CN110828589A - 一种柔性日盲紫外光电探测器及其制备方法 - Google Patents
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Abstract
本发明涉及一种柔性日盲紫外光电探测器及其制备方法，所述探测器包括柔性衬底、位于柔性衬底上的β‑Ga2O3纳米线和位于所述β‑Ga2O3纳米线上的银电极。本发明制备的光电探测器具有良好的日盲紫外光响应。同时，光电探测器具有良好的稳定性和重复性，在不影响其性能的情况下实现不同程度的弯曲。本发明方法工艺简单，产品性能优异，可以实现工业化生产，在未来柔性光电探测器原材料生产中具有巨大的应用前景。
Description
技术领域
本发明涉及一种日盲紫外光电探测器领域，具体是指一种柔性日盲紫外光电探测器及其制备方法。
背景技术
由于臭氧层的吸收，在地球表面几乎不存在波长介于200-280nm的深紫外光，该波段的光称为日盲紫外光，在该区域工作的光电探测器，即所谓的太阳盲光电探测器。由于不受太阳光背景的影响，日盲紫外探测可以全天候工作，具有灵敏度高、虚警率低的特点，在导弹预警跟踪、火箭尾焰探测、森林火情警报、臭氧层检测、医疗诊断、近地保密通讯、生物化学分析等众多领域具有许多广泛的应用。
固态日盲紫外探测器要求半导体材料的禁带宽度大于4.4eV，目前以GaN、ZnO、SiC、金刚石和Ga2O3为代表的宽禁带半导体材料近年来发展迅速。尤其是Ga2O3的带隙约为4.9eV，是一种天然的日盲材料，为直接带隙的Ⅲ-VI族宽带隙半导体，且易于与Al2O3和In2O3形成连续固溶体实现其在日盲区的完全覆盖，同时具有良好的化学稳定性和热稳定性等特点是一种非常适合于制备日盲紫外光电探测器的氧化物半导体候选材料，近年来受到了科研人员的关注。
目前基于单晶、薄膜、纳米线和纳米带等多种形式的β-Ga2O3的日盲光电探测器已经在刚性衬底上制备出来并得到了广泛的研究。然而这些光电探测器往往需要较厚的材料以实现较大的光电响应，而且具有易碎、价格昂贵以及苛刻的制备工艺和工作环境等诸多缺点，限制了其应用发展。
随着现代电子技术行业的快速发展，人们对便携化、娱乐化、健康化的可穿戴式电子设备不断追求，促使其相应的柔性电子器件向着高效、低成本、大面积制造等方向发展。以光电探测器为例，易于携带、优异的移植性、大面积兼容性、更高的可扩展性以及低制备成本等优点使其在便携式和可穿戴光电子设备、可变形显示器、人造仿生组织和智能皮肤等有着潜在的应用。
然而，多数Ga2O3薄膜在柔性衬底上为低温生长的非晶性质，由于薄膜和柔性衬底之间的物理不稳定性引起的接触问题使得器件显示出不稳定性。
发明内容
本发明的目的为了解决上述技术问题，提供一种柔性日盲紫外光电探测器及其制备方法。
实现本发明上述目的，本发明提供了一种柔性日盲紫外光电探测器，所述探测器包括柔性衬底、位于柔性衬底上的β-Ga2O3纳米线和位于所述β-Ga2O3纳米线上的银电极。
其中，所述β-Ga2O3纳米线交叉沉积于所述柔性衬底上。
其中，所述β-Ga2O3纳米线通过等离子增强化学气相沉积法在所述柔性衬底原位合成。
其中，所述β-Ga2O3纳米线直径为40nm～120nm，长度为1微米～100微米。
其中，所述柔性衬底包括柔性玻璃纤维布衬底。
本发明还包括第二种技术方案，提供一种制备上述的柔性日盲紫外光电探测器的方法，包括依次在柔性衬底上沉积一层金，在金层上以镓源为前驱体合成一层β-Ga2O3纳米线层，在β-Ga2O3纳米线层上设置两滴Ag混合浆料，干燥，形成两个银电极。
其中，所述在金层上以镓源为前驱体合成一层β-Ga2O3纳米线层包括：将柔性衬底/金层样品置于水平管式炉中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；升温至500-600℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入管中；打开射频电源，设置射频功率，在金层上沉积氧化镓材料，形成β-Ga2O3纳米线层。
其中，高纯度氩气、氧气和三氯化镓的纯度均为99.999％。
其中，所述升温至500-600℃的升温速度为30℃/min；所述在金层上沉积氧化镓材料的沉积时间为5h。
