氢氧化镁:二氧化钛:碳酸钙:二氧化硅=(55~62):(75~85):(0.1~0.5):(0.1~1.5),优选氢氧化镁和二氧化钛按摩尔比1:1配料。再以质量计,按(氢氧化镁+二氧化钛+碳酸钙+二氧化硅):去离子水=1:(1.0~2.0)的优选比例加入去离子水。投入球磨机中球磨。用喷雾干燥塔或其他方法进行干燥。再在空气炉中1150℃~1250℃的条件下煅烧2~4小时,得到主晶相。
S2,制备成品粉末。将主晶相及改性添加物混合。以质量计,按(主晶相+改性添加物):去离子水=1:(0.6~1.0)的优选比例加入去离子水。混合并砂磨,要求物料混合均匀,使砂磨后的粉体平均颗粒尺寸达500~700nm。然后用喷雾干燥塔或其他方法进行干燥,得到本发明的陶瓷材料粉末。
本发明的粉末状的陶瓷材料通过以下步骤制作成型。
S3,将步骤S2得到的陶瓷材料粉末加入粘合剂、增塑剂、分散剂,球磨,获得浆料。其中,粘合剂可选用聚乙烯醇,增塑剂可选用聚乙二醇,分散剂可选用羧酸铵盐类。
S4,将上述浆料进行离心喷雾干燥,得到获得流动性良好的粉料。
S5,将粉料压制成型,制成生坯器件。
S6,排胶:将生坯器件置于500℃~650℃的温度中保温24小时以排除有机物。整个排胶过程的升温速度要求小于10℃/小时。
S7,烧结:将排胶后的坯体在空气气氛中,以150℃~200℃/小时的升温速度升温到1260~1300℃,保温3~5h。烧结能使陶瓷坯体中的粉粒晶界移动,气孔逐步排除,坯体收缩成为具有一定强度的致密陶瓷体。制备MgO-TiO2系陶瓷材料会产生三种不同形式的化合物:正钛酸镁(Mg2TiO4)、偏钛酸镁(MgTiO3)和二钛酸镁(MgTi2O5)。采用较低的温度1260~1300℃进行烧结,能降低MgTiO3转化为Mg2TiO4和MgTi2O5的比例。
S8,退火:在炉温950℃~1050℃的条件下保温2~3小时,得到本发明成型后的陶瓷材料。退火可以减小坯体内部应力,细化晶粒,弥合微裂纹,改善材料的组织结构,提高陶瓷的力学性能。
实施例
本实施例提供一种具有高Qf值低介电常数的陶瓷材料,通过以下步骤制备,并进行微波性能测试。
S1,制备主晶相粉末。将氢氧化镁、二氧化钛、碳酸钙以及二氧化硅按表1的质量比例混合,得到6组样品,每组样品各做3份。再按(氢氧化镁+二氧化钛+碳酸钙+二氧化硅):去离子水=1:1.5的质量比例加入去离子水。投入球磨机中球磨。用喷雾干燥塔进行干燥。再在空气炉中1200℃的条件下煅烧3小时,得到主晶相。
表1 MgTiO3实施例配方
Figure BDA0002433149810000051
S2,制备成品粉末。将主晶相及改性添加物混合,18个样品的混合质量比例如表2。再按(主晶相+改性添加物):去离子水=1:0.8的质量比例加入去离子水。混合并砂磨,砂磨后的粉体平均颗粒尺寸达500~700nm。然后用喷雾干燥塔进行干燥,得到本发明的陶瓷材料粉末。
表2成品粉末配方
Figure BDA0002433149810000061
S3,将步骤S2得到的陶瓷材料粉末,加入粘合剂聚乙烯醇、增塑剂聚乙二醇、分散剂羧酸铵盐,球磨,获得浆料。
S4,将上述浆料进行离心喷雾干燥,得到获得流动性良好的粉料。
S5,将粉料压制成型,制成密度2.3g/cm3,直径为15,厚度为10mm的圆柱型生坯器件。
S6,排胶:将生坯器件,以8℃/小时的升温速度,升温至600℃,保温24小时以排除有机物。
