CN110890419B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN110890419B
CN110890419B CN201910018675.1A CN201910018675A CN110890419B CN 110890419 B CN110890419 B CN 110890419B CN 201910018675 A CN201910018675 A CN 201910018675A CN 110890419 B CN110890419 B CN 110890419B
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semiconductor layer
electrode
semiconductor
layer
conductivity type
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CN110890419A (zh
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一条尚生
小野升太郎
山下浩明
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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CN1536680A (zh) * 2003-04-07 2004-10-13 株式会社东芝 绝缘栅型半导体器件
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
CN105051887A (zh) * 2013-02-28 2015-11-11 株式会社村田制作所 半导体装置
CN106796917A (zh) * 2015-03-17 2017-05-31 富士电机株式会社 半导体装置及半导体装置的制造方法

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