其中，所述抽真空后管内压强为1Pa；高纯度氩气和氧气的混合气体的比例约10:1。
其中，通入混合气体后腔体压强为3×101Pa；射频功率在50-300W。
其中，所述金层的厚度为10nm，所述金层通过射频磁控溅射沉积在柔性衬底上。
其中，所述柔性衬底为柔性玻璃纤维布。
进一步地，柔性玻璃纤维布衬底在上沉积一层金之前经过处理，分别用丙酮、无水乙醇、去离子水对柔性玻璃纤维布进行超声清洗10min，然后在60℃的烘箱中干燥12小时。
其中，每个Ag电极面积约为0.25mm2，两个电极之间的间隙约为5mm。
本发明的有益效果在于：
1、本发明的柔性日盲紫外光电探测器，是在柔性衬底上形成的β-Ga2O3纳米线，β-Ga2O3纳米线为晶相材料，其与柔性衬底结合牢固，使得探测器显示稳定，
2、本发明的柔性日盲紫外光电探测器，所使用的柔性玻璃纤维衬底是一种新型的无机非金属材料，与其他柔性衬底相比，具有耐高温、不易燃、高强度和耐化学腐蚀等优异的性能，满足了器件在高温条件下工作的基本要求。
3、本发明的柔性日盲紫外光电探测器，β-Ga2O3纳米线是在柔性衬底上原位合成得到的，所制备的基于β-Ga2O3纳米线柔性日盲光电探测器具有优良的日盲光电性能，如在254nm的光照下其光暗比约为260，响应时间仅为0.19s，同时，器件的性能不受弯曲条件的影响，具有高工作温度和高稳定性。
4、本发明柔性日盲紫外光电探测器，提出的等离子增强化学气相沉积法，借助辉光放电等离子体提高三氯化镓气体和衬底的活性，并显著降低反应温度，提高氧化镓材料的沉积效率和质量，其工艺流程简单、成本低廉、周期短、重复性好，为氧化镓纳米基材的大规模生产创造了良好的条件。
5、本发明的柔性日盲紫外光电探测器具有良好的稳定性和重复性，在不影响其性能的情况下实现不同程度的弯曲。本发明方法工艺简单，产品性能优异，可以实现工业化生产，在未来柔性光电探测器原材料生产中具有巨大的应用前景。
附图说明
图1为本发明的柔性日盲紫外光电探测器的结构示意图。
图2为本发明方法所使用的等离子增强化学气相沉积系统的结构示意图。
图3是本发明方法制得的β-Ga2O3纳米线的X射线衍射图。
图4是本发明方法制得的β-Ga2O3纳米线的紫外可见光吸收图谱，插图是计算得到的β-Ga2O3纳米线的带隙。
图5是本发明方法制得的β-Ga2O3纳米线的扫描电镜图。
图6是本发明方法制得的β-Ga2O3纳米线的透射电镜图。
图7是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在黑暗和光照下的电流-电压特征线性和指数曲线图。
图8和图9分别是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在20V偏压下，254nm光照下光电流随入射紫外光功率变化而变化的曲线图，其中每条线对应入射光功率规律的变化。
图10是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在20V偏压下、不同的弯曲半径下测得电流-电压特征图，插图为器件在平坦和弯曲条件下的示意图。
具体实施方式
下面结合实施例和附图对本发明做进一步的解释。
实施例1
一种柔性日盲紫外光电探测器的制备方法如下：
(1)分别用丙酮、无水乙醇、去离子水对柔性玻璃纤维布进行超声清洗10min，然后在60℃的烘箱中干燥12小时；
(2)在真空下，通过射频磁控溅射技术在步骤(1)清洗后的柔性玻璃纤维布衬底上沉积约10nm厚度的Au的超薄膜；
(3)如图2所示，将步骤(2)处理后得到的样品41置于水平管式炉42中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；然后以约30℃/min的速率将炉温升至600℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入炉中，如图2中的箭头方向为气流方向；打开射频电源，设置射频44功率，在衬底上沉积氧化镓材料，反应5小时后，将炉子自然冷却至室温，在柔性玻璃纤维布/Au衬底的Au层上观察到白色的β-Ga2O3纳米线产物。其中，抽真空后腔体压强为1Pa；通入混合气体后腔体压强为3×101Pa；射频功率在50W；衬底的加热温度为600℃；高纯度氩气和氧气的混合气体的比列约为10:1，高纯度氩气、氧气和三氯化镓的纯度均为99.999％。