S7,烧结:将排胶后的坯体在空气气氛中,以150℃/小时的升温速度升温到1260~1300℃,保温3h。烧结能使陶瓷坯体中的粉粒晶界移动,气孔逐步排除,坯体收缩成为具有一定强度的致密陶瓷体。
S8,退火:在炉温1000℃的条件下保温2.5小时,得到本发明成型后的陶瓷材料。退火可以减小坯体内部应力,细化晶粒,弥合微裂纹,改善材料的组织结构,提高陶瓷的力学性能。
S9,器件测试。采用安捷伦网分仪,在频率9~11GHz下进行微波性能测试。18个样品的测试结果如表3。
表3烧结成型的陶瓷材料微波性能测试
Figure BDA0002433149810000071
经过上述过程制成的陶瓷材料,可以在1260℃~1300℃的温度范围内。通过调整材料合成的配比可形成介电常数ε介于10~14,介电常数温度系数τf(-40~85℃):±10ppm/℃,品质因数Qf值≥100000GHz,连续可调系列陶瓷材料,可满足毫米波器件的应用要求。
以上所描述的实施例仅是本发明的部分实施例,而不是全部的实施例,本发明的实施例的详细描述并非旨在限制本发明要求保护的范围,而仅仅表示本发明的选定实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。

Claims (5)

1.一种具有高Qf值低介电常数的陶瓷材料,由主晶相及改性添加物组成;其特征在于:所述主晶相包括MgTiO3、以及掺杂于所述MgTiO3中的Ca的氧化物或酸盐和Si的氧化物或酸盐;所述改性添加物选自BaCO3、CaCO3、MnCO3、MnO2、Zn3(B2O6)、La2O3、Co3O4和Al2O3中的一种或几种;所述主晶相和所述改性添加物的质量分数之比为(90~95%):(5~10%);所述Ca的氧化物或酸盐以及所述Si的氧化物或酸盐的总和占所述主晶相的质量分数为0.001~0.015%;所述的陶瓷材料烧结后,介电常数ε介于10~14,在-40~85℃之间的介电常数温度系数τf为±10ppm/℃,品质因数Qf值≥100000GHz;
所述陶瓷材料的制备方法,包括以下步骤:
S1,将氢氧化镁、二氧化钛、碳酸钙以及二氧化硅混合,加入水,球磨,干燥,再在空气气氛中1150℃~1250℃的条件下煅烧2~4小时,得到所述主晶相;
S2,将所述主晶相及所述改性添加物混合,加入水,混合并砂磨;然后干燥,得到陶瓷材料粉末;
S3,将步骤S2得到的陶瓷材料粉末加入粘合剂、增塑剂、分散剂,球磨,获得浆料;
S4,将上述浆料干燥,得到粉料;
S5,将粉料压制成型,制成生坯器件;
S6,排胶:将生坯器件置于500℃~650℃的温度中保温24小时以排除有机物;
S7,烧结:将排胶后的坯体在空气气氛中,1260~1300℃的条件下保温3~5h;
S8,退火:在950℃~1050℃的条件下保温2~3小时,得到成型后的陶瓷材料。
2.根据权利要求1所述的陶瓷材料,其特征在于,步骤S1中,氢氧化镁、二氧化钛、碳酸钙和二氧化硅的质量比为(55~62):(75~85):(0.1~0.5):(0.1~1.5)。
3.根据权利要求1所述的陶瓷材料,其特征在于,步骤S1中,按混合后得到的固体混合物与水的质量比为1:(1.0~2.0)的比例加入水。
4.根据权利要求1所述的陶瓷材料,其特征在于,步骤S2中,按所述主晶相和所述改性添加物混合后的物料与水的质量比为1:(0.6~1.0)的比例加入水。
5.如权利要求1-4任一项所述的陶瓷材料,应用于制作毫米波器件。
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