由图3所示的X射线衍射图可以看出得到的纳米线的成分是高纯度的单斜相β-Ga2O3。图4为β-Ga2O3纳米线的紫外可见光吸收谱图，插图为经过计算得到的带隙估计为4.98eV。可以看到β-Ga2O3纳米线的最大吸收边为249nm，对应所述日盲紫外光电探测器探测的紫外光波段。由图5和6可知，β-Ga2O3纳米线呈交叉缠绕状，其直径约为40～120nm，长度为1到100微米不等，沿(111)晶面生长。
(4)在步骤(3)合成的样品β-Ga2O3纳米线层上设置两滴Ag混合浆料，并在60℃下干燥，作为两个金属电极，并通过两根铜线连接到Ag电极构成柔性日盲紫外光电探测器(如图1)。其中每个Ag电极面积约为0.25mm2，两个电极之间的间隙约为5mm。
本发明实施例中，通过沉积金层，金层作为β-Ga2O3纳米线纳米线生长的催化剂。
如图1所示的本发明实施例方法制备出的柔性日盲紫外光电探测器，包括柔性玻璃纤维布1，位于柔性玻璃纤维布1上的β-Ga2O3纳米线2，位于β-Ga2O3纳米线2上的银电极3。本发明实施例的两个银电极3通过铜导线与电源连接。
本发明实施例中，β-Ga2O3纳米线3直径为40nm～120nm，长度为1微米～100微米，交叉沉积于柔性玻璃纤维布/金衬底1上，具有较大的比表面积，β-Ga2O3纳米线3通过等离子增强化学气相沉积法。本发明的柔性玻璃纤维布11是一种新型的无机非金属材料，具有耐高温、不易燃、高强度和耐化学腐蚀等独特性能。本发的柔性日盲紫外光电探测器为金属-半导体-金属型的柔性日盲紫外光电探测器，β-Ga2O3纳米线3的形成温度为600℃，使得β-Ga2O3纳米线3与柔性衬底结合牢固。
将本发明实施例的柔性日盲紫外光电探测器接入配有7W紫外灯作为光源的半导体表征系统(吉时利4200表)中进行光电化学性能测试。
本实施例的基于β-Ga2O3纳米线柔性日盲紫外光电探测器的性能特征：图7是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在在黑暗和光照下的电流-电压特征线性和指数曲线图，其中包括使用不同的紫外光波长(254nm和365nm)作为对比。可以看出：在365nm光线下测得的IV曲线与黑暗中的IV曲线相比没有显示出明显的增加，而器件在254nm光照射时，电流呈现急剧跳跃，光照下其光暗比约为260，响应时间仅为0.19s，表现出强烈的光响应特性。图8和图9是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在20V偏压下，254nm光照下光电流随入射紫外光功率变化而变化的曲线图。可以看出：基于β-Ga2O3纳米线柔性日盲紫外光电探测器的光响应度随入射紫外光功率的增大而增大。当工作电压为20V时，在光功率密度为1.2mW/cm2的254nm紫外光光照下，基于β-Ga2O3纳米线柔性日盲紫外光电探测器的光响应度为0.54A/W。图10是本发明方法制得的基于β-Ga2O3纳米线柔性日盲紫外光电探测器在平坦和不同弯曲半径下测得电流-电压特征图，采用三个不同弯折度分别为r1、r2、r3，可以看出不同弯曲状态下的器件都表现出与扁平状态几乎相同的性能，说明本发发明实施例的探测器的性能不受弯曲条件的影响，具有高稳定性。这些曲线中可忽略不计的差异应当是由于当器件弯曲时探针和电极之间的接触条件的不同引起的。
实施例2
一种柔性日盲紫外光电探测器的制备方法如下：
(1)分别用丙酮、无水乙醇、去离子水对柔性玻璃纤维布进行超声清洗10min，然后在60℃的烘箱中干燥12小时；
(2)在真空下，通过射频磁控溅射技术在步骤(1)清洗后的柔性玻璃纤维布衬底上沉积约10nm厚度的Au的超薄膜；
(3)将步骤(2)处理后得到的样品置于水平管式炉中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；然后以约30℃/min的速率将炉温升至500℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入炉中；打开射频电源，设置射频功率，在衬底上沉积氧化镓材料，反应5小时后，将炉子自然冷却至室温，在衬底上观察到白色的β-Ga2O3纳米线产物。其中，抽真空后腔体压强为1Pa；通入混合气体后腔体压强为3×101Pa；射频功率在200W；衬底的加热温度为500℃。
(4)在步骤(3)合成的样品上设置两滴Ag混合浆料，并在60℃下干燥，作为两个金属电极，并通过两根铜线连接到Ag电极构成柔性日盲紫外光电探测器。
具体地，步骤(3)所述的高纯度氩气和氧气的混合气体的比列约为10:1，高纯度氩气、氧气和三氯化镓的纯度均为99.999％。
进一步地，步骤(4)所述的每个Ag电极面积约为0.25mm2，两个电极之间的间隙约为5mm。
所得产物的化学成分、晶体结构、形貌以及光电性能均与实施例1类似。
如图1所示的本发明实施例方法制备出的柔性日盲紫外光电探测器，包括柔性玻璃纤维布1，位于柔性玻璃纤维布1上的β-Ga2O3纳米线2，位于β-Ga2O3纳米线2上的银电极3。本发明实施例的两个银电极3通过铜导线与电源连接。
本发明实施例中，β-Ga2O3纳米线3直径为40nm～120nm，长度为1微米～100微米，交叉沉积于柔性玻璃纤维布/金衬底1上，具有较大的比表面积，β-Ga2O3纳米线3通过等离子增强化学气相沉积法。本发明的柔性玻璃纤维布11是一种新型的无机非金属材料，具有耐高温、不易燃、高强度和耐化学腐蚀等独特性能。本发的柔性日盲紫外光电探测器为金属-半导体-金属型的柔性日盲紫外光电探测器，β-Ga2O3纳米线3的形成温度为500℃，使得β-Ga2O3纳米线3与柔性衬底结合牢固。
实施例3
一种柔性日盲紫外光电探测器的制备方法如下：
(1)分别用丙酮、无水乙醇、去离子水对柔性玻璃纤维布进行超声清洗10min，然后在60℃的烘箱中干燥12小时；
(2)在真空下，通过射频磁控溅射技术在步骤(1)清洗后的柔性玻璃纤维布衬底上沉积约10nm厚度的Au的超薄膜；
(3)将步骤(2)处理后得到的样品置于水平管式炉中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；然后以约30℃/min的速率将炉温升至550℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入炉中；打开射频电源，设置射频功率，在衬底上沉积氧化镓材料，反应5小时后，将炉子自然冷却至室温，在衬底上观察到白色的β-Ga2O3纳米线产物。其中，抽真空后腔体压强为1Pa；通入混合气体后腔体压强为3×101Pa；射频功率在300W；衬底的加热温度为550℃。
(4)在步骤(3)合成的样品上设置两滴Ag混合浆料，并在60℃下干燥，作为两个金属电极，并通过两根铜线连接到Ag电极构成柔性日盲紫外光电探测器。
具体地，步骤(3)所述的高纯度氩气和氧气的混合气体的比列约为10:1，高纯度氩气、氧气和三氯化镓的纯度均为99.999％。
进一步地，步骤(4)所述的每个Ag电极面积约为0.25mm2，两个电极之间的间隙约为5mm。
所得产物的化学成分、晶体结构、形貌以及光电性能均与实施例1类似。
如图1所示的本发明实施例方法制备出的柔性日盲紫外光电探测器，包括柔性玻璃纤维布1，位于柔性玻璃纤维布11上的β-Ga2O3纳米线2，位于β-Ga2O3纳米线2上的银电极3。本发明实施例的两个银电极3通过铜导线与电源连接。
本发明实施例中，β-Ga2O3纳米线3直径为40nm～120nm，长度为1微米～100微米，交叉沉积于柔性玻璃纤维布/金衬底1上，具有较大的比表面积，β-Ga2O3纳米线3通过等离子增强化学气相沉积法。本发明的柔性玻璃纤维布11是一种新型的无机非金属材料，具有耐高温、不易燃、高强度和耐化学腐蚀等独特性能。本发的柔性日盲紫外光电探测器为金属-半导体-金属型的柔性日盲紫外光电探测器，β-Ga2O3纳米线3的形成温度为550℃，使得β-Ga2O3纳米线3与柔性衬底结合牢固。
实施例4
一种柔性日盲紫外光电探测器的制备方法如下：
(1)分别用丙酮、无水乙醇、去离子水对柔性玻璃纤维布进行超声清洗10min，然后在60℃的烘箱中干燥12小时；
(2)在真空下，通过射频磁控溅射技术在步骤(1)清洗后的衬底上沉积约10nm厚度的Au的超薄膜；
(3)将步骤(2)处理后得到的样品置于水平管式炉中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；然后以约30℃/min的速率将炉温升至600℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入炉中；打开射频电源，设置射频功率，在衬底上沉积氧化镓材料，反应5小时后，将炉子自然冷却至室温(如图2所示)，在衬底上观察到白色的β-Ga2O3纳米线产物。其中，抽真空后腔体压强为1Pa；通入混合气体后腔体压强为3×101Pa；射频功率在100W；衬底的加热温度为600℃。
(4)在步骤(3)合成的样品上设置两滴Ag混合浆料，并在60℃下干燥，作为两个金属电极，并通过两根铜线连接到Ag电极构成柔性日盲紫外光电探测器。
具体地，步骤(3)所述的高纯度氩气和氧气的混合气体的比列约为10:1，高纯度氩气、氧气和三氯化镓的纯度均为99.999％。
进一步地，步骤(4)所述的每个Ag电极面积约为0.25mm2，两个电极之间的间隙约为5mm。
所得产物的化学成分、晶体结构、形貌以及光电性能均与实施例1类似。
如图1所示的本发明实施例方法制备出的柔性日盲紫外光电探测器，包括柔性玻璃纤维布1，位于柔性玻璃纤维布1上的β-Ga2O3纳米线2，位于β-Ga2O3纳米线2上的银电极3。本发明实施例的两个银电极3通过铜导线与电源连接。
本发明实施例中，β-Ga2O3纳米线3直径为40nm～120nm，长度为1微米～100微米，交叉沉积于柔性玻璃纤维布/金衬底1上，具有较大的比表面积，β-Ga2O3纳米线3通过等离子增强化学气相沉积法。本发明的柔性玻璃纤维布11是一种新型的无机非金属材料，具有耐高温、不易燃、高强度和耐化学腐蚀等独特性能。本发的柔性日盲紫外光电探测器为金属-半导体-金属型的柔性日盲紫外光电探测器，β-Ga2O3纳米线3的形成温度为600℃，使得β-Ga2O3纳米线3与柔性衬底结合牢固。
以上所公开或要求的实施例在不超过现有公开的实验手段的范围内可以制出或实施。本发明优选的实施方式所描述的所有的产物和/或方法，明白地指那些不违反本发明的概念、范围和精神的可以用于该产物和/或实验方法以及接下来的步骤。对所述的工艺中技术手段的所有的改动和改进，均属于本发明权利要求定义的概念、范围和精神。
Claims (10)
1.一种柔性日盲紫外光电探测器，其特征在于，所述探测器包括柔性衬底、位于柔性衬底上的β-Ga2O3纳米线和位于所述β-Ga2O3纳米线上的银电极。
2.根据权利要求1所述的柔性日盲紫外光电探测器，其特征在于，所述β-Ga2O3纳米线交叉沉积于所述柔性衬底上。
3.根据权利要求2所述的柔性日盲紫外光电探测器，其特征在于，所述β-Ga2O3纳米线通过等离子增强化学气相沉积法在所述柔性衬底原位合成。
4.根据权利要求1-3任一项所述的柔性日盲紫外光电探测器，其特征在于，所述β-Ga2O3纳米线直径为40nm～120nm，长度为1微米～100微米。
5.根据权利要求1所述的柔性日盲紫外光电探测器，其特征在于，所述柔性衬底包括柔性玻璃纤维布。
6.一种制备权利要求1-5任一项所述的柔性日盲紫外光电探测器的方法，其特征在于，包括依次在柔性衬底上沉积一层金，在金层上以镓源为前驱体合成一层β-Ga2O3纳米线层，在β-Ga2O3纳米线层上设置两滴Ag混合浆料，干燥，形成两个银电极。
7.根据权利要求6所述的方法，其特征在于，所述在金层上以镓源为前驱体合成一层β-Ga2O3纳米线层包括：
将柔性衬底/金层样品置于水平管式炉中，并通过机械旋转泵将管抽空，用500sccm的氩气吹扫；升温至500-600℃，同时将高纯度氩气和氧气的混合气体以及三氯化镓气体通入管中；打开射频电源，设置射频功率，在金层上沉积氧化镓材料，形成β-Ga2O3纳米线层。
8.根据权利要求7所述的方法，其特征在于，所述升温至500-600℃的升温速度为30℃/min；所述在金层上沉积氧化镓材料的沉积时间为5h。
9.根据权利要求7所述的方法，其特征在于，所述抽真空后管内压强为1Pa；高纯度氩气和氧气的混合气体的比例为10:1；通入混合气体后腔体压强为3×101Pa；射频功率在50-300W。
10.根据权利要求7所述的方法，其特征在于，所述金层的厚度为10nm，所述金层通过射频磁控溅射沉积在柔性衬底上；所述柔性衬底为柔性玻璃纤维布。
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